FEDD5116400F-01 1Semiconductor MSM5116400F This version: May 2001 Previous version : 4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5116400F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP. FEATURES ∙ 4,194,304-word × 4-bit configuration ∙ Single 5V power supply, ±10% tolerance ∙ Input : TTL compatible, low input capacitance ∙ Output : TTL compatible, 3-state ∙ Refresh : 4096 cycles/64ms ∙ Fast page mode, read modify write capability ∙ CAS before RAS refresh, hidden refresh, RAS-only refresh capability ∙ Packages 26/24-pin 300mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116400F-xxSJ) 26/24-pin 300mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5116400F-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Access Time (Max.) Family MSM5116400F tRAC tAA tCAC tOEA Cycle Time (Min.) 50ns 60ns 70ns 25ns 30ns 35ns 13ns 15ns 20ns 13ns 15ns 20ns 90ns 110ns 130ns Power Dissipation Operating (Max.) 413mW 385mW 358mW Standby (Max.) 5.5mW 1/15 FEDD5116400F-01 1Semiconductor MSM5116400F PIN CONFIGURATION (TOP VIEW) VCC DQ1 DQ2 WE RAS A11 1 2 3 4 5 6 26 25 24 23 22 21 VSS DQ4 DQ3 CAS OE A9 VCC DQ1 DQ2 WE RAS A11 1 2 3 4 5 6 26 25 24 23 22 21 VSS DQ4 DQ3 CAS OE A9 A10 A0 A1 A2 A3 VCC 8 9 10 11 12 13 19 18 17 16 15 14 A8 A7 A6 A5 A4 VSS A10 8 A0 9 A1 10 A2 11 A3 12 VCC 13 19 18 17 16 15 14 A8 A7 A6 A5 A4 VSS 26/24-Pin Plastic SOJ Pin Name 26/24-Pin Plastic TSOP (K Type) Function A0–A11 Address Input RAS Row Address Strobe CAS Column Address Strobe DQ1–DQ4 Data Input/Data Output OE Output Enable WE Write Enable VCC Power Supply (5V) VSS Ground (0V) NC No Connection Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 2/15 FEDD5116400F-01 1Semiconductor MSM5116400F BLOCK DIAGRAM Timing Generator RAS Timing Generator CAS 10 Column Address Buffers 10 Internal Address Counter A0 − A11 12 Row Address Buffers Refresh Control Clock 12 Row Decoders Word Drivers Column Decoders Sense Amplifiers WE Write Clock Generator 4 I/O Selector OE 4 Output Buffers 4 Input Buffers 4 4 4 DQ1 − DQ4 4 Memory Cells VCC On Chip VBB Generator VSS 3/15 FEDD5116400F-01 1Semiconductor MSM5116400F ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on Any Pin Relative to VSS VIN, VOUT –0.5 to VCC+0.5 V Voltage VCC Supply relative to VSS VCC –0.5 to 7.0 V Short Circuit Output Current IOS 50 mA Power Dissipation PD* 1 W Operating Temperature Topr 0 to 70 °C Storage Temperature Tstg –55 to 150 °C *: Ta = 25°C RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70°C) Parameter Power Supply Voltage Symbol Min. Typ. Max. Unit VCC 4.5 5.0 5.5 V VSS 0 0 0 Input High Voltage VIH 2.4 VCC + 0.5 Input Low Voltage VIL − 0.5*2 0.8 V *1 V V Notes: *1. The input voltage is VCC + 1.0V when the pulse width is less than 20ns (the pulse width is with respect to the point at which VCC is applied). *2. The input voltage is VSS − 1.0V when the pulse width is less than 20ns (the pulse width respect to the point at which VSS is applied). PIN CAPACITANCE (Vcc = 5V ± 10%, Ta = 25°C, f = 1 MHz) Parameter Symbol Min. Min. Unit CIN1 — 5 pF (RAS, CAS, WE, OE) CIN2 — 7 pF Output Capacitance (DQ1 – DQ4) CI/O — 7 pF Input Capacitance (A0 – A11) Input Capacitance 4/15 FEDD5116400F-01 1Semiconductor MSM5116400F DC CHARACTERISTICS (VCC = 5V ± 10%, Ta = 0 to 70°C) Parameter Symbol Condition Min. Max. Min. Max. 2.4 VCC 2.4 VCC 2.4 VCC V 0 0.4 0 0.4 0 0.4 V All other pins not under test = 0V − 10 10 − 10 10 − 10 10 µA DQ disable − 10 10 − 10 10 − 10 10 µA 75 70 65 mA 1,2 RAS, CAS = VIH 2 2 2 RAS, CAS ≥ VCC − 0.2V 1 1 mA 1 1 75 70 65 mA 1,2 5 5 5 mA 1 75 70 65 mA 1,2 70 65 60 mA 1,3 IOH = −5.0mA Output Low Voltage VOL IOL = 4.2mA 0V ≤ VI ≤ 6.5V; Input Leakage Current