MCC 225 MCD 225 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 400 A ITAVM = 2x 221 A VRRM = 1200-1800 V 3 VRSM VRRM VDSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 225-12io1 225-14io1 225-16io1 225-18io1 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 òi2dt (di/dt)cr Maximum Ratings 400 221 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 8000 8500 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 7000 7700 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 320 000 300 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 245 000 246 000 A2s A2s TVJ = TVJM f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, diG/dt = 1 A/ms repetitive, IT = 750 A 100 A/ms non repetitive, IT = ITAVM 500 A/ms 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins ● ● ● V/ms PGM TVJ = TVJM IT = ITAVM PGAV VRGM 120 60 20 10 W W W V TVJ TVJM Tstg -40...+130 130 -40...+125 °C °C °C 3000 3600 V~ V~ Weight 3 ● 1000 Md 4 ● TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) 50/60 Hz, RMS IISOL £ 1 mA 5 1 MCD 225-12io1 MCD 225-14io1 MCD 225-16io1 MCD 225-18io1 (dv/dt)cr VISOL 76 2 tP = 30 ms tP = 500 ms t = 1 min t=1s Mounting torque (M6) Terminal connection torque (M8) Typical including screws ● Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches ● ● ● ● ● Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits ● 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 225 MCD 225 Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C 1.40 V VT0 rT For power-loss calculations only (TVJ = 130°C) 0.8 0.76 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 40 TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM QS IRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms RthJK dS dA a 1: IGT, TVJ = 130 140°C mA V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 6 2 5 1 1 4 4: PGM = 20 W 5: PGM = 60 W IGD, TVJ = 130 140°C tgd RthJC 10 0.1 10-3 mA 2 ms 200 ms 550 235 mC A 10-2 6: PGM = 120 W 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics per thyristor (diode); DC current per module per thyristor (diode); DC current per module other values see Fig. 8/9 Creeping distance on surface Creepage distance in air Maximum allowable acceleration typ. 0.157 0.08 0.197 0.1 K/W K/W K/W K/W 12.7 mm 9.6 mm 50 m/s2 100 TVJ = 25°C µs tgd typ. Limit 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 0.01 0.1 A 1 10 IG Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD M8x20 © 2000 IXYS All rights reserved M8x20 2-4 MCC 225 MCD 225 106 8000 ITSM 50 Hz 80 % VRRM TVJ = 45°C TVJ = 130°C A 6000 400 ITAVM A IFAVM I2dt DC 180° sin 120° 60° 30° A2s 300 TVJ = 45°C TVJ = 130°C 105 4000 200 100 2000 0 0.001 104 0.01 s 0.1 1 0 1 ms t t Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) 400 Ptot RthKA K/W W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 300 10 0 25 50 75 100 125 °C 150 TC Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) 200 DC 180° sin 120° 60° 30° 100 0 0 100 200 300 A 0 ITAVM/IFAVM 25 50 75 100 125 °C 150 TA 2000 Ptot W RthKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 Circuit B6 3xMCC225 3xMCD225 500 0 0 200 400 600 A IdAVM © 2000 IXYS All rights reserved 0 25 50 75 100 125 °C 150 TA 3-4 MCC 225 MCD 225 Ptot 2000 W Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 1000 Circuit W3 3xMCC225 or 3xMCD225 500 0 0 100 200 300 400 A 0 25 50 75 100 125 °C 150 IRMS TA 0.25 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 RthJC for various conduction angles d: d 0.15 DC 180° 120° 60° 30° 30° 60° 120° 180° DC 0.10 0.05 0.157 0.168 0.177 0.200 0.243 Constants for ZthJC calculation: i 0.00 10-3 RthJC (K/W) 10-2 10-1 100 101 s 102 t 0.30 1 2 3 4 Rthi (K/W) ti (s) 0.0076 0.0406 0.0944 0.0147 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W ZthJK 0.25 RthJK for various conduction angles d: 0.20 d DC 180° 120° 60° 30° 0.15 30° 60° 120° 180° DC 0.10 0.05 0.00 10-3 RthJK (K/W) 0.197 0.208 0.217 0.240 0.283 Constants for ZthJK calculation: i 10 -2 -1 10 0 10 1 10 s t © 2000 IXYS All rights reserved 2 10 1 2 3 4 5 Rthi (K/W) ti (s) 0.0076 0.0406 0.0944 0.0147 0.04 0.00054 0.098 0.54 12 12 4-4