2DB1386Q/R PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) • • • Case: SOT89 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.055 grams (approximate) COLLECTOR 2,4 SOT89 C 1 BASE 3 EMITTER Top View Device Schematic 4 3 E 2 C 1 B TOP VIEW Pin Out Configuration Ordering Information (Note 3) Part Number 2DB1386Q-13 2DB1386R-13 Notes: Case SOT89 SOT89 Packaging 2500/Tape & Reel 2500/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information YWW KP3x 2DB1386Q/R Document number: DS31147 Rev. 6 - 2 KP3x = Product Type Marking Code, where: KP3Q = 2DB1386Q KP3R = 2DB1386R YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53) 1 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1386Q/R Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value -30 -20 -6 -10 -5 Unit V V V A A Value 1 125 -55 to +150 Unit W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage 2DB1386Q 2DB1386R DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -30 -20 -6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.5 -0.5 V V V μA μA IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -20V, IE = 0 VEB = -5V, IC = 0 VCE(SAT) ⎯ 120 180 -0.25 ⎯ ⎯ -1.0 270 390 V IC = -4A, IB = -0.1A ⎯ IC = -0.5A, VCE = -2V Cobo ⎯ 55 ⎯ pF fT ⎯ 100 ⎯ MHz VCB = -20V, IE = 0, f = 1MHz VCE = -6V, IE = 50mA, f = 30MHz hFE Conditions 4. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. PD, POWER DISSIPATION (W) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) 2DB1386Q/R Document number: DS31147 Rev. 6 - 2 150 2 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1386Q/R VCE = -2V T A = 150°C IC/IB = 40 T A = 85°C T A = 25°C TA = 150°C TA = 85°C T A = -55°C T A = 25°C TA = -55°C 0.001 0.01 0.1 1 10 VCE = -2V T A = -55°C TA = -55°C TA = 25°C TA = 25°C TA = 85°C T A = 85°C T A = 150°C T A = 150°C IC /IB = 40 VCE = -6V f = 30MHz -IC, COLLECTOR CURRENT Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 2DB1386Q/R Document number: DS31147 Rev. 6 - 2 3 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1386Q/R Package Outline Dimensions R0 D1 .2 00 C E SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm H L B e B1 e1 8° (4 X ) A D Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) 2DB1386Q/R Document number: DS31147 Rev. 6 - 2 4 of 5 www.diodes.com November 2011 © Diodes Incorporated 2DB1386Q/R IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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