MOTOROLA MJF18206 Power transistors 8 amperes 1200 volts 40 and 100 watt Datasheet

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by MJE18206/D
SEMICONDUCTOR TECHNICAL DATA
  $#!%
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POWER TRANSISTORS
8 AMPERES
1200 VOLTS
40 and 100 WATTS
The MJE/MJF18206 have an application specific state–of–the–art die dedicated to
the electronic ballast (“light ballast”) and power supply applications.
• Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
• Two Package Choices: Standard TO–220 or Isolated TO–220
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v
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MAXIMUM RATINGS
Rating
Symbol
MJE18206
MJF18206
Unit
Collector–Emitter Voltage
VCEO
600
Vdc
Collector–Base Voltage
VCBO
1200
Vdc
Collector–Emitter Voltage
VCES
1200
Vdc
Emitter–Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
8
16
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
5
9
Adc
RMS Isolation Voltage (2)
(for 1 sec, R.H. ≤ 30%)
TC = 25°C
Per Figure 22
Per Figure 23
Per Figure 24
*Total Device Dissipation @ TC = 25°C
*Derate above 25_C
Operating and Storage Temperature
VISOL1
VISOL2
VISOL3
PD
TJ, Tstg
100
0.8
4500
3500
1500
Volts
40
0.32
Watt
W/_C
– 65 to 150
CASE 221A–06
TO–220AB
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18206
MJF18206
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.25
62.5
3.125
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TL
260
_C
CASE 221D–02
TO–220 FULLPACK
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
VCER(sus)
VCBO
550
600
630
700
1200
1320
Vdc
VEBO
10
12.9
Vdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
(IC = 200 mA, L = 25 mH, R = 200 Ω)
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IEBO = 1 mA, IC = 0)
Collector Cutoff Current (VCE = 550 V, IB = 0)
Collector Cutoff Current (VCE = 550 V, IB = 0)
@ TC = 25°C
@ TC = 125°C
ICEO
200
2000
µAdc
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
ICES
100
1000
100
µAdc
ICBO
100
µAdc
IEBO
100
µAdc
Collector Cutoff Current (VCE = 1000 V, VBE = 0)
Collector Cutoff Current
(VCB = 1200 V, IE = 0)
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS
VBE(sat)
Base–Emitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
Vdc
@ TC = 25°C
@ TC = 125°C
0.77
0.67
1
0.9
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.85
0.75
1.1
1
(IC = 3 Adc, IB = 0.6 Adc)
@ TC = 25°C
@ TC = 125°C
0.91
0.8
1.1
1
@ TC = 25°C
@ TC = 125°C
0.3
0.4
0.75
1
@ TC = 25°C
@ TC = 125°C
0.4
0.8
0.75
1.25
VCE(sat)
Collector–Emitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
(IC = 3 Adc, IB = 0.6 Adc)
Vdc
hFE
DC Current Gain
(IC = 0.5 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
18
@ TC = 25°C
@ TC = 125°C
18
(IC = 3 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
5
4
(IC = 10 mAdc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
11
(IC = 1 Adc, VCE = 5 Vdc)
—
25
25
45
20
8
6
—
50
—
33
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance (VEB = 8 Vdc)
fT
13
MHz
Cob
200
pF
Cib
2000
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
rising IB1 reaches
90% of final IB1
2
IC = 1.3 Adc
IB1 = 130 mAdc
VCC = 300 V
@ 1 µs
@ TC = 25°C
@ 3 µs
@ TC = 25°C
4.5
IC = 3 Adc
IB1 = 0.6 Adc
VCC = 300 V
@ 1 µs
@ TC = 25°C
14.5
@ 3 µs
@ TC = 25°C
6
VCE(dsat)
7.5
V
Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
IC = 3 Adc, IB1 = 0.6 Adc
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25°C
ton
200
350
ns
@ TC = 25°C
@ TC = 125°C
toff
2
2.5
2.5
µs
IC = 3 Adc, IB1 = 0.6 Adc
IB2 = 0.6 Adc
VCC = 300 Vdc
@ TC = 25°C
ton
190
250
ns
@ TC = 25°C
@ TC = 125°C
toff
3.7
4.5
4.5
µs
300
ns
@ TC = 25°C
td
125
IC = 1 Adc, IB1 = 70 mAdc
IB2 = 1 Adc
VCC = 125 Vdc
PW = 70 µs
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
IC = 1 Adc, IB1 = 100 mAdc
IB2 = 500 mAdc
VCC = 300 Vdc
tr
400
750
ns
ts
600
1.2
µs
tf
450
700
ns
@ TC = 25°C
@ TC = 125°C
ton
250
225
350
ns
@ TC = 25°C
@ TC = 125°C
