ASI MLN1037F Npn silicon rf power transistor Datasheet

MLN1037F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG
DESCRIPTION:
A
ØD
The ASI MLN1037F is Designed for
B
.060 x 45°
CHAMFER
C
E
FEATURES:
•
•
• Omnigold™ Metalization System
G
L
10 A
VCB
inches / mm
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
D
.128 / 3.25
140 W @ TC = 25 OC
TJ
-65 OC to +200 OC
TSTG
-65 OC to +150 OC
θ JC
5.5 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
.255 / 6.48
.132 / 3.35
.125 / 3.18
.110 / 2.79
F
35 V
NP
MINIMUM
E
60 V
PDISS
I
K
DIM
.117 / 2.97
.117 / 2.97
G
VCE
J
M
MAXIMUM RATINGS
IC
F
H
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
ORDER CODE: ASI10628
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PGE
VCE = 20 V
POUT = 5.0 W
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 800 mA
f = 1.0 GHz
UNITS
10
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5
mA
100
---
15
pF
dB
REV. A
1/1
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