Numonyx M29W128FL60N6E 128 mbit (8mb x 16 or 16mb x 8, page, uniform block) 3v supply flash memory Datasheet

M29W128FH
M29W128FL
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block)
3V Supply Flash Memory
Feature summary
■
Supply voltage
– VCC = 2.7 to 3.6V for Program, Erase and
Read
– VPP =12V for Fast Program (optional)
■
Asynchronous Random/Page Read
– Page Width: 8 Words/16 Bytes
– Page Access: 25, 30ns
– Random Access: 60, 70ns
■
TSOP56 (N)
14 x 20mm
Programming time
– 10µs per Byte/Word (typical)
– 4 Words / 8 Bytes Program
– 32-Word (64-Bytes) Write Buffer
BGA
TBGA64 (ZA)
10 x 13mm
■
64 KByte (32 KWord) Uniform Blocks
■
Program/ Erase Suspend and Resume Modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■
Electronic Signature
– Manufacturer Code: 0020h
– Device Code:
M29W128FH: 227Eh + 2212h + 228Ah
M29W128FL: 227Eh + 2212h + 228Bh
■
Unlock Bypass Program
– Faster Production/Batch Programming
■
ECOPACK® packages
■
Common Flash Interface
– 64 bit Security Code
■
100,000 Program/Erase cycles per block
■
Low power consumption
– Standby and Automatic Standby
■
Hardware Block Protection
– VPP/WP pin for fast program and write
protect of the highest (M29W128FH) or
lowest block (M29W128FL)
■
Extended Memory Block:
Extra block used as security block or to store
additional information
December 2007
Rev 7
1/78
www.numonyx.com
1
Contents
M29W128FH, M29W128FL
Contents
1
Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
2.1
Address Inputs (A0-A22) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.2
Data Inputs/Outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3
Data Inputs/Outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.4
Data Input/Output or Address Input (DQ15A-1) . . . . . . . . . . . . . . . . . . . . 12
2.5
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.6
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.7
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.8
VPP/Write Protect (VPP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.9
Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.10
Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.11
Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.12
VCC supply voltage (2.7V to 3.6V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.13
Vss ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1
Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2
Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.4
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.5
Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6
Special Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Read Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6.2
Verify Extended Memory Block Protection Indicator . . . . . . . . . . . . . . . 17
3.6.3
Verify Block Protection Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6.4
Hardware Block Protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6.5
Temporary Unprotect of high voltage Protected Blocks . . . . . . . . . . . . . 18
Hardware protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.1
2/78
3.6.1
Write Protect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
M29W128FH, M29W128FL
4.2
5
Temporary Block Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1
5.2
5.3
6
Contents
Standard commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1.1
Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1.2
Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1.3
Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1.4
Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1.5
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1.6
Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.1.7
Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.1.8
Program Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.1.9
Program Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1.10
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Fast Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
5.2.1
Write to Buffer and Program command . . . . . . . . . . . . . . . . . . . . . . . . . 28
5.2.2
Write to Buffer and Program Confirm command . . . . . . . . . . . . . . . . . . 29
5.2.3
Write to Buffer and Program Abort and Reset command . . . . . . . . . . . 29
5.2.4
Double Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5.2.5
Quadruple Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.2.6
Double Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.2.7
Quadruple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.2.8
Octuple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.2.9
Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.2.10
Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.2.11
Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Extended Memory Block Protection commands . . . . . . . . . . . . . . . . . . . 34
5.3.1
Enter Extended Memory Block command . . . . . . . . . . . . . . . . . . . . . . . 34
5.3.2
Exit Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.0.1
Data Polling Bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.0.2
Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
6.0.3
Error Bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.0.4
Erase Timer Bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.0.5
Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
6.0.6
Write to Buffer and Program Abort Bit (DQ1) . . . . . . . . . . . . . . . . . . . . 38
3/78
Contents
M29W128FH, M29W128FL
7
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
8
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
9
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
10
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Appendix A Block addresses and Read/Modify Protection Groups . . . . . . . . . 54
Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
C.1
Factory Locked Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . 67
C.2
Customer Lockable Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . 68
Appendix D High Voltage Block Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
D.1
Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
D.2
In-System technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Appendix E Flowcharts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
4/78
M29W128FH, M29W128FL
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus operations, 8-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Read Electronic Signature, 8-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Block Protection, 8-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Bus operations, 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Read Electronic Signature, 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Block Protection, 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Hardware Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Standard commands, 8-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Standard commands, 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Fast Program commands, 8-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Fast Program commands, 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Extended Block Protection commands, 8-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Block Protection commands, 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Program, Erase Times and Program, Erase Endurance cycles . . . . . . . . . . . . . . . . . . . . . 36
Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Write AC characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Write AC characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Reset/Block Temporary Unprotect AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
TSOP56 – 56 lead Plastic Thin Small Outline, 14 x 20mm, package mechanical data . . . 51
TBGA64 10x13mm - 8x8 active ball array, 1mm pitch, package mechanical data. . . . . . . 52
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Block Addresses and Protection Groups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Security Code Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Extended Memory Block Address and Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Programmer technique Bus operations, 8-bit or 16-bit mode . . . . . . . . . . . . . . . . . . . . . . . 70
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
5/78
List of figures
M29W128FH, M29W128FL
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
6/78
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
TBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data Polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Toggle flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Random Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Page Read AC waveforms (Word mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Write AC waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Write AC waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Reset/Block Temporary Unprotect AC waveforms (No Program/Erase ongoing) . . . . . . . 49
Reset/Block Temporary Unprotect during Program/Erase operation AC waveforms . . . . . 49
Accelerated Program Timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
TSOP56 – 56 lead Plastic Thin Small Outline, 14 x 20mm, package outline . . . . . . . . . . . 51
TBGA64 10x13mm - 8x8 active ball array, 1mm pitch, package outline . . . . . . . . . . . . . . 52
Programmer equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Programmer equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
In-System equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
In-System equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Write to Buffer and Program flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . 75
M29W128FH, M29W128FL
1
Summary description
Summary description
The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile
memories that can be read, erased and reprogrammed. These operations can be performed
using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read
mode. The M29W128FH and M29W128FL are divided into 256 thirty-two KWord (sixty-four
KByte) uniform blocks.
Program and Erase commands are written to the Command Interface of the memory. An onchip Program/Erase Controller simplifies the process of programming or erasing the
memory by taking care of all of the special operations that are required to update the
memory contents. The end of a program or erase operation can be detected and any error
conditions identified. The command set required to control the memory is consistent with
JEDEC standards.
The Chip Enable, Output Enable and Write Enable signals control the bus operations of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The devices support Asynchronous Random Read and Page Read from all blocks of the
memory array.
The M29W128FH and M29W128FL have an extra 128 Word (256 Byte) Extended Memory
Block that can be accessed using a dedicated command. The Extended Memory Block can
be protected and so is useful for storing security information. However the protection is
irreversible, once protected the protection cannot be undone.
Each block can be erased independently, so it is possible to preserve valid data while old
data is erased.
The devices feature two different levels of hardware block protection to avoid unwanted
program or erase (modify):
●
The VPP/WP pin protects the highest block on the M29W128FH and the lowest block
on the M29W128FL.
●
The RP pin temporarily unprotects all the blocks previously protected using a High
Voltage Block Protection technique (see Appendix D: High Voltage Block Protection).
The memories are offered in TSOP56 (14 x 20mm) and TBGA64 (10 x 13mm, 1mm pitch)
packages.
In order to meet environmental requirements, Numonyx offers the M29W128FH and the
M29W128FL in ECOPACK® packages. ECOPACK packages are Lead-free. The category of
second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label.
The memories are supplied with all the bits erased (set to ’1’).
The M29W128FH and the M29W128FL will be referred to as M29W128F throughout the
document.
Table 1.
A0-A22
Signal names
Address Inputs
7/78
Summary description
Table 1.
M29W128FH, M29W128FL
Signal names
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A−1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply voltage
VPP/WP
VPP/Write Protect
VSS
Ground
NC
Not Connected Internally
Figure 1.
Logic diagram
VPP/WP
VCC
23
15
A0-A22
DQ0-DQ14
W
E
G
DQ15A-1
M29W128FH
M29W128FL
RB
RP
BYTE
VSS
AI11525
1. Also see Appendix A and Table 28 for a full listing of the Block Addresses.
8/78
M29W128FH, M29W128FL
Figure 2.
Summary description
TSOP connections
NC
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
W
RP
A21
VPP/WP
RB
A18
A17
A7
A6
A5
A4
A3
A2
A1
NC
NC
1
56
14
43
M29W128FH
15 M29W128FL 42
28
29
NC
NC
A16
BYTE
VSS
DQ15A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
NC
VCC
AI11526
9/78
Summary description
Figure 3.
M29W128FH, M29W128FL
TBGA connections (top view through package)
6
7
8
W
A9
A13
NC
VPP/WP
RP
A8
A12
A22
A6
A18
A21
A10
A14
NC
A1
A5
A20
A19
A11
A15
VCC
A0
DQ0
DQ2
DQ5
DQ7
A16
VSS
E
DQ8
DQ10
DQ12
DQ14
BYTE
NC
G
DQ9
DQ11
VCC
DQ13
DQ15
A-1
NC
VSS
DQ1
DQ3
DQ4
DQ6
VSS
NC
1
2
3
4
5
A
NC
A3
A7
RB
B
NC
A4
A17
C
NC
A2
D
NC
E
NC
F
VCC
G
NC
H
NC
AI11527
10/78
M29W128FH, M29W128FL
Figure 4.
Summary description
Block addresses
(x16)
Address lines A22-A0
(x8)
Address lines A22-A0, DQ15A-1
FFFFFFh
7FFFFFh
32 KWords
64 KBytes
FF0000h
7F8000h
Total of 256
Uniform Blocks
00FFFFh
01FFFFh
64 KBytes
010000h
32 KWords
008000h
00FFFFh
007FFFh
64 KBytes
000000h
32 KWords
000000h
AI11528
11/78
Signal descriptions
2
M29W128FH, M29W128FL
Signal descriptions
See Figure 1: Logic diagram, and Table 1: Signal names, for a brief overview of the signals
connected to this device.
2.1
Address Inputs (A0-A22)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the Program/Erase Controller.
2.2
Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the internal state machine.
2.3
Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4
Data Input/Output or Address Input (DQ15A−1)
When the device is in x16 Bus mode, this pin behaves as a Data Input/Output pin (as DQ8DQ14). When the device is in x8 Bus mode, this pin behaves as an address pin; DQ15A−1
Low will select the LSB of the addressed Word, DQ15A−1 High will select the MSB.
Throughout the text consider references to the Data Input/Output to include this pin when
the device operates in x16 bus mode and references to the Address Inputs to include this
pin when the device operates in x8 bus mode except when stated explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable pin, E, activates the memory, allowing Bus Read and Bus Write operations
to be performed. When Chip Enable is High, VIH, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable pin, G, controls the Bus Read operation of the memory.
12/78
M29W128FH, M29W128FL
2.7
Signal descriptions
Write Enable (W)
The Write Enable pin, W, controls the Bus Write operation of the memory’s Command
Interface.
2.8
VPP/Write Protect (VPP/WP)
The VPP/Write Protect pin provides two functions. The VPP function allows the memory to
use an external high voltage power supply to reduce the time required for Program
operations. This is achieved by bypassing the unlock cycles and/or using the multiple Word
(2 or 4 at-a-time) or multiple Byte Program (2, 4 or 8 at-a-time) commands.
The Write Protect function provides a hardware method of protecting the highest or lowest
block. When VPP/Write Protect is Low, VIL, the highest or lowest block is protected; Program
and Erase operations on this block are ignored while VPP/Write Protect is Low, even when
RP is at VID.
When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status
of the highest or lowest block. Program and Erase operations can now modify the data in
this block unless the block is protected using Block Protection.
Applying VPPH to the VPP/WP pin will temporarily unprotect any block previously protected
(including the highest or lowest block) using a High Voltage Block Protection technique (InSystem or Programmer technique). See Table 8: Hardware Protection for details.
When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock
Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes.
During Unlock Bypass Program operations the memory draws IPP from the pin to supply the
programming circuits. See the description of the Unlock Bypass command in the Command
Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than
tVHVPP (see Figure 15: Accelerated Program Timing waveforms).
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
The VPP/Write Protect pin must not be left floating or unconnected or the device may
become unreliable. A 0.1µF capacitor should be connected between the VPP/Write Protect
pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB
track widths must be sufficient to carry the currents required during Unlock Bypass Program,
IPP.
13/78
Signal descriptions
2.9
M29W128FH, M29W128FL
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all the blocks previously protected using a High Voltage
Block Protection technique (In-System or Programmer technique). Note that if VPP/WP is at
VIL, then the highest or lowest block will remain protected even if RP is at VID.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.
See Section 2.10: Ready/Busy Output (RB), Table 24: Reset/Block Temporary Unprotect AC
characteristics and Figure 13 and Figure 14 for more details.
