STMicroelectronics M54HC158K1 Rad-hard quad 2 channel multiplexer (inv.) Datasheet

M54HC158
RAD-HARD QUAD 2 CHANNEL MULTIPLEXER (INV.)
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HIGH SPEED:
tPD = 14ns (TYP.) at VCC = 6V
LOW POWER DISSIPATION:
ICC = 4µA(MAX.) at TA=25°C
HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OUTPUTS DRIVE CAPABILITY
10 LSTTL LOADS
WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 158
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9408-059
DESCRIPTION
The M54HC158 is an high speed CMOS QUAD 2
CHANNEL MULTIPLEXER fabricated with silicon
gate C2MOS technology.
DILC-16
FPC-16
ORDER CODES
PACKAGE
FM
EM
DILC
FPC
M54HC158D
M54HC158K
M54HC158D1
M54HC158K1
These device consist of four 2-input digital
multiplexer with common select and strobe inputs.
The M54HC158 is an inverting multiplexer.
When the STROBE input is held high, selection of
data is inhibited and all the outputs become high.
The SELECT decoding determines whether the A
or B inputs get routed to their corresponding Y
outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION
April 2004
Rev. 1
1/10
M54HC158
Figure 1: IEC Logic Symbols
Figure 2: Input And Output Equivalent Circuit
Table 1: Pin Description
PIN N°
SYMBOL
1
SELECT
2, 5, 11, 14
1A to 4A
Common Data Select
Input
Data Inputs From
NAME AND FUNCTION
3, 6, 10, 13
1B to 4B
Source A
Data Inputs From
4, 7, 9, 12
15
8
16
1Y to 4Y
STROBE
GND
VCC
Source B
Multiplexer Output
Strobe Inputs
Ground (0V)
Positive Supply Voltage
Table 2: Truth Table
INPUTS
STROBE
SELECT
A
B
Y
H
L
L
L
L
X
L
L
H
H
X
L
H
X
X
X
X
X
L
H
H
H
L
H
L
X : Don’t Care
2/10
OUTPUTS
M54HC158
Figure 3: Logic Diagram
Table 3: Absolute Maximum Ratings
Symbol
VCC
Parameter
Supply Voltage
Value
Unit
-0.5 to +7
V
VI
DC Input Voltage
-0.5 to VCC + 0.5
V
VO
DC Output Voltage
IIK
DC Input Diode Current
-0.5 to VCC + 0.5
± 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 25
mA
ICC or IGND DC VCC or Ground Current
PD
Power Dissipation
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
V
± 50
mA
300
mW
-65 to +150
°C
265
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
3/10
M54HC158
Table 4: Recommended Operating Conditions
Symbol
VCC
Parameter
Supply Voltage
Value
Unit
2 to 6
V
VI
Input Voltage
0 to VCC
V
VO
Output Voltage
0 to VCC
V
Top
Operating Temperature
Input Rise and Fall Time
tr, tf
-55 to 125
°C
VCC = 2.0V
0 to 1000
ns
VCC = 4.5V
0 to 500
ns
VCC = 6.0V
0 to 400
ns
Table 5: Dc Specifications
Test Condition
Symbol
VIH
VIL
VOH
VOL
II *
ICC
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
* : Applicable only to DIR, G, G input
4/10
Value
TA = 25°C
VCC
(V)
Min.
2.0
4.5
6.0
2.0
4.5
6.0
Typ.
Max.
1.5
3.15
4.2
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
1.5
3.15
4.2
0.5
1.35
1.8
Max.
1.5
3.15
4.2
0.5
1.35
1.8
V
0.5
1.35
1.8
2.0
IO=-20 µA
1.9
2.0
1.9
1.9
4.5
IO=-20 µA
4.4
4.5
4.4
4.4
Unit
V
6.0
IO=-20 µA
5.9
6.0
5.9
5.9
4.5
IO=-4.0 mA
4.18
4.31
4.13
4.10
6.0
IO=-5.2 mA
5.68
5.8
5.63
5.60
2.0
IO=20 µA
0.0
0.1
0.1
0.1
4.5
IO=20 µA
0.0
0.1
0.1
0.1
6.0
IO=20 µA
0.0
0.1
0.1
0.1
4.5
IO=4.0 mA
0.17
0.26
0.33
0.40
6.0
IO=5.2 mA
0.18
0.26
0.33
0.40
6.0
VI = VCC or GND
± 0.1
±1
±1
µA
6.0
VI = VCC or GND
4
40
80
µA
V
V
M54HC158
Table 6: AC Electrical Characteristics (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Symbol
Parameter
tTLH tTHL Output Transition
Time
tPLH tPHL Propagation Delay
Time (A, B - Y)
tPLH tPHL Propagation Delay
Time (SELECT - Y)
tPLH tPHL Propagation Delay
Time (STROBE -Y)
Value
TA = 25°C
VCC
(V)
Min.
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Typ.
Max.
30
8
7
30
12
10
50
16
14
36
12
10
75
15
13
100
20
17
125
25
21
115
23
20
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
95
19
16
125
25
21
155
31
26
145
29
25
Unit
Max.
110
22
19
150
30
26
190
38
32
175
35
30
ns
ns
ns
ns
Table 7: Capacitive Characteristics
Test Condition
Symbol
Parameter
VCC
(V)
Value
TA = 25°C
Min.
Typ.
Max.
10
CIN
Input Capacitance
5.0
5
CPD
Power Dissipation
Capacitance (note
1)
5.0
47
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
10
Unit
Max.
10
pF
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4(per channel)
Figure 4: Test Circuit
CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
5/10
M54HC158
Figure 5: Waveform: Propagation Delay Times (f=1MHz; 50% duty cycle)
6/10
M54HC158
DILC-16 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
2.1
2.71
0.083
0.107
a1
3.00
3.70
0.118
0.146
a2
0.63
1.14
0.025
B
1.82
2.39
0.072
b
0.40
0.45
0.50
0.016
0.018
0.020
b1
0.20
0.254
0.30
0.008
0.010
0.012
D
20.06
20.32
20.58
0.790
0.800
0.810
e
7.36
7.62
7.87
0.290
0.300
0.310
e1
0.88
2.54
0.035
0.045
0.094
0.100
e2
17.65
17.78
17.90
0.695
0.700
0.705
e3
7.62
7.87
8.12
0.300
0.310
0.320
F
7.29
7.49
7.70
0.287
0.295
0.303
I
3.83
0.151
K
10.90
12.1
0.429
0.476
L
1.14
1.5
0.045
0.059
0056437F
7/10
M54HC158
FPC-16 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
6.75
6.91
7.06
0.266
0.272
0.278
B
9.76
9.94
10.14
0.384
0.392
0.399
C
1.49
1.95
0.059
D
0.102
0.127
0.152
0.004
0.005
0.006
E
8.76
8.89
9.01
0.345
0.350
0.355
F
0.077
1.27
G
0.38
H
6.0
L
18.75
M
0.33
0.050
0.43
0.48
0.015
0.017
0.019
0.237
0.38
N
22.0
0.738
0.43
0.013
0.867
0.015
4.31
0.017
0.170
G
F
D
H
9
16
A
N
L
8
1
H
E
B
8/10
M
C
0016030E
M54HC158
Table 8: Revision History
Date
Revision
30-Apr-2004
1
Description of Changes
First Release
9/10
M54HC158
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