ILI Output Leakage Current ILO Average Power Supply Current ICC1 (Operating) ICC2 (Standby) ICC3 (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) RAS, CAS cycling, tRC = Min. CAS = VIH, tRC = Min. RAS = VIH, ICC5 (Standby) Average Power Supply Current 0V ≤ VO ≤ VCC RAS cycling, (RAS-only Refresh) Power Supply Current MSM5116400 F-70 Unit Note Max. VOH Average Power Supply Current MSM5116400 F-60 Min. Output High Voltage Power Supply Current MSM5116400 F-50 CAS = VIL, DQ = enable ICC6 RAS = cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC = Min. Notes: 1. ICC Max. is specified as ICC for output open condition. 2. The address can be changed once or less while RAS = VIL. 3. The address can be changed once or less while CAS = VIH. 5/15 FEDD5116400F-01 1Semiconductor MSM5116400F AC CHARACTERISTICS (1/2) (VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3,11,12 MSM5116400 F-50 MSM5116400 F-60 MSM5116400 F-70 Min. Max. Min. Max. Min. Max. tRC 90 110 130 ns tRWC 131 155 185 ns tPC 35 40 45 ns Fast Page Mode Read Modify Write tPRWC Cycle Time 76 85 100 ns Access Time from RAS tRAC 50 60 70 ns 4, 5, 6 Access Time from CAS tCAC 13 15 20 ns 4, 5 Access Time from Column Address tAA 25 30 35 ns 4, 6 Access Time from CAS Precharge tCPA 30 35 40 ns 4 Access Time from OE tOEA 13 15 20 ns 4 Output Low Impedance Time from CAS tCLZ 0 0 0 ns 4 CAS to Data Output Buffer Turnoff Delay Time tOFF 0 13 0 15 0 20 ns 7 OE to Data Output Buffer Turn-off Delay Time tOEZ 0 13 0 15 0 20 ns 7 Transition Time tT 3 50 3 50 3 50 ns 3 Refresh Period tREF 64 64 64 ms RAS Precharge Time tRP 30 40 50 ns RAS Pulse Width tRAS 50 10,000 60 10,000 70 10,000 ns RAS Pulse Width (Fast Page Mode) tRASP 50 100,000 60 100,000 70 100,000 ns RAS Hold Time tRSH 13 15 20 ns RAS Hold Time referenced to OE tROH 13 15 20 ns CAS Precharge Time (Fast Page Mode) tCP 7 10 10 ns CAS Pulse Width tCAS 13 10,000 15 10,000 20 10,000 ns CAS Hold Time tCSH 50 60 70 ns CAS to RAS Precharge Time tCRP 5 5 5 ns RAS Hold Time from CAS Precharge tRHCP 30 35 40 ns RAS to CAS Delay Time tRCD 17 37 20 45 20 50 ns 5 RAS to Column Address Delay Time tRAD 12 25 15 30 15 35 ns 6 Row Address Set-up Time tASR 0 0 0 ns Parameter Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Symbol Unit Note 6/15 FEDD5116400F-01 1Semiconductor MSM5116400F AC CHARACTERISTICS (2/2) (VCC = 5V ± 10%, Ta = 0 to 70°C) Note1,2,3,11,12 Parameter Symbol MSM5116400 F-50 MSM5116400 F-60 MSM5116400 F-70 Min. Max. Min. Max. Min. Max. Unit Note Row Address Hold Time tRAH 7 10 10 ns Column Address Set-up Time tASC 0 0 0 ns Column Address Hold Time tCAH 7 10 15 ns Column Address to RAS Lead Time tRAL 25 30 35 ns Read Command Set-up Time tRCS 0 0 0 ns Read Command Hold Time tRCH 0 0 0 ns 8 Read Command Hold Time referenced to RAS tRRH 0 0 0 ns 8 Write Command Set-up Time tWCS 0 0 0 ns 9 Write Command Hold Time tWCH 7 10 15 ns Write Command Pulse Width tWP 7 10 10 ns OE Command Hold Time tOEH 13 15 20 ns Write Command to RAS Lead Time tRWL 13 15 20 ns Write Command to CAS Lead Time tCWL 13 15 20 ns Data-in Set-up Time tDS 0 0 0 ns 10 Data-in Hold Time tDH 7 10 15 ns 10 OE to Data-in Delay Time tOED 13 15 20 ns CAS to WE Delay Time tCWD 36 40 50 ns 9 Column Address to WE Delay Time tAWD 48 55 65 ns 9 RAS to WE Delay Time tRWD 73 85 100 ns 9 tCPWD 53 60 70 ns 9 CAS Active Delay Time from RAS Precharge tRPC 5 5 5 ns RAS to CAS Set-up Time (CAS before RAS) tCSR 10 10 10 ns RAS to CAS Hold Time (CAS before RAS) tCHR 10 10 10 ns WE to RAS Precharge Time (CAS before RAS) tWRP 10 10 10 ns WE Hold Time from RAS (CAS before RAS) tWRH 10 10 10 ns RAS to WE Set-up Time (Test Mode) tWTS 10 10 10 ns RAS to WE Hold Time (Test Mode) 10 10 10 ns CAS Precharge WE Delay Time tWTH 7/15 FEDD5116400F-01 1Semiconductor MSM5116400F Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 5ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. -50 is measured with a load circuit equivalent to 2TTL load and 50pF, and -60/-70 is measured with a load circuit equivalent to 2TTL load and 100pF. