DIODES MIMD10A-7-F

SPICE MODELS: MIMD10A
MIMD10A
DUAL PRE-BIASED TRANSISTORS
FOR POWER MANAGEMENT
NEW PRODUCT
Features
·
·
·
·
Epitaxial Planar Die Construction
A
Built-In Biasing Resistors
C2
SOT-363
B1
E1
One 500mA PNP and One 100mA NPN
B C
Lead Free/RoHS Compliant (Note 1)
Mechanical Data
E2
B2
C1
G
H
·
·
·
·
·
Case: SOT-363
·
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
·
·
·
·
Marking Code: C73 (See Page 2)
Case material - Molded PLastic. UL Flammability
K
Rating 94V-0
M
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Finish - Solderable per MIL-STD-202, Method
208
J
D
L
F
Ordering & Date Code: See Page 2
R1
Tr1
Tr2
Max
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
R1 R
2
Tr2
Weight: 0.015 grams (approx.)
P/N
Min
A
All Dimensions in mm
Terminal Connections: See Diagram
MIMD10A
Dim
R1
R2
0.1K
10K
10K
-
Maximum Ratings PNP Section Tr1
Characteristic
Tr1
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Symbol
Value
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-5 to +5
V
Output Current
IO
-500
mA
Maximum Ratings NPN Section Tr2
Characteristic
Unit
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
IC
100
mA
Symbol
Value
Unit
Pd
200
mW
Tj, TSTG
-55 to +150
°C
Collector Current
Maximum Ratings - Total
@ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 2)
Operating and Storage Temperature Range
Note:
1. No purposefully added lead.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30381 Rev. 6 - 2
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MIMD10A
ã Diodes Incorporated
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Vl(off)
-0.3
¾
¾
Vl(on)
¾
¾
-1.5
VO(on)
¾
-0.1
-0.3
V
Input Voltage
Output Voltage
Output Current
Unit
V
Test Condition
VCC = -5V, IO = -100mA
VO = 0.3, IO = -100mA
IO = -100mA/-5mA
Il
¾
¾
-25
mA
VI = -2V
IO(off)
¾
¾
-0.5
mA
VCC = -50V, VI = 0V
Gl
68
¾
¾
¾
Input Current
DC Current Gain
¾
fT
Gain-Bandwidth Product*
¾
200
MHz
¾
VCE = -10V, IE = -50mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
¾
¾
V
IC = 50mA
Collector-Emitter Breakdown Voltage
BVCEO
50
¾
¾
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
¾
¾
V
IE = 50mA
ICBO
¾
¾
0.5
mA
VCB = 50V
Collector Cutoff Current
IEBO
¾
¾
0.5
mA
VCE(sat)
¾
¾
0.3
V
DC Current Transfer Ratio
hFE
100
250
600
¾
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
¾
250
¾
MHz
VCE = 10V, IE = -5mA, f = 100MHz
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
VEB = 4V
IC/IB = 10mA / 1.0mA
* Transistor - For Reference Only
Ordering Information
(Note 3)
Device
Packaging
Shipping
MIMD10A-7-F
SOT-363
3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
C73
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
YM
NEW PRODUCT
Electrical Characteristics PNP Section Tr1
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
Code
P
R
S
T
U
V
W
X
Y
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30381 Rev. 6 - 2
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MIMD10A
1
VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V)
PD, POWER DISSIPATION (MILLIWATTS)
(TOTAL PACKAGE)
250
200
150
100
50
0
-50
0
50
100
IC/IB = 10
0.1
75° C
-25° C
25° C
0.01
0.001
150
10
0
-25° C
50
IE = 0mA
25° C
100
40
30
4
VCE = 10
75° C
COB, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
1000
20
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (° C)
Fig. 1 Derating Curve
10
3
2
1
0
0
1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
10
5
100
15
30
25
20
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
100
10
75°C
VO = 0.2
25°C
10
-25°C
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
NEW PRODUCT
TYPICAL CURVES - Tr2
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
-25°C
25°C
1
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
DS30381 Rev. 6 - 2
75° C
1
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0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
MIMD10A
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30381 Rev. 6 - 2
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MIMD10A