STMicroelectronics M295V200BB45N1T 2 mbit 256kb x8 or 128kb x16, boot block single supply flash memory Datasheet

M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
PRELIMINARY DATA
■
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 45ns
■
PROGRAMMING TIME
– 8µs per Byte/Word typical
■
44
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
1
TSOP48 (N)
12 x 20mm
SO44 (M)
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
■
ERASE SUSPEND and RESUME MODES
Figure 1. Logic Diagram
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
VCC
– Faster Production/Batch Programming
■
■
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
■
■
17
15
A0-A16
DQ0-DQ14
W
100,000 PROGRAM/ERASE CYCLES per
BLOCK
E
20 YEARS DATA RETENTION
G
– Defectivity below 1 ppm/year
RP
DQ15A–1
M29F200BT
M29F200BB
BYTE
RB
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– M29F200BT Device Code: 00D3h
– M29F200BB Device Code: 00D4h
VSS
AI02912
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/22
M29F200BT, M29F200BB
Figure 2A. TSOP Connections
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
12
13
Figure 2B. SO Connections
48
37
36
M29F200BT
M29F200BB
24
25
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
NC
RB
NC
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
11 M29F200BT 34
12 M29F200BB 33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
24
21
22
23
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
AI02914
AI02913
Table 1. Signal Names
A0-A16
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
2/22
SUMMARY DESCRIPTION
The M29F200B is a 2 Mbit (256Kb x8 or 128Kb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be performed using a single 5V supply. On power-up the
memory defaults to its Read mode where it can be
read in the same way as a ROM or EPROM. The
M29F200B is fully backward compatible with the
M29F200.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are written to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
M29F200BT, M29F200BB
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°C
Ambient Operating Temperature (Temperature Range Option 3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage
–0.6 to 6
V
VCC
Supply Voltage
–0.6 to 6
V
VID
Identification Voltage
–0.6 to 13.5
V
TA
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
The blocks in the memory are asymmetrically arranged, see Tables 3A and 3B, Block Addresses.
The first or last 64 Kbytes have been divided into
four additional blocks. The 16 Kbyte Boot Block
can be used for small initialization code to start the
microprocessor, the two 8 Kbyte Parameter
Blocks can be used for parameter storage and the
remaining 32K is a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and SO44 packages. Access times of 45ns, 55ns,
70ns and 90ns are available. The memory is supplied with all the bits erased (set to ’1’).
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connected to this device.
Address Inputs (A0-A16). The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sent to the Command Interface of the internal state
machine.
Data Inputs/Outputs (DQ8-DQ14). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation when BYTE
is High, VIH. When BYTE is Low, VIL, these pins
are not used and are high impedance. During Bus
Write operations the Command Register does not
use these bits. When reading the Status Register
these bits should be ignored.
Data Input/Output or Address Input (DQ15A-1).
When BYTE is High, V IH, this pin behaves as a
Data Input/Output pin (as DQ8-DQ14). When
BYTE is Low, VIL, this pin behaves as an address
pin; DQ15A–1 Low will select the LSB of the Word
on the other addresses, DQ15A–1 High will select
the MSB. Throughout the text consider references
to the Data Input/Output to include this pin when
BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except
when stated explicitly otherwise.
Chip Enable (E). The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is
High, VIH, all other pins are ignored.
Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory.
Write Enable (W). The Write Enable, W, controls
the Bus Write operation of the memory’s Command Interface.
