ON MMBT2131T3 General purpose transistor Datasheet

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by MMBT2131T1/D
SEMICONDUCTOR TECHNICAL DATA
PNP Bipolar Junction Transistor
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
V
Collector–Base Voltage
VCBO
40
V
Emitter–Base Voltage
VEBO
5.0
V
IC
700
mA
Collector Current
Base Current
IB
350
mA
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
PD
PD
RqJA
342
178
366
mW
mW
°C/W
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
PD
PD
RqJA
665
346
188
mW
mW
°C/W
TJ, Tstg
– 55 to +150
°C
Operating and Storage Temperature Range
6
1
2
5
4
3
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
PNP
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
—
—
30
—
—
5.0
—
—
—
—
—
—
1.0
10
—
—
10
150
—
—
—
—
0.25
—
—
0.4
—
—
1.1
—
—
1.0
Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
V(BR)EBO
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
Vdc
Vdc
Vdc
Vdc
Vdc
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Motorola
Bipolar

Motorola, Inc.
1998 Power Transistor Device Data
3–1
VCE(sat), COLLECTOR–EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR–EMITTER VOLTAGE (V)
0.5
0.4
0.3
0.7 A
0.2
0.5 A
0.1 A
0.1
10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.001
0.01
0.2
0.5 A
0.15
0.1
0.1 A
10 mA
0.05
IC = 1.0 mA
0
0.1
0.000001 0.00001
0.0001
0.001
0.1
0.01
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
1.0
1000
VBE(sat)
VOLTAGE (V)
h FE , DC CURRENT GAIN
VCE = 3.0 V
150°C
25°C
0.1
–40°C
VCE(sat)
100
IC/IB = 10
0.01
0.01
1.0
0.1
0.01
0.001
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
1.0
1.0
0.16
T = 85°C
25°C
IC/IB = 10
VCE(sat) , VOLTAGE (V)
VOLTAGE (V)
VBE(sat)
0.1
VCE(sat)
0.12
0°C
0.08
0.04
IC/IB = 100
0
0.01
0.001
3–2
0.01
0.1
1.0
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
Figure 6. Collector–Emitter Saturation Voltage
Motorola Bipolar Power Transistor Device Data
1.0
0.6
1.0
T = 85°C
IC/IB = 100
–40°C
25°C
VBE(on) , VOLTAGE (V)
VCE(sat), VOLTAGE (V)
0.5
0°C
0.4
0.3
0.2
0.75
25°C
0.5
150°C
0.25
0.1
VCE = 1.0 V
0
0
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.1
1.0
0.0001
0.001
0.1
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Collector–Emitter Saturation Voltage
Figure 8. VBE(on) Voltage
1.0
1.0
0.5
0.2
0.1
0.1
P(pk)
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZθJA(t) = r(t) RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
t1
t2
0.02
DUTY CYCLE, D = t1/t2
0.01
0.01
0.0001
0.001
0.01
0.1
1.0
10
100
TIME (sec)
Figure 9. Thermal Response Curve
Motorola Bipolar Power Transistor Device Data
3–3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
5
4
2
3
B
S
1
D
G
M
J
C
0.05 (0.002)
K
H
CASE 318F–02
ISSUE C
DIM
A
B
C
D
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0098 0.0157
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
0_
10 _
0.0985 0.1181
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.25
0.40
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.65
0_
10 _
2.50
3.00
NO CONNECTION
COLLECTOR
EMITTER
NO CONNECTION
COLLECTOR
BASE
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3–4
◊
Motorola Bipolar Power Transistor Device
Data
MMBT2131T1/D
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