MOTOROLA MRF9011LT1 Npn silicon high-frequency transistor Datasheet

Order this document
by MMBR901LT1/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
!" Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
• High Current–Gain — Bandwidth Product
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
• Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)
• High Power Gain —
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
• Guaranteed RF Parameters (MRF9011LT1)
• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
15
Vdc
Collector–Base Voltage
VCBO
25
Vdc
Emitter–Base Voltage
VEBO
2.0
Vdc
IC
30
mAdc
PD(max)
0.300
Watt
4.00
mW/°C
Tstg
– 55 to +150
°C
TJ(max)
150
°C
Symbol
Max
Unit
Tstg
150
°C
Collector Current — Continuous
Power Dissipation @ TC = 75°C (1)
MMBR901LT1, T3;
MRF9011LT1
Derate above 25°C
Storage Temperature Range
All
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
RθJC
°C/W
200
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 1997
MMBR901LT1, T3 MRF9011LT1
2–1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
25
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
2.0
—
—
Vdc
ICBO
—
—
50
nAdc
hFE
50
30
—
80
200
200
—
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
MMBR901LT1, T3
MRF9011LT1
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
MRF9011LT1
fT
—
3.8
—
GHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MRF9011LT1
Ccb
—
0.55
1.0
pF
Power Gain at Minimum Noise Figure
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
GNFmin
—
13.5
—
dB
Minimum Noise Figure (Figure 3)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
NFmin
—
1.8
—
dB
Insertion Gain in 50 Ω System
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
S212
9.0
10.2
—
dB
—
1.9
—
Cobo
—
—
1.0
pF
Gpe
—
12
—
dB
FUNCTIONAL TESTS
Minimum Noise Figure (Figure 3)
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
NFmin
MMBR901LT1, T3
dB
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
Common–Emitter Amplifier Gain
(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
MMBR901LT1
MMBR901LT1, T3 MRF9011LT1
2–2
MOTOROLA RF DEVICE DATA
8
16
VCE = 10 Vdc
f = 1 GHz
1.6
12
1.2
f = 1 MHz
0.8
7
6
GNF
5
4
8
ΓS = ΓL = 0
Zo = 50 OHMS
NF
3
2
4
0.4
NF, NOISE FIGURE (dB)
2
G NF , GAIN (dB)
C cb, COLLECTOR-BASE CAPACITANCE (pF)
MRF9011LT1
CIRCUIT USED IS HP 11608A
1
0
0
2
4
6
8
10
12
14
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
16
0
0
Figure 1. Collector–Base Capacitance
versus Collector–Base Voltage
3
6
9
12 15
18
21
IC, COLLECTOR CURRENT (mA)
24
27
0
30
Figure 2. Gain and Noise Figure
versus Collector Current
VCE
VBE
RF OUTPUT
**SLUG TUNER
RF INPUT
*BIAS
TEE
**SLUG TUNER
D.U.T.
*BIAS
TEE
**MICROLAB/FXR
**SF–11N FOR f < 1 GHz
**SF–31N FOR f > 1 GHz
Figure 3. MRF9011LT1 Functional Circuit Schematic
MOTOROLA RF DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2–3
MRF9011LT1
40
24
3
GNF
16
2
NF
5
4
8
VCE = 10 Vdc
f = 1 GHz
NF
4
1
8
6
12
G NF , GAIN (dB)
CIRCUIT USED — SEE FIGURE 3
3
2
CIRCUIT USED — SEE FIGURE 3
0
0.1
0.2
0.5
1
f, FREQUENCY (GHz)
2
0
0
0
3
Figure 4. Gain and Noise Figure
versus Frequency
24
27
30
0
30
VCE = 10 Vdc
Zo = 50 OHMS
4
|S 21| 2, INSERTION GAIN (dB)
Fτ , GAIN-BANDWIDTH PRODUCT (GHz)
9
12 15
18 21
IC, COLLECTOR CURRENT (mA)
1
Figure 5. Gain and Noise Figure
versus Collector Current
5
3
2
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
24
18
12
6
1
0
6
NF, NOISE FIGURE (dB)
7
GNF
4
NF, NOISE FIGURE (dB)
G NF , GAIN (dB)
32
8
16
5
VCE = 10 Vdc
IC = 5 mA
0
6
12
18
24
IC, COLLECTOR CURRENT (mA)
30
0
0.1
G Umax , MAXIMUM UNILATERAL GAIN (dB)
Figure 6. Gain–Bandwidth Product versus
