M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code, M29F100T: 00D0h – Device Code, M29F100B: 00D1h 44 1 TSOP48 (N) 12 x 20 mm SO44 (M) Figure 1. Logic Diagram VCC 16 15 A0-A15 DQ0-DQ14 W DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles. July 1998 E DQ15A–1 M29F100T M29F100B G BYTE RB RP VSS AI01974 1/30 M29F100T, M29F100B Figure 2A. TSOP Pin Connections A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC NC A7 A6 A5 A4 A3 A2 A1 1 12 13 48 M29F100T M29F100B (Normal) 24 37 36 25 Figure 2B. TSOP Reverse Pin Connections NC BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 NC BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 1 12 13 48 M29F100T M29F100B (Reverse) 24 AI01975 Warning: NC = Not Connected. Figure 2C. SO Pin Connections Table 1. Signal Names 44 1 2 43 42 3 41 4 40 5 6 39 7 38 8 37 9 36 10 35 11 M29F100T 34 12 M29F100B 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 AI01977 Warning: NC = Not Connected. 2/30 25 AI01976 Warning: NC = Not Connected. NC RB NC A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 37 36 A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC NC A7 A6 A5 A4 A3 A2 A1 RP W A8 A9 A10 A11 A12 A13 A14 A15 NC BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC A0-A15 Address Inputs DQ0-DQ7 Data Input/Outputs, Command Inputs DQ8-DQ14 Data Input/Outputs DQ15A–1 Data Input/Output or Address Input E Chip Enable G Output Enable W Write Enable RP Reset / Block Temporary Unprotect RB Ready/Busy Output BYTE Byte/Word Organisation VCC Supply Voltage VSS Ground M29F100T, M29F100B Table 2. Absolute Maximum Ratings (1) Symbol Parameter Ambient Operating Temperature TA (3) Value Unit –40 to 125 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C Input or Output Voltages –0.6 to 7 V Supply Voltage –0.6 to 7 V A9, E, G, RP Voltage –0.6 to 13.5 V VIO (2) VCC V(A9, E, G, RP) (2) Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. 3. Depends on range. DESCRIPTION (Cont’d) Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commandsto a Command Interfaceusing standard microprocessor write timings. The device is offered in TSOP48 (12 x 20mm) and SO44 packages. Both normal and reverse pinouts are available for the TSOP48 package. Organisation The M29F100 is organised as 128Kb x8 or 64Kb x16 bits selectable by the BYTE signal. When BYTE is Low the Byte-wide x8 organisation is selected and the address lines are DQ15A–1 and A0-A15. The Data Input/Output signal DQ15A–1 acts as address line A–1 which selects the lower or upper Byte of the memory word for output on DQ0-DQ7, DQ8-DQ14 remain at High impedance. When BYTE is High the memory uses the address inputs A0-A15 and the Data Input/Outputs DQ0DQ15. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs. AReset/Block TemporaryUnprotection RP tri-level input provides a hardware reset when pulled Low, and when held High (at VID) temporarily unprotects blocks previously protected allowing them to be programed and erased. Erase and Program operations are controlled by an internal Program/Erase Controller (P/E.C.). Status Register data output on DQ7 provides a Data Polling signal, and DQ6 and DQ2 provide Toggle signals to indicate the state of the P/E.C operations. A Ready/Busy RB output indicates the completion of the internal algorithms. Memory Blocks The devices feature asymmetrically blocked architecture providing system memory integration. Both M29F100T and M29F100B devices have an array of 5 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes or 16 KWords and one Main Blocks of 64 KBytes or 32 KWords. The M29F100T has the Boot Block at the top of the memory address space and the M29F100B locates the Boot Block starting at the bottom. The memory maps are showed in Figure 3. Each block can be erased separately, any combination of blocks can be specified for multi-block erase or the entire chip may be erased. The Erase operations are managed automatically by the P/E.C. The block erase operation can be suspended in order to read from or program to any block not being ersased, and then resumed. Block protection provides additional data security. Each block can be separately protected or unprotected against Program or Erase on programming equipment. All previously protected blocks can be temporarily unprotected in the application. Bus Operations The following operations can be performed using the appropriatebus cycles: Read (Array, Electronic Signature, Block Protection Status), Write command, Output Disable, Standby, Reset, Block Prot ec t io n , Unp ro t e ct io n, P ro t e cti on Verif y, Unprotection Verify and Block Temporary Unprotection. See Tables 4 and 5. 3/30 M29F100T, M29F100B Figure 3. Memory Map and Block Address Table (x8) M29F100B M29F100T 1FFFFh 1FFFFh 64K MAIN BLOCK 16K BOOT BLOCK 1C000h 1BFFFh 10000h 0FFFFh 32K MAIN BLOCK 8K PARAMETER BLOCK 1A000h 19FFFh 08000h 07FFFh 8K PARAMETER BLOCK 06000h 05FFFh 18000h 17FFFh 8K PARAMETER BLOCK 8K PARAMETER BLOCK 32K MAIN BLOCK 10000h 0FFFFh 04000h 03FFFh 16K BOOT BLOCK 64K MAIN BLOCK 00000h 00000h AI01978 Table 3A. M29F100T Block Address Table Address Range (x8) Address Range (x16) A15 A14 A13 A12 00000h-0FFFFh 0000h-7FFFh 0 X X X 10000h-17FFFh 8000h-BFFFh 1 0 X X 18000h-19FFFh C000h-CFFFh 1 1 0 0 1A000h-1BFFFh D000h-DFFFh 1 1 0 1 1C000h-1FFFFh E000h-FFFFh 1 1 1 X Table 3B. M29F100B Block Address Table Address Range (x8) Address Range (x16) A15 A14 A13 A12 00000h-03FFFh 0000h-1FFFh 0 0 0 X 04000h-05FFFh 2000h-2FFFh 0 0 1 0 06000h-07FFFh 3000h-3FFFh 0 0 1 1 08000h-0FFFFh 4000h-7FFFh 0 1 X X 10000h-1FFFFh 8000h-FFFFh 1 X X X 4/30 M29F100T, M29F100B Command Interface Instructions, made up of commands written in cycles, can be given to the Program/Erase Controller through a Command Interface (C.I.). For added data protection, program or erase execution starts after 4 