3/22
M29F200BT, M29F200BB
Table 3A. M29F200BT Block Addresses
Table 3B. M29F200BB Block Addresses
Size
(Kbytes)
Address Range
(x8)
Address Range
(x16)
Size
(Kbytes)
Address Range
(x8)
Address Range
(x16)
16
3C000h-3FFFFh
1E000h-1FFFFh
64
30000h-3FFFFh
18000h-1FFFFh
8
3A000h-3BFFFh
1D000h-1DFFFh
64
20000h-2FFFFh
10000h-17FFFh
8
38000h-39FFFh
1C000h-1CFFFh
64
10000h-1FFFFh
08000h-0FFFFh
32
30000h-37FFFh
18000h-1BFFFh
32
08000h-0FFFFh
04000h-07FFFh
64
20000h-2FFFFh
10000h-17FFFh
8
06000h-07FFFh
03000h-03FFFh
64
10000h-1FFFFh
08000h-0FFFFh
8
04000h-05FFFh
02000h-02FFFh
64
00000h-0FFFFh
00000h-07FFFh
16
00000h-03FFFh
00000h-01FFFh
Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to
apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected.
A Hardware Reset is achieved by holding Reset/
Block Temporary Unprotect Low, VIL, for at least
tPLPX. After Reset/Block temporary unprotect goes
High, VIH, the memory will be ready for Bus Read
and Bus Write operations after tPHEL or tRHEL,
whichever occurs last. See the Ready/Busy Output section, Table 14 and Figure 10, Reset/Temporary Unprotect AC Characteristics for more
details.
Holding RP at V ID will temporarily unprotect the
protected Blocks in the memory. Program and
Erase operations on all blocks will be possible.
The transition from VIH to VID must be slower than
tPHPHH.
Ready/Busy Output (RB). The Ready/Busy pin
is an open-drain output that can be used to identify
when the memory array can be read. Ready/Busy
is high-impedance during Read mode, Auto Select
mode and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy becomes high-impedance. See Table 14 and Figure
10, Reset/Temporary Unprotect AC Characteristics.
During Program or Erase operations Ready/Busy
is Low, VOL. Ready/Busy will remain Low during
4/22
Read/Reset commands or Hardware Resets until
the memory is ready to enter Read mode.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE). The Byte/
Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus modes of the memory. When Byte/Word Organization Select is Low,
VIL, the memory is in 8-bit mode, when it is High,
VIH, the memory is in 16-bit mode.
VCC Supply Voltage. The VCC Supply Voltage
supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the VCC
Supply Voltage is less than the Lockout Voltage,
VLKO. This prevents Bus Write operations from accidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memory contents being altered will be invalid.
A 0.1µF capacitor should be connected between
the VCC Supply Voltage pin and the VSS Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during program and
erase operations, I CC4.
Vss Ground. The VSS Ground is the reference
for all voltage measurements.
M29F200BT, M29F200BB
Table 4A. Bus Operations, BYTE = VIL
Operation
E
G
Address Inputs
DQ15A–1, A0-A16
W
Data Inputs/Outpu ts
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
V IH
Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL
Command Address
Hi-Z
Data Input
X
VIH
V IH
X
Hi-Z
Hi-Z
Standby
V IH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer
Code
VIL
VIL
V IH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
20h
Read Device Code
VIL
VIL
V IH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
D3h (M29F200BT)
D4h (M29F200BB)
Output Disable
Note: X = VIL or VIH.
Table 4B. Bus Operations, BYTE = VIH
Operation
Address Inputs
A0-A16
Data Inputs/Outpu ts
DQ15A–1, DQ14-DQ0
E
G
W
Bus Read
VIL
VIL
V IH
Cell Address
Bus Write
VIL
VIH
VIL
Command Address
X
VIH
V IH
X
Hi-Z
Standby
V IH
X
X
X
Hi-Z
Read Manufacturer
Code
VIL
VIL
V IH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
0020h
Read Device Code
VIL
VIL
V IH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
00D3h (M29F200BT)
00D4h (M29F200BB)
Output Disable
Data Output
Data Input
Note: X = VIL or VIH.
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See
Tables 4A and 4B, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory
and do not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, V IL, to Chip Enable
and Output Enable and keeping Write Enable
High, VIH. The Data Inputs/Outputs will output the
value, see Figure 7, Read Mode AC Waveforms,
and Table 11, Read AC Characteristics, for details
of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Address Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus
Write operation. See Figures 8 and 9, Write AC
Waveforms, and Tables 12 and 13, Write AC
Characteristics, for details of the timing requirements.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, VIH.
