INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD6039 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) ·High DC Current Gain: hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 0.1 A Collector Power Dssipation TC=25℃ 20 Collector Power Dissipation Ta=25℃ 1.75 Junction Temperature 150 ℃ -65~150 ℃ PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD6039 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2 A ;IB= 8mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 2A ;VCE= 4V 2.8 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 10 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 1 A ; VCE= 4V 1000 hFE-2 DC Current Gain IC= 2A ; VCE= 4V 500 COB Output Capacitance IE= 0; VCB= 10V; ftest = 1.0MHz 100 pF isc website：www.iscsemi.com CONDITIONS 2 MIN MAX 80 UNIT V isc & iscsemi is registered trademark