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by MRF18090B/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
• GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
1.90 – 1.99 GHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 465B–03, STYLE 1
(NI–880)
(MRF18090B)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF18090BS)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.7
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF18090B MRF18090BS
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
VGS(Q)
2.5
3.7
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.1
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.2
—
S
Crss
—
4.2
—
pF
12
13.5
—
40
45
—
—
—
–10
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
Gps
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1930 – 1990 MHz)
η
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 – 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
dB
%
IRL
Ψ
dB
No Degradation In Output Power
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
MRF18090B MRF18090BS
2
MOTOROLA RF DEVICE DATA
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1.0 nF Chip Capacitor (0805)
6.8 pF, 100B Chip Capacitors
220 F, 50 V Electrolytic Capacitor
12 pF, 100B Chip Capacitors
2.2 k Chip Resistor (0805)
1.0 k Chip Resistors (0805)
10 kΩ Chip Resistor (0805)
6.8 kΩ Chip Resistor (0805)
BC847 SOT–23
0.85″ x 0.09″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
PCB
Printed Inductance
Printed Inductance (Butterfly)
0.70″ x 0.09″ Microstrip
0.36″ x 0.09″ Microstrip
0.21″ x 1.25″ Microstrip
0.45″ x 1.18″ Microstrip
1.37″ x 0.05″ Microstrip
0.39″ x 0.09″ Microstrip
1.25″ x 0.09″ Microstrip
Teflon Glass
Figure 1. 1.93 – 1.99 MHz Test Fixture Schematic
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Figure 2. 1.93 – 1.99 GHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18090B MRF18090BS
3
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0.1 F Chip Capacitor (0805)
1 nF Chip Capacitor (0805)
220 F, 50 V Electrolytic Capacitor
8.2 pF, 100A Chip Capacitors
22 pF, 100A Chip Capacitors
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
2.2 kΩ Chip Resistor (0805)
R5
10 kΩ Chip Resistor (0603)
R6
5 kΩ, SMD Potentiometer
T1
LP2951 Micro–8 Voltage Regulator
T2
BC847 SOT–23 NPN Transistor
Z1
0.491″ x 0.110″ Microstrip
Z2
0.756″ x 1.260″ Microstrip
Z3
1.433″ x 1.260″ Microstrip
Z4
0.567″ x 0.110″ Microstrip
Substrate = 0.5 mm Teflon Glass
Figure 3. 1.93 – 1.99 GHz Demo Board Schematic
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MRF18090B MRF18090BS
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
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Figure 9. Wideband Gain and IRL
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MOTOROLA RF DEVICE DATA
MRF18090B MRF18090BS
5
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Zin
ZOL*
Ω
Zin
Ω
1805
1.10 + j5.85
1.15 + j2.16
1880
1.56 + j6.75
1.13 + j2.60
1930
2.05 + j8.00
1.30 + j2.23
1990
2.30 + j7.30
0.82 + j2.90
= Complex conjugate of the source impedance.
ZOL* = Complex conjugate of the optimum load at a
given voltage, P1dB, gain, efficiency, bias
current and frequency.
Note: ZOL* was chosen based on tradeoffs between gain,
output power, and drain efficiency.
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MRF18090B MRF18090BS
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
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MOTOROLA RF DEVICE DATA
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MRF18090B MRF18090BS
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF18090B MRF18090BS
8
◊
MRF18090B/D
MOTOROLA RF DEVICE
DATA