Panasonic MA6D49 Silicon planar type (cathode common) Datasheet

Fast Recovery Diodes (FRD)
MA3D649
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification
4.6 ± 0.2
15.0 ± 0.5
■ Features
φ 3.2 ± 0.1
1.4 ± 0.2
13.7 ± 0.2
4.2 ± 0.2
• Low forward rise voltage VF
• Fast reverse recovery time trr
• TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
• Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Non-repetitive peak reverse
surge voltage
VRSM
200
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward
surge current*
IFSM
30
A
Junction temperature
Tj
−40 to +150
°C
Storage temperature
Tstg
−40 to +150
°C
2.6 ± 0.1
1.6 ± 0.2
0.8 ± 0.1
1
Parameter
2.9 ± 0.2
3.0 ± 0.5
9.9 ± 0.3
2
0.55 ± 0.15
2.54 ± 0.3
3 5.08 ± 0.5
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Internal Connection
1
2
3
Min
Typ
Max
Note) * : Half sine-wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Repetitive peak reverse current
Conditions
IRRM1
VRRM = 200 V, TC = 25°C
20
µA
IRRM2
VRRM = 200 V, Tj = 150°C
2
mA
Forward voltage (DC)
VF
IF = 2.5 A, TC = 25°C
Reverse recovery time*
trr
IF = 1 A, IR = 1 A
Thermal resistance
Unit
0.98
V
30
ns
Rth(j-c)
3
°C/W
Rth(j-a)
63
°C/W
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg × cm
3. * : trr measuring circuit
50 Ω
50 Ω
trr
IF
D.U.T
5.5 Ω
IR
0.1 × IR
1
MA3D649
Fast Recovery Diodes (FRD)
IF  V F
VF  Ta
10
1.4
Forward voltage VF (V)
−20°C
100°C
25°C
10−1
10−2
10−3
Ta = 150°C
103
Reverse current IR (µA)
Ta = 150°C
1
Forward current IF (A)
IR  VR
104
1.6
1.2
IF = 5 A
1.0
0.8
2.5 A
1A
0.6
0.4
100°C
102
10
25°C
1
10−1
10−4
0.2
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
10−2
0
IR  T a
Reverse current IR (µA)
200
100
10
0
40
80
120
160
200
IF(AV)  TC
6
t0 / t1 = 1/2
5
1/3
DC
1/6
4
3
2
1
t0
t1
40
60
80
0
50
100 120 140 160
Case temperature TC (°C)
150
200
250
300
PD(AV)  IF(AV)
12
20
10
0
100
Reverse voltage VR (V)
f = 1 MHz
Ta = 25°C
Terminal capacitance Ct (pF)
VR = 200 V
100 V
10 V
Ambient temperature Ta (°C)
Average forward current IF(AV) (A)
160
Ct  VR
1
2
120
30
1 000
0
20
80
Ambient temperature Ta (°C)
10 000
0.1
−40
40
0
50
100
150
200
250
Reverse voltage VR (V)
300
Average forward power PD(AV) (W)
10−5
t0
t1
10
8
t0 / t1 = 1/6
6
1/3
1/2
DC
4
2
0
0
1
2
3
4
5
6
Average forward current IF(AV) (A)