•M •C •C • MBR3020WT THRU MBR3060WT omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features 30 Amp Schottky l High Surge Capacity l Low Power Loss, High Efficiency l High Current Capability, Low VF l Metal of silicon Rectifier, majority Carrier Conduction l Guard Ring For Transient Protection l Plastic Package Has UL Flammability Classification 94V-0 Barrier Rectifier 20 to 60 Volts Maximum Ratings o TO-247 o l Operating Temperature: -55 C to +150 C l Storage Temperature: -55 C to +175 C o o Maximum Maximum MCC Part Number Re current Peak RMS Voltage Reverse Voltage MBR3020WT MBR3030WT MBR3035WT MBR3040WT MBR3045WT MBR3060WT 20V 30V 35V 40V 45V 60V 14V 21V 24.5V 28V 31.5V 42V Maximum DC Blocking Voltage F E A P G Q O 20V 30V 35V 40V 45V 60V PIN K 2 1 3 D H C I Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR3020WT-3045WT MBR3060WT MBR3020WT-3045WT MBR3060WT Maximum DC Reverse Current At Rated DC Blocking Voltage MBR3020WT-3045WT MBR3060WT MBR3020WT-3045WT MBR3060WT Typical Junction Capacitance I F(AV) 30.0A I FSM 200A VF .63V .75V .76V .80V IR 1mA 5mA 60mA 100mA Cj 500pF Pulse test: Pulse width 300 usec, duty cycle 2%. N J Electrical Characteristics @ 25oC Unless Otherwise Specified Average Forward Current B L L M PIN 1 PIN 2 CASE o T C=125 C PIN 3 8.3ms half sine I FM = 20 .0A o TA = 2 5 C I FM =30.0A T A = 2 5o C T C = 2 5o C T C = 2 5o C T C = 1 2 5oo C TC=125 C Measured at 1.0MHz, V R =4.0V A B C D E F G H I J K L M N O P Q INCHES MM .620 .640 15.75 16.25 .837 .856 21.25 21.75 .772 .791 19.60 20.10 .149 .172 3.78 4.38 .074 .082 1.88 2.08 .192 .202 4.87 5.13 .173 TYP 4.4 TYP .075 .085 1.90 2.16 .115 .127 2.93 3.22 .044 .048 1.12 1.22 .114 .126 2.90 3.20 .205 .224 5.20 5.70 .083 .095 2.10 2.40 .020 .030 0.51 0.76 .076 .086 1.93 2.18 20° TYP 10° TYP www.mccsemi.com •M •C •C • AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES MBR3020WT thru MBR3060WT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 200 150 100 50 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 175 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 10 TJ = 75 C 1.0 0.1 TJ = 25 C 10 MBR3020WT~ MBR3045WT MBR3060WT 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 0.01 0.1 0 20 40 60 80 100 140 120 0 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 0.5 0.6 0.7 0.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 4 10 100 REVERSE VOLTAGE , VOLTS www.mccsemi.com 0.9