5/22
M29F200BT, M29F200BB
Standby. When Chip Enable is High, VIH, the
Data Inputs/Outputs pins are placed in the highimpedance state and the Supply Current is reduced to the Standby level.
When Chip Enable is at VIH the Supply Current is
reduced to the TTL Standby Supply Current, I CC2.
To further reduce the Supply Current to the CMOS
Standby Supply Current, ICC3, Chip Enable should
be held within VCC ± 0.2V. For Standby current
levels see Table 10, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, ICC4, for Program or Erase operations until the operation completes.
Automatic Standby. If CMOS levels (VCC ± 0.2V)
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is reduced to the CMOS Standby Supply Current, ICC3.
The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications.
They require VID to be applied to some pins.
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Tables 4A and 4B, Bus Operations.
Block Protection and Blocks Unprotection. Each
block can be separately protected against accidental Program or Erase. Protected blocks can be
unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on programming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotection to M29 Series Flash.
6/22
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus
Write operations will result in the memory returning to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 5A, or 5B, depending
on the configuration that is being used, for a summary of the commands.
Read/Reset Command. The Read/Reset command returns the memory to its Read mode where
it behaves like a ROM or EPROM. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Block Erase operation or following a Programming
or Erase error then the memory will take upto 10µs
to abort. During the abort period no valid data can
be read from the memory. Issuing a Read/Reset
command during a Block Erase operation will
leave invalid data in the memory.
Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are required to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until another command is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits
may be set to either VIL or VIH. The Manufacturer
Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read
operation with A0 = VIH and A1 = VIL. The other
address bits may be set to either VIL or VIH. The
Device Code for the M29F200BT is 00D3h and for
the M29F200BB is 00D4h.
M29F200BT, M29F200BB
Command
Length
Table 5A. Commands, 16-bit mode, BYTE = VIH
Bus Write Operations
1st
2nd
Addr
Data
1
X
F0
3
555
Auto Select
3
Program
3rd
4th
Addr
Data
Addr
Data
AA
2AA
55
X
F0
555
AA
2AA
55
555
90
4
555
AA
2AA
55
555
A0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
Block Erase
6+
555
AA
2AA
55
555
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read/Reset
5th
Addr
Data
PA
PD
80
555
80
555
6th
Addr
Data
Addr
Data
AA
2AA
55
555
10
AA
2AA
55
BA
30
Command
Length
Table 5B. Commands, 8-bit mode, BYTE = VIL
Bus Write Operations
1st
2nd
Addr
Data
1
X
F0
3
AAA
Auto Select
3
Program
3rd
4th
Addr
Data
Addr
Data
AA
555
55
X
F0
AAA
AA
555
55
AAA
90
4
AAA
AA
555
55
AAA
A0
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
Block Erase
6+
AAA
AA
555
55
AAA
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read/Reset
5th
Addr
Data
PA
PD
80
AAA
80
AAA
6th
Addr
Data
Addr
Data
AA
555
55
AAA
10
AA
555
55
BA
30
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A16, DQ8-DQ14 and DQ15 are Don’t Care.
DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/Erase
Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional Bus Writ e
Operations until the Timeout Bit is set.
Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands
on non-erasing blocks as normal.
Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode.
7/22
M29F200BT, M29F200BB
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
Typ (1)
Typical after
100k W/E Cycles (1)
Chip Erase (All bits in the memory set to ‘0’)
0.8
0.8
Chip Erase
2.5
2.5
10
sec
Block Erase (64 Kbytes)
0.6
0.6
4
sec
Program (Byte or Word)
8
8
150
µs
Chip Program (Byte by Byte)
2.3
2.3
9
sec
Chip Program (Word by Word)
1.2
1.2
4.5
sec
Parameter
Program/Erase Cycles (per Block)
Min
100,000
Max
Unit
sec
cycles
Note: 1. TA = 25°C, VCC = 5V.