Collector Current
0.2 0.3
0.5
1
2
f, FREQUENCY (GHz)
3
Figure 7. Insertion Gain versus Frequency
50
GUmax =
40
|S21|2
(1 – |S11|2)(1 – |S22|2)
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
30
20
10
0
0.1
0.2 0.3
0.5
1
2
f, FREQUENCY (GHz)
3
Figure 8. Maximum Unilateral Gain
versus Frequency
MMBR901LT1, T3 MRF9011LT1
2–4
MOTOROLA RF DEVICE DATA
S11
S21
S12
S22
VCE
(Vdc)
IC
(mA)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
5.0
5.0
100
200
500
1000
2000
0.85
0.78
0.71
0.66
0.60
– 41
– 76
– 131
– 169
152
13.64
10.77
6.10
3.22
1.65
153
134
102
77
47
0.03
0.05
0.08
0.08
0.11
65
54
35
33
46
0.93
0.80
0.55
0.45
0.47
– 17
– 29
– 42
– 48
– 63
10
100
200
500
1000
2000
0.72
0.70
0.66
0.63
0.58
– 59
– 100
– 150
179
147
20.01
14.31
7.03
3.57
1.79
145
123
94
73
46
0.03
0.04
0.06
0.07
0.11
62
49
38
45
57
0.87
0.67
0.44
0.37
0.41
– 23
– 36
– 43
– 46
– 60
15
100
200
500
1000
2000
0.65
0.66
0.65
0.63
0.59
– 75
– 118
– 159
174
144
23.44
15.56
7.10
3.57
1.77
138
116
90
71
45
0.02
0.04
0.05
0.06
0.11
57
46
42
52
62
0.81
0.59
0.40
0.35
0.40
– 27
– 38
– 40
– 43
– 58
20
100
200
500
1000
2000
0.61
0.66
0.66
0.65
0.61
– 89
– 130
– 166
171
143
24.32
15.11
6.68
3.32
1.65
133
111
88
69
43
0.02
0.03
0.04
0.06
0.10
51
43
46
56
65
0.77
0.55
0.41
0.39
0.44
– 28
– 35
– 34
– 39
– 56
30
100
200
500
1000
2000
0.63
0.68
0.69
0.70
0.66
– 132
– 157
– 177
165
138
13.18
7.07
3.23
1.78
0.93
118
104
90
71
42
0.02
0.02
0.03
0.05
0.09
47
44
55
65
79
0.72
0.66
0.62
0.59
0.62
– 15
– 16
– 24
– 38
– 62
5.0
100
200
500
1000
2000
0.85
0.80
0.70
0.65
0.58
– 38
– 71
– 126
– 166
154
13.67
10.97
6.35
3.39
1.74
155
136
104
78
48
0.03
0.05
0.07
0.07
0.10
70
56
37
36
50
0.93
0.83
0.60
0.51
0.54
– 14
– 24
– 35
– 40
– 55
10
100
200
500
1000
2000
0.75
0.71
0.65
0.62
0.57
– 55
– 94
– 145
– 177
149
20.12
14.60
7.33
3.74
1.88
147
125
96
74
47
0.02
0.04
0.05
0.06
0.10
66
50
39
46
60
0.88
0.72
0.50
0.45
0.49
– 19
– 30
– 35
– 38
– 53
15
100
200
500
1000
2000
0.68
0.67
0.64
0.62
0.58
– 68
– 110
– 155
177
146
23.53
15.90
7.45
3.74
1.90
140
119
92
71
45
0.02
0.03
0.04
0.06
0.09
61
49
42
53
65
0.85
0.65
0.47
0.44
0.50
– 22
– 31
– 32
– 35
– 51
20
100
200
500
1000
2000
0.64
0.64
0.64
0.62
0.59
– 79
– 122
– 161
174
145
24.77
15.81
7.10
3.53
1.75
135
114
89
79
44
0.02
0.03
0.04
0.05
0.09
56
46
46
56
68
0.81
0.62
0.48
0.46
0.53
– 23
– 29
– 28
– 33
– 50
30
100
200
500
1000
2000
0.61
0.63
0.65
0.66
0.63
– 114
– 147
– 172
168
140
16.25
9.10
4.22
2.27
1.15
123
107
90
71
41
0.01
0.02
0.03
0.05
0.08
48
49
53
63
79
0.79
0.71
0.66
0.63
0.67
– 15
– 15
– 22
– 33
– 53
10
Table 1. MRF9011LT1 Common Emitter S–Parameters
MOTOROLA RF DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2–5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
G
C
H
D
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 318–08
ISSUE AF
MMBR901LT1, T3
NOTES:
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: MILLIMETER.
A
L
G
3
4
S
B
1
F
H
2
D
J
C
R
K
DIM
A
B
C
D
F
G
H
J
K
L
R
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.80
3.04
0.110
0.120
1.20
1.39
0.047
0.055
0.84
1.14
0.033
0.045
0.39
0.50
0.015
0.020
0.79
0.93
0.031
0.037
1.78
2.03
0.070
0.080
0.013
0.10 0.0005
0.004
0.08
0.15
0.003
0.006
0.46
0.60
0.018
0.024
0.445
0.60 0.0175
0.024
0.72
0.83
0.028
0.033
2.11
2.48
0.083
0.098
STYLE 1:
PIN 1.
2.
3.
4.
COLLECTOR
EMITTER
EMITTER
BASE
CASE 318A–05
ISSUE R
MRF9011LT1
MMBR901LT1, T3 MRF9011LT1
2–6
MOTOROLA RF DEVICE DATA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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MOTOROLA RF DEVICE DATA ◊
MMBR901LT1, T3MMBR901LT1/D
MRF9011LT1
2–7