isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172 APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE MJE5180 120 MJE5181 140 MJE5182 160 MJE5180 120 MJE5181 140 MJE5182 160 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A Base Current-Continuous 2 A IB B PC PC TJ Tstg Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ 65 W 2 150 ℃ -65~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJE5180 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5181 MIN MAX UNIT 120 IC= 30mA ;IB= 0 B MJE5182 V 140 160 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 1.5 V VBE(on) Base-Emitter On Voltage IC= 6A; VCE= 4V 2.0 V MJE5180 VCE= 60V; IB= 0 0.7 MJE5181 VCE= 70V; IB= 0 0.7 MJE5182 VCE= 80V; IB= 0 0.7 MJE5180 VCE= 120V;VEB= 0 0.4 MJE5181 VCE= 140V;VEB= 0 0.4 MJE5182 VCE= 160V;VEB= 0 0.4 1.0 ICEO ICES Collector Cutoff Current Collector Cutoff Current B B B B IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.3A; VCE= 4V 30 hFE-2 DC Current Gain IC= 3A; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V;ftest= 1.0MHz 1.0 fT isc Website：www.iscsemi.cn 2 mA mA mA 100 MHz