Holding RP at VID will temporarily unprotect all the blocks previously protected using a High
Voltage Block Protection technique. Program and erase operations on all blocks will be
possible. The transition from VIH to VID must be slower than tPHPHH.
2.10
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or erase operation. During Program or erase operations Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and
Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table 24: Reset/Block Temporary Unprotect AC
characteristics and Figure 13 and Figure 14.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11
Byte/Word Organization Select (BYTE)
It is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word
Organization Select is Low, VIL, the memory is in x8 mode, when it is High, VIH, the memory
is in x16 mode.
2.12
VCC supply voltage (2.7V to 3.6V)
VCC provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout
Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during program and erase operations, Icc2.
14/78
M29W128FH, M29W128FL
2.13
Signal descriptions
Vss ground
VSS is the reference for all voltage measurements. The device features two VSS pins both of
which must be connected to the system ground.
15/78
Bus operations
3
M29W128FH, M29W128FL
Bus operations
There are five standard bus operations that control the device. These are Bus Read
(Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby.
See Table 2 and Table 5, Bus Operations, for a summary. Typically glitches of less than 5ns
on Chip Enable, Write Enable, and Reset/Block Temporary Unprotect pins are ignored by
the memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. To speed up the read operation the memory array can be read in Page mode
where data is internally read and stored in a page buffer. The Page has a size of 8 Words (or
16 Bytes) and is addressed by the address inputs A2-A0 in x16 mode and A2-DQ15A−1 in
Byte mode.
A valid Bus Read operation involves setting the desired address on the Address Inputs,
applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write Enable
High, VIH. The Data Inputs/Outputs will output the value, see Figure 9: Random Read AC
waveforms, Figure 10: Page Read AC waveforms (Word mode), and Table 21: Read AC
characteristics, for details of when the output becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,
during the whole Bus Write operation. See Figure 11 and Figure 12, Write AC Waveforms,
and Table 22 and Table 23, Write AC Characteristics, for details of the timing requirements.
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4
Standby
When Chip Enable is High, VIH, the memory enters Standby mode and the Data
Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to
the Standby Supply Current, ICC2, Chip Enable should be held within VCC ± 0.3V. For the
Standby current level see Table 20: DC characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC3, for Program or Erase operations until the operation completes.
16/78
M29W128FH, M29W128FL
3.5
Bus operations
Automatic Standby
If CMOS levels (VCC ± 0.3V) are used to drive the bus and the bus is inactive for tAVQV+
30ns or more the memory enters Automatic Standby where the internal Supply Current is
reduced to the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if
a Bus Read operation is in progress.
3.6
Special Bus operations
Additional bus operations can be performed to read the Electronic Signature, verify the
Protection Status of the Extended Memory Block, and apply and remove Block Protection.
These bus operations are intended for use by programming equipment and are not usually
used in applications. They require VID to be applied to some pins.
3.6.1
Read Electronic Signature
The memory has two codes, the Manufacturer code and the Device code used to identify
the memory. These codes can accessed by performing read operations with control signals
and addresses set as shown in Table 3 and Table 5.
These codes can also be accessed by issuing an Auto Select command (see Section 5.1.2:
Auto Select command).
3.6.2
Verify Extended Memory Block Protection Indicator
The Extended Memory Block is either Factory Locked or Customer Lockable.
The Protection Status of the Extended Memory Block (Factory Locked or Customer
Lockable) can be accessed by reading the Extended Memory Block Protection Indicator.
This is performed by applying the signals as shown in Table 4 and Table 7. The Protection
Status of the Extended Memory Block is then output on bit DQ7 of the Data Input/Outputs.
(see Table 2 and Table 5, Bus Operations).
The Protection Status of the Extended Memory Block can also be accessed by issuing an
Auto Select command (see Section 5.1.2: Auto Select command).
3.6.3
Verify Block Protection Status
The Protection Status of a Block can be directly accessed by performing a read operation
with control signals and addresses set as shown in Table 4 and Table 7.
If the Block is protected, then 01h (in x8 mode) is output on Data Input/Outputs DQ0-DQ7,
otherwise 00h is output.
3.6.4
Hardware Block Protect
The VPP/WP pin can be used to protect the highest or lowest block. When VPP/WP is at VIL
the highest or lowest block is protected and remains protected regardless of the Block
Protection Status or the Reset/Block Temporary Unprotect pin state.
17/78
Bus operations
3.6.5
M29W128FH, M29W128FL
Temporary Unprotect of high voltage Protected Blocks
The RP pin can be used to temporarily unprotect all the blocks previously protected using the In-System
or the Programmer protection technique (High Voltage techniques).
Refer to Section 2.9: Reset/Block Temporary Unprotect (RP).
Table 2.
Bus operations, 8-bit mode
Operation(1)
Address Inputs
E
G
W
RP
Data Inputs/Outputs
VPP/WP
A22-A0, DQ15A-1
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
VIH
VIH
VIH
Cell Address
Hi-Z
Data Output
Bus Write
VIL
VIH
VIL
VIH
VIH
Command Address
Hi-Z
Data Input
X
VIH
VIH
VIH
VIH
X
Hi-Z
Hi-Z
VIH
X
X
VIH
VIH
X
Hi-Z
Hi-Z
Output Disable
Standby
1. X = VIL or VIH.
Table 3.
Read Electronic Signature, 8-bit mode
Address Inputs
Read
Cycle(1)
Data Inputs/Outputs
E G W
A22-A10 A9 A8-A7 A6 A5-A4 A3 A2 A1 A0 DQ15A-1
DQ14DQ8
DQ7-DQ0
20h
Manufacturer
Code
VIL VIL VIL VIL
X
Hi-Z
Device Code
(Cycle 1)
VIL VIL VIL VIH
X
Hi-Z 7Eh (Both Devices)
VIH VIH VIH VIL
X
Hi-Z 12h (Both Devices)
VIH VIH VIH VIH
X
Hi-Z
Device Code
(Cycle 2)
VIL VIL VIH
Device Code
(Cycle 3)
1. X = VIL or VIH.
18/78
X
VID
X
VIL
X
8Ah (M29W128FH)
8Bh (M29W128FL)
M29W128FH, M29W128FL
Table 4.
Operation
(1)
Verify
Extended
Memory
Block
Protection
Indicator
(bit DQ7)
Bus operations
Block Protection, 8-bit mode
E
G
Address Inputs
Data Inputs/Outputs
VPP/
W RP
A8A5- A3DQ15 DQ14
WP A22- A11A9
A6
A1 A0
DQ7-DQ0
A12 A10
A7
A4 A2
A-1 -DQ8
M29W128FH
88h (factory
locked)
08h (customer
lockable)
VIH
VIL VIL VIH VIH VIH
BA
X
VID
X
VIL
X
VIL VIH
X
Hi-Z
Verify Block
Protection
Status
Temporary
Block
Unprotect
VIL
X
X
X VID
X
Valid
M29W128FL
98h (factory
locked)
18h (customer
lockable)
01h
(protected)
00h
(unprotected)
Data Input
(2)
1. X = VIL or VIH. BA any Address in the Block.
2. The RP pin unprotects all the blocks that have been previously protected using a High Voltage protection Technique.
Table 5.
Bus operations, 16-bit mode
Operation(1)
E
G
W
RP
VPP/
WP
Address Inputs
Data Inputs/Outputs
A22-A0
DQ15A-1, DQ14-DQ0
Bus Read
VIL
VIL
VIH
VIH
VIH
Cell Address
Data Output
Bus Write
VIL
VIH
VIL
VIH
VIH
Command Address
Data Input
VIH VIH
VIH
VIH
X
Hi-Z
VIH
VIH
X
Hi-Z
Output Disable
Standby
X
VIH
X
X
1. X = VIL or VIH.
19/78
Bus operations
Table 6.
M29W128FH, M29W128FL
Read Electronic Signature, 16-bit mode
Address Inputs
(1)
Read Cycle
E
G
W
A22A8A9
A10
A7
A6
A5A4
Data Inputs/Outputs
A3
A2
A1
A0
DQ15A-1, DQ14-DQ0
Manufacturer
Code
VIL
VIL
VIL
VIL
0020h
Device Code
(Cycle 1)
VIL
VIL
VIL
VIH
227Eh
(Both Devices)
VIH
VIH
VIH
VIL
2212h
(Both Devices)
VIH
VIH
VIH
VIH
228Ah (M29W128FH)
228Bh (M29W128FL)
VIL VIL VIH
Device Code
(Cycle 2)
X
VID
X
VIL
X
Device Code
(Cycle 3)
1. X = VIL or VIH.
Table 7.
Block Protection, 16-bit mode
Operation(1)
E
G
W
Address Inputs
VPP/
RP
A8A5- A3WP A22- A11A9
A6
A1 A0
A12 A10
A7
A4 A2
Verify
Extended
Memory Block
Indicator
VIL VIL VIH VIH VIH
(bit DQ7)
VIH
BA
X
VID
X
VIL
X
VIL VIH
VIL
X
X
X
VID
DQ15A-1,
DQ14-DQ0
M29W128FH
0088h
(factory locked)
0008h
(customer lockable)
Verify Block
Protection
Status
Temporary
Block
Unprotect (2)
Data Inputs/Outputs
X
Valid
M29W128FL
0098h
(factory locked)
0018h
(customer lockable)
0001h (protected)
0000h (unprotected)
Data Input
1. X = VIL or VIH. BA Any Address in the Block.
2. The RP pin unprotects all the blocks that have been previously protected using a High Voltage protection Technique.
20/78
M29W128FH, M29W128FL
4
Hardware protection
Hardware protection
The M29W128F features hardware protection/unprotection. Refer to Table 8 for details on
hardware block protection/unprotection using VPP/WP and RP pins.
4.1
Write Protect
The VPP/WP pin protects the highest or lowest block (refer to Section 2: Signal descriptions
for a detailed description of the signals).
4.2
Temporary Block Unprotect
When held at VID, the Reset/Block Temporary Unprotect pin, RP, will temporarily unprotect
all the blocks previously protected using a High Voltage Block Protection technique.
Table 8.
Hardware Protection
VPP/WP
RP
Function
VIH
Highest or lowest block protected from Program/Erase
operations
VID
All blocks temporarily unprotected except the highest or
lowest block
VIH or VID
VID
All blocks temporarily unprotected
VPPH
VIH or VID
All blocks temporarily unprotected
VIL
21/78
Command interface
5
M29W128FH, M29W128FL
Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16bit or 8-bit mode.
5.1
Standard commands
See either Table 9, or Table 10, depending on the configuration that is being used, for a
summary of the Standard commands.
5.1.1
Read/Reset command
The Read/Reset command returns the memory to Read mode. It also resets the errors in
the Status Register. Either one or three Bus Write operations can be used to issue the
Read/Reset command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to Read mode. If the Read/Reset command
is issued during the time-out of a Block erase operation, the memory will take up to 10µs to
abort. During the abort period no valid data can be read from the memory.
The Read/Reset command will not abort an Erase operation when issued while in Erase
Suspend.
5.1.2
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code, the
Protection Status of each block (Block Protection Status) and the Extended Memory Block
Protection Indicator.
Three consecutive Bus Write operations are required to issue the Auto Select command.
Once the Auto Select command is issued Bus Read operations to specific addresses output
the Manufacturer Code, the Device Code, the Extended Memory Block Protection Indicator
and a Block Protection Status (see Table 9 and Table 10 in conjunction with Table 3, Table 4,
Table 6 and Table 7). The memory remains in Auto Select mode until a Read/Reset or CFI
Query command is issued.
5.1.3
Read CFI Query command
The Read CFI Query Command is used to put the memory in Read CFI Query mode. Once
in Read CFI Query mode, Bus Read operations to the memory will output data from the
Common Flash Interface (CFI) Memory Area. One Bus Write cycle is required to issue the
Read CFI Query Command. This command is valid only when the device is in the Read
Array or Auto Select mode.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Auto Select mode). A second Read/Reset command is required to put
the device in Read Array mode from Auto Select mode.
22/78
M29W128FH, M29W128FL
Command interface
See Appendix B, Table 29, Table 30, Table 31, Table 32, Table 33 and Table 34 for details on
the information contained in the Common Flash Interface (CFI) memory area.
5.1.4
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations
are required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected, then these are ignored and all the other blocks are erased. If all
of the blocks are protected the Chip Erase operation appears to start but will terminate
within about 100µs, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands, including the Erase
Suspend command. It is not possible to issue any command to abort the operation. Typical
chip erase times are given in Table 15. All Bus Read operations during the Chip Erase
operation will output the Status Register on the Data Inputs/Outputs. See the section on the
Status Register for more details.
After the Chip Erase operation has completed the memory will return to the Read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
5.1.5
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. It sets all of
the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is
lost.
