Freescale MRFE6S9045NR1 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9045N
Rev. 0, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRFE6S9045NR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large - signal, common - source amplifier applications
in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 46 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
Pout = 16 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, + 12
Vdc
Maximum Operation Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.0
1.1
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
0.05
0.23
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.02
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
81
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Gps
21
22.1
25
dB
Drain Efficiency
ηD
30.5
32
—
%
ACPR
—
- 46
- 44
dBc
IRL
—
- 19
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
(continued)
MRFE6S9045NR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 350 mA, Pout = 16 W Avg., f = 920 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA,
Pout = 45 W, f = 920 - 960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
68
—
%
IRL
—
- 12
—
dB
P1dB
—
52
—
W
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 48 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
10
—
Gain Flatness in 35 MHz Bandwidth @ Pout = 10 W Avg.
GF
—
0.72
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.011
—
dB/°C
ΔP1dB
—
0.006
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
3
B2
B1
R1
VBIAS
+
+
C16
C17
C18
R3
+
R2
C15
RF
INPUT
C10
L2
VSUPPLY
+
C7
L1
C8
Z10
Z11
Z12
Z13
Z14
Z15
C11
C12
C13
RF
Z16 OUTPUT
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C14
C9
C1
DUT
C3
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
0.057″
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
x 0.525″
C4
C6
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.095″ x 0.065″ Microstrip
0.800″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
0.325″ x 0.065″ Microstrip
Taconic RF - 35 0.030″, εr = 3.5
Figure 1. MRFE6S9045NR1 Test Circuit Schematic
Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair Rite
B2
Ferrite Bead
2743021447
Fair Rite
C1, C7, C10, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C4, C12
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
15 pF Chip Capacitor
ATC100B150JT500XT
ATC
C5, C6
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C8, C9
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C11
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
C13
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
Kemet
C18
220 μF, 50 V Electrolytic Capacitor
EMVY500ADA221MJA0G
Nippon Chemi - con
L1, L2
12.5 nH Inductors
A04T - 5
Coilcraft
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW120656001FKEA
Vishay
R3
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
MRFE6S9045NR1
4
RF Device Data
Freescale Semiconductor
C15
R2
C18
R3
R1
VGG
VDD
B1
C16 C17
B2
C7
C10
L2
C5
L1
C1
C4
C3
C6
CUT OUT AREA
C8
C2
C14
C9
C11
C13
C12
TO−270/272
Surface /
Bolt down
Figure 2. MRFE6S9045NR1 Test Circuit Component Layout
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
22
32
ηD
Gps
21
30
VDD = 28 Vdc
Pout = 10 W (Avg.) IDQ = 350 mA
N−CDMA IS−95 Pilot Sync, Paging
Traffic Codes 8 Through 13
20
19
IRL
−30
−40
18
−50
ACPR
17
−60
ALT1
16
−70
800
820
840
860
880
900
920
940
0
−5
−10
−15
−20
960
IRL, INPUT RETURN LOSS (dB)
34
ACPR (dBc), ALT1 (dBc)
23
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
22
40
Gps
Gps, POWER GAIN (dB)
21
30
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
20
19
−20
ACPR
−30
18
−40
17
−50
16
−60
ALT1
IRL
15
800
820
840
860
−70
880
900
920
940
0
−5
−10
−15
960
IRL, INPUT RETURN LOSS (dB)
50
ηD
ACPR (dBc), ALT1 (dBc)
23
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg.
24
−10
437.5 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 525 mA
Gps, POWER GAIN (dB)
23
350 mA
22
262.5 mA
21
175 mA
20
19
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
18
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
IDQ = 175 mA
−30
−40
262.5 mA
350 mA
−50
437.5 mA
525 mA
−60
17
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9045NR1
6
RF Device Data
Freescale Semiconductor
0
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz
f2 = 880.1 MHz, Two−Tone Measurements
−20
−30
−40
3rd Order
−50
−60
5th Order
−70
7th Order
−80
1
10
100
VDD = 28 Vdc, Pout = 48 W (PEP), IDQ = 350 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
IM3−L
IM3−U
−30
−40
IM5−L
−50
IM7−L IM7−U
IM5−U
−60
−70
200
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
Ideal
Pout, OUTPUT POWER (dBm)
55
P6dB = 49.21 dBm (83.36 W)
54
53
P3dB = 48.40 dBm (69.18 W)
52
51
P1dB = 47.38 dBm
50 (54.7 W)
49
Actual
48
VDD = 28 Vdc, IDQ = 350 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
47
46
24
25
26
27
28
29
30
31
32
33
34
Pin, INPUT POWER (dBm)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
ACPR
Gps
ηD
ALT1
1
10
−5
−10
−15
−20
25_C
−25
85_C
−30
−30_C
−35
25_C
−40
85_C
−30_C −45
−50
TC = −30_C
−55
−60
85_C
−65
25_C
−70
−75
100
−30_C
VDD = 28 Vdc, IDQ = 350 mA
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
25_C
85_C
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
22
25_C
25_C
85_C
Gps
21
60
20
50
19
40
18
30
20
VDD = 28 Vdc
IDQ = 350 mA
f = 880 MHz
ηD
16
22
21
20
19
28 V
10
VDD = 24 V
0
100
15
1
IDQ = 350 mA
f = 880 MHz
70
85_C
17
23
80
−30_C
Gps, POWER GAIN (dB)
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
23
10
32 V
18
0
Pout, OUTPUT POWER (WATTS) CW
20
40
60
80
Pout, OUTPUT POWER (WATTS) CW
100
Figure 12. Power Gain versus Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 32%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9045NR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
... .
...............
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
...........
......
..........
......
...
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
f = 910 MHz
f = 850 MHz
Zsource
Zload
f = 910 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.42 + j0.30
3.05 + j1.27
865
0.42 + j0.44
3.16 + j1.33
880
0.45 + j0.60
3.31 + j1.33
895
0.48 + j0.74
3.43 + j1.20
910
0.50 + j0.85
3.35 + j1.05
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9045NR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
11
MRFE6S9045NR1
12
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2007
Description
• Initial Release of Data Sheet
MRFE6S9045NR1
14
RF Device Data
Freescale Semiconductor
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directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007. All rights reserved.
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