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. 7. tOFF (Max.) and tOEZ (Max.) define the time at which the output achieved the open circuit condition and are not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle. 9. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.), tRWD ≥ tRWD(Min.), tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 10. These parameters are referenced to the CAS, leading edges in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. In a test CA8 and CA9 are not used and each DQ pin now access 4-bit locations. Since all 4 DQ pins are used, a total 16 data bits can be written in parallel into the memory array. In a read cycle, if 4 data bits are equal, the DQ pin will indicate a high level. If the 4 data bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle. 12. In a test mode read cycle, the value of access time parameter is delayed for 5ns for the specified value. These parameters should be specified in test mode cycle by adding the above value to the specified value in this data sheet. 8/15 FEDD5116400F-01 1Semiconductor MSM5116400F TIMING CHART Read Cycle RAS tRC tRAS VIH tRP VIL tCSH tCRP CAS tRAD VIL WE OE VIH VIL tCRP tRSH tCAS VIH tRAL tASR Address tRCD tRAH tASC Row tCAH Column tRRH tRCS VIH tAA VIL tOEA VIH VIL tCAC tRAC DQ tRCH tROH tOFF tOEZ tCLZ VOH Valid Data-out Open VOL “H” or “L” Write Cycle (Early Write) RAS tRC tRAS VIH tRP VIL tCSH tCRP CAS tRCD VIH tRAD VIL tRAL tASR Address WE OE DQ VIH VIL VIH tCRP tRSH tCAS tRAH tASC Row tCAH Column tCWL tWCS tWP tWCH VIL tRWL VIH VIL VIH VIL tDS tDH Valid Data-in Open “H” or “L” 9/15 FEDD5116400F-01 1Semiconductor MSM5116400F Read Modify Write Cycle tRWC RAS tRAS VIH tRP VIL tCSH tCRP CAS VIH VIH VIL tCRP tRSH tCAS tRAD VIL tASR Address tRCD tRAH Row tASC tCWL tRWL tCAH Colum tRCS tCWD tWP tRWD WE OE VIH VIL tAWD tAA tOEH tOEA VIH tOED VIL tCAC tRAC DQ VI/OH VI/OL tOEZ tCLZ Valid Data-out tDS tDH Valid Data-in “H” or “L” 10/15 FEDD5116400F-01 1Semiconductor MSM5116400F Fast Page Mode Read Cycle tRASP RAS VIH VIL tRCD tCRP CAS tCP VIH VIL tRAH tASC Row tASC tCAH Column tRCH VIL tASC tCAH Column tRCS tAA tRCH tRCS tAA tRCH tAA tOEA VIH VIL tRAC tCAC DQ tCRP VIH tOEA OE tRSH tCAS tRAL tCAH Column tRCS WE tCP tCAS tRAD tCSH VIL VIH tRHCP tCAS tASR Address tRP tPC tCLZ VOH tCPA tOFF tOEZ tCAC tCPA tOFF tOFF tCAC tOEZ tOEZ t CLZ tCLZ Valid Data-out Valid Data-out VOL tRRH tOEA Valid Data-out “H” or “L” Fast Page Mode Write Cycle (Early Write) tRP tRASP RAS CAS VIH VIL tCRP tCAS tRAH tASC Row tCSH tCAH tASC Column tCRP tASC tRAL tCAH Column tRWL tWCS VIH tWCH tWP tCWL tWCS tWCH tWP tCWL tWCS tWP tWCH VIL tDS DQ tCAH Column tCWL WE tRSH tCAS tRAD VIL VIL tCP tCAS tASR Address tCP tRCD VIH VIH tRHPC tPC VIH VIL tDH Valid * Data-in tDS tDH Valid * Data-in tDS tDH Valid * Data-in Note: OE = “H” or “L” “H” or “L” 11/15 FEDD5116400F-01 1Semiconductor MSM5116400F Fast Page Mode Read Modify Write Cycle tRASP RAS CAS tCSH VIH VIL tRCD VIL tCAH tCWL tASC Row tCAH tASC tRAL tCWL Column tRCS tRWD tCWD Column tRCS tCPWD tCWL tCPWD tCWD tCWD tAWD tAWD tRWL VIH tAWD VIL tWP tAA VIH tCAC tAA tCAC VI/OH Out tCLZ tDS tOED tOEZ tCAC tDS Out In tDH tOEA tOED tOEZ tOEZ VI/OL tCPA tOEA tOED VIL tROH tDH tAA tDS tWP tWP tCPA tDH tOEA DQ tCRP tCAS tASC Column tRAC OE tCP tCAS tCAH VIL VIH