Six Bus Write operations are required to select the first block in the list. Each additional
block in the list can be selected by repeating the sixth Bus Write operation using the address
of the additional block. The Block Erase operation starts the Program/Erase Controller after
a time-out period of 50µs after the last Bus Write operation. Once the Program/Erase
Controller starts it is not possible to select any more blocks. Each additional block must
therefore be selected within 50µs of the last block. The 50µs timer restarts when an
additional block is selected. After the sixth Bus Write operation, a Bus Read operation
outputs the Status Register. See Section 6: Status register for details on how to identify if
the Program/Erase Controller has started the Block Erase operation.
After the Block Erase operation has completed, the memory returns to the Read mode,
unless an error has occurred. When an error occurs, Bus Read operations will continue to
output the Status Register. A Read/Reset command must be issued to reset the error
condition and return to Read mode.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the Block Erase operation appears to
start but will terminate within about 100µs, leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command and the Read/Reset command which is only accepted during the 50µs
time-out period. Typical block erase times are given in Table 15.
23/78
Command interface
5.1.6
M29W128FH, M29W128FL
Erase Suspend command
The Erase Suspend command may be used to temporarily suspend a Block or multiple
Block Erase operation. One Bus Write operation is required to issue the command. Issuing
the Erase Suspend command returns the whole device to Read mode.
The Program/Erase Controller will suspend within the Erase Suspend Latency time (see
Table 15: Program, Erase Times and Program, Erase Endurance cycles) of the Erase
Suspend Command being issued. Once the Program/Erase Controller has stopped the
memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend
command is issued during the period when the memory is waiting for an additional block
(before the Program/Erase Controller starts) then the Erase is suspended immediately and
will start immediately when the Erase Resume Command is issued. It is not possible to
select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
During Erase Suspend a Bus Read operation to the Extended Memory Block will output the
Extended Memory Block data. Once in the Extended Block mode, the Exit Extended Block
command must be issued before the erase operation can be resumed.
5.1.7
Erase Resume command
The Erase Resume command is used to restart the Program/Erase Controller after an
Erase Suspend.
The device must be in Read Array mode before the Resume command will be accepted. An
Erase can be suspended and resumed more than once.
5.1.8
Program Suspend command
The Program Suspend command allows the system to interrupt a program operation so that
data can be read from any block. When the Program Suspend command is issued during a
program operation, the device suspends the program operation within the Program Suspend
Latency time (see Table 15: Program, Erase Times and Program, Erase Endurance cycles)
and updates the Status Register bits.
After the program operation has been suspended, the system can read array data from any
address. However, data read from Program-Suspended addresses is not valid.
The Program Suspend command may also be issued during a program operation while an
erase is suspended. In this case, data may be read from any addresses not in Erase
Suspend or Program Suspend. If a read is needed from the Extended Memory Block area
(One-time Program area), the user must use the proper command sequences to enter and
exit this region.
The system may also issue the Auto Select command sequence when the device is in the
Program Suspend mode. The system can read as many Auto Select codes as required.
24/78
M29W128FH, M29W128FL
Command interface
When the device exits the Auto Select mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See Auto Select command sequence for
more information.
5.1.9
Program Resume command
After the Program Resume command is issued, the device reverts to programming. The
controller can determine the status of the program operation using the DQ7 or DQ6 status
bits, just as in the standard program operation. Refer to Section 6: Status register for details.
The system must issue a Program Resume command, to exit the Program Suspend mode
and to continue the programming operation.
Further issuing of the Resume command is ignored. Another Program Suspend command
can be written after the device has resumed programming.
5.1.10
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final Write operation latches
the address and data in the internal state machine and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend
command and a Program Resume command, respectively (see Section 5.1.8: Program
Suspend command and Section 5.1.9: Program Resume command).
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
After programming has started, Bus Read operations output the Status Register content.
See Section 6: Status register for more details. Typical program times are given in Table 15:
Program, Erase Times and Program, Erase Endurance cycles.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs, Bus Read operations to the memory continue
to output the Status Register. A Read/Reset command must be issued to reset the error
condition and return to Read mode.
One of the Erase Commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
25/78
Command interface
Table 9.
M29W128FH, M29W128FL
Standard commands, 8-bit mode
Command
Length
Bus operations(1)(2)
1st
Add
2nd
Data Add Data
3rd
Add
4th
5th
6th
Data Add Data Add Data Add Data
1
X
F0
3
AAA
AA
555
55
X
F0
3
AAA
AA
555
55
AAA
90
(3)
(3)
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6
+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase/Program Suspend
1
X
B0
Erase/Program Resume
1
X
30
Read CFI Query
1
AA
98
Read/Reset
Manufacturer Code
Device Code
Auto
Select
Extended Memory
Block Protection
Indicator
Block Protection
Status
1. Grey cells represent Read cycles. The other cells are Write cycles.
2. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal.
3. The Auto Select addresses and data are given in Table 3: Read Electronic Signature, 8-bit mode, and Table 4: Block
Protection, 8-bit mode, except for A9 that is ‘Don’t Care’.
26/78
M29W128FH, M29W128FL
Table 10.
Command interface
Standard commands, 16-bit mode
Command
Length
Bus operations(1)(2)
1st
Add
2nd
Data Add Data
3rd
Add
4th
5th
6th
Data Add Data Add Data Add Data
1
X
F0
3
555
AA
2AA
55
X
F0
3
555
AA
2AA
55
555
90
(3)
(3)
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Erase/Program Suspend
1
X
B0
Erase/Program Resume
1
X
30
Read CFI Query
1
55
98
Read/Reset
Manufacturer Code
Device Code
Extended Memory
Auto
Select Block Protection
Indicator
Block Protection
Status
1. Gray cells represent Read cycles. The other cells are Write cycles.
2. X Don’t Care, PA Program Address, PD Program Data, BA any address in the Block. All values in the table are in
hexadecimal.
3. The Auto Select addresses and data are given in Table 6: Read Electronic Signature, 16-bit mode, and Table 7: Block
Protection, 16-bit mode, except for A9 that is ‘Don’t Care’.
27/78
Command interface
5.2
M29W128FH, M29W128FL
Fast Program commands
The M29W128F offers a set of Fast Program commands to improve the programming
throughput:
●
Write to Buffer and Program
●
Double and Quadruple Word, Program
●
Double, Quadruple and Octuple Byte Program
●
Unlock Bypass.
See either Table 12, or Table 11, depending on the configuration that is being used, for a
summary of the Fast Program commands.
When VPPH is applied to the VPP/Write Protect pin the memory automatically enters the Fast
Program mode. The user can then choose to issue any of the Fast Program commands.
Care must be taken because applying a VPPH to the VPP/WP pin will temporarily unprotect
any protected block.
After programming has started, Bus Read operations in the memory output the Status
Register content. Fast program commands can be suspended and then resumed by issuing
a Program Suspend command and a Program Resume command, respectively (see
Section 5.1.8: Program Suspend command and Section 5.1.9: Program Resume command)
After the fast program operation has completed, the memory will return to the Read mode,
unless an error has occurred. When an error occurs Bus Read operations to the memory
will continue to output the Status Register. A Read/Reset command must be issued to reset
the error condition and return to Read mode. One of the Erase Commands must be used to
set all the bits in a block or in the whole memory from ’0’ to ’1’.
Typical Program times are given in Table 15: Program, Erase Times and Program, Erase
Endurance cycles.
5.2.1
Write to Buffer and Program command
The Write to Buffer and Program Command makes use of the device’s 64-Byte Write Buffer
to speed up programming. 32 Words/64 Bytes can be loaded into the Write Buffer. Each
Write Buffer has the same A22-A5 addresses.The Write to Buffer and Program command
dramatically reduces system programming time compared to the standard non-buffered
Program command.
When issuing a Write to Buffer and Program command, the VPP/WP pin can be either held
High, VIH or raised to VPPH.
See Table 15 for details on typical Write to Buffer and Program times in both cases.
Five successive steps are required to issue the Write to Buffer and Program command:
28/78
1.
The Write to Buffer and Program command starts with two unlock cycles.
2.
The third Bus Write cycle sets up the Write to Buffer and Program command. The setup
code can be addressed to any location within the targeted block.
3.
The fourth Bus Write cycle sets up the number of Words/Bytes to be programmed.
Value N is written to the same block address, where N+1 is the number of Words/Bytes
to be programmed. N+1 must not exceed the size of the Write Buffer or the operation
will abort.
4.
The fifth cycle loads the first address and data to be programmed.
M29W128FH, M29W128FL
Command interface
Use N Bus Write cycles to load the address and data for each Word/Byte into the Write
Buffer. Addresses must lie within the range from the start address+1 to the start address +
N-1. Optimum performance is obtained when the start address corresponds to a 64 Byte
boundary. If the start address is not aligned to a 64 Byte boundary, the total programming
time is doubled.
All the addresses used in the Write to Buffer and Program operation must lie within the
same page.
To program the content of the Write Buffer, this command must be followed by a Write to
Buffer and Program Confirm command.
If an address is written several times during a Write to Buffer and Program operation, the
address/data counter will be decremented at each data load operation and the data will be
programmed to the last word loaded into the Buffer.
Invalid address combinations or failing to follow the correct sequence of Bus Write cycles
will abort the Write to Buffer and Program.
The Status Register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status
during a Write to Buffer and Program operation.
If is not possible to detect Program operation fails when changing programmed data from ‘0’
to ‘1’, that is when reprogramming data in a portion of memory already programmed. The
resulting data will be the logical OR between the previous value and the current value.
A Write to Buffer and Program Abort and Reset command must be issued to abort the Write
to Buffer and Program operation and reset the device in Read mode.
See Appendix E, Figure 22: Write to Buffer and Program flowchart and Pseudo Code, for a
suggested flowchart on using the Write to Buffer and Program command.
5.2.2
Write to Buffer and Program Confirm command
The Write to Buffer and Program Confirm command is used to confirm a Write to Buffer and
Program command and to program the N+1 Words/Bytes loaded in the Write Buffer by this
command.
5.2.3
Write to Buffer and Program Abort and Reset command
The Write to Buffer and Program Abort and Reset command is used to abort Write to Buffer
and Program command.
5.2.4
Double Word Program command
This is used to write two adjacent Words in x16 mode, simultaneously. The addresses of the
two Words must differ only in A0.
Three bus write cycles are necessary to issue the command:
1.
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Word to be written.
3.
The third bus cycle latches the Address and the Data of the second Word to be written
and starts the Program/Erase Controller.
29/78
Command interface
5.2.5
M29W128FH, M29W128FL
Quadruple Word Program command
This is used to write a page of four adjacent Words (or 8 adjacent Bytes), in x16 mode,
simultaneously. The addresses of the four Words must differ only in A1 and A0.
Five bus write cycles are necessary to issue the command:
1.
5.2.6
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Word to be written.
3.
The third bus cycle latches the Address and the Data of the second Word to be written.
4.
The fourth bus cycle latches the Address and the Data of the third Word to be written.
5.
The fifth bus cycle latches the Address and the Data of the fourth Word to be written
and starts the Program/Erase Controller.
Double Byte Program command
This is used to write two adjacent Bytes in x8 mode, simultaneously. The addresses of the
two Bytes must differ only in DQ15A-1.
Three bus write cycles are necessary to issue the command:
6.
5.2.7
The first bus cycle sets up the command.
7.
The second bus cycle latches the Address and the Data of the first Byte to be written.
8.
The third bus cycle latches the Address and the Data of the second Byte to be written
and starts the Program/Erase Controller.
Quadruple Byte Program command
This is used to write four adjacent Bytes in x8 mode, simultaneously. The addresses of the
four Bytes must differ only in A0, DQ15A-1.
Five bus write cycles are necessary to issue the command.
30/78
1.
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Byte to be written.
3.
The third bus cycle latches the Address and the Data of the second Byte to be written.
4.
The fourth bus cycle latches the Address and the Data of the third Byte to be written.
5.
The fifth bus cycle latches the Address and the Data of the fourth Byte to be written and
starts the Program/Erase Controller.
M29W128FH, M29W128FL
5.2.8
Command interface
Octuple Byte Program command
This is used to write eight adjacent Bytes, in x8 mode, simultaneously. The addresses of the
eight Bytes must differ only in A1, A0 and DQ15A-1.
Nine bus write cycles are necessary to issue the command:
1.
5.2.9
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Byte to be written.
3.
The third bus cycle latches the Address and the Data of the second Byte to be written.
4.
The fourth bus cycle latches the Address and the Data of the third Byte to be written.
5.
The fifth bus cycle latches the Address and the Data of the fourth Byte to be written.
6.
The sixth bus cycle latches the Address and the Data of the fifth Byte to be written.
7.
The seventh bus cycle latches the Address and the Data of the sixth Byte to be written.
8.
The eighth bus cycle latches the Address and the Data of the seventh Byte to be
written.
9.
The ninth bus cycle latches the Address and the Data of the eighth Byte to be written
and starts the Program/Erase Controller.
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory faster than with the standard program commands. When
the cycle time to the device is long, considerable time saving can be made by using these
commands. Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued, the memory enters Unlock Bypass
mode. When in Unlock Bypass mode, only the Unlock Bypass Program and Unlock Bypass
Reset commands are valid. The Unlock Bypass Program command can then be issued to
program addresses within the memory, or the Unlock Bypass Reset command can be
issued to return the memory to Read mode. In Unlock Bypass mode the memory can be
read as if in Read mode.
