VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common cathode 2 • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability 1 3 Anode Anode 2 1 2 Common cathode TO-247AC • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 15 A VR 35 V, 45 V VF at IF See Electrical table IRM max. 100 mA at 125 °C DESCRIPTION TJ max. 150 °C Diode variation Common cathode EAS See Electrical table The VS-MBR30..WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL VALUES IF(AV) Rectangular waveform (per device) 30 IFRM TC = 125 °C (per leg) 30 VRRM IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C TJ Range UNITS A 35/45 V 1020 A 0.60 V - 65 to 150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-MBR3035WTPbF VS-MBR3035WT-N3 VS-MBR3045WTPbF VS-MBR3045WT-N3 UNITS VR 35 35 45 45 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per leg per device Peak repetitive forward current per leg TEST CONDITIONS TC = 125 °C, rated VR IFRM Rated VR, square wave, 20 kHz TC = 125 °C Peak repetitive reverse surge current Revision: 30-Aug-11 IFSM IRRM UNITS 15 IF(AV) 5 µs sine or 3 µs rect. pulse Non-repetitive peak surge current VALUES 30 Following any rated load condition and with rated VRRM applied 30 1020 Surge applied at rated load conditions half wave, single phase, 60 Hz 200 2.0 µs 1.0 kHz 2.0 A Document Number: 94293 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TJ = 25 °C 30 A VFM (1) Maximum forward voltage drop 20 A TJ = 125 °C 30 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum VALUES UNITS 0.76 0.60 V 0.72 1.0 100 mA 0.29 V 13.8 m Forward slope resistance rT Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 800 pF Typical series inductance LS Measured from top of terminal to mounting plane 7.5 nH 10 000 V/µs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance, junction to case per leg RthJC DC operation 1.40 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.24 °C/W 6 g 0.21 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Approximate weight Mounting torque Marking device Revision: 30-Aug-11 °C Case style TO-247AC (JEDEC) MBR3035WT MBR3045WT Document Number: 94293 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series www.vishay.com Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 30-Aug-11 Document Number: 94293 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series Vishay Semiconductors 16 150 140 DC 130 Square wave (D = 0.50) VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 14 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 12 10 8 RMS limit 6 4 DC 2 See note (1) 100 0 4 0 8 12 16 20 24 0 4 8 12 16 20 24 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 30-Aug-11 Document Number: 94293 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 30 45 WT PbF 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (30 = 30 A) 4 - Voltage ratings 5 - Circuit configuration: 35 = 35 V 45 = 45 V Center tap (dual) TO-247 - 6 Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-MBR3035WTPbF 25 500 PACKAGING DESCRIPTION Antistatic plastic tube VS-MBR3035WT-N3 25 500 Antistatic plastic tube VS-MBR3045WTPbF 25 500 Antistatic plastic tube VS-MBR3045WT-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 30-Aug-11 www.vishay.com/doc?95223 TO-247AC PbF www.vishay.com/doc?95226 TO-247AC -N3 www.vishay.com/doc?95007 Document Number: 94293 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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