MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS Features • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter • • • MT2 Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes Pb−Free Packages are Available* MT1 G MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC212A8 MAC212A10 VDRM, VRRM On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 12 A Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +25°C) Preceded and followed by rated current ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s PGM 20 W PG(AV) 0.35 W IGM 2.0 A Peak Gate Power (TC = +85°C, Pulse Width = 10 ms) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 ms) Value Unit 600 800 1 TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. December, 2005 − Rev. 2 2 TO−220AB CASE 221A−07 STYLE 4 3 x A Y WW G = 8 or 10 = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT Operating Junction Temperature Range © Semiconductor Components Industries, LLC, 2005 MAC212AxG AYWW V 1 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Package Shipping MAC212A8D Device TO−220AB 500 Units / Box MAC212A8DG TO−220AB (Pb−Free) 500 Units / Box MAC212A10 TO−220AB 500 Units / Box MAC212A10G TO−220AB (Pb−Free) 500 Units / Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC212A8/D MAC212A8, MAC212A10 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, r Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs Symbol Value Unit RqJC RqJA 2.0 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA − 1.3 1.75 V OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C IDRM, IRRM ON CHARACTERISTICS Peak On-State Voltage ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2% VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants VGD mA − − − − 12 12 20 35 50 50 50 75 V − − − − 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 V 0.2 − − Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA) IH − 6.0 50 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms) tgt − 1.5 − ms dv/dt(c) − 5.0 − V/ms dv/dt − 100 − V/ms DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) http://onsemi.com 2 MAC212A8, MAC212A10 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM 125 PD(AV), AVERAGE POWER DISSIPATION (WATT) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) MAC212A8, MAC212A10 115 α = 30° 105 60° 90° α 95 α 85 75 180° dc α = CONDUCTION ANGLE 0 2.0 4.0 6.0 8.0 10 12 14 α 20 α dc α = 180° 90° 60° 30° α = CONDUCTION ANGLE 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation 12 14 7.0 10 ITSM , PEAK SURGE CURRENT (AMP) 100 50 20 10 5.0 TJ = 25°C TJ = 125°C 80 60 40 20 CYCLE TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 0 1.0 1.0 2.0 3.0 5.0 NUMBER OF CYCLES 0.5 Figure 4. Maximum Non−Repetitive Surge Current 0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 24 IT(RMS), RMS ON-STATE CURRENT (AMP) 100 2.0 28 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Maximum On−State Voltage Characteristics 2.0 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 −60 −40 −20 0 20 40 60 TC, CASE TEMPERATURE (°C) Figure 5. Typical Gate Trigger Voltage http://onsemi.com 4 80 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2.8 2.0 IH , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) MAC212A8, MAC212A10 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 −60 −40 −20 0 20 40 60 2.4 1.6 1.2 0.8 0.4 0 −60 80 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 2.0 −40 −20 0 20 40 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current 60 80 1.0 0.5 0.2 ZqJC(t) = r(t) • RqJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t, TIME (ms) 100 Figure 8. Thermal Response http://onsemi.com 5 200 500 1.0 k 2.0 k 5.0 k 10 k MAC212A8, MAC212A10 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MAC212A8/D