toff
2
2.5
2.75
µs
@ TC = 25°C
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
150
225
200
ns
@ TC = 25°C
@ TC = 125°C
ts
1.6
1.9
2
µs
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
260
300
350
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
300
400
450
ns
@ TC = 25°C
@ TC = 125°C
ts
2.25
2.5
2.75
µs
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
500
700
800
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
350
500
500
ns
@ TC = 25°C
@ TC = 125°C
ts
4.25
5.1
5
µs
@ TC = 25°C
@ TC = 125°C
tc
600
1100
800
ns
Storage Time
Storage Time
Storage Time
IC = 1.3 Adc
IB1 = 0.13 Adc
IB2 = 0.65 Adc
IC = 3 Adc
IB1 = 0.6 Adc
IB2 = 1.5 Adc
IC = 3 Adc
IB1 = 0.6 Adc
IB2 = 0.6 Adc
Crossover Time
Motorola Bipolar Power Transistor Device Data
3
TYPICAL STATIC CHARACTERISTICS
100
100
TJ = 25°C
VCE = 1 V
TJ = 125°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C
TJ = – 20°C
10
1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
TJ = 25°C
VCE , VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
TJ = – 20°C
TJ = 25°C
VCE(sat)
VCE(sat) (I = 2 A)
C
(IC = 1 A)
7A
5A
4A
1
3A
0
1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
10
100
1000
IB, BASE CURRENT (mA)
10000
Figure 4. Collector Saturation Region
Figure 3. DC Current Gain @ 5 Volts
10
10
IC/IB = 5
IC/IB = 10
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
10
2
VCE = 5 V
TJ = 125°C
1
0.1
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
0.1
TJ = 125°C
TJ = 25°C
TJ = – 20°C
TJ = 125°C
TJ = 25°C
TJ = – 20°C
10
Figure 5A. Collector–Emitter Saturation Voltage
4
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 3 Volts
100
10
VCE = 3 V
TJ = – 20°C
10
1
0.001
10
TJ = 25°C
0.01
0.001
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
10
Figure 5B. Collector–Emitter Saturation Voltage
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
10000
1.5
C, CAPACITANCE (pF)
VBE , VOLTAGE (VOLTS)
TJ = 25°C
f(test) = 1 MHz
1
TJ = – 20°C
TJ = 25°C
0.5
TJ = 125°C
Cib (pF)
1000
Cob (pF)
100
IC/IB = 5
IC/IB = 10
10
0
0.001
0.1
1
0.01
IC, COLLECTOR CURRENT (AMPS)
1
10
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Base–Emitter Saturation Region
Figure 7. Capacitance
1600
8
1400
125°C
6
1000
t, TIME ( µs)
t, TIME (ns)
TJ = 25°C
TJ = 125°C
7
IC/IB = 10
1200
25°C
IC/IB = 5
800
600
IB1 = IB2
VCC = 300 V
PW = 20 µs
IC/IB = 5
5
4
3
400
IB1 = IB2
VCC = 300 V
PW = 20 µs
200
0.5
2
2.5
3
3.5
4
1.5
IC, COLLECTOR CURRENT (AMPS)
1
4.5
IC/IB = 10
2
0
1
5
0.5
Figure 8. Resistive Switching, ton
TJ = 125°C
TJ = 25°C
5
TJ = 125°C
TJ = 25°C
IC/IB = 5
3
3
Figure 10. Inductive Storage Time, tsi
Motorola Bipolar Power Transistor Device Data
4.5
5
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
4
IC = 2 A
2
2
2.5
1.5
IC, COLLECTOR CURRENT (AMPS)
IC = 1 A
5
IC/IB = 10
1
1.5
2
2.5
3
3.5
4
IC, COLLECTOR CURRENT (AMPS)
6
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
4
0.5
1
Figure 9. Resistive Switching, toff
t si , STORAGE TIME (µs)
6
t, TIME (ns)
100
3.5
3
3
5
7
11
9
hFE, FORCED GAIN
13
15
Figure 11. Inductive Storage Time
5
TYPICAL STATIC CHARACTERISTICS
1500
1100
TJ = 125°C
TJ = 25°C
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
t, TIME (ns)
tc
t, TIME (ns)
1000
tfi
tc
500
tc
700
500
300
tfi
0
0
1
2
IC, COLLECTOR CURRENT (AMPS)
tfi
100
3
1
2
3
IC, COLLECTOR CURRENT (AMPS)
0
Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 5
1200
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
t c , CROSSOVER TIME (ns)
480
IC = 2 A
IC = 1 A
280
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
1000
IC = 2 A
800
600
400
80
3
5
7
9
11
hFE, FORCED GAIN
13
IC = 1 A
200
15
3
Figure 14. Inductive Fall Time
5
6
9
10 11
7 8
hFE, FORCED GAIN
12
13
14 15
100
TJ = 25°C
1200
1100
1000
900
800
BVCER(sus) @ 200 mA
700
600
10
100
RBE (Ω)
Figure 16. BVCER = f (RBE)
1000
5 ms
1 ms
10 µs
1 µs
10
1
MJE18206–DC
MJF18206–DC
EXTENDED SOA
IC, COLLECTOR CURRENT (AMPS)
BVCER (VOLTS) @ 10 mA
1300
BVCER (VOLTS)
