MACOM MA4FCP300-T Silicon flip chip pin diode Datasheet

MA4FCP300
Silicon Flip Chip
PIN Diode
V 1.00
1269 Outline Drawing
Features
n
n
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Low Series Resistance : 2.6 Ω
Low Capacitance : 45 fF
Fast Switching Speed : 40 nS
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Automated Pick and Place Insertion
Rugged by Design
Top View
A
B
F
Side View
D
Description
M/A-COM’s MA4FCP Series consists of Silicon Flip Chip PIN
diodes fabricated with M/A-COM’s patented HMIC process. This
diode is fabricated on epitaxial wafers using a process designed for
repeatable electrical characteristics and extremely low parasitics.
This diode is fully passivated with Silicon Nitride and has an
additional layer of Polyimide for scratch protection. These
protective coatings prevent damage to the junction during
automated or manual handling. This flip chip configuration is
suitable for pick and place insertion.
E
D
C
Bottom View
Applications
Cathode Mark
The small 0315 outline and low 0.12 pS RC product, make the
device useful for multi-throw switch and switched phase shifter
circuits requiring < 40 nS switching speeds up to 18 GHz operating
frequency.
Absolute Maximum Ratings
@ 25 °C1
Nominal Die Dimensions
Inches
Dim
Parameter
Value
Forward Current
100 mA
Reverse Voltage
-100 V
Operating Temperature
-55 °C to +150 °C
Storage Temperature
-55 °C to +150 °C
Junction Temperature
Dissipated Power
Mounting Temperature
+175 °C
150 mW
+300 °C for 10 seconds
1. Exceeding any of these values may result in permanent
damage
Millimeters
A
Min
0.0269
Max
0.0289
Min
0.683
Max
0.733
B
0.0135
0.0155
0.343
0.393
C
0.0040
0.0080
0.102
0.203
D
0.0041
0.0061
0.105
0.155
E
0.0124
0.0144
0.315
0.365
F
0.0069
0.0089
0.175
0.225
Silicon Flip Chip PIN Diode
MA4FCP300
V 1.00
Electrical Specifications @ TA = + 25 °C
Parameters @ Conditions
Symbol
Units
Total Capacitance @ -10 V, 1 MHz1
CT
Total Capacitance @ -10 V, 1 GHz1,3
Typ.
Max.
pF
0.045
0.050
CT
pF
0.025
Series Resistance @ +50 mA2,3 , 100 MHz
RS
Ω
2.1
Series Resistance @ +50 mA2,3 , 1 GHz
RS
Ω
2.6
Forward Voltage @ +100 mA
VF
V
1.1
Reverse Voltage @ -10 µ A
VR
V
Reverse Current @ -70 V
IR
nA
l -100 l
50 - 90% Lifetime @ +10 mA / -6 mA
TL
ns
140
θ
° C/W
450
Steady State Thermal Resistance4
1.
2.
3.
4.
Min.
l -70 l
1.5
l -100 l
Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance, Cp.
Series resistance RS is equivalent to the total diode series resistance including the junction resistance Rj.
Rs and Cp measured on an HP4291A with die mounted in an ODS-186 package.
Steady-state thermal resistance measured with die mounted in an ODS-186 package.
Assembly Considerations
Mounting Techniques
The following precautions should be observed for successful
assembly of the die.
These devices were designed for insertion onto hard or soft
substrates with the junction side down. They can be mounted
with electrically conductive epoxy or with a low temperature
solder preform. The die can also be assembled with the
junction side up, and wire or ribbon bonds made to the pads.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
ESD
These devices very susceptible to ESD and are rated Class 0
(0-199 V) per HBM MIL-STD-883, method 3015.7
[C = 100 pF ±10%, R = 1.5k Ω ±1%]. Even though tested die
pass 100 V ESD, they must be handled in a static-free
environment
General Handling
The protective polymer coating on the active areas of these
devices provides scratch protection, particularly for the metal
airbridge that contacts the anode. Die can be handled with
tweezers or vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
Solder Die Attach Using
Electrically Conductive Ag Epoxy
and Solder
These chips are designed to be inserted onto hard or soft
substrates with the junction side down. They should be
mounted onto silkscreened circuits using
Electrically
Conductive Ag Epoxy, approximately 1-2 mils in thickness
and cured at approximately 90 °C to 150 °C per
manufacturer’s schedule . For extended cure times >30
minutes, temperatures must be below 200 °C.
Sn Rich Solders are not recommended due to the Tungsten
Metallization scheme beneath the gold contacts. Indalloy or
80 Au/20 Sn Solders are acceptable. Maximum soldering
temperature must be <300 °C for <10 sec.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Silicon Flip Chip PIN Diode
MA4FCP300
V 1.00
Circuit Mounting Dimensions (Inches)
0.013
0.012
(2) PL
0.008
(2) PL
Ordering Information
Part Number
Package
MA4FCP300
Die in Carrier
MA4FCP300-T
Tape/Reel
MA4FCP300-W
Wafer on Frame
Diode Model
Rs
_
+
Ls = 0.6 nH
Ct
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Silicon Flip Chip PIN Diode
MA4FCP300
V 1.00
Capacitance vs Frequency
0.08
0.07
0.06
0.05
0.04
Ct @ -10V
0.03
0.02
0.01
0.00
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
Frequency (GHz)
Rs vs Frequency
5.00
4.50
4.00
3.50
3.00
Rs @ 50 mA
2.50
2.00
1.50
1.00
0.50
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
Frequency (GHz)
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
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