^smi-Conductoi ZPioducti, Una. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.SA MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, High Frequency Transistor High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure: NF = 2.5 dB (typ) @ f = 500 MHz • High FT - 4.5 GHz (typ) @ 1C = 20 mAdc TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. ABSOLUTE MAXIMUM RATINGS ITcase = 25 C) Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 12 20 3.0 40 Vdc Vdc Vdc Total Device Dissipation @ TA = 25° C 200 mWatts Derate ahnve ?S°C 1R mW/ ° P. Parameter VCFH VCBO VEBo Ic mA Thermal Data PD ELECTRICAL SPECIFICATIONS (Tease- 25 Cl NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. M Semi-Conductors encourages customers to verify that datasheets are current before placing orders. MRF914 STATIC [Off] Test Conditions Symbol Collector-Emitter Breakdown Voltage BVCEO (1C = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage BVcso (IC= 0.1 mAdc, IE=0) Emitter-Base Breakdown Voltage BVEBO (IE = 0.1 mAdc, 1C = 0) Collector Cutoff Current ICBO (VCE = 15 Vdc, IE = 0 Vdc) Min. Value Typ. Max. 12 - - Vdc 20 - - Vdc 3.0 - - Vdc - - 50 nA 200 . Unit STATIC (on) HFE DC Current Gain (1C = 20 mAdc, VCE = 10 Vdc) 30 _ DYNAMIC Symbol Test Conditions Current-Gain - Bandwidth Product fr CCB (1C = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Min. Value Typ. Max. - 4.5 - GHz - 0.7 - PF Unit MRF914 FUNCTIONAL Test Conditions Symbol MAG c 2 0|21| NF Maximum Available Gain (1C = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Insertion Gain (1C = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Noise Figure (1C = 5.0 mAdc, VCE = 10 Vdc, f = 500 MHz) Maximum Available Power Gain GMAX (1C = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) Win. Value Typ. Max. - 12 - dB 10 11 - dB - 2.5 - dB - 15 - dB Unit Table 1. Common Emitter S-Parameters, @ VCE = 10 V, 1C = 20 mA f S21 S11 S12 S22 z$ (MHz) 100 |S11| Z$ .45 -36 |S21| 15.6 Z4> 115 |S12| .03 75 |S22| .67 -20 200 .32 -38 8.7 101 .05 78 .55 -19 300 .26 -36 6.3 91 .08 76 .54 -17 400 .24 -36 4.6 86 .1 74 .52 -22 500 .22 -39 3.8 84 .12 75 .48 -23 600 .21 -40 3.4 78 .15 71 .48 -26 700 .19 -44 3.0 72 .17 68 .47 -29 800 .18 -48 2.5 68 .19 65 .46 -35 900 .18 -58 2.4 69 .20 67 .44 -40 1000 .18 -65 2.4 62 .23 63 .45 -42 Z$