MC74HC1G32 Single 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G32 output drive current is 1/2 compared to MC74HC series. • • • • • • http://onsemi.com High Speed: tPD = 7 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 A (Max) at TA = 25C MARKING DIAGRAMS High Noise Immunity 5 Balanced Propagation Delays (tpLH = tpHL) 1 Symmetrical Output Impedance (IOH = IOL = 2 mA) H4d SC70–5/SC–88A/SOT–353 DF SUFFIX CASE 419A Chip Complexity: FET = 44 Pin 1 5 IN B IN A 1 5 H4d 1 VCC SOT23–5/TSOP–5/SC59–5 DT SUFFIX CASE 483 2 Pin 1 d = Date Code GND 3 4 OUT Y PIN ASSIGNMENT 1 Figure 1. Pinout ≥1 IN A IN B OUT Y IN B 2 IN A 3 GND 4 OUT Y 5 VCC FUNCTION TABLE Figure 2. Logic Symbol Inputs Output A B Y L L H H L H L H L H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 7 1 Publication Order Number: MC74HC1G32/D MC74HC1G32 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage 0.5 to 7.0 V VIN DC Input Voltage 0.5 to VCC 0.5 V VOUT DC Output Voltage 0.5 to VCC 0.5 V IIK DC Input Diode Current 20 mA IOK DC Output Diode Current 20 mA IOUT DC Output Sink Current 12.5 mA ICC DC Supply Current per Supply Pin 25 mA TSTG Storage Temperature Range 65 to 150 C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 C TJ Junction Temperature Under Bias JA Thermal Resistance PD Power Dissipation in Still Air at 85C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) 2000 200 N/A V ILATCH–UP Latch–Up Performance Above VCC and Below GND at 125C (Note 5) 500 mA 150 C SC70–5/SC–88A/SOT–353 (Note 1) SOT23–5/TSOP–5/SC59–5 350 230 C/W SC70–5/SC–88A/SOT–353 SOT23–5/TSOP–5/SC59–5 150 200 mW Level 1 Oxygen Index: 28 to 34 UL 94 V–0 @ 0.125 in Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 20 ounce copper trace with no air flow. 2. Tested to EIA/JESD22–A114–A. 3. Tested to EIA/JESD22–A115–A. 4. Tested to JESD22–C101–A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 2.0 6.0 V VIN DC Input Voltage 0.0 VCC V VOUT DC Output Voltage TA Operating Temperature Range tr , tf Input Rise and Fall Time 0.0 VCC V 55 125 C 0 0 0 0 1000 600 500 400 ns VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80C 117.8 TJ = 90C 1,032,200 TJ = 100C 80 TJ = 110C Time, Years TJ = 120C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74HC1G32 DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions (V) Min VIH Minimum High–Level Input Voltage 2.0 3.0 4.5 6.0 1.5 2.1 3.15 4.20 VIL Maximum Low–Level Input Voltage 2.0 3.0 4.5 6.0 VOH Minimum High–Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = –20 A VIN = VIH or VIL IOH = –2 mA IOH = –2.6 mA VOL Maximum Low–Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 20 A TA 85C TA = 25C Typ Max Min 55C TA 125C Max Min 1.5 2.1 3.15 4.20 0.5 0.9 1.35 1.80 Max 1.5 2.1 3.15 4.20 0.5 0.9 1.35 1.80 V 0.5 0.9 1.35 1.80 2.0 3.0 4.5 6.0 1.9 2.9 4.4 5.9 2.0 3.0 4.5 6.0 1.9 2.9 4.4 5.9 1.9 2.9 4.4 5.9 4.5 6.0 4.18 5.68 4.31 5.80 4.13 5.63 4.08 5.58 Unit V V 2.0 3.0 4.5 6.0 0.0 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VIN = VIH or VIL IOL = 2 mA IOL = 2.6 mA 4.5 6.0 0.17 0.18 0.26 0.26 0.33 0.33 0.40 0.40 V IIN Maximum Input Leakage Current VIN = 6.0 V or GND 6.0 0.1 1.0 1.0 A ICC Maximum Quiescent Supply Current VIN = VCC or GND 6.0 1.0 10 40 A AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns) ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ TA 85C TA = 25C Symbol Parameter Test Conditions tPLH, tPHL Maximum Propagation Delay Delay, Input A or B to Y tTLH, tTHL Output Transition Time CIN Maximum Input Capacitance CPD Power Dissipation Capacitance (Note 6) Min Typ Max Min 55C TA 125C Max Min Max Unit ns VCC = 5.0 V CL = 15 pF 3.5 15 20 25 VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V CL = 50 pF 20 12 8 7 100 27 20 17 125 35 25 21 155 90 35 26 VCC = 5.0 V CL = 15 pF 3 10 15 20 VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V CL = 50 pF 25 16 11 9 125 35 25 21 155 45 31 26 200 60 38 32 5 10 10 10 ns pF Typical @ 25C, VCC = 5.0 V 10 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74HC1G32 tr tf INPUT 90% 50% 10% INPUT A or B OUTPUT VCC CL* GND tPHL tPLH 90% 50% 10% OUTPUT Y tTLH *Includes all probe and jig capacitance. A 1–MHz square input wave is recommended for propagation delay tests. tTHL Figure 4. Switching Waveforms Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Package Suffix Tape and Reel Suffix Package Type (Name/SOT#/ Common Name) Tape and Reel Size 32 DF T1 SC70–5/SC–88A/ SOT–353 178 mm (7 in) 3000 Unit HC1G 32 DF T2 SC70–5/SC–88A/ SOT–353 178 mm (7 in) 3000 Unit HC1G 32 DT T1 SOT23–5/TSOP–5/ SC59–5 178 mm (7 in) 3000 Unit Logic Circuit Indicator Temp Range Identifier Technology Device Function MC74HC1G32DFT1 MC 74 HC1G MC74HC1G32DFT2 MC 74 MC74HC1G32DTT1 MC 74 Device Order Number http://onsemi.com 4 MC74HC1G32 CAVITY TAPE TOP TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN COMPONENTS TAPE LEADER NO COMPONENTS 400 mm MIN DIRECTION OF FEED Figure 6. Tape Ends for Finished Goods TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 0.50 8.00 0.30 1.00 MIN DIRECTION OF FEED Figure 7. DFT1 Reel Configuration/Orientation TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 0.50 8.00 0.30 1.00 MIN DIRECTION OF FEED Figure 8. DFT2/DTT1 Reel Configuration/Orientation http://onsemi.com 5 MC74HC1G32 t MAX 1.5 mm MIN (0.06 in) A 13.0 mm 0.2 mm (0.512 in 0.008 in) 50 mm MIN (1.969 in) 20.2 mm MIN (0.795 in) FULL RADIUS G Figure 9. Reel Dimensions REEL DIMENSIONS Tape Size T and R Suffix A Max G t Max 8 mm T1, T2 178 mm (7 in) 8.4 mm, 1.5 mm, 0.0 (0.33 in 0.059 in, 0.00) 14.4 mm (0.56 in) DIRECTION OF FEED BARCODE LABEL POCKET Figure 10. Reel Winding Direction http://onsemi.com 6 HOLE MC74HC1G32 PACKAGE DIMENSIONS SC70–5/SC–88A/SOT–353 DF SUFFIX 5–LEAD PACKAGE CASE 419A–01 ISSUE E A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. V 5 DIM A B C D G H J K N S V 4 –B– S 1 2 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 J C K H ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 1.9 mm http://onsemi.com 7 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 MC74HC1G32 PACKAGE DIMENSIONS SOT23–5/TSOP–5/SC59–5 DT SUFFIX 5–LEAD PACKAGE CASE 483–01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. D S 5 4 1 2 3 B L DIM A B C D G H J K L M S G A J C 0.05 (0.002) H M K ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.039 1.0 0.028 0.7 inches mm ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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