Order this document by MAC6071/D SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 4 AMPERES RMS 200 thru 600 VOLTS • Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions • Gate Triggering 4 Mode — MAC6071A,B, MAC6073A,B, MAC6075A,B • Blocking Voltages to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110°C) Symbol Value VDRM Volts 200 400 600 MAC6071A,B MAC6073A,B MAC6075A,B On-State Current RMS (TC = 85°C) Unit IT(RMS) 4 Amps 30 Amps Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 3.7 A2s Peak Gate Power PGM 10 Watts PG(AV) 0.5 Watt VGM 5 Volts TJ –40 to +110 °C Tstg –40 to +150 °C — 8 in. lb. Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C) Average Gate Power Peak Gate Voltage Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw)(2) 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1996 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 3.5 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak Blocking Current (VD = Rated VDRM, gate open) Symbol VTM Peak Gate Trigger Voltage (Continuous dc) (TJ = –40°C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–); MT2(–), G(+) (TJ = 110°C) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–); MT2(–), G(+) (TJ = 25°C) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–); MT2(–), G(+) VGT Holding Current (Either Direction) (TJ = –40°C) (Main Terminal Voltage = 12 Vdc, Gate Open) (Initiating Current = 150 mA) (TJ = 25°C) IH Latching Current MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) IL TJ = 25°C Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MAC6071A, MAC6073A, MAC6075A MT2(+), G(+) TJ = 25°C MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) 2 Typ Max Unit — — — — 10 2.0 µA mA — 1.3 2.0 Volts IDRM (TJ = 25°C) (TJ = 110°C) On-State Voltage (Either Direction) (ITM = 6 A Peak) (VD = 6 V) (IG = 8 mA) (IG = 8 mA) (IG = 8 mA) (IG = 15 mA) Min TJ = –40°C Volts 0.5 0.5 0.8 0.8 1.9 1.9 0.2 0.2 0.4 0.4 0.9 0.9 0.4 0.4 0.7 0.7 1.4 1.4 mA 0.4 0.2 2.0 1.0 10 5.0 — — — — 2.0 5.0 1.0 2.0 10 20 10 10 mA IGT mA 0.4 0.4 0.4 0.8 2.0 3.0 3.0 4.5 5.0 5.0 5.0 10 0.8 0.8 0.8 1.6 3.5 4.5 5.0 10 10 10 10 20 Motorola Thyristor Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MAC6071B, MAC6073B, MAC6075B MT2(+), G(+) TJ = 25°C MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) Min Typ Max Unit IGT mA 0.4 0.4 0.4 0.8 1.5 2.5 2.5 3.5 3.0 3.0 3.0 5.0 0.8 0.8 0.8 1.6 3.0 4.0 4.5 7.5 8.0 8.0 8.0 15 tgt — 1.5 — µs Symbol Min Typ Max Unit — 2.2 — — 7.0 — TJ = –40°C Turn-On Time (Either Direction) (ITM = 14 Adc, IGT = 100 mAdc) DYNAMIC CHARACTERISTICS Characteristic Critical Rate of Rise of Off–State Voltage (VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 Vm/sec, Gate Open, TJ = 110°C, f = 250 Hz, Snubber: CS = 0.1 mF, RS = 56 W, see Figure 16) (di/dt)c Critical Rate of Rise of Off–State Voltage (VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110°C) dv/dt A/ms V/ms SAMPLE APPLICATION: TTL-SENSITIVE GATE 4 AMPERE TRIAC TRIGGERS IN MODES II AND III 14 0V MC7400 4 7 VEE = 5.0 V + –VEE 2N6071A 510 Ω LOAD 115 VAC 60 Hz QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I MT2(+), G(–) MT2(+), G(+) QUADRANT III QUADRANT IV MT2(–), G(–) MT2(–), G(+) G(–) G(+) MT2(–) NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see the Motorola’s Thyristor Data Book (DL137/D, Revision 6). 1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6–25. 