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = VIL,
A1 = VIH, and A12-A16 specifying the address of
the block. The other address bits may be set to either VIL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs
DQ0-DQ7, otherwise 00h is output.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal
state machine and starts the Program/Erase Controller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 6. Bus Read operations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode.
8/22
Note that the Program command cannot change a
bit set at ’0’ back to ’1’ and attempting to do so will
cause an error. One of the Erase Commands must
be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
Unlock Bypass Command. The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memory. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these commands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock Bypass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
Unlock Bypass Program Command. The Unlock Bypass Program command can be used to
program one address in memory at a time. The
command requires two Bus Write operations, the
final write operation latches the address and data
in the internal state machine and starts the Program/Erase Controller.
The Program operation using the Unlock Bypass
Program command behaves identically to the Program operation using the Program command. A
protected block cannot be programmed; the operation cannot be aborted and the Status Register is
read. Errors must be reset using the Read/Reset
command, which leaves the device in Unlock Bypass Mode. See the Program command for details
on the behavior.
M29F200BT, M29F200BB
Unlock Bypass Reset Command. The Unlock
Bypass Reset command can be used to return to
Read/Reset mode from Unlock Bypass Mode.
Two Bus Write operations are required to issue the
Unlock Bypass Reset command.
Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus
Write operations are required to issue the Chip
Erase Command and start the Program/Erase
Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation appears to start but will terminate within about 100µs,
leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the erase operation the memory will ignore
all commands. It is not possible to issue any command to abort the operation. Typical chip erase
times are given in Table 6. All Bus Read operations during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous
data is lost.
Block Erase Command. The Block Erase command can be used to erase a list of one or more
blocks. Six Bus Write operations are required to
select the first block in the list. Each additional
block in the list can be selected by repeating the
sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts
the Program/Erase Controller about 50µs after the
last Bus Write operation. Once the Program/Erase
Controller starts it is not possible to select any
more blocks. Each additional block must therefore
be selected within 50µs of the last block. The 50µs
timer restarts when an additional block is selected.
The Status Register can be read after the sixth
Bus Write operation. See the Status Register for
details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
If any selected blocks are protected then these are
ignored and all the other selected blocks are
erased. If all of the selected blocks are protected
the Block Erase operation appears to start but will
terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored.
During the Block Erase operation the memory will
ignore all commands except the Erase Suspend
and Read/Reset commands. Typical block erase
times are given in Table 6. All Bus Read operations during the Block Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Block Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode.
The Block Erase Command sets all of the bits in
the unprotected selected blocks to ’1’. All previous
data in the selected blocks is lost.
Erase Suspend Command. The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15µs of the Erase Suspend Command being issued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start immediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased will output the Status Register. It
is also possible to enter the Auto Select mode: the
memory will behave as in the Auto Select mode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command. The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
9/22
M29F200BT, M29F200BB
Table 7. Status Register Bits
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any Address
DQ7
Toggle
0
–
–
0
Program During Erase
Suspend
Any Address
DQ7
Toggle
0
–
–
0
Program Error
Any Address
DQ7
Toggle
1
–
–
0
Chip Erase
Any Address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
No Toggle
0
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erasing Block
1
No Toggle
0
1
Toggle
1
Block Erase
Erase Suspend
Non-Erasing Block
Data read as normal
1
Good Block Address
0
Toggle
1
1
No Toggle
0
Faulty Block Address
0
Toggle
1
1
Toggle
0
Erase Error
Note: Unspecified data bits should be ignored.
STATUS REGISTER
Bus Read operations from any address always
read the Status Register during Program and
Erase operations. It is also read during Erase Suspend when an address within a block being erased
is accessed.
The bits in the Status Register are summarized in
Table 7, Status Register Bits.
Data Polling Bit (DQ7). The Data Polling Bit can
be used to identify whether the Program/Erase
Controller has successfully completed its operation or if it has responded to an Erase Suspend.