5.2.10
Unlock Bypass Program command
The Unlock Bypass Program command can be used to program one address in the memory
array at a time. The command requires two Bus Write operations, the final write operation
latches the address and data and starts the Program/Erase Controller.
The Program operation using the Unlock Bypass Program command behaves identically to
the Program operation using the Program command. The operation cannot be aborted, a
Bus Read operation to the memory outputs the Status Register. See the Program command
for details on the behavior.
5.2.11
Unlock Bypass Reset command
The Unlock Bypass Reset command can be used to return to Read/Reset mode from
Unlock Bypass mode. Two Bus Write operations are required to issue the Unlock Bypass
Reset command. Read/Reset command does not exit from Unlock Bypass mode.
31/78
Command interface
Table 11.
M29W128FH, M29W128FL
Fast Program commands, 8-bit mode
Command
Length
Bus Write operations(1)
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
BA
N(2)
PA(3)
PD
Write to
Buffer and
Program
N
+5
AAA
AA
555
55
BA
25
Write to
Buffer and
Program
Abort and
Reset
3
AAA
AA
555
55
AAA
F0
Write to
Buffer and
Program
Confirm
1
BA(5)
29
Double Byte
Program
3
AAA
50
PA0
PD0
PA1
PD1
Quadruple
Byte
Program
5
AAA
56
PA0
PD0
PA1
PD1
PA2
PD2
PA3
PD3
Octuple
Byte
Program
9
AAA
8B
PA0
PD0
PA1
PD1
PA2
PD2
PA3
PD3
Unlock
Bypass
3
AAA
AA
555
55
AAA
20
Unlock
Bypass
Program
2
X
A0
PA
PD
Unlock
Bypass
Reset
2
X
90
X
00
Add
WBL
7th
Data
(4)
PD
PA4
PD4
8th
9th
Add
Data
Add
Data
Add
Data
PA5
PD5
PA6
PD6
PA7
PD7
1.
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, WBL Write Buffer Location. All values in the table are
in hexadecimal.
2.
The maximum number of cycles in the command sequence is 68. N+1 is the number of Bytes to be programmed during the Write to Buffer
and Program operation.
3.
Each buffer has the same A22-A5 addresses. A0-A4 and A-1 are used to select a Byte within the N+1 Byte page.
4.
The 6th cycle has to be issued N time. WBL scans the Word inside the page.
5.
BA must be identical to the address loaded during the Write to buffer and Program 3rd and 4th cycles.
32/78
M29W128FH, M29W128FL
Table 12.
Command interface
Fast Program commands, 16-bit mode
Command
Length
Bus Write operations(1)
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
N+
5
555
AA
2AA
55
BA
25
BA
N(2)
PA(3)
PD
Write to Buffer and Program Abort and
Reset
3
555
AA
2AA
55
555
F0
Write to Buffer and Program Confirm
1
BA(5)
29
Double Word Program
3
555
50
PA0
PD0
PA1
PD1
Quadruple Word Program
5
555
56
PA0
PD0
PA1
PD1
PA2
PD2
PA3
PD3
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Write to Buffer and Program
Add
Data
WBL
PD
(4)
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, WBL Write Buffer Location. All values
in the table are in hexadecimal.
2. The maximum number of cycles in the command sequence is 36. N+1 is the number of Words to be programmed during
the Write to Buffer and Program operation.
3. Each buffer has the same A22-A5 addresses. A0-A4 are used to select a Word within the N+1 Word page.
4. The 6th cycle has to be issued N time. WBL scans the Word inside the page.
5. BA must be identical to the address loaded during the Write to buffer and Program 3rd and 4th cycles.
33/78
Command interface
5.3
M29W128FH, M29W128FL
Extended Memory Block Protection commands
The M29W128F offers a set of commands to access the Extended Memory Block and to
configure and check its protection mode.
The commands related to the Extended Memory Block Protection are available in both 8 bit
and 16 bit memory configuration.
5.3.1
Enter Extended Memory Block command
The M29W128F has one extra 128 Word block (Extended Memory Block) that can only be
accessed using the Enter Extended Memory Block command.
Three Bus Write cycles are required to issue the Extended Memory Block command. Once
the command has been issued the device enters the Extended Memory Block mode where
all Bus Read or Program operations are conducted on the Extended Memory Block. Once
the device is in the Extended Block mode, the Extended Memory Block is addressed by
using the addresses occupied by block 0 in the other operating modes (see Table 28: Block
Addresses and Protection Groups).
The device remains in Extended Block mode until the Exit Extended Block command is
issued or power is removed from the device. After power-up or a hardware reset, the device
reverts to the Read mode where commands issued to block 0 address space will address
block 0.
Note that when the device is in the Extended Block mode, the VPP/WP pin cannot be used
for fast programming and the Unlock Bypass mode is not available.
The Extended Memory Block cannot be erased, and can be treated as one-time
programmable (OTP) memory.
In Extended Block mode, Erase, Chip Erase, Erase Suspend and Erase resume commands
are not allowed.
To exit from the Extended Block mode the Exit Extended Block command must be issued.
The Extended Memory Block can be protected by setting the Extended Memory Block
Protection Bit to ‘1’; however once protected the protection cannot be undone.
5.3.2
Exit Extended Block command
The Exit Extended Block command is used to exit from the Extended Block mode and return
the device to Read mode. Four Bus Write operations are required to issue the command.
34/78
M29W128FH, M29W128FL
Table 13.
Command interface
Extended Block Protection commands, 8-bit mode
Length
Bus operations(1)(2)
Command
1st
2nd
3rd
Add Data Add Data
Add
4th
5th
Data Add Data Add
Enter Extended Block
3
AAA
AA
555
55
AAA
88
Exit Extended Block
4
AAA
AA
555
55
AAA
90
X
6th
Data Add Data
00
1. X Don’t Care. All values in the table are in hexadecimal.
2. Grey cells represent Read cycles. The other cells are Write cycles.
Table 14.
Block Protection commands, 16-bit mode
Command
Length
Bus operations(1)(2)(3)
1st
2nd
3rd
Add Data Add Data Add Data
Enter Extended
Block
3
555
AA
2AA
55
555
88
Exit Extended Block 4
555
AA
2AA
55
555
90
4th
Add
X
5th
6th
Data Add Data Add
7th
Data Add Data
00
1. Grey cells represent Read cycles. The other cells are Write cycles.
2. X Don’t Care. All values in the table are in hexadecimal.
3. During Command cycles, if the lower address bits are 555h or 2AAh then the address bits higher than A11 and data bits
higher than DQ7 are Don't Care.
35/78
Command interface
Table 15.
M29W128FH, M29W128FL
Program, Erase Times and Program, Erase Endurance cycles
Parameter
Min
Chip Erase
Block Erase (64 KBytes)
Typ (1)(2)
Max(2)
Unit
80
400(3)
s
0.8
Erase Suspend Latency Time
Single or Multiple Byte Program
(1, 2, 4 or 8 Bytes at-a-time)
Byte Program
Write to Buffer and Program
(64 Bytes at-a-time)
Write to Buffer and Program
(32 Words at-a-time)
6
s
50(4)
µs
µs
10
VPP/WP
=VPPH
90
VPP/WP=VIH
280
200(3)
µs
Single or Multiple Word Program
(1, 2 or 4 Words at-a-time)
Word Program
(4)
µs
10
VPP/WP=
VPPH
90
VPP/WP=VIH
280
200(3)
µs
80
400(3)
s
40
200(3)
s
20
100(3)
s
Chip Program (Octuple Byte or Quadruple Word)
10
50(3)
s
Program Suspend Latency Time
5
15
µs
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Chip Program (Quadruple Byte or Double Word)
Program/Erase Cycles (per Block)
Data Retention
100,000
cycles
20
years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
36/78
M29W128FH, M29W128FL
6
Status register
Status register
The M29W128F has one Status Register. The Status Register provides information on the
current or previous Program or Erase operations. The various bits convey information and
errors on the operation. Bus Read operations from any address within the memory, always
read the Status Register during Program and Erase operations. It is also read during Erase
Suspend when an address within a block being erased is accessed.
The bits in the Status Register are summarized in Table 16: Status register bits.
6.0.1
Data Polling Bit (DQ7)
The Data Polling Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Data
Polling Bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling Bit outputs the complement of the bit being
programmed to DQ7. After successful completion of the Program operation the memory
returns to Read mode and Bus Read operations from the address just programmed output
DQ7, not its complement.
During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state
of DQ7. After successful completion of the Erase operation the memory returns to Read
mode.
In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation
within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the
Program/Erase Controller has suspended the Erase operation.
Figure 5: Data Polling flowchart, gives an example of how to use the Data Polling Bit. A Valid
Address is the address being programmed or an address within the block being erased.
6.0.2
Toggle Bit (DQ6)
The Toggle Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle
Bit is output on DQ6 when the Status Register is read.
During a Program/Erase operation the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations at any address. After successful completion of the
operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block
being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has
suspended the Erase operation.
Figure 6: Toggle flowchart, gives an example of how to use the Data Toggle Bit.
37/78
Status register
6.0.3
M29W128FH, M29W128FL
Error Bit (DQ5)
The Error Bit can be used to identify errors detected by the Program/Erase Controller. The
Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the
correct data to the memory. If the Error Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit is output on DQ5 when the Status Register
is read.
Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to
do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
One of the Erase commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
6.0.4
Erase Timer Bit (DQ3)
The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation
during a Block Erase command. Once the Program/Erase Controller starts erasing the
Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit
is set to ’0’ and additional blocks to be erased may be written to the Command Interface.
The Erase Timer Bit is output on DQ3 when the Status Register is read.
6.0.5
Alternative Toggle Bit (DQ2)
The Alternative Toggle Bit can be used to monitor the Program/Erase controller during
Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is
read.
During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’,
etc., with successive Bus Read operations from addresses within the blocks being erased. A
protected block is treated the same as a block not being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with
successive Bus Read operations from addresses within the blocks being erased. Bus Read
operations to addresses within blocks not being erased will output the memory array data as
if in Read mode.
After an Erase operation that causes the Error Bit to be set, the Alternative Toggle Bit can be
used to identify which block or blocks have caused the error. The Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses
within blocks that have not erased correctly. The Alternative Toggle Bit does not change if
the addressed block has erased correctly.
6.0.6
Write to Buffer and Program Abort Bit (DQ1)
The Write to Buffer and Program Abort bit, DQ1, is set to ‘1’ when a Write to Buffer and
Program operation aborts. The Write to Buffer and Program Abort and Reset command
must be issued to return the device to Read mode (see Write to Buffer and Program in
COMMANDS section).
38/78
M29W128FH, M29W128FL
Table 16.
Status register
Status register bits(1)
Operation
DQ7
DQ6
DQ5
DQ3
DQ2
DQ1
RB
Program
DQ7
Toggle
0
–
–
0
0
Program During Erase Suspend
DQ7
Toggle
0
–
–
–
0
Write to Buffer and Program Abort
DQ7
Toggle
0
–
–
1
0
Program Error
DQ7
Toggle
1
–
–
–
Hi-Z
0
Toggle
0
1
Toggle
–
0
0
Toggle
0
0
Toggle
–
0
0
Toggle
0
0
No Toggle
–
0
0
Toggle
0
1
Toggle
–
0
0
Toggle
0
1
No Toggle
–
0
1
No Toggle
0
–
Toggle
–
Hi-Z
–
Hi-Z
Chip Erase
Block Erase before timeout
Block Erase
Erase Suspend
Data read as normal
0
Toggle
1
1
No Toggle
–
Hi-Z
0
Toggle
1
1
Toggle
–
Hi-Z
Erase Error
1. Unspecified data bits should be ignored.
Figure 5.
Data Polling flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
DATA
YES
NO
NO
DQ5 = 1
YES
READ DQ7
at VALID ADDRESS
DQ7
=
DATA
NO
FAIL
YES
PASS
AI07760
39/78
Status register
Figure 6.
M29W128FH, M29W128FL
Toggle flowchart
START
READ DQ6 at
Valid Address
READ
DQ5 & DQ6
at Valid Address
DQ6
=
TOGGLE
NO
YES
NO
DQ5
=1
YES
READ DQ6
TWICE
at Valid Address
DQ6
=
TOGGLE
NO
YES
FAIL
PASS
AI11530
40/78
M29W128FH, M29W128FL
7
Maximum rating
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Refer also to the Numonyx SURE
Program and other relevant quality documents.
Table 17.
Absolute maximum ratings
Symbol
Parameter
Min
Max
Unit
TBIAS
Temperature Under Bias
− 50
125
°C
TSTG
Storage Temperature
−65
150
°C
−0.6
VCC + 0.6
V
voltage(1)(2)
VIO
Input or Output
VCC
Supply voltage
−0.6
4
V
VID
Identification voltage
−0.6
13.5
V
Program voltage
−0.6
13.5
V
VPP(3)
1. Minimum voltage may undershoot to −2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to VCC + 2V during transition and for less than 20ns during transitions.