or 6 cycles. The first, second,fourth and fifth cycles are used to input Coded cycles to the C.I. This Coded sequence is the same for all Program/Erase Controller instructions. The ’Command’ itself and its confirmation, when applicable, are given on the third, fourth or sixth cycles. Any incorrect command or any improper command sequence will reset the device to Read Array mode. Instructions Seven instructions are defined to perform Read Array, Auto Select (to read the ElectronicSignature or Block ProtectionStatus), Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. The internal P/E.C. automatically handles all timing and verification of the Program and Erase operations.The Status Register Data Polling, Toggle, Error bits and the RB output may be read at any time, during programming or erase, to monitor the progress of the operation. Instructions are composed of up to six cycles. The first two cycles input a Coded sequence to the Command Interfacewhich iscommon to all instructions (see Table 8). The third cycle inputs the instruction set-up command. Subsequent cycles output the addressed data, Electronic Signature or Block Protection Status for Read operations. In order to give additional data protection,the instructions for Program and Block or Chip Erase require further command inputs. For a Programinstruction, the fourth command cycle inputs the address and data to be programmed. For an Erase instruction (Block or Chip), the fourth and fifth cycles input a further Coded sequence before the Erase confirm command on the sixth cycle. Erasure of a memory block may be suspended,in orderto read data from another block or to program data in another block, and then resumed. When power is first applied or if VCC falls below VLKO, the command interface is reset to Read Array. SIGNAL DESCRIPTIONS See Figure 1 and Table 1. Address Inputs (A0-A15). The address inputs for the memory array are latched during a write operation on the falling edge of Chip Enable E or Write Enable W. In Word-wide organisation the address lines are A0-A15, in Byte-wide organisation DQ15A–1 acts as an additional LSB address line. When A9 is raised to VID, either a Read Electronic Signature Manufacturer or Device Code, Block Protection Status or a Write Block Protection or Block Unprotection is enabled depending on the combination of levels on A0, A1, A6, A12 and A15. Data Input/Outputs (DQ0-DQ7). T h e s e I nputs/Outputsare used in the Byte-wide and Wordwide organisations. The input is data to be programmed in the memory array or a command to be written to the C.I. Both are latched on the rising edge of Chip Enable E or Write Enable W. The output is data from the Memory Array, the Electronic Signature Manufacturer or Device codes, the Block Protection Status or the Status register Data Polling bit DQ7, the Toggle Bits DQ6 and DQ2, the Error bit DQ5 or the Erase Timer bit DQ3. Outputs are valid when Chip Enable E and Output Enable G are active. The output is high impedance when the chip is deselected or the outputsare disabled and when RP is at a Low level. Data Input/Outputs (DQ8-DQ14 and DQ15A–1). These Inputs/Outputs are additionally used in the Word-wide organisation.When BYTEis High DQ8DQ14 and DQ15A–1 act as the MSB of the Data Input or Output, functioning as described for DQ0DQ7 above, and DQ8-DQ15 are ’don’t care’ for command inputs or status outputs. When BYTE is Low, DQ8-DQ14 are high impedance, DQ15A–1 is the Address A–1 input. Chip Enable (E). The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. E High deselectsthe memory and reduces the power consumptionto the standby level. E can also be used to control writing to the command register and to the memory array, while W remains at a low level. The Chip Enable must be forced to VID during the Block Unprotection operation. Output Enable (G). The Output Enable gates the outputs through the data buffers during a read operation. When G is High the outputs are High impedance. G must be forced to VID level during Block Protection and Unprotection operations. Write Enable (W). This input controls writing to the Command Registerand Addressand Datalatches. Byte/Word Organization Select (BYTE). The BYTE input selects the output configuration for the device: Byte-wide (x8) mode or Word-wide (x16) mode. When BYTE is Low, the Byte-wide mode is selected and the data is read and programmed on DQ0-DQ7. In this mode, DQ8-DQ14 are at high impedance and DQ15A–1 is the LSB address. When BYTE is High, the Word-wide mode is selected and the data is read and programmed on DQ0-DQ15. 5/30 M29F100T, M29F100B Ready/Busy Output (RB). Ready/Busy is an open-drainoutput and gives the internalstate of the P/E.C. of the device. When RB is Low, the device is Busy with a Program or Erase operation and it will not accept any additional program or erase instructions except the Erase Suspend instruction. WhenRB is High, the device is ready for any Read, Program or Erase operation. The RB will also be High when the memory is put in Erase Suspend or Standby modes. Reset/Block Temporary Unprotect Input (RP). The RP Input provides hardware reset and protected block(s) temporary unprotection functions. Reset of the memory is acheived by pulling RP to VIL for at least 500ns. When the reset pulse is given, if the memory is in Read or Standby modes, it will be available for new operations in 50ns after the rising edge of RP. If the memory is in Erase, Erase Suspend or Program modes the reset will take 10µs during which the RB signal will be held at VIL. The end of the memory reset will beindicated by the rising edge of RB. A hardware reset during an Eraseor Programoperation will corrupt the data being programmed or the sector(s) being erased. Temporary block unprotection is made by holding RP at VID. In this condition previously protected blocks can be programmed or erased. The transition of RP from VIH to VID must slower than 500ns. When RP is returned from VID to VIH all blocks temporarily unprotected will be again protected. VCC Supply Voltage. The power supply for all operations (Read, Program and Erase). VSS Ground. VSS is the reference for all voltage measurements. DEVICE OPERATIONS See Tables 4, 5 and 6. Read. Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register or the Block Protection Status. Both Chip Enable E and Output Enable G must be low in order to read the output of the memory. Write. Write operationsare used to give Instruction Commands to the memory or to latch input data to be programmed. A write operationis initiated when Chip Enable E is Low and Write Enable W is Low with Output Enable G High. Addresses are latched on the falling edge of W or E whicheveroccurs last. Commands and Input Data are latchedon the rising edge of W or E whichever occurs first. 6/30 Output Disable. The data outputs are high impedance when the Output Enable G is High with Write Enable W High. Standby. The memory is in standby when Chip Enable E is High and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable G or Write Enable W inputs. Automatic Standby. After 150ns of bus inactivity and when CMOS levels are driving the addresses, the chip automatically enters a pseudo-standby mode where consumptionis reduced to the CMOS standby value, while outputs still drive the bus. Electronic Signature. Two codes identifying the manufacturer and the device can be read from the memory. The manufacturer’s code for STMicroelectronics is 20h, the device code is D0h for the M29F100T (Top Boot) and D1h for the M29F100B (Bottom Boot). These codes allow programming equipment or applications to automatically match their interface to the characteristics of the M29F100. The Electronic Signature is output by a Read operation when the voltage applied to A9 is at VID and address input A1 is Low. The manufacturer code is output when the Address input A0 is Low and the device code when this input is High. Other Address inputs are ignored. The codes are output on DQ0-DQ7. The Electronic Signature can also be read, without raising A9 to VID, by giving the memory the Instruction AS. If the Byte-wide configuration is selected the codes are output on DQ0-DQ7 with DQ8-DQ14 at High impedance; if the Word-wide configuration is selected the codes are output on DQ0-DQ7 with DQ8-DQ15 at 00h. Block Protection. Each block can be separately protected against Program or Erase on programming equipment. Block protection provides additional data security, as it disables all program or erase operations.This mode is activatedwhen both A9 and G are raised to VID and an address in the block is applied on A12-A15. The Block Protection algorithm is shown in Figure 14. Block protection is initiated on the edge of W falling to VIL. Then after a delay of 100µs, the edge of W rising to VIH ends the protection operations. Block protection verify is achieved by bringing G, E, A0 and A6 to VIL and A1 to VIH, while W is at VIH and A9 at VID. Underthese conditions, reading the data output will yield 01h if the block defined by the inputs on A12-A15 is protected. Any attempt to program or erase a protected block will be ignored by the device. M29F100T, M29F100B Table 4. User Bus Operations (1) E G W RP BYTE A0 A1 A6 A9 A12 A15 DQ15 A–1 DQ8DQ14 DQ0-DQ7 Read Word VIL VIL VIH VIH VIH A0 A1 A6 A9 A12 A15 Data Output Data Output Data Output Read Byte VIL VIL VIH VIH VIL A0 A1 A6 A9 A12 A15 Address Input Hi-Z Data Output Write Word VIL VIH VIL VIH VIH A0 A1 A6 A9 A12 A15 Write Byte VIL VIH VIL VIH VIL A0 A1 A6 A9 A12 A15 Address Input Hi-Z Data Input Output Disable VIL VIH VIH VIH X X X X X X X Hi-Z Hi-Z Hi-Z Standby VIH X X VIH X X X X X X X Hi-Z Hi-Z Hi-Z X X X VIL X X X X X X X Hi-Z Hi-Z Hi-Z Block Protection(2,4) VIL VID VIL Pulse VIH X X X X VID X X X X X Blocks Unprotection(4) VID VID VIL Pulse VIH X X X X VID VIH VIH X X X Block Protection (2,4) Verify VIL VIL VIH VIH X VIL VIH VIL VID A12 A15 X X Block Protect (3) Status Block Unprotection Verify(2,4) VIL VIL VIH VIH X VIL VIH VIH VID A12 A15 X X Block Protect Status (3) Block Temporary Unprotection X X X VID X X X X X X X X X X Operation Reset Notes: 1. 2. 3. 4. Data Input Data Input Data Input X = VIL or VIH Block Address must be given on A12-A15 bits. See Table 6. Operation performed on programming equipment. Table 5. Read Electronic Signature (following AS instruction or with A9 = VID) Org. Wordwide Code E G W BYTE A0 A1 Other Addresses DQ15 A–1 DQ8 DQ14 DQ0 DQ7 VIL VIL VIH VIH VIL VIL Don’t Care 0 00h 20h M29F100T VIL VIL VIH VIH VIH VIL Don’t Care 0 00h D0h M29F100B VIL VIL VIH VIH VIH VIL Don’t Care 0 00h D1h VIL VIL VIH VIL VIL VIL Don’t Care Don’t Care Hi-Z 20h M29F100T VIL VIL VIH VIL VIH VIL Don’t Care Don’t Care Hi-Z D0h M29F100B VIL VIL VIH VIL VIH VIL Don’t Care Don’t Care Hi-Z D1h Device Manufact. Code Device Code Manufact. Code Bytewide Device Code Table 6. Read Block Protection with AS Instruction E G W A0 A1 A12 - A15 Other Addresses DQ0 - DQ7 Protected Block VIL VIL VIH VIL VIH Block Address Don’t Care 01h Unprotected Block VIL VIL VIH VIL VIH Block Address Don’t Care 00h Code 7/30 M29F100T, M29F100B Block Temporary Unprotection. Any previously protected block can be temporarily unprotected in order to change stored data. The temporaryunprotection mode is activated by bringing RP to VID. During the temporary unprotection mode the previously protected blocks are unprotected. A block can be selected and data can be modified by executingthe Erase or Program instruction with the RP signal held at VID. When RP is returned to VIH, all the previously protected blocks are again protected. Block Unprotection. All protected blocks can