ON MBRB20H100CTT4G Switchmode power rectifier 100 v, 20 a Datasheet

MBR20H100CT,
MBRB20H100CT,
MBRF20H100CT
SWITCHMODE™
Power Rectifier
100 V, 20 A
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
Features and Benefits
•
•
•
•
•
•
•
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
Pb−Free Packages are Available
1
2, 4
3
MARKING
DIAGRAMS
4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
TO−220AB
CASE 221A
STYLE 6
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately):
•
•
1
2
AYWW
B20H100G
AKA
3
1.9 Grams (TO−220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
B20H100G
AKA
1
ISOLATED TO−220
CASE 221D
STYLE 3
2
MAXIMUM RATINGS
3
Please See the Table on the Following Page
4
1
2
D2PAK
CASE 418B
STYLE 3
AY
WW
B20H100G
AKA
3
A
Y
WW
B20H100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
Publication Order Number:
MBR20H100CT/D
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 162°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 160°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
250
A
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
200
mJ
> 400
> 8000
V
Operating Junction Temperature (Note 1)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR20H100CT and MBRB20H100CT)
(MBRF20H100CT)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
RqJC
RqJA
RqJC
2.0
60
2.5
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
V
0.77
0.64
0.88
0.73
mA
6.0
0.0045
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Package Type
Shipping †
TO−220
50 Units / Rail
MBR20H100CTG
TO−220
(Pb−Free)
50 Units / Rail
MBRF20H100CTG
TO−220FP
(Pb−Free)
50 Units / Rail
MBRB20H100CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
Device Order Number
MBR20H100CT
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
1.0
0.8
1.2
1.0E−01
IR, REVERSE CURRENT (AMPS)
1.0E−01
1.0E−02
TJ = 150°C
1.0E−02
TJ = 150°C
1.0E−03
1.0E−03
TJ = 125°C
1.0E−04
TJ = 125°C
1.0E−04
1.0E−05
1.0E−05
1.0E−06
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−07
1.0E−07
1.0E−08
0
20
40
60
80
100
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
20
dc
15
SQUARE WAVE
10
5
110
1.0E−08
0
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
0.6
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
0
100
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
120
130
140
150
160
170
180
16
14
12
SQUARE
10
DC
8
6
4
2
0
0
5
10
15
20
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
100
25
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
10
0
20
40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
100
D = 0.5
10
0.2
0.1
1
0.05
P(pk)
0.01
t1
0.1
0.01
0.000001
0.00001
0.0001
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT and MBRB20H100CT
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case for MBR20H100CT and MBRB20H100CT
http://onsemi.com
4
1000
R(t), TRANSIENT THERMAL RESISTANCE
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
10
D = 0.5
1
0.1
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
S1
ID
ID
IL
DUT
VDD
t0
Figure 11. Test Circuit
t1
t2
t
Figure 12. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
–V
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
C
E
−B−
4
1
2
3
K
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
W
H
M
T B
M
N
R
P
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
U
L
M
V
W
A
S
−T−
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
PACKAGE DIMENSIONS
TO−220
PLASTIC
CASE 221A−09
ISSUE AB
−T−
B
F
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
C
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
STYLE 6:
PIN 1.
2.
3.
4.
D
N
TO−220 FULLPAK
CASE 221D−03
ISSUE G
−T−
−B−
F
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.020
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
SEATING
PLANE
C
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
ANODE
CATHODE
ANODE
CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D−01 THRU 221D−02 OBSOLETE, NEW
STANDARD 221D−03.
S
Q
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
0.508
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
INCHES
MIN
MAX
0.625
0.635
0.408
0.418
0.180
0.190
0.026
0.031
0.116
0.119
0.100 BSC
0.125
0.135
0.018
0.025
0.530
0.540
0.048
0.053
0.200 BSC
0.124
0.128
0.099
0.103
0.101
0.113
0.238
0.258
MILLIMETERS
MIN
MAX
15.88
16.12
10.37
10.63
4.57
4.83
0.65
0.78
2.95
3.02
2.54 BSC
3.18
3.43
0.45
0.63
13.47
13.73
1.23
1.36
5.08 BSC
3.15
3.25
2.51
2.62
2.57
2.87
6.06
6.56
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
Y
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MBR20H100CT/D
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