MM3Z2V2B~MM3Z39B Silicon Planar Zener Diodes Features • Total power dissipation : max. 300 mW • Small plastic package suitable for PINNING PIN surface mounted design • High reliability DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-323 and symbol Description Silicon planar Zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Value Unit Ptot 300 mW Tj 150 O Tstg - 55 to + 150 O Symbol Max. RthA 417 VF 0.9 C C Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Unit C/W O V １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z2V2B~MM3Z39B Characteristics at Ta = 25 OC Zener Voltage Range 1) Type Marking Code VZT ZZT (Max.) at IZT Reverse Leakage Current Vznom lZT V mA V Ω mA μA V 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.1...2.4 2.3…2.65 2.65…2.95 2.95…3.25 3.25…3.55 3.6…3.845 3.89…4.16 4.17…4.43 4.55…4.75 4.98…5.2 5.49…5.73 6.06…6.33 6.65…6.93 7.28…7.6 8.02…8.36 8.85…9.23 9.77…10.21 10.76…11.22 11.74…12.24 12.91…13.49 14.34…14.98 15.85…16.51 17.56…18.35 19.52…20.39 21.54…22.47 23.72…24.78 26.19…27.53 29.19…30.69 32.15…33.79 35.07…36.87 37…41 100 100 110 120 120 100 100 100 100 80 60 60 40 30 30 30 30 30 30 37 42 50 65 85 100 120 150 200 250 300 100 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 120 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2 0.7 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 MM3Z2V2B MF 2.2 MM3Z2V4B 7C 2.4 MM3Z2V7B 7D 2.7 MM3Z3V0B 7E 3.0 MM3Z3V3B 7F 3.3 MM3Z3V6B 7H 3.6 MM3Z3V9B 7J 3.9 MM3Z4V3B 7K 4.3 MM3Z4V7B 7M 4.7 MM3Z5V1B 7N 5.1 MM3Z5V6B 7P 5.6 MM3Z6V2B 7R 6.2 MM3Z6V8B 7X 6.8 MM3Z7V5B 7Y 7.5 MM3Z8V2B 7Z 8.2 MM3Z9V1B 8A 9.1 MM3Z10B 8B 10 MM3Z11B 8C 11 MM3Z12B 8D 12 MM3Z13B 8E 13 MM3Z15B 8F 15 MM3Z16B 8H 16 MM3Z18B 8J 18 MM3Z20B 8K 20 MM3Z22B 8M 22 MM3Z24B 8N 24 MM3Z27B 8P 27 MM3Z30B 8R 30 MM3Z33B 8X 33 MM3Z36B 8Y 36 MM3Z39B 8Z 39 1) VZ is tested with pulses (20 ms). for Dynamic Impedance IR (Max.) at VR ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z2V2B~MM3Z39B Power Dissipation: Ptot (mW) 300 200 100 0 0 25 150 100 Ambient Temperature: Ta ( C) O Derating Curve ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z2V2B~MM3Z39B PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A mm 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E HE 1.35 1.15 2.80 2.30 ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５