Order this document by MGP7N60E/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device. • • • • • • IGBT IN TO–220 9.0 A @ 90°C 10 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE Industry Standard TO–220 Package High Speed: Eoff = 60 mJ/A typical at 125°C High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V Low On–Voltage 2.0 V typical at 5.0 A, 125°C Robust High Voltage Termination ESD Protection Gate–Emitter Zener Diodes C G C G E CASE 221A–09 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM 10 7.0 14 Adc PD 81 0.65 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJA 1.5 65 °C/W 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw TL Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. IGBT Motorola Motorola, Inc. 1997 Device Data 1 MGP7N60E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 600 — — 870 — — mV/°C 15 — — Vdc — — — — 10 200 — — 50 — — — 1.6 1.5 2.0 1.9 — 2.4 4.0 — 6.0 10 8.0 — mV/°C gfe — 2.5 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc mAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 2.5 Adc) (VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Cies — 610 — Coes — 60 — Cres — 10 — td(on) — 22 — tr — 24 — td(off) — 64 — tf — 196 — Eoff — 0.20 0.34 mJ td(on) — 31 — ns tr — 24 — td(off) — 195 — tf — 220 — Eoff — 0.38 — mJ QT — 27.2 — nC Q1 — 7.0 — Q2 — 13.7 — — 7.5 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 5 5.0 0 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH H, RG = 20 Ω, TJ = 25 25°C) C) Energy losses include “tail” Turn–Off Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 360 Vdc, Vd IC = 5 5.0 0 Ad Adc, Vd L = 300 mH VGE = 15 Vdc, H, RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Turn–Off Switching Loss Gate Charge (VCC = 360 Vdc, Vdc IC = 5 5.0 0 Adc Adc, VGE = 15 Vdc) ns INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGP7N60E 20 TJ = 25°C 15 12.5 V 10 VGE = 10 V 5 0 1 2 3 4 5 6 7 15 12.5 V 10 VGE = 10 V 5 8 3 4 5 6 7 Figure 2. Output Characteristics 8 6 TJ = 125°C 4 25°C 2 0 6 7 8 10 9 12 11 IC = 5.0 A 2.0 3.75 A 1.8 2.5 A 1.6 1.4 VGE = 15 V 80 mS PULSE WIDTH 1.2 1.0 –50 –25 25 0 50 75 100 125 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. VCE versus Junction Temperature VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) VGE = 0 V TJ = 25°C 1000 Cies 800 600 400 Coes 200 Cres 0 5 10 15 20 25 150 20 16 QT 12 Q1 Q2 8 TJ = 25°C IC = 5.0 A 4 0 0 5 10 15 20 25 30 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. VGE versus Total Charge Motorola IGBT Device Data 8 2.2 13 1200 0 2 Figure 1. Output Characteristics VCE = 100 V 5 mS PULSE WIDTH 5 1 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE(on), COLLECTOR–TO–EMITTER ON–STATE VOLTAGE (VOLTS) 10 0 VCE(on), COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 12 IC , COLLECTOR CURRENT (AMPS) 15 V TJ = 125°C 0 0 C, CAPACITANCE (pF) 17.5 V 20 V 15 V IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 20 17.5 V 20 V 35 3 MGP7N60E 0.5 VCC = 360 V VGE = 15 V TJ = 125°C 0.4 Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) 0.5 IC = 5.0 A 0.3 3.75 A 0.2 2.5 A 0.1 10 15 20 25 30 35 40 45 0.3 3.75 A 0.2 2.5 A 0.1 0 50 25 50 75 100 125 GATE RESISTANCE (W) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Turn–Off Losses versus Gate Resistance Figure 8. Turn–Off Losses versus Junction Temperature 0.6 150 100 VCC = 360 V VGE = 15 V RG = 20 W TJ = 125°C 0.5 0.4 IC , COLLECTOR CURRENT (AMPS) Eoff , TURN–OFF ENERGY LOSSES (mJ) IC = 5.0 A 0 0 0.3 0.2 0.1 10 VGE = 15 V RGE = 20 W TJ = 125°C 1 0 0 4 VCC = 360 V VGE = 15 V RG = 20 W 0.4 1 2 3 4 5 6 7 8 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 9. Turn–Off Energy Losses versus Collector Current Figure 10. Reverse Biased Safe Operating Area 1000 Motorola IGBT Device Data MGP7N60E PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 GATE COLLECTOR EMITTER COLLECTOR CASE 221A–09 TO–220AB ISSUE Z Motorola IGBT Device Data 5 MGP7N60E Motorola reserves the right to make changes without further notice to any products herein. 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