be unprotected on programming equipment to allow updating of bit contents. All blocks must first be protected before the unprotection operation. Block unprotection is activated when A9, G and E are at VID and A12, A15 at VIH. The Block Unprotection algorithm is shown in Figure 15. Unprotection is initiated by theedge of W falling to VIL . Aftera delay of 10ms, the unprotection operation will end. Unprotectionverify is achieved by bringing G and E to VIL while A0 is at VIL, A6 and A1 are at VIH and A9 remains at VID. In these conditions, reading the output data will yield 00h if the block defined by the inputs A12-A15 has been succesfully unprotected. Each block must be separatelyverified by giving its address in order to ensure that it has been unprotected. INSTRUCTIONS AND COMMANDS The Command Interface latches commands written to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Protection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences. The instructions require from 1 to 6 cycles, the first or first three of which are always write operations used to initiate the instruction. They are followed by either further write cycles to confirm the first command or execute the command immediately. Command sequencing must be followed exactly. Any invalid combination of commands will reset the device to Read Array. The increased number of cycles has been chosen to assure maximum data security. Instructions are initialised by two initial Coded cycles which unlock the Command Interface.In addition, for Erase, instruction confirmation is again preceded by the two Coded cycles. Status Register Bits P/E.C. status is indicated during execution by Data Polling on DQ7, detection of Toggle on DQ6 and DQ2, or Error on DQ5 and Erase Timer DQ3 bits. 8/30 Any read attempt during Program or Erase command executionwill automaticallyoutput these five Status Register bits. The P/E.C. automatically sets bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits (DQ0, DQ1 and DQ4) are reserved for future use and should be masked. See Tables 9 and 10. Data Polling Bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7. During Erase operation, it outputs a ’0’. After completion of the operation, DQ7 will output the bit last programmed or a ’1’ after erasing. Data Polling is valid and only effective during P/E.C. operation, that is after the fourth W pulse for programming or after the sixth W pulse for erase. It must be performed at the address being programmed or at an address within the block being erased. If all the blocks selected for erasure are protected, DQ7 will be set to ’0’ for about 100µs, and then return to the previous addressed memory data value. See Figure 11 for the Data Polling flowchart and Figure 10 for the Data Polling waveforms. DQ7 will also flag the Erase Suspend mode by switching from ’0’ to ’1’ at the start of the Erase Suspend. In order to monitor DQ7 in the Erase Suspend mode an address within a block being erased must be provided. For a Read Operation in Erase Suspend mode, DQ7 will output ’1’ if the read is attempted on a blockbeing erasedand the data valueon other blocks. During Program operation in Erase Suspend Mode, DQ7 will have the same behaviour as in the normal program execution outside of the suspend mode. Table 7. Commands Hex Code Command 00h Invalid/Reserved 10h Chip Erase Confirm 20h Reserved 30h Block Erase Resume/Confirm 80h Set-up Erase 90h Read Electronic Signature/ Block Protection Status A0h Program B0h Erase Suspend F0h Read Array/Reset M29F100T, M29F100B Table 8. Instructions (1) Mne. Instr. Cyc. 1+ RD (2,4) 1st Cyc. Addr. (3,7) X Data Read/Reset Memory Array 3+ Auto Select 3+ Addr. (3,7) Addr. (3,7) Addr. (3,7) Program Block Erase 4 6 Chip Erase 6 Addr. (3,7) Addr. (3,7) Data ES (10) ER Erase Suspend Erase Resume 1 Addr. (3,7) Data 1 Addr. Data 6th Cyc. 7th Cyc. Read Memory Array until a new write cycle is initiated. 5555h AAAAh Word 5555h 2AAAh 5555h AAh 55h F0h Byte AAAAh 5555h AAAAh Word 5555h 2AAAh 5555h AAh 55h 90h Byte AAAAh 5555h AAAAh Word 5555h 2AAAh 5555h AAh 55h A0h Program Data Byte AAAAh 5555h AAAAh AAAAh 5555h Word 5555h 2AAAh 5555h 5555h 2AAAh AAh 55h 80h AAh 55h 30h Byte AAAAh 5555h AAAAh AAAAh 5555h AAAAh Word 5555h 2AAAh 5555h 5555h 2AAAh 5555h AAh 55h 80h AAh 55h 10h Data CE 5th Cyc. AAAAh Data BE 4th Cyc. Byte Data PG 3rd Cyc. F0h Data AS (4) 2nd Cyc. X B0h (3,7) X 30h Read Memory Array until a new write cycle is initiated. Read Electronic Signature or Block Protection Status until a new write cycle is initiated. See Note 5 and 6. Program Address Read Data Polling or Toggle Bit until Program completes. Block Additional (8) Address Block 30h Note 9 Read until Toggle stops, then read all the data needed from any Block(s) not being erased then Resume Erase. Read Data Polling or Toggle Bits until Erase completes or Erase is suspended another time Notes: 1. Commands not interpreted in this table will default to read array mode. 2. A wait of tPLYH is necessary after a Read/Reset command if the memory was in an Erase or Program mode before starting any new operation (see Table 14 and Figure 9). 3. X = Don’t Care. 4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the command cycles. 5. Signature Address bits A0, A1 at VIL will output Manufacturer code (20h). Address bits A0 at VIH and A1 at VIL will output Device code. 6. Block Protection Address: A0 at VIL, A1 at VIH and A12-A15 within the Block will output the Block Protection status. 7. For Coded cycles address inputs A15 is don’t care. 8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout status can be verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended. 9. Read Data Polling, Toggle bits or RB until Erase completes. 