3. VPP must not remain at 12V for more than a total of 80hrs.
41/78
DC and AC parameters
8
M29W128FH, M29W128FL
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 18: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 18.
Operating and AC measurement conditions
M29W128FH, M29W128FL
Parameter
60
70
Min
Max
Min
Max
VCC supply voltage
2.7
3.6
2.7
3.6
V
Ambient Operating Temperature
−40
85
−40
85
°C
Load capacitance (CL)
30
Input Rise and Fall Times
Input and Output Timing Ref. voltages
Figure 7.
30
10
Input pulse voltages
ns
0 to VCC
0 to VCC
V
VCC/2
VCC/2
V
VCC
VCC
25kΩ
DEVICE
UNDER
TEST
CL
0.1µF
pF
10
AC measurement load circuit
VPP
25kΩ
0.1µF
CL includes JIG capacitance
AI05558
42/78
Unit
Μ 2 9 Ω 1 2 8 ΦΗ , Μ 2 9 Ω 1 2 8 ΦΛ
Figure 8.
DC and AC parameters
AC measurement I/O waveform
VCC
VCC/2
0V
AI05557
Device capacitance(1)
Table 19.
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Test condition
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
1. Sampled only, not 100% tested.
Table 20.
Symbol
DC characteristics
Parameter
Test condition
Min
Max
Unit
0V ≤VIN ≤VCC
±1
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤VOUT ≤VCC
±1
µA
ICC1
Supply Current (Read)
E = VIL, G = VIH,
f = 6MHz
10
mA
ICC2
Supply Current (Standby)
E = VCC ± 0.2V,
RP = VCC ± 0.2V
100
µA
VPP/WP =
VIL or VIH
20
mA
VPP/WP =
VPPH
20
mA
ICC3 (1)
Supply Current
(Program/Erase)
Program/Erase
Controller
active
VIL
Input Low voltage
−0.5
0.8
V
VIH
Input High voltage
0.7VCC
VCC + 0.3
V
11.5
12.5
V
VPPH
Voltage for VPP/WP
Program Acceleration
VCC = 2.7V ±10%
IPP
Current for VPP/WP
Program Acceleration
VCC = 2.7V ±10%
15
mA
VOL
Output Low voltage
IOL = 1.8mA
0.45
V
VOH
Output High voltage
IOH = −100µA
VID
Identification voltage
11.5
12.5
V
Program/Erase Lockout
Supply voltage
1.8
2.3
V
VLKO
VCC −0.4
V
1. Sampled only, not 100% tested.
43/78
DC and AC parameters
Figure 9.
M29W128FH, M29W128FL
Random Read AC waveforms
tAVAV
A0-A22/
A–1
VALID
tAVQV
tAXQX
E
tELQV
tEHQX
tELQX
tEHQZ
G
tGLQX
tGHQX
tGHQZ
tGLQV
DQ0-DQ7/
DQ8-DQ15
VALID
tBHQV
BYTE
tELBL/tELBH
tBLQZ
AI08970
44/78
DQ0-DQ15
G
E
tELQV
tAVQV
VALID
tGLQV
VALID
tAVQV1
VALID
A0-A2
VALID
VALID
A3-A22
A-1
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
tGHQZ
tGHQX
tEHQZ
VALID
VALID
AI08971c
tEHQX
M29W128FH, M29W128FL
DC and AC parameters
Figure 10. Page Read AC waveforms (Word mode)
45/78
DC and AC parameters
Table 21.
Symbol
M29W128FH, M29W128FL
Read AC characteristics
Alt
Parameter
Test condition
M29W128FH,
M29W128FL
60
70
Unit
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL,
G = VIL
Min
60
70
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL,
G = VIL
Max
60
70
ns
tAVQV1
tPAGE Address Valid to Output Valid (Page)
E = VIL,
G = VIL
Max
25
30
ns
tELQX(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
Min
0
0
ns
tELQV
tCE
Chip Enable Low to Output Valid
G = VIL
Max
60
70
ns
tGLQX(1)
tOLZ
Output Enable Low to Output Transition
E = VIL
Min
0
0
ns
tGLQV
tOE
Output Enable Low to Output Valid
E = VIL
Max
20
25
ns
tEHQZ(1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
Max
25
25
ns
tGHQZ(1)
tDF
Output Enable High to Output Hi-Z
E = VIL
Max
25
25
ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or Address
Transition to Output Transition
Min
0
0
ns
tELBL
tELBH
tELFL
Chip Enable to BYTE Low or High
tELFH
Max
5
5
ns
tBLQZ
tFLQZ BYTE Low to Output Hi-Z
Max
25
25
ns
tBHQV
tFHQV BYTE High to Output Valid
Max
30
30
ns
1. Sampled only, not 100% tested.
46/78
M29W128FH, M29W128FL
DC and AC parameters
Figure 11. Write AC waveforms, Write Enable Controlled
tAVAV
A0-A22/
A–1
VALID
tWLAX
tAVWL
tWHEH
E
tELWL
tWHGL
G
tGHWL
tWLWH
W
tWHWL
tDVWH
DQ0-DQ7/
DQ8-DQ15
tWHDX
VALID
VCC
tVCHEL
RB
tWHRL
AI08972
Table 22.
Symbol
Write AC characteristics, Write Enable Controlled
Alt
M29W128FH,
M29W128FL
Parameter
60
70
Unit
tAVAV
tWC
Address Valid to Next Address Valid
Min
60
70
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45
45
ns
tDVWH
tDS
Input Valid to Write Enable High
Min
45
45
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
Min
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
Min
45
45
ns
Output Enable High to Write Enable Low
Min
0
0
ns
tOEH
Write Enable High to Output Enable Low
Min
0
0
ns
tBUSY
Program/Erase Valid to RB Low
Max
30
30
ns
tVCS
VCC High to Chip Enable Low
Min
50
50
µs
tGHWL
tWHGL
tWHRL
(1)
tVCHEL
1. Sampled only, not 100% tested.
47/78
DC and AC parameters
M29W128FH, M29W128FL
Figure 12. Write AC waveforms, Chip Enable Controlled
tAVAV
A0-A22/
A–1
VALID
tELAX
tAVEL
tEHWH
W
tWLEL
tEHGL
G
tGHEL
tELEH
E
tEHEL
tDVEH
DQ0-DQ7/
DQ8-DQ15
tEHDX
VALID
VCC
tVCHWL
RB
tEHRL
AI08973
Table 23.
Symbol
Write AC characteristics, Chip Enable Controlled
Alt
M29W128FH,
M29W128FL
Parameter
60
70
Unit
tAVAV
tWC
Address Valid to Next Address Valid
Min
60
70
ns
tWLEL
tWS
Write Enable Low to Chip Enable Low
Min
0
0
ns
tELEH
tCP
Chip Enable Low to Chip Enable High
Min
45
45
ns
tDVEH
tDS
Input Valid to Chip Enable High
Min
45
45
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
0
ns
tEHWH
tWH
Chip Enable High to Write Enable High
Min
0
0
ns
tEHEL
tCPH
Chip Enable High to Chip Enable Low
Min
30
30
ns
tAVEL
tAS
Address Valid to Chip Enable Low
Min
0
0
ns
tELAX
tAH
Chip Enable Low to Address Transition
Min
45
45
ns
Output Enable High Chip Enable Low
Min
0
0
ns
tOEH
Chip Enable High to Output Enable Low
Min
0
0
ns
tBUSY
Program/Erase Valid to RB Low
Max
30
30
ns
tVCS
VCC High to Write Enable Low
Min
50
50
µs
tGHEL
tEHGL
tEHRL
(1)
tVCHWL
1. Sampled only, not 100% tested.
48/78
M29W128FH, M29W128FL
DC and AC parameters
Figure 13. Reset/Block Temporary Unprotect AC waveforms (No Program/Erase ongoing)
RB
E, G
tPHEL,
tPHGL
RP
tPLPX
AI11300b
Figure 14. Reset/Block Temporary Unprotect during Program/Erase operation AC waveforms
tPLYH
RB
tRHEL, tRHGL
E, G
RP
tPLPX
AI11301b
Table 24.
Reset/Block Temporary Unprotect AC characteristics
Symbol
Alt
M29W128FH,
M29W128FL
Parameter
60
70
RP Low to Read mode, during Program or
Erase
Max
20
µs
tRP
RP Pulse Width
Min
500
ns
tRH
RP High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
50
ns
tRPD
RP Low to Standby Mode.
Min
20
ns
tRB
RB High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
0
ns
tPLYH(1)
tREADY
tPLPX
tPHEL, tPHGL(1)
tRHEL
tRHGL(1)
Unit
1. Sampled only, not 100% tested.
49/78
DC and AC parameters
M29W128FH, M29W128FL
Figure 15. Accelerated Program Timing waveforms
VPP
VPP/WP
VIL or VIH
tVHVPP
tVHVPP
AI05563
50/78
M29W128FH, M29W128FL
9
Package mechanical
Package mechanical
Figure 16. TSOP56 – 56 lead Plastic Thin Small Outline, 14 x 20mm, package outline
A2
1
N
e
E
B
N/2
A
D1
CP
D
DIE
C
A1
TSOP-b
α
L
1. Drawing is not to scale.
Table 25.
TSOP56 – 56 lead Plastic Thin Small Outline, 14 x 20mm, package
mechanical data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.200
Max
0.0472
A1
0.100
0.050
0.150
0.0039
0.0020
0.0059
A2
1.000
0.950
1.050
0.0394
0.0374
0.0413
B
0.220
0.170
0.270
0.0087
0.0067
0.0106
0.100
0.210
0.0039
0.0083
C
CP
0.100
0.0039
D
20.000
19.800
20.200
0.7874
0.7795
0.7953
D1
18.400
18.300
18.500
0.7244
0.7205
0.7283
e
0.500
–
–
0.0197
–
–
E
14.000
13.900
14.100
0.5512
0.5472
0.5551
L
0.600
0.500
0.700
0.0236
0.0197
0.0276
α
3°
0
5°
3°
0
5°
N
56
56
51/78
Package mechanical
M29W128FH, M29W128FL
Figure 17. TBGA64 10x13mm - 8x8 active ball array, 1mm pitch, package outline
D
D1
FD
FE
E
SD
SE
E1
ddd
BALL "A1"
A
e
b
A2
A1
BGA-Z23
1. Drawing is not to scale.
Table 26.
TBGA64 10x13mm - 8x8 active ball array, 1mm pitch, package mechanical
data
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
1.200
A1
0.300
A2
0.800
b
0.200
0.350
Max
0.0472
0.0118
0.0079
0.0138
0.0138
0.0197
0.0315
0.350
0.500
D
10.000
9.900
10.100
0.3937
0.3898
0.3976
D1
7.000
–
–
0.2756
–
–
ddd
52/78
Max
0.100
0.0039
e
1.000
–
–
0.0394
–
–
E
13.000
12.900
13.100
0.5118
0.5079
0.5157
E1
7.000
–
–
0.2756
–
–
FD
1.500
–
–
0.0591
–
–
FE
3.000
–
–
0.1181
–
–
SD
0.500
–
–
0.0197
–
–
SE
0.500
–
–
0.0197
–
–
M29W128FH, M29W128FL
10
Part numbering
Part numbering
Table 27.
Ordering information scheme
Example:
M29W128FH 70 N
6
F
Device type
M29
Operating voltage
W = VCC = 2.7 to 3.6V
Device function
128FH = 128 Mbit (x8/x16), Page, Uniform Block, Flash Memory,
Highest Block Protected by VPP/WP
128FL = 128 Mbit (x8/x16), Page, Uniform Block, Flash Memory,
Lowest Block Protected by VPP/WP
Speed
60 = 60ns
70 = 70ns
Package
N = TSOP56: 14 x 20 mm
ZA = TBGA64: 10 x13mm, 1mm pitch
Temperature range
6 = –40 to 85 °C
Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
Note:
This product is also available with the Extended Memory Block factory locked. For further
details and ordering information contact your nearest Numonyx sales office.
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect
of this device, please contact your nearest Numonyx Sales Office.
53/78
Block addresses and Read/Modify Protection Groups
Appendix A
Table 28.