4
Figure 15. Inductive Crossover Time
1400
6
4
Figure 13. Inductive Switching,
tc & tfi @ IC/IB = 10
680
t fi , FALL TIME (ns)
TJ = 125°C
TJ = 25°C
IB1 = IB2
VCC = 15 V
900 VZ = 300 V
LC = 200 µH
0.1
0.01
1
100
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 17. Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
1.0
TC ≤ 125°C
GAIN ≥ 5
LC = 4 mH
8
POWER DERATING FACTOR
IC, COLLECTOR CURRENT (AMPS)
10
6
4
2
–5 V
0V
0
–1.5 V
600
800
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
1200
SECOND
BREAKDOWN
DERATING
0.8
0.6
0.4
THERMAL
DERATING
0.2
0
20
Figure 18. Reverse Bias Switching Safe
Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 17 is based
on T C = 25°C; T J(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when T C > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 17 may be found at any case temperature by using
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 19. Forward Bias Power Derating
the appropriate curve on Figure 19.
TJ(pk) may be calculated from the data in Figures 22 and
23. At any case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction
reverse biased. The safe level is specified as a reverse–
biased safe operating area (Figure 18). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
TYPICAL SWITCHING CHARACTERISTICS
(IB1 = IB2 FOR ALL CURVES)
10
VCE
9
dyn 1 µs
IC
90% IC
8
dyn 3 µs
tfi
tsi
7
6
0V
Vclamp
5
10% IC
10% Vclamp
tc
4
IB
90% IB
3
1 µs
2
IB
90% IB1
1
2
1
3 µs
0
TIME
0
3
4
5
6
8
7
TIME
Figure 20. Dynamic Saturation
Voltage Measurements
Motorola Bipolar Power Transistor Device Data
Figure 21. Inductive Switching Measurements
7
TYPICAL SWITCHING CHARACTERISTICS
(IB1 = IB2 FOR ALL CURVES)
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
100 Ω
3W
150 Ω
3W
100 µF
MTP8P10
MTP8P10
RB1
MPF930
MUR105
MPF930
+10 V
Iout
A
50 Ω
RB2
MJE210
COMMON
150 Ω
3W
500 µF
MTP12N10
1 µF
–Voff
IC PEAK
VCE PEAK
VCE
IB1
IB
IB2
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
8
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for desired IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for desired IB1
Motorola Bipolar Power Transistor Device Data
TYPICAL THERMAL RESPONSE
(IB1 = IB2 FOR ALL CURVES)
1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
10
RθJC(t) = r(t) RθJC
RθJC = 1.25°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
100
1000
t, TIME (ms)
Figure 22. Typical Thermal Response (ZθJC(t)) for MJE18206
1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.2
P(pk)
0.1
0.1
0.05
t1
t2
DUTY CYCLE, D = t1/t2
0.02
SINGLE PULSE
0.01
0.01
0.1
1
10
100
1000
RθJC(t) = r(t) RθJC
RθJC = 3.55°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
10000
100000
t, TIME (ms)
Figure 23. Typical Thermal Response (ZθJC(t)) for MJF18206
Motorola Bipolar Power Transistor Device Data
9
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
0.107″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
LEADS
HEATSINK
HEATSINK
0.107″ MIN
0.110″ MIN
Figure 24. Clip Mounting Position for
Isolation Test Number 1
Figure 25. Clip Mounting Position
for Isolation Test Number 2
Figure 26. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 27a. Screw–Mounted
Figure 27b. Clip–Mounted
Figure 27. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a
constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
10
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
B
–T–
F
SEATING
PLANE
C
T
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
S
A
Q
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
U
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
–T–
–B–
F
SEATING
PLANE
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
A
1 2 3
H
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
Motorola Bipolar Power Transistor Device Data
11
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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12
◊
Motorola Bipolar Power Transistor Device Data
*MJE18206/D*
MJE18206/D