10.During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased. 9/30 M29F100T, M29F100B Table 9. Status Register Bits DQ 7 Name Data Polling Logic Level Toggle Bit Erase Complete or erase block in Erase Suspend ’0’ Erase On-going DQ Program Complete or data of non erase block during Erase Suspend DQ Program On-going DQ ’-1-1-1-1-1-1-1-’ 5 4 3 Error Bit Erase or Program On-going Program Complete Erase Complete or Erase Suspend on currently addressed block Indicates the P/E.C. status, check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success. Successive reads output complementary data on DQ6 while Programming or Erase operations are on-going. DQ6 remains at constant level when P/E.C. operations are completed or Erase Suspend is acknowledged. ’1’ Program or Erase Error ’0’ Program or Erase On-going ’1’ Erase Timeout Period Expired P/E.C. Erase operation has started. Only possible command entry is Erase Suspend (ES). ’0’ Erase Timeout Period On-going An additional block to be erased in parallel can be entered to the P/E.C. This bit is set to ’1’ in the case of Programming or Erase failure. Reserved Erase Time Bit ’-1-0-1-0-1-0-1-’ 2 Note ’1’ ’-1-0-1-0-1-0-1-’ 6 Definition Toggle Bit 1 DQ 1 Reserved 0 Reserved Chip Erase, Erase or Erase Suspend on the currently addressed block. Erase Error due to the currently addressed block (when DQ5 = ’1’). Indicates the erase status and allows to identify the erased block Program on-going, Erase on-going on another block or Erase Complete Erase Suspend read on non Erase Suspend block Notes: Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations. Toggle Bit (DQ6). When Programming or Erasing operations are in progress, successive attempts to read DQ6 will output complementarydata. DQ6 will toggle following toggling of either G, or E when G is low. The operation is completed when two successive reads yield the same output data. The next read will output the bit last programmed or a ’1’ after erasing. The toggle bit DQ6 is valid only during P/E.C. operations, that is after the fourth W pulse for programming or after the sixth W pulse for 10/30 Erase. If the blocks selected for erasure are protected, DQ6 will toggle for about 100µs and then return back to Read. DQ6 will be set to ’1’ if a Read operationis attemptedon an Erase Suspendblock. When erase is suspended DQ6 will toggle during programming operations in a block different to the block in Erase Suspend. Either E or G toggling will cause DQ6 to toggle. See Figure 12 for Toggle Bit flowchart and Figure 13 for Toggle Bit waveforms. M29F100T, M29F100B Table 10. Polling and Toggle Bits Mode DQ7 DQ6 DQ2 DQ7 Toggle 1 Erase 0 Toggle Note 1 Erase Suspend Read (in Erase Suspend block) 1 1 Toggle Erase Suspend Read (outside Erase Suspend block) DQ7 DQ6 DQ2 Erase Suspend Program DQ7 Toggle N/A Program Note: 1. Toggle if the address is within a block being erased. ’1’ if the address is within a block not being erased. Toggle Bit (DQ2). This toggle bit, together with DQ6, can be used to determine the device status during the Erase operations. It can also be used to identify the block being erased. During Erase or Erase Suspend a read from a block being erased will cause DQ2 to toggle. A read from a block not being erased will set DQ2 to ’1’ during erase and to DQ2 during Erase Suspend. During Chip Erase a read operation will cause DQ2 to toggle as all blocks are being erased. DQ2 will be set to ’1’ during program operation and when erase is complete. After erase completion and if the error bit DQ5 is set to ’1’, DQ2 will toggle if the faulty block is addressed. Error Bit (DQ5). This bit is set to ’1’ by the P/E.C. when there is a failure of programming, block erase, or chip erase that results in invalid data in the memory block. In caseof an error in block erase or program, the block in which the error occured or to which the programmed data belongs, must be discarded. The DQ5 failure condition will also appear if a user tries to program a ’1’ to a locationthat is previously programmed to ’0’. Other Blocks may stillbe used.The error bit resets after a Read/Reset (RD) instruction. In case of success of Program or Erase, the error bit will be set to ’0’ . Erase Timer Bit (DQ3). This bit is set to ’0’ by the P/E.C. when the last block Erase command has been entered to the Command Interface and it is awaiting the Erase start. When the erase timeout period is finished, after 80µs to 120µs, DQ3 returns to ’1’. Coded Cycles The two Coded cycles unlock the Command Interface. They are followed by an input command or a confirmation command. The Coded cycles consist of writing the data AAh at address AAAAh in the Byte-wide configuration and at address 5555h in the Word-wide configuration during the first cycle. During the second cycle the Coded cycles consist of writing the data 55h at address 5555h in the Byte-wide configuration and at address 2AAAh in the Word-wide configuration.In the Byte-wideconfiguration the address lines A–1 to A14 are valid, in Word-wide A0 to A14 are valid, other address lines are ’don’t care’. The Coded cycles happen on first and second cycles of the command write or on the fourth and fifth cycles. Instructions See Table 8. Read/Reset (RD) Instruction. The Read/Reset instruction consists of one write cycle giving the command F0h. It can be optionallypreceded by the two Coded cycles. Subsequentread operationswill read the memory array addressed and output the data read. A wait state of 10µs is necessary after Read/Reset prior to any valid read if the memory was in an Erase mode when the RD instruction is given. Auto Select (AS) Instruction. This instruction uses the two Coded cycles followed by one write cycle giving the command 90h to address AAAAh in the Byte-wide configuration or address 5555h in the Word-wide configuration for command set-up. A subsequent read will output the manufacturer code and