Z ibo Seno Electronic Engineering Co., Ltd. MBR8 40 – MBR8 200 8.0 A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction C Plastic Case Material has UL Flammability K Classification Rating 94V-O TO-220AC L B M D A 1 3 Mechanical Data ! ! ! ! ! E Case: TO-220AC, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Mounting Position: Any Lead Free: For RoHS / Lead Free Version G J N H P PIN 1 + + PIN 3 - Case Dim Min Max A 14.22 15.88 B 9.57 10.57 C 2.54 3.43 D 5.80 6.80 E ¾ 6.35 G 12.70 14.73 H 4.88 5.28 J 0.51 1.14 K 3.53Æ 4.14Æ L 3.56 4.83 M 1.07 1.47 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TL = 100°C MBR 880 MBR 8100 MBR 8150 MBR 8200 Units 50 60 80 100 150 200 V VR(RMS) 28 31 35 42 56 70 105 140 V IO @IF = 8A V FM @TA = 25°C @TA = 100°C IRM Operating and Storage Temperature Range MBR 860 45 Forward Voltage Typical Thermal Resistance (Note 1) MBR 850 40 IFSM Typical Junction Capacitance (Note 2) MBR 845 VRRM VRWM VR Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Peak Reverse Current At Rated DC Blocking Voltage MBR 840 Cj 8. 0 A 100 0.85 0.80 0.70 0.92 0.1 20 350 RJA V mA 280 3.5 Tj, TSTG A 120 -65 to +150 200 pF 2.0 °C/W °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MBR840 – MBR8200 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 150 10.0 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT AMPERES MBR8 40 – MBR8 200 = 40-100V = 150-200V 8.0 6.0 4.0 2.0 0 0 20 40 60 80 100 120 140 160 180 120 8.3ms Single Half Since-Wave JEDEC Method 80-200V 110 90 70 40-60V 50 30 20 10 CASE TEMPERATURE, OC 2 1 5 10 20 50 100 NO. OF CYCLE AT 60Hz Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT Fig.1- FORWARD CURRENT DERATING CURVE 40 1.0 INSTANTANEOUS FORWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT, mA 10 T J =100 O C T J = 75 O C 0.1 T J = 25 O C .01 .001 0 20 40 60 80 100 120 50V~60V 80V~100V 2 1.0 .8 .6 .4 150V~200V .2 .6 .7 .8 .9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%) Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Fig.3- TYPICAL REVERSE CHARACTERISTICS MBR840 – MBR8200 10 8 6 4 .1 .5 140 40V~45V 2 of 2 www.senocn.com Alldatasheet