M29W128FH, M29W128FL
Block addresses and Read/Modify Protection
Groups
Block Addresses and Protection Groups
Size
(KBytes/KWords)
Protection Block
Group
(x8)
(x16)
0
64/32
Protection Group
000000h-00FFFFh
000000h-007FFFh
1
64/32
Protection Group
010000h-01FFFFh
008000h-00FFFFh
2
64/32
Protection Group
020000h-02FFFFh
010000h-017FFFh
3
64/32
Protection Group
030000h-03FFFFh
018000h-01FFFFh
4
64/32
040000h-04FFFFh
020000h-027FFFh
5
64/32
050000h-05FFFFh
028000h-02FFFFh
Block
Protection Group
6
64/32
060000h-06FFFFh
030000h-037FFFh
7
64/32
070000h-07FFFFh
038000h-03FFFFh
8
64/32
080000h-08FFFFh
040000h-047FFFh
9
64/32
090000h-09FFFFh
048000h-04FFFFh
Protection Group
10
64/32
0A0000h-0AFFFFh
050000h-057FFFh
11
64/32
0B0000h-0BFFFFh
058000h-05FFFFh
12
64/32
0C0000h-0CFFFFh
060000h-067FFFh
13
64/32
0D0000h-0DFFFFh
068000h-06FFFFh
Protection Group
14
64/32
0E0000h-0EFFFFh
070000h-077FFFh
15
64/32
0F0000h-0FFFFFh
078000h-07FFFFh
16
64/32
100000h-10FFFFh
080000h-087FFFh
17
64/32
110000h-11FFFFh
088000h-08FFFFh
Protection Group
18
64/32
120000h-12FFFFh
090000h-097FFFh
19
64/32
130000h-13FFFFh
098000h-09FFFFh
20
64/32
140000h-14FFFFh
0A0000h-0A7FFFh
21
64/32
150000h-15FFFFh
0A8000h-0AFFFFh
Protection Group
22
64/32
160000h-16FFFFh
0B0000h-0B7FFFh
23
64/32
170000h-17FFFFh
0B8000h-0BFFFFh
24
64/32
180000h-18FFFFh
0C0000h-0C7FFFh
25
64/32
190000h-19FFFFh
0C8000h-0CFFFFh
Protection Group
26
64/32
1A0000h-1AFFFFh
0D0000h-0D7FFFh
27
64/32
1B0000h-1BFFFFh
0D8000h-0DFFFFh
54/78
M29W128FH, M29W128FL
Table 28.
Block
Block addresses and Read/Modify Protection Groups
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
28
64/32
29
64/32
Protection Block
Group
(x8)
(x16)
1C0000h-1CFFFFh
0E0000h-0E7FFFh
1D0000h-1DFFFFh
0E8000h-0EFFFFh
Protection Group
30
64/32
1E0000h-1EFFFFh
0F0000h-0F7FFFh
31
64/32
1F0000h-1FFFFFh
0F8000h-0FFFFFh
32
64/32
200000h-20FFFFh
100000h-107FFFh
33
64/32
210000h-21FFFFh
108000h–10FFFFh
Protection Group
34
64/32
220000h-22FFFFh
110000h–117FFFh
35
64/32
230000h-23FFFFh
118000h–11FFFFh
36
64/32
240000h-24FFFFh
120000h–127FFFh
37
64/32
250000h-25FFFFh
128000h–12FFFFh
Protection Group
38
64/32
260000h-26FFFFh
130000h–137FFFh
39
64/32
270000h-27FFFFh
138000h–13FFFFh
40
64/32
280000h-28FFFFh
140000h–147FFFh
41
64/32
290000h-29FFFFh
148000h–14FFFFh
Protection Group
42
64/32
2A0000h-2AFFFFh
150000h–157FFFh
43
64/32
2B0000h-2BFFFFh
158000h–15FFFFh
44
64/32
2C0000h-2CFFFFh
160000h–167FFFh
45
64/32
2D0000h-2DFFFFh
168000h–16FFFFh
Protection Group
46
64/32
2E0000h-2EFFFFh
170000h–177FFFh
47
64/32
2F0000h-2FFFFFh
178000h–17FFFFh
48
64/32
300000h-30FFFFh
180000h–187FFFh
49
64/32
310000h-31FFFFh
188000h–18FFFFh
Protection Group
50
64/32
320000h-32FFFFh
190000h–197FFFh
51
64/32
330000h-33FFFFh
198000h–19FFFFh
52
64/32
340000h-34FFFFh
1A0000h–1A7FFFh
53
64/32
350000h-35FFFFh
1A8000h–1AFFFFh
Protection Group
54
64/32
360000h-36FFFFh
1B0000h–1B7FFFh
55
64/32
370000h-37FFFFh
1B8000h–1BFFFFh
56
64/32
380000h-38FFFFh
1C0000h–1C7FFFh
57
64/32
390000h-39FFFFh
1C8000h–1CFFFFh
Protection Group
58
64/32
3A0000h-3AFFFFh
1D0000h–1D7FFFh
59
64/32
3B0000h-3BFFFFh
1D8000h–1DFFFFh
55/78
Block addresses and Read/Modify Protection Groups
Table 28.
Block
M29W128FH, M29W128FL
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
60
64/32
61
64/32
Protection Block
Group
(x8)
(x16)
3C0000h-3CFFFFh
1E0000h–1E7FFFh
3D0000h-3DFFFFh
1E8000h–1EFFFFh
Protection Group
62
64/32
3E0000h-3EFFFFh
1F0000h–1F7FFFh
63
64/32
3F0000h-3FFFFFh
1F8000h–1FFFFFh
64
64/32
400000h-40FFFFh
200000h–207FFFh
65
64/32
410000h-41FFFFh
208000h–20FFFFh
Protection Group
66
64/32
420000h-42FFFFh
210000h–217FFFh
67
64/32
430000h-43FFFFh
218000h–21FFFFh
68
64/32
440000h-44FFFFh
220000h–227FFFh
69
64/32
450000h-45FFFFh
228000h–22FFFFh
Protection Group
70
64/32
460000h-46FFFFh
230000h–237FFFh
71
64/32
470000h-47FFFFh
238000h–23FFFFh
72
64/32
480000h-48FFFFh
240000h–247FFFh
73
64/32
490000h-49FFFFh
248000h–24FFFFh
Protection Group
74
64/32
4A0000h-4AFFFFh
250000h–257FFFh
75
64/32
4B0000h-4BFFFFh
258000h–25FFFFh
76
64/32
4C0000h-4CFFFFh
260000h–267FFFh
77
64/32
4D0000h-4DFFFFh
268000h–26FFFFh
Protection Group
78
64/32
4E0000h-4EFFFFh
270000h–277FFFh
79
64/32
4F0000h-4FFFFFh
278000h–27FFFFh
80
64/32
500000h-50FFFFh
280000h–287FFFh
81
64/32
510000h-51FFFFh
288000h–28FFFFh
Protection Group
82
64/32
520000h-52FFFFh
290000h–297FFFh
83
64/32
530000h-53FFFFh
298000h–29FFFFh
84
64/32
540000h-54FFFFh
2A0000h–2A7FFFh
85
64/32
550000h-55FFFFh
2A8000h–2AFFFFh
Protection Group
86
64/32
560000h-56FFFFh
2B0000h–2B7FFFh
87
64/32
570000h-57FFFFh
2B8000h–2BFFFFh
88
64/32
580000h-58FFFFh
2C0000h–2C7FFFh
89
64/32
590000h-59FFFFh
2C8000h–2CFFFFh
Protection Group
90
64/32
5A0000h-5AFFFFh
2D0000h–2D7FFFh
91
64/32
5B0000h-5BFFFFh
2D8000h–2DFFFFh
56/78
M29W128FH, M29W128FL
Table 28.
Block
Block addresses and Read/Modify Protection Groups
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
92
64/32
93
64/32
Protection Block
Group
(x8)
(x16)
5C0000h-5CFFFFh
2E0000h–2E7FFFh
5D0000h-5DFFFFh
2E8000h–2EFFFFh
Protection Group
94
64/32
5E0000h-5EFFFFh
2F0000h–2F7FFFh
95
64/32
5F0000h-5FFFFFh
2F8000h–2FFFFFh
96
64/32
600000h-60FFFFh
300000h–307FFFh
97
64/32
610000h-61FFFFh
308000h–30FFFFh
Protection Group
98
64/32
620000h-62FFFFh
310000h–317FFFh
99
64/32
630000h-63FFFFh
318000h–31FFFFh
100
64/32
640000h-64FFFFh
320000h–327FFFh
101
64/32
650000h-65FFFFh
328000h–32FFFFh
Protection Group
102
64/32
660000h-66FFFFh
330000h–337FFFh
103
64/32
670000h-67FFFFh
338000h–33FFFFh
104
64/32
680000h-68FFFFh
340000h–347FFFh
105
64/32
690000h-69FFFFh
348000h–34FFFFh
Protection Group
106
64/32
6A0000h-6AFFFFh
350000h–357FFFh
107
64/32
6B0000h-6BFFFFh
358000h–35FFFFh
108
64/32
6C0000h-6CFFFFh
360000h–367FFFh
109
64/32
6D0000h-6DFFFFh
368000h–36FFFFh
Protection Group
110
64/32
6E0000h-6EFFFFh
370000h–377FFFh
111
64/32
6F0000h-6FFFFFh
378000h–37FFFFh
112
64/32
700000h–70FFFFh
380000h–387FFFh
113
64/32
710000h–71FFFFh
388000h–38FFFFh
Protection Group
114
64/32
720000h–72FFFFh
390000h–397FFFh
115
64/32
730000h–73FFFFh
398000h–39FFFFh
116
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
117
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
Protection Group
118
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
119
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
120
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
121
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
Protection Group
122
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
123
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
57/78
Block addresses and Read/Modify Protection Groups
Table 28.
Block
M29W128FH, M29W128FL
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
124
64/32
125
64/32
Protection Block
Group
(x8)
(x16)
7C0000h–7CFFFFh
3E0000h–3E7FFFh
7D0000h–7DFFFFh
3E8000h–3EFFFFh
Protection Group
126
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
127
64/32
7F0000h-7FFFFFh
3F8000h-3FFFFFh
128
64/32
800000h–80FFFFh
400000h–407FFFh
129
64/32
810000h–81FFFFh
408000h–40FFFFh
Protection Group
130
64/32
820000h–82FFFFh
410000h–417FFFh
131
64/32
830000h–83FFFFh
418000h–41FFFFh
132
64/32
840000h–84FFFFh
420000h–427FFFh
133
64/32
850000h–85FFFFh
428000h–42FFFFh
Protection Group
134
64/32
860000h–86FFFFh
430000h–437FFFh
135
64/32
870000h–87FFFFh
438000h–43FFFFh
136
64/32
880000h–88FFFFh
440000h–447FFFh
137
64/32
890000h–89FFFFh
448000h–44FFFFh
Protection Group
138
64/32
8A0000h–8AFFFFh
450000h–457FFFh
139
64/32
8B0000h–8BFFFFh
458000h–45FFFFh
140
64/32
8C0000h–8CFFFFh
460000h–467FFFh
141
64/32
8D0000h–8DFFFFh
468000h–46FFFFh
Protection Group
142
64/32
8E0000h–8EFFFFh
470000h–477FFFh
143
64/32
8F0000h-8FFFFFh
478000h–47FFFFh
144
64/32
900000h-90FFFFh
480000h–487FFFh
145
64/32
910000h–91FFFFh
488000h–48FFFFh
Protection Group
146
64/32
920000h–92FFFFh
490000h–497FFFh
147
64/32
930000h–93FFFFh
498000h–49FFFFh
148
64/32
940000h–94FFFFh
4A0000h–4A7FFFh
149
64/32
950000h–95FFFFh
4A8000h–4AFFFFh
Protection Group
150
64/32
960000h–96FFFFh
4B0000h–4B7FFFh
151
64/32
970000h–97FFFFh
4B8000h–4BFFFFh
152
64/32
980000h–98FFFFh
4C0000h–4C7FFFh
153
64/32
990000h–99FFFFh
4C8000h–4CFFFFh
Protection Group
154
64/32
9A0000h–9AFFFFh
4D0000h–4D7FFFh
155
64/32
9B0000h–9BFFFFh
4D8000h–4DFFFFh
58/78
M29W128FH, M29W128FL
Table 28.