2. Silicon Bilateral Switch (SBS) Applications, page 1.6–41. Motorola Thyristor Device Data 3 105 T = 30° 100 60° 90° 120° 95 α α 90 180° α = CONDUCTION ANGLE 85 0 0.5 1.0 1.5 DC 2.0 2.5 3.0 3.5 4.0 180° 120° α 5.0 α = CONDUCTION ANGLE 90° 4.0 60° 3.0 T = 30° 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 1. RMS Current Derating Figure 2. Maximum On–State Power Dissipation 10 MAXIMUM @ TJ = 110°C 1.0 MAXIMUM @ TJ = 25°C 1.0 DC α 6.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) TYPICAL @ TJ = 25°C 0.01 0.5 7.0 IT(RMS), RMS ON–STATE CURRENT (AMPS) 100 0.1 AVERAGE POWER P(AV) DISSIPATION (WATTS) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Z q JC(t) ° C/W TRANSIENT THERMAL RESISTANCE IT, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 110 10 MAXIMUM 1.0 0.1 0.1 1.0 10 1S103 100 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On–State Characteristics Figure 4. Transient Thermal Response 2.5 4.0 1S104 9.0 1.5 IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) 8.0 2.0 MT2 NEGATIVE 1.0 MT2 POSITIVE 0.5 7.0 5.0 4.0 4 –20 0 20 40 60 80 100 110 Q4 IG = 15 mA 3.0 2.0 Q1 IG = 8 mA 1.0 0 –40 Q2 IG = 8 mA 6.0 Q3 IG = 8 mA 0 –40 –20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature (MAC6075B) Motorola Thyristor Device Data 6.0 Q4 Q3 4.0 Q2 Q1 2.0 0 –40 –20 0 20 40 60 80 0.8 0.7 0.6 Q3 Q2 Q1 Q4 0.5 0.4 0.3 –40 100 110 –20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 8. Typical Gate Trigger Voltage versus Junction Temperature 24 30 RG–MT1 = 510 W TJ = 110°C VPK = 400 V TJ = 100°C 25 20 STATIC dv/dt (V/uS) 22 STATIC dv/dt (V/uS) 0.9 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 8.0 500 V 18 20 110°C 15 120°C 600 V 16 100 200 300 400 500 600 700 800 900 10 400 1000 450 500 Figure 9. Typical Exponential Static dv/dt versus Gate–MT1 Resistance, MT2(+) Figure 10. Typical Exponential Static dv/dt versus Peak Voltage, MT2(+) 11 RG–MT1 = 510 W TJ = 110°C VPK = 400 V 25 VPK = 400 V 10.5 STATIC dv/dt (V/uS) STATIC dv/dt (V/uS) 600 VPK, PEAK VOLTAGE (VOLTS) 30 20 550 RGK, GATE–MT1 RESISTANCE (OHMS) 500 V 600 V 10 500 V 9.5 15 600 V 10 100 105 110 115 120 9.0 100 200 300 400 500 600 700 800 900 TJ, JUNCTION TEMPERATURE (°C) RGK, GATE–MT1 RESISTANCE (OHMS) Figure 11. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 12. Typical Exponential Static dv/dt versus Gate–MT1 Resistance, MT2(–) Motorola Thyristor Device Data 1000 5 16 16 RG–MT1 = 510 W 14 TJ = 100°C STATIC dv/dt (V/uS) STATIC dv/dt (V/uS) 14 RG–MT1 = 510 W 12 110°C 10 12 VPK = 400 V 500 V 10 600 V 8.0 8.0 120°C 6.0 400 450 500 550 6.0 100 600 105 110 115 VPK, PEAK VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Typical Exponential Static dv/dt versus Peak Voltage, MT2(–) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(–) 120 (dv/dt)c, CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/us) 1.2 100°C TJ = 110°C 90°C 1.1 GATE OPEN 1.0 0.9 0.8 tw f 0.7 + 2t1w 0.6 2.4 2.6 2.8 3.0 ń + (di dt) c 200 V 3.2 6f I TM 1000 3.4 3.6 3.8 4.0 4.2 (di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage 80 mHY LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 TRIGGER CHARGE CHARGE CONTROL 5 mF NON–POLAR CL TRIGGER CONTROL MEASURE I RS 2 1N914 51 CS 56 W 0.1 mF ADJUST FOR dv/dt(c) 200 V 1 G NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 6 Motorola Thyristor Device Data PACKAGE DIMENSIONS –B– U F Q –A– C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 2 3 H STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– M CASE 77–08 (TO–225AA) Motorola Thyristor Device Data 7 Motorola reserves the right to make changes without further notice to any products herein. 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