The Data Polling Bit is output on DQ7 when the
Status Register is read.
During Program operations the Data Polling Bit
outputs the complement of the bit being programmed to DQ7. After successful completion of
the Program operation the memory returns to
Read mode and Bus Read operations from the address just programmed output DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state of
DQ7. After successful completion of the Erase operation the memory returns to Read Mode.
In Erase Suspend mode the Data Polling Bit will
output a ’1’ during a Bus Read operation within a
block being erased. The Data Polling Bit will
change from a ’0’ to a ’1’ when the Program/Erase
Controller has suspended the Erase operation.
Figure 3, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Ad10/22
dress is the address being programmed or an
address within the block being erased.
Toggle Bit (DQ6). The Toggle Bit can be used to
identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is
output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle
Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations at any address. After
successful completion of the operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will
output when addressing a cell within a block being
erased. The Toggle Bit will stop toggling when the
Program/Erase Controller has suspended the
Erase operation.
Figure 4, Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit.
Error Bit (DQ5). The Error Bit can be used to
identify errors detected by the Program/Erase
Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to
write the correct data to the memory. If the Error
Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit
is output on DQ5 when the Status Register is read.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’ and attempting to do so will
cause an error. One of the Erase commands must
be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
M29F200BT, M29F200BB
Figure 3. Data Polling Flowchart
Figure 4. Data Toggle Flowchart
START
START
READ DQ5 & DQ7
at VALID ADDRESS
READ
DQ5 & DQ6
DQ7
=
DATA
DQ6
=
TOGGLE
YES
YES
NO
NO
NO
DQ5
=1
DQ5
=1
YES
YES
READ DQ7
READ DQ6
DQ7
=
DATA
DQ6
=
TOGGLE
YES
NO
YES
NO
FAIL
NO
PASS
AI01369
Erase Timer Bit (DQ3). The Erase Timer Bit can
be used to identify the start of Program/Erase
Controller operation during a Block Erase command. Once the Program/Erase Controller starts
erasing the Erase Timer Bit is set to ’1’. Before the
Program/Erase Controller starts the Erase Timer
Bit is set to ’0’ and additional blocks to be erased
may be written to the Command Interface. The
Erase Timer Bit is output on DQ3 when the Status
Register is read.
Alternative Toggle Bit (DQ2). The Alternative
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the
Status Register is read.
During Chip Erase and Block Erase operations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses
FAIL
PASS
AI01370
within the blocks being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to addresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the error. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Operations from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased correctly.
11/22
M29F200BT, M29F200BB
Table 8. AC Measurement Conditions
M29F200B
Parameter
45 / 55
70 / 90
High Speed
Standard
30pF
100pF
Input Rise and Fall Times
≤ 10ns
≤ 10ns
Input Pulse Voltages
0 to 3V
0.45 to 2.4V
1.5V
0.8V and 2.0V
AC Test Conditions
Load Capacitance (CL)
Input and Output Timing Ref. Voltages
Figure 5. AC Testing Input Output Waveform
Figure 6. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
Standard
2.4V
OUT
CL = 30pF or 100pF
2.0V
0.8V
0.45V
AI01275B
CL includes JIG capacitance
AI03027
Table 9. Capacitance
(TA = 25 °C, f = 1 MHz)
Symbol
C IN
COUT
Parameter
Input Capacitance
Output Capacitance
Note: Sampled only, not 100% tested.