Block
Block addresses and Read/Modify Protection Groups
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
156
64/32
157
64/32
Protection Block
Group
(x8)
(x16)
9C0000h–9CFFFFh
4E0000h–4E7FFFh
9D0000h–9DFFFFh
4E8000h–4EFFFFh
Protection Group
158
64/32
9E0000h–9EFFFFh
4F0000h–4F7FFFh
159
64/32
9F0000h–9FFFFFh
4F8000h-4FFFFFh
160
64/32
A00000h–A0FFFFh
500000h–507FFFh
161
64/32
A10000h–A1FFFFh
508000h–50FFFFh
Protection Group
162
64/32
A20000h–A2FFFFh
510000h–517FFFh
163
64/32
A30000h–A3FFFFh
518000h–51FFFFh
164
64/32
A40000h–A4FFFFh
520000h–527FFFh
165
64/32
A50000h–A5FFFFh
528000h–52FFFFh
Protection Group
166
64/32
A60000h–A6FFFFh
530000h–537FFFh
167
64/32
A70000h–A7FFFFh
538000h–53FFFFh
168
64/32
A80000h–A8FFFFh
540000h–547FFFh
169
64/32
A90000h–A9FFFFh
548000h–54FFFFh
Protection Group
170
64/32
AA0000h–AAFFFFh
550000h–557FFFh
171
64/32
AB0000h–ABFFFFh
558000h–55FFFFh
172
64/32
AC0000h–ACFFFFh
560000h–567FFFh
173
64/32
AD0000h–ADFFFFh
568000h–56FFFFh
Protection Group
174
64/32
AE0000h–AEFFFFh
570000h–577FFFh
175
64/32
AF0000h-AFFFFFh
578000h–57FFFFh
176
64/32
B00000h–B0FFFFh
580000h–587FFFh
177
64/32
B10000h–B1FFFFh
588000h–58FFFFh
Protection Group
178
64/32
B20000h–B2FFFFh
590000h–597FFFh
179
64/32
B30000h-B3FFFFh
598000h–59FFFFh
180
64/32
B40000h–B4FFFFh
5A0000h–5A7FFFh
181
64/32
B50000h–B5FFFFh
5A8000h–5AFFFFh
Protection Group
182
64/32
B60000h–B6FFFFh
5B0000h–5B7FFFh
183
64/32
B70000h-B7FFFFh
5B8000h–5BFFFFh
184
64/32
B80000h–B8FFFFh
5C0000h–5C7FFFh
185
64/32
B90000h–B9FFFFh
5C8000h–5CFFFFh
Protection Group
186
64/32
BA0000h–BAFFFFh
5D0000h–5D7FFFh
187
64/32
BB0000h–BBFFFFh
5D8000h–5DFFFFh
59/78
Block addresses and Read/Modify Protection Groups
Table 28.
Block
M29W128FH, M29W128FL
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
188
64/32
189
64/32
Protection Block
Group
(x8)
(x16)
BC0000h–BCFFFFh
5E0000h–5E7FFFh
BD0000h–BDFFFFh
5E8000h–5EFFFFh
Protection Group
190
64/32
BE0000h–BEFFFFh
5F0000h–5F7FFFh
191
64/32
BF0000h–BFFFFFh
5F8000h-5FFFFFh
192
64/32
C00000h–C0FFFFh
600000h–607FFFh
193
64/32
C10000h–C1FFFFh
608000h–60FFFFh
Protection Group
194
64/32
C20000h–C2FFFFh
610000h–617FFFh
195
64/32
C30000h–C3FFFFh
618000h–61FFFFh
196
64/32
C40000h–C4FFFFh
620000h–627FFFh
197
64/32
C50000h–C5FFFFh
628000h–62FFFFh
Protection Group
198
64/32
C60000h–C6FFFFh
630000h–637FFFh
199
64/32
C70000h-C7FFFFh
638000h–63FFFFh
200
64/32
C80000h–C8FFFFh
640000h–647FFFh
201
64/32
C90000h–C9FFFFh
648000h–64FFFFh
Protection Group
202
64/32
CA0000h–CAFFFFh
650000h–657FFFh
203
64/32
CB0000h–CBFFFFh
658000h–65FFFFh
204
64/32
CC0000h–CCFFFFh
660000h–667FFFh
205
64/32
CD0000h–CDFFFFh
668000h–66FFFFh
Protection Group
206
64/32
CE0000h–CEFFFFh
670000h–677FFFh
207
64/32
CF0000h-CFFFFFh
678000h–67FFFFh
208
64/32
D00000h–D0FFFFh
680000h–687FFFh
209
64/32
D10000h–D1FFFFh
688000h–68FFFFh
Protection Group
210
64/32
D20000h–D2FFFFh
690000h–697FFFh
211
64/32
D30000h–D3FFFFh
698000h–69FFFFh
212
64/32
D40000h–D4FFFFh
6A0000h–6A7FFFh
213
64/32
D50000h–D5FFFFh
6A8000h–6AFFFFh
Protection Group
214
64/32
D60000h–D6FFFFh
6B0000h–6B7FFFh
215
64/32
D70000h-D7FFFFh
6B8000h–6BFFFFh
216
64/32
D80000h-D8FFFFh
6C0000h–6C7FFFh
217
64/32
D90000h-D9FFFFh
6C8000h–6CFFFFh
Protection Group
218
64/32
DA0000h-DAFFFFh
6D0000h–6D7FFFh
219
64/32
DB0000h-DBFFFFh
6D8000h–6DFFFFh
60/78
M29W128FH, M29W128FL
Table 28.
Block
Block addresses and Read/Modify Protection Groups
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
220
64/32
221
64/32
Protection Block
Group
(x8)
(x16)
DC0000h-DCFFFFh
6E0000h–6E7FFFh
DD0000h-DDFFFFh
6E8000h–6EFFFFh
Protection Group
222
64/32
DE0000h-DEFFFFh
6F0000h–6F7FFFh
223
64/32
DF0000h-DFFFFFh
6F8000h-6FFFFFh
224
64/32
E00000h-E0FFFFh
700000h–707FFFh
225
64/32
E10000h-E1FFFFh
708000h–70FFFFh
Protection Group
226
64/32
E20000h-E2FFFFh
710000h–717FFFh
227
64/32
E30000h-E3FFFFh
718000h–71FFFFh
228
64/32
E40000h-E4FFFFh
720000h–727FFFh
229
64/32
E50000h-E5FFFFh
728000h–72FFFFh
Protection Group
230
64/32
E60000h-E6FFFFh
730000h–737FFFh
231
64/32
E70000h-E7FFFFh
738000h–73FFFFh
232
64/32
E80000h-E8FFFFh
740000h–747FFFh
233
64/32
E90000h-E9FFFFh
748000h–74FFFFh
Protection Group
234
64/32
EA0000h-EAFFFFh
750000h–757FFFh
235
64/32
EB0000h-EBFFFFh
758000h–75FFFFh
236
64/32
EC0000h-ECFFFFh
760000h–767FFFh
237
64/32
ED0000h-EDFFFFh
768000h–76FFFFh
Protection Group
238
64/32
EE0000h-EEFFFFh
770000h–777FFFh
239
64/32
EF0000h-EFFFFFh
778000h–77FFFFh
240
64/32
F00000h-F0FFFFh
780000h–787FFFh
241
64/32
F10000h-F1FFFFh
788000h–78FFFFh
Protection Group
242
64/32
F20000h-F2FFFFh
790000h–797FFFh
243
64/32
F30000h-F3FFFFh
798000h–79FFFFh
244
64/32
F40000h-F4FFFFh
7A0000h–7A7FFFh
245
64/32
F50000h-F5FFFFh
7A8000h–7AFFFFh
Protection Group
246
64/32
F60000h-F6FFFFh
7B0000h–7B7FFFh
247
64/32
F70000h-F7FFFFh
7B8000h–7BFFFFh
248
64/32
F80000h-F8FFFFh
7C0000h–7C7FFFh
249
64/32
F90000h-F9FFFFh
7C8000h–7CFFFFh
Protection Group
250
64/32
FA0000h-FAFFFFh
7D0000h–7D7FFFh
251
64/32
FB0000h-FBFFFFh
7D8000h–7DFFFFh
252
64/32
Protection Group
FC0000h-FCFFFFh
7E0000h–7E7FFFh
253
64/32
Protection Group
FD0000h-FDFFFFh
7E8000h–7EFFFFh
61/78
Block addresses and Read/Modify Protection Groups
Table 28.
M29W128FH, M29W128FL
Block Addresses and Protection Groups (continued)
Size
(KBytes/KWords)
Protection Block
Group
(x8)
(x16)
254
64/32
Protection Group
FE0000h-FEFFFFh
7F0000h–7F7FFFh
255
64/32
Protection Group
FF0000h-FFFFFFh
7F8000h–7FFFFFh
Block
62/78
M29W128FH, M29W128FL
Appendix B
Common Flash Interface (CFI)
Common Flash Interface (CFI)
The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from
the Flash memory device. It allows a system software to query the device to determine various electrical
and timing parameters, density information and functions supported by the memory. The system can
interface easily with the device, enabling the software to upgrade itself when necessary.
When the Read CFI Query command is issued, the memory enters Read CFI Query mode and read
operations output the CFI data. Table 29, Table 30, Table 31, Table 32, Table 33 and Table 34 show the
addresses (A-1, A0-A10) used to retrieve the data. The CFI data structure also contains a security area
where a 64 bit unique security number is written (see Table 34: Security Code Area). This area can be
accessed only in Read mode by the final user. It is impossible to change the security number after it has
been written by Numonyx.
Query Structure Overview(1)
Table 29.
Address
Sub-section Name
Description
x16
x8
10h
20h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
36h
System Interface Information
Device timing & voltage information
27h
4Eh
Device Geometry Definition
Flash device layout
40h
80h
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
61h
C2h
Security Code Area
64 bit unique device number
1. Query data are always presented on the lowest order data outputs.
CFI Query Identification String(1)
Table 30.
Address
Data
x16
x8
10h
20h
0051h
11h
22h
0052h
12h
24h
0059h
13h
26h
0002h
14h
28h
0000h
15h
2Ah
0040h
16h
2Ch
0000h
17h
2Eh
0000h
18h
30h
0000h
19h
32h
0000h
1Ah
34h
0000h
Description
Value
“Q”
Query Unique ASCII String "QRY"
"R"
"Y"
Primary Algorithm Command Set and Control Interface ID code 16 bit
ID code defining a specific algorithm
Address for Primary Algorithm extended Query table (see Table 33)
AMD
Compatible
P = 40h
Alternate Vendor Command Set and Control Interface ID Code
second vendor - specified algorithm supported
NA
Address for Alternate Algorithm extended Query table
NA
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
63/78
Common Flash Interface (CFI)
Table 31.
M29W128FH, M29W128FL
CFI Query System Interface Information(1)
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
3.0V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100mV
11.5V
12.5V
16µs
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 10mV
1Fh
3Eh
0004h
Typical timeout per single Byte/Word program = 2n µs
20h
40h
0000h
Typical timeout for minimum size write buffer program =
21h
42h
0009h
Typical timeout per individual block erase = 2n ms
22h
44h
23h
46h
0000h
0005h
Typical timeout for full Chip Erase =
2n
2n
µs
ms
Maximum timeout for Byte/Word program =
NA
times typical
512µs
2n
times typical
NA
48h
0000h
Maximum timeout for write buffer program =
25h
4Ah
0004h
Maximum timeout per individual block erase = 2n times typical
26h
4Ch
0000h
Maximum timeout for Chip Erase =
512ms
2n
24h
2n
NA
times typical
8s
NA
1. The values given in the above table are valid for both packages.
Table 32.
Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0018h
Device Size = 2n in number of Bytes
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
2Ah
2Bh
54h
56h
0006h
0000h
Maximum number of Bytes in Multiple-Byte program or Page= 2n
64
2Ch
58h
0001h
Number of Erase Block Regions. It specifies the number of regions
containing contiguous Erase Blocks of the same size.
1
2Dh
2Eh
5Ah
5Ch
00FFh
0000h
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 00FFh+1
2Fh
30h
5Eh
60h
0000h
0001h
Erase Block Region 1 Information
Block size in Region 1 = 0100h * 256 Byte
64/78
16 MBytes
x8, x16
Async.
256
64
KBytes
M29W128FH, M29W128FL
Table 32.
Common Flash Interface (CFI)
Device Geometry Definition (continued)
Address
Data
Description
Value
x16
x8
31h
32h
33h
34h
62h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information
0
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 information
0
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 information
0
Table 33.
Primary Algorithm-Specific Extended Query Table (1)
Address
Data
Description
Value
x16
x8
40h
80h
0050h
41h
82h
0052h
42h
84h
0049h
43h
86h
0031h
Major version number, ASCII
"1"
44h
88h
0033h
Minor version number, ASCII
"3"
45h
8Ah
000Ch
Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write
2
47h
8Eh
0001h
Block Protection
00 = not supported, x = number of sectors in per group
1
48h
90h
0001h
Temporary Block Unprotect
00 = not supported, 01 = supported
49h
92h
0006h
Block Protect /Unprotect
06 = M29W128FH/M29W128FL
4Ah
94h
0000h
Simultaneous Operations: Not Supported
NA
4Bh
96h
0000h
Burst Mode, 00 = not supported, 01 = supported
No
4Ch
98h
0002h
Page Mode, 00 = not supported, 02 = 8-Word page
02
4Dh
9Ah
00B5h
VPP Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100mV
"P"
Primary Algorithm extended Query table unique ASCII string “PRI”
"R"
"I"
Yes
6
11.5V
65/78
Common Flash Interface (CFI)
Table 33.
M29W128FH, M29W128FL
Primary Algorithm-Specific Extended Query Table (continued)(1)
Address
Data
x16
x8
4Eh
9Ch
Description
00C5h
VPP Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100mV
9Eh
0000h
Top/Bottom Boot Block Flag
00h = Uniform device
50h
A0h
0001h
Program Suspend, 00 = not supported, 01 = supported
1. The values given in the above table are valid for both packages.
Security Code Area
Address
Data
x16
x8
61h
C3h, C2h
XXXX
62h
C5h, C4h
XXXX
63h
C7h, C6h
XXXX
64h
C9h, C8h
XXXX
Description
64 bit: unique device number
66/78
12.5V
Uniform +
VPP/WP
Protecting
Highest or
Lowest
Block
4Fh
Table 34.
