PRELIMINARY‡ 128Mb x16 SDRAM Addendum SYNCHRONOUS DRAM MT48LC8M16A2 – 2 MEG X 16 X 4 BANKS FEATURES ADDENDUM CHANGES • Supports PC100 and PC133 functionality • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes • Self Refresh Mode; standard and low power • LVTTL-compatible inputs and outputs • Single +3.3V ±0.3V power supply • 64ms, 4,096-cycle refresh The standard 128Mb SDRAM data sheets also pertain to the x16 device and should be referenced for a complete description of SDRAM functionality and operating modes. However, to meet the faster speed grades, some of the AC timing parameters are slightly different. This addendum data sheet will concentrate on the key differences required to support the enhanced speeds. The Micron 128Mb data sheet provides full specifications and functionality unless specified herein. OPTION For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds 8 MEG X 16 Configuration Refresh Count Row Addressing Bank Addressing Column Addressing MARKING • Configuration 8 Meg x 16 (2 Meg x 16 x 4 banks) WRITE Recovery (tWR) t WR = “2 CLK”1 • Package Plastic Package – OCPL2 54-pin TSOP II (400 mil) • Timing (Cycle Time) 6.0ns @ CL = 3 • Self Refresh Standard • Operating Temperature Range Commercial (0oC to +70oC) 8M16 A2 2 Meg x 16 x 4 banks 4K 4K (A0–A11) 4 (BA0, BA1) 512 (A0–A8) KEY TIMING PARAMETERS TG SPEED GRADE CLOCK FREQUENCY ACCESS TIME CL = 3* SETUP TIME HOLD TIME -6A -6A 167 MHz 5.4ns 1.5ns 0.8ns None None NOTE: 1. Refer to Micron Technical Note: TN-48-05. 2. Off-center parting line. Part Number: MT48LC8M16A2TG-6A x16 Addendum MT48lc8m16a2_addendum.fm - Rev. 7/02 ‡PRODUCTS 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology Inc. AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS. PRELIMINARY 128Mb x16 SDRAM Addendum IDD SPECIFICATIONS AND CONDITIONS Notes: 1, 5, 6, 11, 13; notes appear in the standard data sheet; VDD/VDDQ = +3.3V ±0.3V PARAMETER/CONDITION Operating Current: Active Mode; Burst = 2; READ or WRITE; tRC = tRC (MIN) Standby Current: Power-Down Mode; All banks idle; CKE = LOW Standby Current: Active Mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No accesses in progress Operating Current: Burst Mode; Continuous burst; READ or WRITE; All banks active Auto Refresh Current CKE = HIGH; CS# = HIGH Self Refresh Current: CKE ≤ 0.2V x16 Addendum MT48lc8m16a2_addendum.fm - Rev 7/02 SYMBOL -6A UNITS NOTES IDD1 170 mA 3, 18, 19, 32 IDD2 2 mA 32 IDD3 50 mA 3, 12, 19, 32 IDD4 165 mA t IDD5 330 mA t IDD6 3 mA Standard IDD7 2 mA 3, 18, 19, 32 3, 12, 18, 19, 32, 33 4 RFC = tRFC (MIN) RFC = 15.625µs 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology Inc. PRELIMINARY 128Mb x16 SDRAM Addendum ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Notes 5, 6, 8, 9,11; Notes appear on in the standard data sheet AC CHARACTERISTICS -6A PARAMETER SYMBOL CL = 3 Access time from CLK (pos. edge) MIN t AC(3) MAX UNITS NOTES 5.4 ns 27 Address hold time t AH 0.8 ns Address setup time t AS 1.5 ns CLK high-level width t CH 2.5 ns CLK low-level width t CL 2.5 ns CK(3) 6 ns CL = 3 Clock cycle time t CKE hold time t CKH 0.8 ns CKE setup time t CKS 1.5 ns CS#, RAS#, CAS#, WE#, DQM hold time t CMH 0.8 ns CS#, RAS#, CAS#, WE#, DQM setup time t CMS 1.5 ns Data-in hold time t DH 0.8 ns Data-in setup time t 1.5 ns DS CL = 3 Data-out high-impedance time 5.4 t HZ(3) ns Data-out low-impedance time t LZ 1 ns Data-out hold time (load) t OH 3 ns OHN 1.8 ns Data-out hold time (no load) t ACTIVE to PRECHARGE command t RAS 42 t RC 60 ns RCD 18 ns ACTIVE to ACTIVE command period ACTIVE to READ or WRITE delay t Refresh period (4,096 rows) t AUTO REFRESH period t ns t RP 18 ns RRD 12 ns T 0.3 tWR 1 CLK + 6ns 12 67 t Transition time WRITE recovery Exit SELF REFRESH to ACTIVE command t XSR 1.2 28 ms 60 t time1 64 REF 10 ns RFC PRECHARGE command period ACTIVE bank a to ACTIVE bank b command 120,000 23 7 ns ns ns ns 25 20 NOTE: 1. Auto precharge mode only. The precharge timing budget (tRP) begins 6ns for -6A after the first clock delay, after the last WRITE is executed. May not exceed limit set for precharge mode. x16 Addendum MT48lc8m16a2_addendum.fm - Rev 7/02 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology Inc. PRELIMINARY 128Mb x16 SDRAM Addendum AC FUNCTIONAL CHARACTERISTICS Notes appear in the standard data sheet. PARAMETER SYMBOL -6A SPEED UNITS NOTES CCD 1 t CKED 1 t 14 CKE to clock enable or power-down exit setup mode t PED 1 t 14 DQM to input data delay t DQD 0 t 17 DQM to data mask during WRITEs t DQM 0 t 17 DQM to data high-impedance during READs t DQZ 2 t 17 WRITE command to input data delay t DWD 0 t 17 Data-in to ACTIVE command t DAL 5 t Data-in to PRECHARGE command t DPL 2 t 15, 211 16, 21 Last data-in to burst STOP command t BDL 1 t 17 Last data-in to new READ/WRITE command t 1 t 17 Last data-in to PRECHARGE command t RDL 2 t 16, 21 LOAD MODE REGISTER command to ACTIVE or REFRESH command Data-out to high-impedance from PRECHARGE command (CL=3) t MRD 2 t 26 ROH(3) 3 t 17 READ/WRITE command to READ/WRITE command t t CKE to clock disable or power-down entry mode CDL t CK CK CK CK CK CK CK CK CK CK CK CK CK CK 17 NOTE: 1. The Note 21 in the standard data sheet does not apply for this speed grade and should read “Based on tCK = 6ns” DATA SHEET DESIGNATION Preliminary: This data sheet contains initial characterization limits that are subject to change upon full characterization of production devices. ® 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron and the M logo are registered trademarks and the Micron logo is a trademark of Micron Technology, Inc. x16 Addendum MT48lc8m16a2_addendum.fm - Rev 7/02 4 ©2002, Micron Technology Inc.