MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • Low Drive Requirement • The SOT–223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. http://onsemi.com 250 mA 200 VOLTS RDS(on) = 14 N–Channel D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 200 Volts VGS ±20 Volts Drain Current ID 250 mAdc Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD 0.8 Watts 6.4 mW/°C Operating and Storage Temperature Range TJ, Tstg –65 to 150 °C Drain–to–Source Voltage Gate–to–Source Voltage – Non–Repetitive Maximum Temperature for Soldering Purposes Time in Solder Bath S MARKING DIAGRAM 4 1 THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Ambient G RθJA °C/W 156 TL °C Sec 260 10 2 TO–261AA CASE 318E STYLE 3 FT107 LWW 3 L WW 1. Device mounted on FR–4 glass epoxy printed circuit using minimum recommended footprint. = Location Code = Work Week PIN ASSIGNMENT 4 Drain 1 Gate 2 Drain 3 Source ORDERING INFORMATION Device Package Shipping MMFT107T1 SOT–223 1000 Tape & Reel MMFT107T3 SOT–223 4000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 4 1 Publication Order Number: MMFT107T1/D MMFT107T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 200 – – Vdc Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) IDSS – – 30 nAdc Gate–Body Leakage Current – Reverse (VGS = 15 Vdc, VDS = 0) IGSS – – 10 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 1.0 – 3.0 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 200 mA) RDS(on) – – 14 Ohms Drain–to–Source On–Voltage (VGS = 10 V, ID = 200 mA) VDS(on) – – 2.8 Vdc Forward Transconductance (VDS = 25 V, ID = 250 mA) gfs – 300 – mmhos Ciss – 60 – pF Coss – 30 – Crss – 6.0 – VF – 0.8 – V IS – – 250 mA ISM – – 500 Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 10 µA) ON CHARACTERISTICS (Note 2.) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 V V, VGS = 0, 0 f = 1.0 MHz) Transfer Capacitance SOURCE DRAIN DIODE CHARACTERISTICS Diode Forward Voltage Continuous Source Current, Body Diode Pulsed Source Current, Body Diode (VGS = 0, IS = 250 mA) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 500 2 1.5 VDS = 10 V VGS = 10 V I D, DRAIN CURRENT (mA) I D, DRAIN CURRENT (AMPS) TJ = 25°C 5V 6V 4V 1 3V 0.5 0 0 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 400 300 200 100 0 10 TJ = 125°C 25°C -55°C 0 Figure 1. On–Region Characteristics 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics http://onsemi.com 2 5 MMFT107T1 RDS(on) , DRAIN-SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 10 VGS = 10 V 8 TJ = 125°C 6 4 25°C 2 -55°C 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500 Figure 3. On–Resistance versus Drain Current ID = 1 A VGS = 10 V 1 0.1 -75 C, CAPACITANCE (pF) 0.1 TJ = 125°C 150 0 150 100 Ciss 50 25°C Coss Crss 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN DIODE FORWARD VOLTAGE (VOLTS) 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 30 Figure 6. Capacitance Variation 10 2 ID = 200 mA 9 gFS, TRANSCONDUCTANCE (mhos) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 125 VGS = 0 V f = 1 MHz TJ = 25°C Figure 5. Source–Drain Diode Forward Voltage 8 7 VDS = 100 V 6 5 4 160 V 3 2 1 0 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) 250 200 0.01 -50 Figure 4. On–Resistance Variation with Temperature 1 I D, DRAIN CURRENT (AMPS) 10 0 0.5 1 1.5 2 2.5 3 3.5 Qg, TOTAL GATE CHARGE (nC) 4 4.5 VDS = 10 V 1.5 1 0.5 0 5 TJ = -55°C 25°C 125°C 0 Figure 7. Gate Charge versus Gate–to–Source Voltage 100 200 300 ID, DRAIN CURRENT (AMPS) 400 Figure 8. Transconductance http://onsemi.com 3 500 MMFT107T1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm SOT-223 POWER DISSIPATION PD = 150°C – 25°C = 0.8 watts 156°C/W The power dissipation of the SOT-223 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows: PD = The 156°C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 0.8 watts. There are other alternatives to achieving higher power dissipation from the SOT-223 package. One is to increase the area of the collector pad. By increasing the area of the collector pad, the power dissipation can be increased. Although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RθJA versus collector pad area is shown in Figure 9. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 0.8 watts. http://onsemi.com 4 MMFT107T1 R JA , Thermal Resistance, Junction to Ambient (C/W) 160 Board Material = 0.0625″ G10/FR4, 2 oz Copper 140 TA = 25°C 0.8 Watts ° 120 1.5 Watts 1.25 Watts* 100 θ 80 0.0 *Mounted on the DPAK footprint 0.2 0.4 0.6 A, Area (square inches) 0.8 1.0 Figure 9. Thermal Resistance versus Collector Pad Area for the SOT-223 Package (Typical) Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDER STENCIL GUIDELINES or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the SOT-223 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 MMFT107T1 TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 10 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 4 HEATING ZONES 3 & 6 “SOAK” 160°C STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205° TO 219°C “SPIKE” PEAK AT 170°C SOLDER JOINT 150°C 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 5°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 10. Typical Solder Heating Profile http://onsemi.com 6 MMFT107T1 PACKAGE DIMENSIONS SOT–223 (TO–261) CASE 318E–04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K http://onsemi.com 7 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 MMFT107T1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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