Value
Yes
M29W128FH, M29W128FL
Appendix C
Extended Memory Block
Extended Memory Block
The M29W128F has an extra block, the Extended Memory Block, that can be accessed
using a dedicated command. This Extended Memory Block is 128 Words in x16 mode and
256 Bytes in x8 mode. It is used as a security block (to provide a permanent security
identification number) or to store additional information.
The Extended Memory Block is either Factory Locked or Customer Lockable, its status is
indicated by bit DQ7. This bit is permanently set to either ‘1’ or ‘0’ at the factory and cannot
be changed. When set to ‘1’, it indicates that the device is factory locked and the Extended
Memory Block is protected. When set to ‘0’, it indicates that the device is customer lockable
and the Extended Memory Block is unprotected. Bit DQ7 being permanently locked to either
‘1’ or ‘0’ is another security feature which ensures that a customer lockable device cannot be
used instead of a factory locked one.
Bit DQ7 is the most significant bit in the Extended Memory Block Verify Indicator and a
specific procedure must be followed to read it. See Verify Extended Memory Block
Protection Indicator in Table 4: Block Protection, 8-bit mode and Table 7: Block Protection,
16-bit mode, for details of how to read bit DQ7.
The Extended Memory Block can only be accessed when the device is in Extended Memory
Block mode. For details of how the Extended Block mode is entered and exited, refer to the
Section 5.3.1: Enter Extended Memory Block command and Section 5.3.2: Exit Extended
Block command, and to Table 13 and Table 9.
C.1
Factory Locked Extended Memory Block
In devices where the Extended Memory Block is factory locked, the Security Identification
Number is written to the Extended Memory Block address space (see Table 35: Extended
Memory Block Address and Data) in the factory. The DQ7 bit is set to ‘1’ and the Extended
Memory Block cannot be unprotected.
67/78
Extended Memory Block
C.2
M29W128FH, M29W128FL
Customer Lockable Extended Memory Block
A device where the Extended Memory Block is customer lockable is delivered with the DQ7 bit set to ‘0’
and the Extended Memory Block unprotected. It is up to the customer to program and protect the
Extended Memory Block but care must be taken because the protection of the Extended Memory Block
is not reversible.
There are two ways of protecting the Extended Memory Block:
●
Issue the Enter Extended Block command to place the device in Extended Block mode, then use the
In-System Technique with RP either at VIH or at VID (refer to Appendix D: High Voltage Block
Protection, and to the corresponding flowcharts, Figure 20 and Figure 21, for a detailed explanation
of the technique).
●
Issue the Enter Extended Block command to place the device in Extended Block mode, then use the
Programmer Technique (refer to Appendix D: High Voltage Block Protection, and to the
corresponding flowcharts, Figure 18 and Figure 19, for a detailed explanation of the technique).
Once the Extended Memory Block is programmed and protected, the Exit Extended Block command
must be issued to exit the Extended Memory Block mode and return the device to Read mode.
Table 35.
Extended Memory Block Address and Data
Address(1)
Data
x8
x16
Factory Locked
Customer Lockable
000000h-0000FFh
000000h-00007Fh
Security Identification Number
Determined by Customer
1. See Table 28: Block Addresses and Protection Groups.
68/78
M29W128FH, M29W128FL
Appendix D
High Voltage Block Protection
High Voltage Block Protection
The High Voltage Block Protection can be used to prevent any operation from modifying the
data stored in the memory. The blocks are protected in groups, refer to Appendix A: Block
addresses and Read/Modify Protection Groups, and Table 28 for details of the Protection
Groups. Once protected, Program and Erase operations within the protected group fail to
change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is
described in the Signal Descriptions section.
To protect the Extended Memory Block issue the Enter Extended Block command and then
use either the Programmer or In-System technique. Once protected issue the Exit Extended
Block command to return to read mode. The Extended Memory Block protection is
irreversible, once protected the protection cannot be undone.
D.1
Programmer technique
The Programmer technique uses high (VID) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a group of blocks follow the flowchart in Figure 18: Programmer equipment Group
Protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first,
then all groups can be unprotected at the same time. To unprotect the chip follow Figure 19:
Programmer equipment Chip Unprotect flowchart. Table 36: Programmer technique Bus
operations, 8-bit or 16-bit mode, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not abort the procedure before
reaching the end. Chip Unprotect can take several seconds and a user message should be
provided to show that the operation is progressing.
69/78
High Voltage Block Protection
D.2
M29W128FH, M29W128FL
In-System technique
The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP
(1)
. This can be achieved without violating the maximum ratings of the components on the
microprocessor bus, therefore this technique is suitable for use after the memory has been fitted to the
system.
To protect a group of blocks follow the flowchart in Figure 20: In-System equipment Group Protect
flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, then all the groups
can be unprotected at the same time. To unprotect the chip follow Figure 21: In-System equipment Chip
Unprotect flowchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that
will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take
several seconds and a user message should be provided to show that the operation is progressing.
Note:
RP can be either at VIH or at VID when using the In-System Technique to protect the
Extended Memory Block.
Table 36.
Programmer technique Bus operations, 8-bit or 16-bit mode
Operation
E
G
W
Address Inputs
A0-A22
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block (Group) Protect(1)
VIL
VID
VIL Pulse
A9 = VID, A12-A22 Block Address
Others = X
X
Chip Unprotect
VID
VID
VIL Pulse
A6 = VIH, A9 = VID, A12 = VIH,
A15 = VIH Others = X
X
Block (Group) Protect
Verify
VIL
VIL
VIH
A0, A2, A3, A6 = VIL, A1 = VIH
A9 = VID, A12-A22= Block Address
Others = X
Pass = xx01h
Retry = xx00h.
VIH
A0, A2, A3 = VIL
A1, A6 = VIH
A9 = VID, A12-A22 = Block Address
Others = X
Pass = xx00h
Retry = xx01h.
Block (Group) Unprotect
Verify
VIL
VIL
1. Block Protection Groups are shown in Appendix D, Table 28.
70/78
M29W128FH, M29W128FL
Appendix E
Flowcharts
Flowcharts
Figure 18. Programmer equipment Group Protect flowchart
START
Set-up
ADDRESS =
GROUP ADDRESS
W = VIH
n=0
G, A9 = VID,
E = VIL
Wait 4µs
Protect
W = VIL
Wait 100µs
W = VIH
E, G = VIH, A1 = VIH
A0, A2 to A7 = VIL
E = VIL
Verify
Wait 4µs
G = VIL
Wait 60ns
Read DATA
DATA = 01h
End
YES
NO
++n
= 25
NO
YES
A9 = VIH
E, G = VIH
A9 = VIH
E, G = VIH
PASS
FAIL
AI07756b
1. Block Protection Groups are shown in Appendix D: High Voltage Block Protection, Table 28.
71/78
Flowcharts
M29W128FH, M29W128FL
Figure 19. Programmer equipment Chip Unprotect flowchart
START
Set-up
PROTECT ALL
GROUPS
n=0
CURRENT GROUP = 0
A6, A12, A15 = VIH(1)
E, G, A9 = VID
Wait 4µs
Unprotect
W = VIL
Wait 10ms
W = VIH
E, G = VIH
ADDRESS = CURRENT
GROUP ADDRESS
A0, A2, A3, A4, A5, A7 = VIL
A1, A6 = VIH
E = VIL
Wait 4µs
INCREMENT
CURRENT GROUP
Verify
G = VIL
Wait 60ns
Read DATA
NO
NO
++n
= 1000
DATA = 00h
YES
LAST
GROUP
End
YES
A9 = VIH
E, G = VIH
FAIL
NO
YES
A9 = VIH
E, G = VIH
PASS
AI07757b
1. Block Protection Groups are shown in Appendix D: High Voltage Block Protection, Table 28.
72/78
M29W128FH, M29W128FL
Flowcharts
Figure 20. In-System equipment Group Protect flowchart
Set-up
START
n=0
RP = VID
Protect
WRITE 60h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
WRITE 60h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
Wait 100µs
Verify
WRITE 40h
ADDRESS = GROUP ADDRESS
A0, A2, A3, A6 = VIL, A1 = VIH
Wait 4µs
READ DATA
ADDRESS = GROUP ADDRESS
A1 = VIH, A0, A2 to A7 = VIL
DATA = 01h
NO
End
YES
RP = VIH
++n
= 25
ISSUE READ/RESET
COMMAND
RP = VIH
PASS
NO
YES
ISSUE READ/RESET
COMMAND
FAIL
AI07758b
1. Block Protection Groups are shown in Appendix D: High Voltage Block Protection, Table 28.
2. RP can be either at VIH or at VID when using the In-System Technique to protect the Extended Memory Block.
73/78
Flowcharts
M29W128FH, M29W128FL
Figure 21. In-System equipment Chip Unprotect flowchart
START
PROTECT ALL GROUPS
Set-up
n=0
CURRENT GROUP = 0
RP = VID
WRITE 60h
ANY ADDRESS WITH
A1 = VIH, A0, A2 to A7 = VIL
Unprotect
WRITE 60h
ANY ADDRESS WITH
A0, A2, A3, A4, A5, A7 = VIL
A1, A6 = VIH
Wait 10ms
Verify
WRITE 40h
ADDRESS =
CURRENT GROUP ADDRESS
A1 = VIH, A0, A2 to A7 = VIL
Wait 4µs
INCREMENT
CURRENT GROUP
READ DATA
ADDRESS =
CURRENT GROUP ADDRESS
A1 = VIH, A0, A2 to A7 = VIL
NO
End
NO
++n
= 1000
DATA = 00h
YES
LAST
GROUP
YES
NO
YES
RP = VIH
RP = VIH
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
FAIL
PASS
AI07759d
1. Block Protection Groups are shown in Appendix D: High Voltage Block Protection, Table 28.
74/78
M29W128FH, M29W128FL
Flowcharts
Figure 22. Write to Buffer and Program flowchart and Pseudo Code
Start
Write to Buffer F0h
Command,
Block Address
Write n(1),
Block Address
First Part of the
Write to Buffer and Program Command
Write Buffer Data,
Start Address
X=n
YES
X=0
NO
Abort Write
to Buffer
YES
Write to a Different
Block Address
NO
Write Next Data,(3)
Program Address Pair
Write to Buffer and
Program Aborted(2)
X = X-1
Program Buffer
to Flash Block Address
Read Status Register
(DQ1, DQ5, DQ7) at
Last Loaded Address
YES
DQ7 = Data
NO
NO
DQ1 = 1
NO
DQ5 = 1
YES
YES
Check Status Register
(DQ5, DQ7) at
Last Loaded Address
DQ7 = Data
YES
(4)
NO
FAIL OR ABORT(5)
END
AI08968b
1. n+1 is the number of addresses to be programmed.
75/78
Flowcharts
M29W128FH, M29W128FL
2. A Write to Buffer and Program Abort and Reset must be issued to return the device in Read mode.
3. When the block address is specified, any address in the selected block address space is acceptable. However when
loading Write Buffer address with data, all addresses must fall within the selected Write Buffer page.
4. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.
5. If this flowchart location is reached because DQ5=’1’, then the Write to Buffer and Program command failed. If this
flowchart location is reached because DQ1=’1’, then the Write to Buffer and Program command aborted. In both cases, the
appropriate reset command must be issued to return the device in Read mode: a Reset command if the operation failed, a
Write to Buffer and Program Abort and Reset command if the operation aborted.
6. See Table 9 and Table 10, for details on Write to Buffer and Program command sequence.
76/78
M29W128FH, M29W128FL
Revision history
Revision history
Table 37.
Document revision history
Date
Version
29-Sep-2005
0.1
Changes
First Issue.
02-Dec-2005
1
Document status changed to “Full Datasheet“.
Title updated.
Program Suspend Latency time updated in Table 15: Program, Erase
Times and Program, Erase Endurance cycles.
07-Mar-2006
2
DQ7 changed to DQ7 for Program, Program During Erase Suspend and
Program Error in Table 16: Status register bits.
13-Mar-2006
3
Section 5.2.1: Write to Buffer and Program command, and Section 5.2.2:
Write to Buffer and Program Confirm command updated to cover 8-bit
mode. Note 2, Note 3, and Note 4 updated in Table 11: Fast Program
commands, 8-bit mode.
06-Apr-2006
4
Verify Extended Memory Block Protection bit command removed.
25-Oct-2006
5
Table 16: Status register bits updated.
06-Nov-2006
6
DQ7 was replaced by DQ7 for ‘Write to Buffer and Program Abort’ in
Table 16: Status register bits.
10-Dec-2007
7
Applied Numonyx branding.
77/78
M29W128FH, M29W128FL
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Copyright © 11/5/7, Numonyx, B.V., All Rights Reserved.
78/78