Vishay MOC8111-X007 Optocoupler, phototransistor output, no base connection Datasheet

MOC8111/MOC8112
Vishay Semiconductors
Optocoupler, Phototransistor Output,
No Base Connection
FEATURES
A
1
6 B
• No base terminal connection for improved
common mode interface immunity
C
2
5 C
• Long term stability
NC
3
4 E
• Industry standard dual in line package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
i179009
DESCRIPTION
AGENCY APPROVALS
The MOC8111/ MOC8112 is an optocoupler consisting of a
gallium arsenide infrared emitting diode optically coupled to
a silicon planar phototransistor detector in a plastic plug-in
DIP 6 pin package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
In contrast to the IL1, the base terminal is not connected,
resulting in substantially improved common mode
interference immunity.
• UL1577, file no. E52744 system code H or J, double
protection
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• CSA 93751
ORDER INFORMATION
PART
REMARKS
MOC8111
CTR > 20 %, DIP-6
MOC8112
CTR > 50 %, DIP-6
MOC8111-X006
CTR > 20 %, DIP-6 400 mil (option 6)
MOC8111-X007
CTR > 20 %, SMD-6 (option 7)
MOC8112-X006
CTR > 50 %, DIP-6 400 mil (option 6)
MOC8112-X007
CTR > 50 %, SMD-6 (option 7)
MOC8112-X009
CTR > 50 %, SMD-6 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
DC forward current
IF
60
mA
Reverse voltage
VR
6.0
V
IFSM
2.5
A
Pdiss
100
mW
BVECO
30
V
IC
50
mA
IC
150
mA
Pdiss
150
mW
Surge forward current
t ≤ 10 µs
Total power dissipation
OUTPUT
Emitter collector breakdown voltage
Collector current
Total power dissipation
Document Number: 83661
Rev. 1.5, 11-Jan-08
t ≤ 10 µs
For technical questions, contact: [email protected]
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MOC8111/MOC8112
Vishay Semiconductors Optocoupler, Phototransistor Output,
No Base Connection
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VISO
5300
VRMS
COUPLER
Isolation test voltage between emitter
and detector refer to standard climate
23/50 DIN 50014
Creepage distance
≥7
mm
Clearance distance
≥7
mm
Isolation thickness between
emitter and detector
≥4
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
CTI
175
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Tstg
- 55 to + 150
°C
Tamb
- 55 to + 100
°C
Tsld
260
°C
Storage temperature range
Ambient temperature range
Soldering temperature
max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm
(2)
Ω
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 10 mA
Reverse leakage current
VR = 6.0 V
MIN.
TYP.
MAX.
UNIT
VF
1.15
1.5
V
IR
0.05
10
µA
V = 0 V, f = 1.0 MHz
Cj
25
Collector emitter breakdown voltage
IC = 1.0 µA
BVCEO
Collector emitter leakage current
VCE = 10 V
ICEO
INPUT
Junction capacitance
pF
OUTPUT
V
1.0
IE = 10 µA
BVECO
VCE = 0 V, f = 1.0 MHz
CCE
7.0
IC = 500 µA, IF = 10 mA
VCEsat
0.15
Emitter collector breakdown voltage
Collector emitter capacitance
30
50
7.0
nA
V
pF
COUPLER
Collector saturation voltage
0.4
V
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
IF = 10 mA, VCE = 10 V
PART
SYMBOL
MIN.
MOC8111
CTR
20
TYP.
MAX.
UNIT
%
MOC8112
CTR
50
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Turn-on time
VCC = 10 V, RL = 100 Ω
IC = 2.0 mA, see figure 1
Turn-off time
VCC = 10 V, RL = 100 Ω
IC = 2.0 mA, see figure 1
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2
MIN.
TYP.
MAX.
UNIT
ton
7.5
20
µs
toff
5.7
20
µs
For technical questions, contact: [email protected]
Document Number: 83661
Rev. 1.5, 11-Jan-08
MOC8111/MOC8112
Optocoupler, Phototransistor Output, Vishay Semiconductors
No Base Connection
VCC = 10 V
Input pulse
R L =100 Ω
IC
Vout
10 %
Input
Output pulse
90 %
tf
tr
Input current adjusted
to achieve I C = 2mA
toff
ton
Test Circuit
Waveforms
imoc8111_01
Fig. 1 - Switching Times
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
0.248 (6.30)
0.256 (6.50)
ISO method A
0.335 (8.50)
0.343 (8.70)
0.048
0.039
(1.00)
min.
0.300 (7.62)
(0.45)
typ.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18 °
4°
typ.
0.114 (2.90)
0.031 (0.80) min.
0.031 (0.80)
0.018 (0.45)
0.035 (0.90)
0.022 (0.55)
0.100 (2.54) typ.
0.130 (3.0)
3° to 9°
0.010 (0.25)
typ.
0.300 to 0.347
(7.62 to 8.81)
i178004
Option 6
Option 7
Option 9
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.300 (7.62)
typ.
0.375 (9.53)
0.395 (10.03 )
0.300 (7.62)
ref.
0.028 (0.7)
min.
0.315 (8.0)
min.
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
Document Number: 83661
Rev. 1.5, 11-Jan-08
0.331 (8.4)
min.
0.406 (10.3)
max.
0.180 (4.6)
0.160 (4.1) 0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30 ) typ.
0.020 (0.51 )
0.040 (1.02 )
15° max.
0.315 (8.00)
min.
For technical questions, contact: [email protected]
18450
www.vishay.com
3
MOC8111/MOC8112
Vishay Semiconductors Optocoupler, Phototransistor Output,
No Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 83661
Rev. 1.5, 11-Jan-08
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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