tRP tRSH tRAD tRCS WE tCP tCAS VIH tRAH tASR Address tPRWC In Out In tCLZ tCLZ Note: In = Valid Data-in, Out = Valid Data-out “H” or “L” RAS-only Refresh Cycle RAS tRC RAS tRAS VIH tRP VIL tCRP CAS Address DQ tRPC VIH VIL VIH VIL VOH VOL tASR tRAH Row tOFF Open Note: WE, OE = “H” or “L” “H” or “L” 12/15 FEDD5116400F-01 1Semiconductor MSM5116400F CAS before RAS Refresh Cycle tRP RAS CAS WE tRC tRAS VIH tRPC tCP VIL tRP tCSR tRPC tCHR VIH VIL tWRP tWRH tWRP VIH VIL tOFF DQ VOH Open VOL Note: OE, Address = “H” or “L” “H” or “L” Hidden Refresh Read Cycle tRC RAS CAS VIH VIL tCRP tRAS tRCD tRSH VIH VIH VIL tRAH tASC Row tCAH Column tCAC VIH VIL DQ tRAL VIL VOL tWRP tWRH tOFF tOEA VIH VOH tRRH tAA tROH OE tRP tRAD VIL tRCS WE tRP tCHR tASR Address tRC tRAS tRAC tOEZ tCLZ Open Valid Data-out “H” or “L” 13/15 FEDD5116400F-01 1Semiconductor MSM5116400F Hidden Refresh Write Cycle tRC RAS CAS VIH VIL tCRP WE tRAS tRCD tRSH VIH tRAD VIL VIH VIL tRAH tCAH tASC Row Column tRAL tRWL tWP VIH VIL tWCH tWCS OE DQ tRP tRP tCHR tASR Address tRC tRAS tWRP tWRH VIH VIL tDS VIH tDH Valid Data-in VIL “H” or “L” Test Mode-in Cycle tRC tRP RAS CAS tRAS VIH VIL tRPC tCP tCSR VIL tWTS WE DQ tCHR VIH VIH VIL VIH VIL tWTH tOFF Open Note: OE, Address = “H” or “L” “H” or “L” 14/15 FEDD5116400F-01 1Semiconductor MSM5116400F NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-to-date. 2. The outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. When planning to use the product, please ensure that the external conditions are reflected in the actual circuit, assembly, and program designs. 3. When designing your product, please use our product below the specified maximum ratings and within the specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating temperature. 4. Oki assumes no responsibility or liability whatsoever for any failure or unusual or unexpected operation resulting from misuse, neglect, improper installation, repair, alteration or accident, improper handling, or unusual physical or electrical stress including, but not limited to, exposure to parameters beyond the specified maximum ratings or operation outside the specified operating range. 5. Neither indemnity against nor license of a third party’s industrial and intellectual property right, etc. is granted by us in connection with the use of the product and/or the information and drawings contained herein. No responsibility is assumed by us for any infringement of a third party’s right which may result from the use thereof. 6. The products listed in this document are intended for use in general electronics equipment for commercial applications (e.g., office automation, communication equipment, measurement equipment, consumer electronics, etc.). These products are not authorized for use in any system or application that requires special or enhanced quality and reliability characteristics nor in any system or application where the failure of such system or application may result in the loss or damage of property, or death or injury to humans. Such applications include, but are not limited to, traffic and automotive equipment, safety devices, aerospace equipment, nuclear power control, medical equipment, and life-support systems. 7. Certain products in this document may need government approval before they can be exported to particular countries. The purchaser assumes the responsibility of determining the legality of export of these products and will take appropriate and necessary steps at their own expense for these. 8. No part of the contents contained herein may be reprinted or reproduced without our prior permission. Copyright 2001 Oki Electric Industry Co., Ltd. 15/15