MCH6342 Ordering number : ENA1553 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6342 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±10 V V Drain Current (DC) ID --4.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --18 A Allowable Power Dissipation PD When mounted on ceramic substrate (1500mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=--30V, VGS=0V VGS=±8V, VDS=0V Cutoff Voltage VGS(off) | yfs | VDS=--10V, ID=--1mA RDS(on)1 ID=--2A, VGS=--4.5V 56 73 mΩ RDS(on)2 ID=--1A, VGS=--2.5V 71 99 mΩ RDS(on)3 ID=--0.3A, VGS=--1.8V 95 155 mΩ Forward Transfer Admittance Static Drain-to-Source On-State Resistance VDS=--10V, ID=--2A Marking : YR --30 Unit V --0.4 3.4 --1 μA ±10 μA --1.3 5.8 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network 93009PE TK IM TC-00002128 No. A1553-1/4 MCH6342 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 650 pF 105 pF Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz 83 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.2 ns Rise Time tr td(off) See specified Test Circuit. 28 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge See specified Test Circuit. 100 tf Qg See specified Test Circuit. 60 ns VDS=--15V, VGS=--4.5V, ID=--4.5A 8.6 nC 1.3 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--15V, VGS=--4.5V, ID=--4.5A VDS=--15V, VGS=--4.5V, ID=--4.5A Diode Forward Voltage VSD IS=--4.5A, VGS=0V Package Dimensions 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 ID -- VDS S V VDS= --10V --4.5 VGS= --1.2V --1 --3.0 --2.5 --1.5 --1.0 --0.5 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT14987 0 0 --0.5 --1.0 C --2.0 25° --2 --3.5 5°C --1.5V --25 °C Drain Current, ID -- A --4.0 --3 0 CPH6342 ID -- VGS --5.0 --1 .8V --2. 5 --8.0V --4 .5V 50Ω Ta= 7 0.25 P.G 0.3 0.85 0.07 Drain Current, ID -- A G 3 --5 --4 D PW=10μs D.C.≤1% 0 t o 0.02 2 ID= --2A RL=7.5Ω VOUT VIN 4 0.65 V VDD= --15V VIN 0.15 2.1 1.6 0.25 2.0 1 --1.2 Switching Time Test Circuit 0V --4.5V 5 nC --0.83 unit : mm (typ) 7022A-009 6 2.4 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V IT14988 No. A1553-2/4 MCH6342 RDS(on) -- VGS 300 RDS(on) -- Ta 180 --1.0A --2.0A 200 150 100 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 25 °C 7 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 7 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT14990 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 5 7 --10 IT14991 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT14992 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --4.5V 5 f=1MHz 2 3 2 td(off) 100 7 1000 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 60 3 2 Drain Current, ID -- A tf 5 3 2 3 2 3 5 7 --0.1 2 3 7 5 7 --1.0 2 VGS -- Qg 3 3 5 7 --10 IT14993 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --10 7 5 ID= --4.5A 0 5 6 Total Gate Charge, Qg -- nC 7 8 9 IT14995 --10 --14 --12 DC --16 tio 3 2 --20 IT14994 ms 10 era --18 PW≤10μs 100 μ 1m s s 10 op --1.0 7 5 3 2 4 --8 3 2 --0.5 3 --6 ASO IDP= --18A --1.0 2 --4 3 2 --0.1 7 5 1 --2 5 --3.5 0 0 Drain-to-Source Voltage, VDS -- V VDS= --15V ID= --4.5A --4.0 Crss 5 Drain Current, ID -- A --4.5 Coss 100 td(on) 2 Ciss 5 tr 10 7 5 --0.01 Gate-to-Source Voltage, VGS -- V 80 --10 7 5 7 °C -25 =a T °C 75 100 Ambient Temperature, Ta -- °C 10 2 A --0.3 I D= , V A 1.8 = ---1.0 I D= VGS , A V .5 --2.0 = --2 I D= , V VGS .5 = --4 VGS 120 10 --60 --10 VDS= --10V 3 140 IT14989 | yfs | -- ID 2 --9 160 Ta=7 5°C 25°C --25°C 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID= --0.3A 0m s n( Ta =2 5° C Operation in this area is limited by RDS(on). ) Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT14996 No. A1553-3/4 MCH6342 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (1500mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14997 Note on usage : Since the MCH6342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1553-4/4