MBRT50045 thru MBRT500100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 500 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRT50045(R) MBRT50060(R) MBRT50080(R) MBRT500100(R) Unit
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
56
70
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
45
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current (per
pkg)
IF(AV)
TC =125 °C
500
500
500
500
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
3500
3500
3500
3500
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 250 A, Tj = 25 °C
0.75
0.78
0.84
0.84
V
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.30
0.30
0.30
0.30
°C/W
Parameter
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
MBRT50045(R) MBRT50060(R) MBRT50080(R) MBRT500100(R) Unit
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
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MBRT50045 thru MBRT500100R
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MBRT50045 thru MBRT500100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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