the device code or the block protection status depending on the levels of A0 and A1. The manufacturer code, 20h, is output when the addresses lines A0 and A1 are Low, the device code, D0h for Top Boot, D1h for Bottom Boot is output when A0 is High with A1 Low. The AS instruction also allows access to the block protectionstatus. After givingthe AS instruction,A0 is set to VIL with A1 at VIH, while A12-A15 define the address of the block to be verified. A read in these conditions will output a 01h if the block is protected and a 00h if the block is not protected. Program (PG) Instruction. This instruction uses four write cycles. Both for Byte-wide configuration and for Word-wide configuration. The Program command A0h is written to address AAAAh in the Byte-wide configuration or to address 5555h in the Word-wide configuration on the third cycle after two Coded cycles. A fourth write operation latches the Address on the falling edge of W or E and the Data to be written on the rising edge and starts the P/E.C. Read operations output the Status Register bits after the programming has started. Memory programming is made only by writing ’0’ in place of ’1’. Status bits DQ6 and DQ7 determine if programming is on-goingand DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In this case, DQ2 will toggle at the address being programmed. 11/30 M29F100T, M29F100B Table 11. AC Measurement Conditions High Speed Standard Input Rise and Fall Times ≤ 10ns ≤ 10ns Input Pulse Voltages 0 to 3V 0.45V to 2.4V 1.5V 0.8V and 2V Input and Output Timing Ref. Voltages Figure 4. AC Testing Input Output Waveform Figure 5. AC Testing Load Circuit 1.3V High Speed 1N914 3V 1.5V 3.3kΩ 0V DEVICE UNDER TEST Standard 2.4V OUT CL 2.0V 0.8V 0.45V CL = 30pF for High Speed CL = 100pF for Standard AI01275B CL includes JIG capacitance AI01276B Table 12. Capacitance (1) (TA = 25 °C, f = 1 MHz ) Symbol C IN C OUT Parameter Test Condition Max Unit VIN = 0V 6 pF VOUT = 0V 12 pF Input Capacitance Output Capacitance Min Note: 1. Sampled only, not 100% tested. Block Erase (BE) Instruction. This instruction uses a minimum of six write cycles. The Erase Set-up command 80h is written to address AAAAh in the Byte-wide configuration or address 5555h in the Word-wide configuration on third cycle after the two Coded cycles. The Block Erase Confirm command 30h is similarly written on the sixth cycle after another two Coded cycles. During the input of the second command an addresswithin the block to be erased is given and latched into the memory. Additional block Erase Confirm commands and block addresses can be written subsequently to erase other blocks in parallel, without further Coded cycles. The erase will start after the erase timeout period (see Erase Timer Bit DQ3 description). 12/30 Thus, additional Erase Confirm commands for other blocks must be given within this delay. The input of a new Erase Confirm command will restart the timeout period. The status of the internal timer can be monitored through the level of DQ3, if DQ3 is ’0’ the Block Erase Command has been given and the timeout is running, if DQ3 is ’1’, the timeout has expired and the P/E.C. is erasing the Block(s). If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts, and the device is reset to Read Array. It is not necessary to program the block with 00h as the P/E.C. will do this automatically before to erasing to FFh. Read operations after the sixth rising edge of W or E output the status register status bits. M29F100T, M29F100B Table 13. DC Characteristics (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C; VCC = 5V ± 10%) Symbol Parameter Test Condition Min Max Unit 0V ≤ VIN ≤ VCC ±1 µA 0V ≤ VOUT ≤ VCC ±1 µA ILI Input Leakage Current ILO Output Leakage Current ICC1 Supply Current (Read) TTL Byte E = VIL, G = VIH, f = 6MHz 20 mA ICC1 Supply Current (Read) TTL Word E = VIL, G = VIH, f = 6MHz 20 mA ICC2 Supply Current (Standby) TTL E = VIH 1 mA ICC3 Supply Current (Standby) CMOS E = VCC ± 0.2V 100 µA Byte program, Block or Chip Erase in progress 20 mA ICC4 (1) Supply Current (Program or Erase) VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 2 VCC + 0.5 V VOL Output Low Voltage 0.45 V VOH Output High Voltage TTL IOH = –2.5mA 2.4 V Output High Voltage CMOS IOH = –100µA VCC –0.4V V VID A9 Voltage (Electronic Signature) IID A9 Current (Electronic Signature) VLKO IOL = 5.8mA Supply Voltage (Erase and Program lock-out) 11.0 A9 = VID 3.2 12.0 V 100 µA 4.2 V Note: 1. Sampled only, not 100% tested. During the executionof the erase by the P/E.C., the memory accepts only the Erase Suspend ES and Read/Reset RD instructions. Data Polling bit DQ7 returns ’0’ while the erasure is in progress and ’1’ when it has completed. The Toggle bit DQ2 and DQ6 toggle during the erase operation. They stop when erase is completed. After completion the Status Register bit DQ5 returns’1’ if there has been an erase failure. In such a situation, the Toggle bit DQ2 can be used to determine which block is not correctly erased. In the case of erase failure, a Read/Reset RD instruction is necessary in order to reset the P/E.C. ChipErase (CE) Instruction. This instructionuses six write cycles. The Erase Set-up command 80h is written to address AAAAh in the Byte-wide configuration or the address 5555h in the Word-wide configurationon the third cycle after the two Coded cycles. The Chip Erase Confirm command 10h is similarly written on the sixth cycle after anothertwo Coded cycles. If the second command given is not an erase confirm or if the Coded cycles are wrong, the instruction aborts and the device is reset to Read Array. It is not necessaryto programthe array with 00h firstas theP/E.C. will automaticallydo this before erasing it to FFh. Read operations after the sixth rising edge of W or E output the Status Register bits. During the execution of the erase by the P/E.C., Data Polling bit DQ7 returns ’0’, then ’1’ on completion. The Toggle bits DQ2 and DQ6 toggle during erase operation and stop when erase is completed. After completion the Status Register bit DQ5 returns ’1’ if there has been an Erase Failure. 