12/22
Test Condition
Min
Max
Unit
V IN = 0V
6
pF
VOUT = 0V
12
pF
M29F200BT, M29F200BB
Table 10. DC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
Symbol
Parameter
Test Condition
Typ (2)
Max
Unit
0V ≤ VIN ≤ VCC
±1
µA
±1
µA
20
mA
1
mA
100
µA
20
mA
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤ VOUT ≤ V CC
ICC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
ICC2
Supply Current (Standby) TTL
ICC3
Supply Current (Standby) CMOS
E = VCC ± 0.2V,
RP = VCC ± 0.2V
ICC4 (1)
Supply Current (Program/Erase)
Program/Erase
Controller active
Min
6
E = VIH
30
V IL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
0.45
V
Output High Voltage TTL
IOH = –2.5mA
2.4
V
Output High Voltage CMOS
IOH = –100µA
VCC – 0.4
V
VOH
VID
Identification Voltage
IID
Identification Current
V LKO (1)
IOL = 5.8mA
Program/Erase Lockout Supply
Voltage
11.5
A9 = VID
3.2
12.5
V
100
µA
4.2
V
Note: 1. Sampled only, not 100% tested.
2. TA = 25°C, VCC = 5V.
13/22
M29F200BT, M29F200BB
Table 11. Read AC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F200B
Symbol
Alt
Parameter
Test Condition
Unit
45
55
70 / 90
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
Min
45
55
70
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
Max
45
55
70
ns
tELQX (1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
Min
0
0
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
45
55
70
ns
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
Min
0
0
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
25
30
30
ns
tEHQZ (1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
15
18
20
ns
tGHQZ (1)
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
15
18
20
ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
tELBL
tELBH
tELFL
tELFH
Chip Enable to BYTE Low or High
Max
5
5
5
ns
tBLQZ
tFLQZ
BYTE Low to Output Hi-Z
Max
15
15
20
ns
tBHQV
tFHQV
BYTE High to Output Valid
Max
30
30
30
ns
Note: 1. Sampled only, not 100% tested.
Figure 7. Read Mode AC Waveforms
tAVAV
A0-A16/
A–1
VALID
tAVQV
tAXQX
E
tELQV
tEHQX
tELQX
tEHQZ
G
tGLQX
tGHQX
tGLQV
tGHQZ
DQ0-DQ7/
DQ8-DQ15
VALID
tBHQV
BYTE
tELBL/tELBH
14/22
tBLQZ
AI02915
M29F200BT, M29F200BB
Table 12. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C)
M29F200B
Symbol
Alt
Parameter
Unit
45
55
70 / 90
tAVAV
tWC
Address Valid to Next Address Valid
Min
45
55
70
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
40
40
45
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
25
25
30
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
20
20
20
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
40
40
45
ns
Output Enable High to Write Enable Low
Min
0
0
0
ns
tGHWL
tWHGL
tOEH
Write Enable High to Output Enable Low
Min
0
0
0
ns
tWHRL (1)
tBUSY
Program/Erase Valid to RB Low
Max
30
30
30
ns
t VCHEL
tVCS
V CC High to Chip Enable Low
Min
50
50
50
µs
Note: 1. Sampled only, not 100% tested.
Figure 8. Write AC Waveforms, Write Enable Controlled
tAVAV
A0-A16/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
AI01991
15/22
M29F200BT, M29F200BB
Table 13. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C)
M29F200B
Symbol
Alt
Parameter
Unit
45
55
70 / 90
tAVAV
tWC
Address Valid to Next Address Valid
Min
45
55
70
ns
t WLEL
tWS
Write Enable Low to Chip Enable Low
Min
0
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
Min
40
40
45
ns
tDVEH
tDS
Input Valid to Chip Enable High
Min
25
25
30
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
20
20
20
ns
tAVEL
tAS
Address Valid to Chip Enable Low
Min
0
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
Min
40
40
45
ns
Output Enable High Chip Enable Low
Min
0
0
0
ns
t GHEL
t EHGL
tOEH
Chip Enable High to Output Enable Low
Min
0
0
0
ns
tEHRL (1)
tBUSY
Program/Erase Valid to RB Low
Max
30
30
30
ns
tVCHWL
tVCS
V CC High to Write Enable Low
Min
50
50
50
µs
Note: 1. Sampled only, not 100% tested.
