Toshiba MT3S41T Uhf low noise amplifier application Datasheet

MT3S41T
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S41T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
•
Low Noise Figure :NF=1.2dB (@f=2GHz)
•
High Gain:|S21e|2=10dB (@f=2GHz)
Marking
3
Q7
1
2
TESM
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
8
V
Collector-Emitter voltage
VCEO
4.5
V
Emitter-Base voltage
VEBO
1.5
V
Collector-Current
IC
80
mA
Base-Current
IB
40
mA
Collector Power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature Range
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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MT3S41T
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
fT
Test Condition
Min
Typ.
Max
Unit
VCE=3V, IC=20mA, f=2GHz
11
15
-
GHz
2
VCE=3V, IC=20mA, f=1GHz
13.5
15.5
-
dB
2
|S21e| (2)
VCE=3V, IC=20mA, f=2GHz
8
10
-
dB
NF(1)
VCE=3V, IC=5mA, f=1GHz
-
0.8
-
dB
NF(2)
VCE=3V, IC=5mA, f=2GHz
-
1.2
1.8
dB
Min
Typ.
Max
Unit
|S21e| (1)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
-
1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
1
µA
DC Current Gain
hFE
VCE=3V, IC=20mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.9
1.4
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.55
0.9
pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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MT3S41T
|S21e| 2 -I C
1V
10
5
f=1GHz
Ta=25℃
10
5
1
100
REVERSE TRANSFER CAPACITANCE Cre(pF)
OUTPUT CAPACITANCE Cob(pF)
2V
10
1V
5
f=2GHz
Ta=25℃
1
10
COLLECTOR CURRENT I C (mA)
NF,Ga-I C
3.5
Ga
NF
2.5
10
2.0
8
1.5
6
1.0
4
f=2GHz
VCE=3V
Ta=25℃
0.5
0.0
1
IE=0
f=1MHz
Ta=25℃
1.0
0.8
Cob
0.6
0.4
Cre
0.2
0.0
2
0
10
100
COLLECTOR CURRENT I C (mA)
100
80
60
40
20
0
0
3
1
10
COLLECTOR-BASE VOLTAGE V CB (V)
P C -Ta
120
12
100
Cre,Cob-V CB
1.2
0.1
14
3.0
10
COLLECTOR CURRENT I C (mA)
100
COLLECTOR POWER DISSIPATION PC(mW)
0
f=2GHz
Ta=25℃
0
VCE=3V
15
2V
1V
fT-I C
20
TRANSITION FREQUENCY fT(GHz)
10
COLLECTOR CURRENT I C (mA)
VCE=3V
2
2V
15
1
NOISE FIGURE NF(dB)
INSERTION GAIN |S21e| (dB)
VCE=3V
0
|S21e| 2 -I C
15
ASSOCIATED GAIN Ga(dB)
2
INSERTION GAIN |S21e| (dB)
20
25
50
75 100 125 150
AMBIENT TEMPERATURE Ta(℃)
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2007-11-01
MT3S41T
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01
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