13/30 M29F100T, M29F100B Table 14. Read AC Characteristics (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) M29F100T / M29F100B -70 Symbol Alt Parameter Test Condition -90 VCC = 5V ± 5% V CC = 5V ± 10% VCC = 5V ± 10% Unit High Speed Interface Min tAVAV tRC Address Valid to Next Address Valid E = VIL, G = VIL tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL tELQV (2) tCE Chip Enable Low to Output Valid G = VIL tGLQX (1) tOLZ Output Enable Low to Output Transition E = VIL (2) tOE Output Enable Low to Output Valid E = VIL tEHQX tOH Chip Enable High to Output Transition G = VIL tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL tGHQX tOH Output Enable High to Output Transition E = VIL tDF Output Enable High to Output Hi-Z E = VIL tOH Address Transition to Output Transition tGLQV tGHQZ (1) tAXQX tPLYH (1,3) E = VIL, G = VIL -120 Max 70 Standard Interface Min 90 70 0 0 0 0 0 0 0 0 0 20 0 0 0 10 ns ns 30 0 10 ns ns 30 20 ns ns 50 20 ns ns 120 35 20 ns 120 90 30 Max 120 0 0 Min 90 70 tRRB RP Low to Read tREADY Mode Max Standard Interface ns ns 10 µs tPHEL tRH RP High to Chip Enable Low 50 50 50 ns tPLPX tRP RP Pulse Width 500 500 500 ns tELBL tELBH Chip Enable to BYTE tELFL Switching Low or tELFH High 5 5 5 ns tBLQZ BYTE Switching Low tFLQZ to Output High Z 30 40 40 ns tBHQV BYTE Switching tFHQV High to Output Valid 30 40 40 ns Notes: 1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV. 3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode. 14/30 Note: Write Enable (W) = High BYTE DQ0-DQ7/ DQ8-DQ15 G E A0-A15/ A–1 ADDRESS VALID AND CHIP ENABLE tELBL/tELBH tAVQV tGLQV OUTPUT ENABLE tGLQX tELQX tELQV VALID tAVAV DATA VALID tBLQZ VALID tGHQZ tGHQX tEHQX tEHQZ tAXQX AI01979B M29F100T, M29F100B Figure 6. Read Mode AC Waveforms 15/30 M29F100T, M29F100B Table 15. Write AC Characteristics, Write Enable Controlled (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) M29F100T / M29F100B -70 Symbol Alt Parameter -90 -120 VCC = 5V ± 5% VCC = 5V ± 10% VCC = 5V ± 10% High Speed Interface Min Max Standard Interface Min Max Unit Standard Interface Min Max tAVAV tWC Address Valid to Next Address Valid 70 90 120 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 0 ns tWLWH tWP Write Enable Low to Write Enable High 35 45 50 ns tDVWH tDS Input Valid to Write Enable High 30 45 50 ns tWHDX tDH Write Enable High to Input Transition 0 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 20 20 20 ns tAVWL tAS Address Valid to Write Enable Low 0 0 0 ns tWLAX tAH Write Enable Low to Address Transition 45 45 50 ns Output Enable High to Write Enable Low 0 0 0 ns tGHWL tVCHEL tVCS VCC High to Chip Enable Low 50 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 0 ns 500 500 500 ns 500 500 500 ns tPHPHH (1,2) tPLPX tWHRL (1) tPHWL (1) tVIDR RP Rise Time to VID tRP RP Pulse Width tBUSY Program Erase Valid to RB Delay tRSP RP High to Write Enable Low 30 4 35 4 50 4 ns µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruction which consists of writing the command B0h without any specific address. No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase 16/30 timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops togglingwhen the P/E.C. is suspended.The Toggle bits will stop toggling between 0.1µs and 15µs after the Erase Suspend (ES) command has been written. The device will then automatically be set to Read Memory Array mode. When erase is suspended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from M29F100T, M29F100B Figure 7. Write AC Waveforms, W Controlled tAVAV A0-A15/ A–1 VALID tWLAX tAVWL tWHEH E tELWL tWHGL G tGHWL tWLWH W tWHWL tDVWH DQ0-DQ7/ DQ8-DQ15 tWHDX VALID VCC tVCHEL RB tWHRL AI01980B Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume ER and the Program PG instructions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is beingprogrammed. ARead/Reset command will definitively abort erasure and result in invalid data in the blocks being erased. Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. POWER SUPPLY Power Up The memory Command Interface is reset on power up to Read Array. Either E or W must be tied to VIH during Power Up to allow maximum security and the possibility to write a command on the first rising edge of E and W. Any write cycle initiation is blocked when Vcc is below VLKO. Supply Rails Normal precautions must be taken for supply voltage decoupling; each device in a system should have the VCC rail decoupledwith a 0.1µF capacitor close to the VCC and VSS pins. The PCB trace widths should be sufficient to carry the VCC program and erase currents required. 17/30 M29F100T, M29F100B Table 16. Write AC Characteristics, Chip Enable Controlled (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) M29F100T / M29F100B -70 Symbol Alt Parameter -90 VCC = 5V ± 5% High Speed Interface Min Max -120 VCC = 5V ± 10% VCC = 5V ± 10% Standard Interface Min Max Unit Standard Interface Min Max tAVAV tWC Address Valid to Next Address Valid 70 90 120 ns tWLEL tWS Write Enable Low to Chip Enable Low 0 0 0 ns tELEH tCP Chip Enable Low to Chip Enable High 35 45 50 ns tDVEH tDS Input Valid to Chip Enable High 30 45 50 ns tEHDX tDH Chip Enable High to Input Transition 0 0 0 ns tEHWH tWH Chip Enable High to Write Enable High 0 0 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low 20 20 20 ns tAVEL tAS Address Valid to Chip Enable Low 0 0 0 ns tELAX tAH Chip Enable Low to Address Transition 45 45 50 ns Output Enable High Chip Enable Low 0 0 0 ns tGHEL tVCHWL tVCS VCC High to Write Enable Low 50 50 50 µs tEHGL tOEH Chip Enable High to Output Enable Low 0 0 0 ns tPHPHH (1,2) tVIDR RP Rise TIme to VID 500 500 500 ns tPLPX tRP RP Pulse Width 500 500 500 ns tEHRL (1) tBUSY tPHWL (1) tRSP Program Erase Valid to RB Delay RP High to Write Enable Low Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 18/30 30 4 35 4 50 4 ns µs M29F100T, M29F100B Figure 8. Write AC Waveforms, E Controlled tAVAV A0-A15/ A–1 VALID tELAX tAVEL tEHWH W tWLEL tEHGL G tGHEL tELEH E tEHEL tDVEH DQ0-DQ7/ DQ8-DQ15 tEHDX VALID VCC tVCHWL RB tEHRL AI01981B Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related E tPHEL W tPHWL RB RP tPLPX tPHPHH tPLYH AI02091 19/30 M29F100T, M29F100B Table 17. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C) M29F100T / M29F100B Symbol tWHQ7V tEHQ7V tQ7VQV tWHQV tEHQV Parameter -70 -90 -120 VCC = 5V ± 5% VCC = 5V ± 10% VCC = 5V ± 10% High Speed Interface Standard Interface Standard Interface Min Max Min Max Min Max Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 10 2400 µs Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 30 1.0 30 1.0 30 sec Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 30 1.0 30 1.0 30 sec 50 ns Q7 Valid to Output Valid (Data Polling) 30 35 Write Enable High to Output Valid (Program) 10 2400 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 1.0 30 sec Chip Enable High to Output Valid (Program) 10 2400 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 1.0 30 sec Note: 1. All other timings are defined in Read AC Characteristics table. 20/30 Unit DQ0-DQ6/ DQ8-DQ15 DQ7 W G E A0-A15/ A–1 LAST WRITE CYCLE OF PROGRAM OR ERASE INSTRUCTION DATA POLLING READ CYCLES tWHQ7V tEHQ7V tELQV tAVQV tQ7VQV IGNORE DQ7 DATA POLLING (LAST) CYCLE tGLQV ADDRESS (WITHIN BLOCKS) VALID VALID DATA OUTPUT VALID AI01982B MEMORY ARRAY READ CYCLE M29F100T, M29F100B Figure 10. Data Polling DQ7 AC Waveforms 21/30 M29F100T, M29F100B Figure 11. Data Polling Flowchart Figure 12. Data Toggle Flowchart START START READ DQ2, DQ5 & DQ6 READ DQ5 & DQ7 at VALID ADDRESS DQ7 = DATA NO NO YES NO DQ5 =1 DQ5 =1 YES YES READ DQ2, DQ6 READ DQ7 DQ7 = DATA NO DQ2, DQ6 = TOGGLE YES YES DQ2, DQ6 = TOGGLE NO FAIL NO YES PASS FAIL PASS AI01369 AI01873 Table 18. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70°C; VCC = 5V ± 10% or 5V ± 5%) M29F100T / M29F100B Parameter Unit Typ Typical after 100k W/E Cycles Chip Erase (Preprogrammed) 0.4 0.6 sec Chip Erase 1.5 1.7 sec Boot Block Erase 0.6 sec Parameter Block Erase 0.5 sec Main Block (32Kb) Erase 0.9 sec Main Block (64Kb) Erase 1.0 sec Chip Program (Byte) 1.4 1.4 sec Byte Program 11 11 µs Word Program 20 20 µs Min Program/Erase Cycles (per Block) 22/30 100,000 cycles DATA TOGGLE READ CYCLE Note: All other timings are as a normal Read cycle. LAST WRITE CYCLE OF PROGRAM OF ERASE INSTRUCTION DQ0-DQ1,DQ3-DQ5,DQ7/ DQ8-DQ15 DQ6,DQ2 W G E A0-A15/ A–1 DATA TOGGLE READ CYCLE IGNORE STOP TOGGLE tWHQV tEHQV tAVQV MEMORY ARRAY READ CYCLE VALID VALID tGLQV tELQV VALID AI01983B M29F100T, M29F100B Figure 13. Data Toggle DQ6, DQ2 AC Waveforms 23/30 M29F100T, M29F100B Figure 14. Block Protection Flowchart START BLOCK ADDRESS on A12-A15 W = VIH Set-up n=0 G, A9 = VID, E = VIL Wait 4µs W = VIL Protect Wait 100µs W = VIH E, G = VIH Verify VERIFY BLOCK PROTECTION A0, A6 = VIL; A1 = VIH; A9 = VID A12-A15 IDENTIFY BLOCK E = VIL Wait 4µs G = VIL Wait 60ns VERIFY BLOCK PROTECT STATUS DATA = 01h NO YES A9 = VIH ++n = 25 NO PASS YES A9 = VIH FAIL AI01984C 24/30 M29F100T, M29F100B Figure 15. All Blocks Unprotecting Flowchart START PROTECT ALL BLOCKS n=0 Set-up W = VIH E, G, A9 = VID A12, A15 = VIH Wait 4µs W = VIL Unprotect Wait 10ms W = VIH Verify E, G = VIH E, A0 = VIL; A1, A6 = VIH; A9 = VID A12-A15 IDENTIFY BLOCK NEXT BLOCK Wait 4µs G = VIL Wait 60ns VERIFY BLOCK PROTECT STATUS NO NO ++n = 1000 YES DATA = 00h YES LAST BLK. NO YES A9 = VIH A9 = VIH FAIL PASS AI01985D 25/30 M29F100T, M29F100B ORDERING INFORMATION SCHEME Example: M29F100T -70 X N 1 TR Option Operating Voltage F R 5V Reverse Pinout TR Tape & Reel Packing Array Matrix T Top Boot B Bottom Boot Speed -70 70ns -90 90ns -120 120ns Package Power Supplies blank VCC ± 10% X VCC ± 5% N TSOP48 12 x 20mm M SO44 Temp. Range 1 0 to 70 °C 6 –40 to 85 °C 3 –40 to 125 °C Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further informationon any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. 26/30 M29F100T, M29F100B TSOP48 Normal Pinout - 48 lead Plastic Thin Small Outline, 12 x 20mm mm Symb Typ inches Min Max A Typ Min 1.20 Max 0.047 A1 0.05 0.15 0.002 0.006 A2 0.95 1.05 0.037 0.041 B 0.17 0.27 0.007 0.011 C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795 D1 18.30 18.50 0.720 0.728 E 11.90 12.10 0.469 0.476 - - - - L 0.50 0.70 0.020 0.028 α 0° 5° 0° 5° N 48 e 0.50 0.020 48 CP 0.10 0.004 A2 1 N e E B N/2 D1 A CP D DIE C TSOP-a A1 α L Drawing is not to scale. 27/30 M29F100T, M29F100B TSOP48 Reverse Pinout - 48 lead Plastic Thin Small Outline, 12 x 20mm mm Symb Typ inches Min Max A Typ Min 1.20 0.047 A1 0.05 0.15 0.002 0.006 A2 0.95 1.05 0.037 0.041 B 0.17 0.27 0.007 0.011 C 0.10 0.21 0.004 0.008 D 19.80 20.20 0.780 0.795 D1 18.30 18.50 0.720 0.728 E 11.90 12.10 0.469 0.476 – – – – L 0.50 0.70 0.020 0.028 α 0° 5° 0° 5° N 48 e 0.50 0.020 48 CP 0.10 0.004 A2 1 N e E B N/2 D1 A CP D DIE C TSOP-b Drawing is not to scale. 28/30 Max A1 α L M29F100T, M29F100B SO44 - 44 lead Plastic Small Outline, 525 mils body width mm Symb Typ inches Min Max A 2.42 A1 A2 Min Max 2.62 0.095 0.103 0.22 0.23 0.009 0.010 2.25 2.35 0.089 0.093 B Typ 0.50 0.020 C 0.10 0.25 0.004 0.010 D 28.10 28.30 1.106 1.114 E 13.20 13.40 0.520 0.528 0.626 0.634 e 1.27 0.050 H 15.90 16.10 L 0.80 0.031 α 3° 3° N 44 CP 44 0.10 A2 0.004 A C B CP e D N E H 1 A1 α L SO-b Drawing is not to scale. 29/30 M29F100T, M29F100B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 30/30