MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating Suitable as a low voltage high current driver SOT-23 A C B Mechanical Data · · · · · · · · B TOP VIEW E Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K6D Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) D E G H K J M L C Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm E B Maximum Ratings C Dim @ TA = 25°C unless otherwise specified Symbol MMBT123S Unit Collector-Base Voltage Characteristic VCBO 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 5 V IC 1 A Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30292 Rev. 3 - 2 1 of 3 MMBT123S @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 45 ¾ V Collector-Emitter Breakdown Voltage V(BR)CEO 18 ¾ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ¾ V IE = 100mA, IC = 0 Collector Cutoff Current ICBO ¾ 1 mA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO ¾ 1 mA VEB = 4V, IC = 0 hFE 150 800 ¾ IC = 100mA, VCE = 1V VCE(SAT) ¾ 0.5 V IC = 300mA, IB = 30mA Cobo ¾ 8 pF OFF CHARACTERISTICS (Note 2) IC = 100mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance fT Current Gain-Bandwidth Product ¾ 100 VCB = 10V, f = 1.0MHz, IE = 0 VCB = 10V, IE = 50mA, f = 100MHz MHz Ordering Information (Note 3) Notes: 2. 3. Device Packaging Shipping MMBT123S-7 SOT-23 3000/Tape & Reel Short duration pulse test used to minimize self-heating effect. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6D = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM NEW PRODUCT Electrical Characteristics K6D Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30292 Rev. 3 - 2 2 of 3 MMBT123S 1000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 300 250 200 150 100 100 50 0 0 25 50 75 100 125 150 175 1 0.0001 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature VCE = 1.0V .001 .01 .1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current 1000 100 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) f = 1MHz COBO, OUTPUT CAPACITANCE (pF) NEW PRODUCT 350 10 1 0.1 1 10 10 1 0.0001 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage DS30292 Rev. 3 - 2 100 3 of 3 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current .001 10 MMBT123S