MBRT40020 thru MBRT40040R
Silicon Power
Schottky Diode
VRRM = 20 V - 100 V
IF = 400 A
Features
• High Surge Capability
• Types up to 100 V VRRM
Three Tower Package
• Isolation Type Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRT40020 (R) MBRT40030 (R) MBRT40035 (R) MBRT40040 (R) Unit
Parameter
Symbol
Repetitive
p
p
peak reverse voltage
g
VRRM
20
30
35
40
V
RMS reverse voltage
VRMS
14
21
25
28
V
DC blocking voltage
VDC
40
V
20
30
35
Continuous forward current
IF
TC ≤ 100 °C
400
400
400
400
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
3000
3000
3000
3000
A
Operating temperature
Storage temperature
Tj
Tstg
-40 to 150
-40 to 175
-40 to 150
-40 to 175
-40 to 150
-40 to 175
-40 to 150
-40 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Diode forward voltage
VF
Reverse current
IR
IF = 200 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
Parameter
MBRT40020 (R) MBRT40030(R) MBRT40035 (R) MBRT40040 (R) Unit
0.75
1
20
0.75
1
20
0.75
1
20
0.75
1
20
0.14
0.14
0.14
0.14
V
mA
Thermal characteristics
Thermal resistance, junction case
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RthJC
1
°C/W
MBRT40020 thru MBRT40040R
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2