Figure 9. Write AC Waveforms, Chip Enable Controlled
tAVAV
A0-A16/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
16/22
AI01992
M29F200BT, M29F200BB
Table 14. Reset/Block Temporary Unprotect AC Characteristics
(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C)
M29F200B
Symbol
Alt
tPHWL (1)
tPHEL
Parameter
Unit
45
55
70 / 90
tRH
RP High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
50
50
50
ns
tRB
RB High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
0
0
0
ns
tPLPX
tRP
RP Pulse Width
Min
500
500
500
ns
tPLYH (1)
tREADY
RP Low to Read Mode
Max
10
10
10
µs
tPHPHH (1)
tVIDR
RP Rise Time to VID
Min
500
500
500
ns
tPHGL
(1)
tRHWL (1)
tRHEL (1)
tRHGL
(1)
Note: 1. Sampled only, not 100% tested.
Figure 10. Reset/Block Temporary Unprotect AC Waveforms
W, E, G
tPHWL, tPHEL, tPHGL
RB
tRHWL, tRHEL, tRHGL
RP
tPLPX
tPHPHH
tPLYH
AI02931
17/22
M29F200BT, M29F200BB
Table 15. Ordering Information Scheme
Example:
M29F200BB
55
N
1
T
Device Type
M29
Operating Voltage
F = VCC = 5V ± 10%
Device Function
200B = 2 Mbit (256Kb x8 or 128Kb x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
45 = 45 ns
55 = 55 ns
70 = 70 ns
90 = 90 ns
Package
N = TSOP48: 12 x 20 mm
M = SO44
Temperature Range
1 = 0 to 70 °C
3 = –40 to 125 °C
6 = –40 to 85 °C
Optio n
T = Tape & Reel Packing
Note: The last two characters of the ordering code may be replaced by a letter code for preprogrammed
parts, otherwise devices are shipped from the factory with the memory content erased (to FFFFh).
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
18/22
M29F200BT, M29F200BB
Table 16. Revision History
Date
Revision Details
July 1999
First Issue
10/08/99
Chip Erase Max. specification added (Table 6)
Block Erase Max. specification added (Table 6)
Program Max. specification added (Table 6)
Chip Program Max. specification added (Table 6)
ICC1 Typ. specification added (Table 10)
ICC3 Typ. specification added (Table 10)
ICC3 Test Condition changed (Table 10)
19/22
M29F200BT, M29F200BB
Table 17. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data
mm
Symbol
Typ
inches
Min
Max
A
Typ
Min
1.20
0.047
A1
0.05
0.15
0.002
0.006
A2
0.95
1.05
0.037
0.041
B
0.17
0.27
0.007
0.011
C
0.10
0.21
0.004
0.008
D
19.80
20.20
0.780
0.795
D1
18.30
18.50
0.720
0.728
11.90
12.10
0.469
0.476
–
–
–
–
L
0.50
0.70
0.020
0.028
α
0°
5°
0°
5°
N
48
E
e
0.50
0.020
48
CP
0.10
0.004
Figure 11. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
A
CP
D
DIE
C
TSOP-a
Drawing is not to scale.
20/22
Max
A1
α
L
M29F200BT, M29F200BB
Table 18. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data
mm
inches
Symbol
Typ
Min
Max
A
2.42
A1
A2
Min
Max
2.62
0.095
0.103
0.22
0.23
0.009
0.010
2.25
2.35
0.089
0.093
B
Typ
0.50
0.020
C
0.10
0.25
0.004
0.010
D
28.10
28.30
1.106
1.114
E
13.20
13.40
0.520
0.528
–
–
–
–
15.90
16.10
0.626
0.634
e
1.27
H
0.050
L
0.80
–
–
0.031
–
–
α
3°
–
–
3°
–
–
N
44
CP
44
0.10
0.004
Figure 12. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline
A2
A
C
B
CP
e
D
N
E
H
1
A1
α
L
SO-b
Drawing is not to scale.
21/22
M29F200BT, M29F200BB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
 1999 STMicroelectronics - All Rights Reserved
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22/22