SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A B D C E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A High Collector Voltage : VCBO=900V. H DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 L ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage VCEO 530 V Emitter-Base Voltage VEBO 9 V DC IC 1.5 Pulse ICP 3 Base Current IB 0.75 A Collector Power Dissipation (Tc=25 ) PC 20 W Junction Temperature Tj 150 Tstg -55 150 Collector Current Storage Temperature Range M O N 1 2 P 3 1. EMITTER 2. COLLECTOR 3. BASE MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX A TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL IEBO Emitter Cut-off Current hFE(1) *hFE(2) DC Current Gain hFE(3) Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage Collector Output Capacitance Cob TEST CONDITION MIN. TYP. MAX. UNIT - - 10 A VCE=10V, IC=10 A 15 - 40 VCE=10V, IC=0.4A 20 - 40 VCE=10V, IC=1A 6 - - IC=0.5A, IB=0.1A - - 0.8 IC=1.5A, IB=0.5A - - 2.5 IC=0.5A, IB=0.1A - - 1 IC=1A, IB=0.25A - - 1.2 VCB=10V, f=0.1MHz, IE=0 - 21 - pF 4 - - MHz - 1.1 - S - 3.0 - S - 0.7 - S VEB=9V, IC=0 Transition Frequency fT VCE=10V, IC=0.1A Turn-On Time ton 300µS tf *Note : hFE Classification R:20 2008. 5. 6 I B1 125Ω IB1 IB2 Fall Time V OUTPUT INPUT tstg Storage Time V IB1=I B2 =0.2A DUTY CYCLE < = 2% I B2 VCC =125V 35, O:25 40 Revision No : 2 1/2 MJE13003HV DC CURRENT GAIN 100 2.0 1.8 Ib=500mA Ib=400mA Ib=300mA 1.2 Ib=200mA Ib=100mA 0.8 Ib=50mA 0.4 1 2 3 4 1 0.01 5 0.1 1 10 COLLECTOR CURRENT IO (A) VCE(sat) vs. VBE(sat) SWITCHING TIME 100 10 Tstg, Tf(µS), TIME IC=4Ib VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 1 tstg 10 1 tf 0.1 0.1 10 1 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) SAFE OPERATING AREA PC - Ta 1.25 POWER DISSIPATION PC (W) 10 COLLETOR CURRENT IC (A) 10 COLLECTOR EMITTER VOLTAGE VCE (V) 100 Ic max (Pulse) Ic max (DC) 5m 1 1m s s 10µs 10 0µ s 0.1 0.01 1 10 100 1000 COLLECTOR EMITTER VOLTAGE VCE (V) 2008. 5. 6 VCE=10V Ib=0mA 0 0 SATURATION VOLTAGE VBE(sat), VCE(sat) (V) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) STATIC CHARACTERIC Revision No : 2 Tc=Ta INFINITE HEAT SINK 1.1 1 0.75 0.5 0.25 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) 2/2