ON MMBV2105L Silicon tuning diode Datasheet

MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device
Silicon Tuning Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
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6.8−100 pF, 30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
Features
•
•
•
•
•
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance − 10%
Complete Typical Design Curves
Pb−Free Packages are Available
3
Cathode
SOT−23
2
Cathode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
@ TA = 25°C
MMBV21xx
Derate above 25°C
PD
@ TA = 25°C
Derate above 25°C
1
Anode
TO−92
MARKING
DIAGRAMS
3
1
MV21xx
LV2209
225
1.8
mW
mW/°C
280
2.8
mW
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
SOT−23 (TO−236)
CASE 318−08
STYLE 8
Characteristic
Symbol
V(BR)R
Typ
Max
Unit
Vdc
30
25
−
−
−
−
IR
−
−
0.1
mAdc
TCC
−
280
−
ppm/°C
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz)
Min
xxx M G
G
1
xxx = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Reverse Breakdown Voltage
(IR = 10 mAdc)
MMBV21xx, MV21xx
LV2209
1
Anode
1
2
TO−92 (TO−226AC)
CASE 182
STYLE 1
yy
yyyy
AYWW G
G
yyyyyy = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Marking
Package
Shipping †
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1
M4G
SOT−23
3,000 / Tape & Reel
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2101LT1G
M4G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2101L
M4G
SOT−23
Bulk (Note 1)
6.1
6.8
7.5
450
2.5
2.7
3.2
MV2101
MV2101
TO−92
1,000 per Box
6.1
6.8
7.5
450
2.5
2.7
3.2
MV2101G
MV2101
TO−92
(Pb−Free)
1,000 per Box
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
4H
SOT−23
3,000 / Tape & Reel
9.0
10
11
400
2.5
2.9
3.2
MMBV2105LT1
4U
SOT−23
3,000 / Tape & Reel
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2105LT1G
4U
SOT−23
(Pb−Free)
3,000 / Tape & Reel
13.5
15
16.5
400
2.5
2.9
3.2
Device
MMBV2105L
4U
SOT−23
Bulk (Note 1)
13.5
15
16.5
400
2.5
2.9
3.2
MV2105
MV2105
TO−92
1,000 per Box
13.5
15
16.5
400
2.5
2.9
3.2
MV2105G
MV2105
TO−92
(Pb−Free)
1,000 per Box
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
4W
SOT−23
3,000 / Tape & Reel
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2107LT1G
4W
SOT−23
(Pb−Free)
3,000 / Tape & Reel
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2107L
4W
SOT−23
Bulk (Note 1)
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1
4X
SOT−23
3,000 / Tape & Reel
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2108LT1G
4X
SOT−23
(Pb−Free)
3,000 / Tape & Reel
24.3
27
29.7
300
2.5
3.0
3.2
LV2209
TO−92
1,000 per Box
29.7
33
36.3
200
2.5
3.0
3.2
MMBV2109LT1
4J
SOT−23
3,000 / Tape & Reel
29.7
33
36.3
200
2.5
3.0
3.2
MMBV2109LT1G
4J
SOT−23
(Pb−Free)
3,000 / Tape & Reel
29.7
33
36.3
200
2.5
3.0
3.2
LV2209
MMBV2109L
4J
SOT−23
Bulk (Note 1)
29.7
33
36.3
200
2.5
3.0
3.2
MV2109
MV2109
TO−92
1,000 per Box
29.7
33
36.3
200
2.5
3.0
3.2
MV2109G
MV2109
TO−92
(Pb−Free)
1,000 per Box
29.7
33
36.3
200
2.5
3.0
3.2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16″.
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
2. TR, TUNING RATIO
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85°C in the following equation, which defines TCC:
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
TCC +
– CT(–65°C)
106
ŤCT() 85°C)
Ť
·
85 ) 65
C (25°C)
T
Accuracy limited by measurement of CT to ±0.1 pF.
Q + 2pfC
G
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2
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
TA = 25°C
f = 1.0 MHz
C T , DIODE CAPACITANCE (pF)
500
200
100
MMBV2109LT1/MV2109
50
MMBV2105LT1/MV2105
20
MMBV2101LT1/MV2101
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
5.0
3.0
20
10
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
100
50
VR = 2.0 Vdc
1.030
I R , REVERSE CURRENT (nA)
NORMALIZED DIODE CAPACITANCE
1.040
1.020
VR = 4.0 Vdc
1.010
1.000
VR = 30 Vdc
0.990
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
0.980
0.970
0.960
−75
−50
−25
0
+25
+50
+75
TJ, JUNCTION TEMPERATURE (°C)
TA = 125°C
20
10
5.0
2.0
1.0
0.50
TA = 75°C
0.20
0.10
TA = 25°C
0.05
+100
0.02
0.01
+125
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
MMBV2109LT1
500
300
200
100
50
30
20
10
1.0
10
3.0
5.0
7.0
VR, REVERSE VOLTAGE (VOLTS)
20
1000
30
300
200
100
10
10
30
MMBV2101LT1/MV2101
500
50
30
20
TA = 25°C
f = 50 MHz
2.0
25
5000
3000
2000
MMBV2101LT1/MV2101
1000
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
Q, FIGURE OF MERIT
Q, FIGURE OF MERIT
5000
3000
2000
5.0
0
Figure 4. Figure of Merit versus Reverse Voltage
TA = 25°C
VR = 4.0 Vdc
20
MMBV2109LT1/MV2109
30
50
70
100
f, FREQUENCY (MHz)
200
Figure 5. Figure of Merit versus Frequency
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3
250
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
ÉÉ
ÉÉ
D
L
P
J
K
SECTION X−X
X X
D
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.050
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
−−−
6.35
−−−
2.03
2.66
−−−
1.27
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MMBV2101LT1/D
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