MCT9001 Dual Phototransistor Optocouplers Features Description ■ Two isolated channels per package The MCT9001 Optocoupler has two channels for density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. ■ Two packages fit into a 16 lead DIP socket ■ Underwriters Laboratory (U.L.) recognized File E90700 VDE approved for IEC60747-5-2 ■ Applications ■ AC line/digital logic – isolate high voltage transients ■ Digital logic/digital logic – eliminate spurious grounds ■ Digital logic/AC triac control – isolate high voltage ■ ■ ■ ■ ■ transients Twisted pair line receiver – eliminate ground loop feedthrough Telephone/telegraph line receiver – isolate high voltage transients High frequency power supply feedback control – maintain floating grounds and transients Relay contact monitor – isolate floating grounds and transients Power supply monitor – isolate transients Schematic Package Outlines ANODE 1 8 COLLECTOR 8 1 CATHODE 2 ANODE 3 7 EMITTER 6 COLLECTOR 8 CATHODE 4 5 EMITTER 8 1 1 Equivalent Circuit ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com MCT9001 — Dual Phototransistor Optocouplers February 2010 Symbol Rating Value Unit TOTAL DEVICE TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -55 to +100 °C TSOL Lead Solder Temperature (Refer to Reflow Temperature Profile) 260 for 10 sec °C 400 mW 4.83 mW/°C Forward Current – Continuous 60 mA Forward Current – Peak (PW = 1µs, 300pps) 3 A V PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER (Each channel) IF IF(pk) VR Reverse Voltage 5.0 PD LED Power Dissipation @ TA = 25°C 100 mW Derate above 25°C (Total Input) 1.1 mW/°C DETECTOR (Each channel) IC PD Collector Current – Continuous 30 mA Detector Power Dissipation @ TA = 25°C 150 mW 1.67 mW/°C Derate above 25°C ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com 2 MCT9001 — Dual Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ.* Max. Unit 1.0 1.3 V 10 µA EMITTER VF Input Forward Voltage IF = 10mA IR Reverse Current VR = 5V CJ Junction Capacitance VF = 0 V, f = 1MHz 50 pF DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 0.5mA, IF = 0 55 V BVECO Emitter-Collector Breakdown Voltage IE = 100µA, IF = 0 7 V Collector-Emitter Dark Current VCE = 24V, IF = 0 ICEO 5 VCE = 24V, TA = 85°C CCE Capacitance VCE = 0V, f = 1MHz 100 nA 50 µA 8 pF Transfer Characteristics Symbol Parameter Test Conditions Min. Typ.* Max. Units SWITCHING TIMES (AC) Non-Saturated ton Turn-on Time toff Turn-off Time RL = 100Ω, IC = 2mA, VCC = 10V 3 µs 3 µs tr Rise Time 2.4 µs tf Fall Time 2.4 µs 2.4 µs 25.0 µs Saturated ton Turn-on Time toff Turn-off Time IF = 16mA, RL = 1.9kΩ, VCE = 5V DC CHARACTERISTICS CTR CTR(sat) VCE(sat) Current Transfer Ratio, Collector-Emitter IF = 5mA, VCE = 5V 50 IF = 8mA, VCE = 0.4V 30 Saturation Voltage IF = 8mA, IC = 2.4mA 600 % % 0.40 V Isolation Characteristics Symbol VISO Characteristic Input-Output Isolation Voltage Test Conditions Min. II-O ≤ 10µA, t = 1min. 5000 1011 RISO Isolation Resistance VI-O = 500VDC CISO Isolation Capacitance f = 1MHz Typ.* Max. Units Vac(rms) Ω 0.5 pF *All typicals at TA = 25°C ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com 3 MCT9001 — Dual Phototransistor Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified) MCT9001 — Dual Phototransistor Optocouplers Typical Performance Curves Fig. 2 Normalized CTR vs. Ambient Temperature Fig. 1 Normalized CTR vs. Forward Current 1.6 1.4 VCE = 5.0V TA = 25°C 1.4 1.0 NORMALIZED CTR NORMALIZED CTR 1.2 Normalized to IF = 10mA 0.8 0.6 0.4 IF = 5mA 1.2 1.0 IF = 10mA 0.8 0.6 0.2 0.0 0 5 10 15 IF - FORWARD CURRENT (mA) Normalized to IF = 10mA TA = 25°C 0.4 -75 20 -50 -25 0 25 50 75 100 TA - AMBIENT TEMPERATURE (°C) 10 0 1000 IF = 10mA VCC = 10V TA = 25°C VCE = 10V SWITCHING SPEED (µs) ICEO - COLLECTOR-EMITTER DARK CURRENT (µA) 10 125 Fig. 4 Switching Speed vs. Load Resistor Fig. 3 Dark Current vs. Ambient Temperature 1 IF = 20mA 10 -1 10 -2 10 -3 10 -4 100 Toff Tf 10 Ton 1 Tr 10 -5 10 -6 0 25 50 75 100 0.1 125 0.1 1 10 R - LOAD RESISTOR (kΩ) TA - AMBIENT TEMPERATURE (°C) 100 Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 5 LED Forward Voltage vs. Forward Current 1.8 100 TA = 25°C VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) VF - FORWARD VOLTATGE (V) 1.7 1.6 1.5 1.4 TA = 55°C 1.3 TA = 25°C 1.2 10 1 IF = 2.5mA 0.1 IF = 20mA 0.01 IF = 10mA 1.1 IF = 5mA TA = 100°C 1.0 1 10 IF - LED FORWARD CURRENT (mA) ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 0.001 0.01 100 0.1 1 10 IC - COLLECTOR CURRENT (mA) www.fairchildsemi.com 4 Through Hole Surface Mount 9.18~10.18 (0.405) 9.18~10.18 (0.405) Pin 1 Pin 1 6.00~7.00 6.00~7.00 3.00~4.00 1.15~1.35 3.00~4.00 4.50 (Typ.) 1.15~1.35 0.35 Typ. 1.00 (Typ.) 2.30~3.30 3.85 Typ. 0.26 Typ. 2.29~2.79 0.40~0.60 7.62 (Typ.) 0.40~0.60 15° (Max.) 2.29~2.79 0.75~1.25 (Both sides 8.15 (Typ.) 9.86~10.46 0.26 (Typ.) 0.4" Lead Spacing Recommend Pad Layout for Surface Mount Leadform 9.18~10.18 (0.405) Pin 1 (1.50) (2.54) 6.00~7.00 (1.30) (10.50) (7.90) 3.00~4.00 1.15~1.35 4.60 (Typ.) (1.04) 15° (Max.) 1.10 (Typ.) 2.30~3.30 2.29~2.79 0.40~0.60 10.16 (Typ.) 0.26 (Typ.) Note: All dimensions are in millimeters. Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com 5 MCT9001 — Dual Phototransistor Optocouplers Package Dimensions Option Example Part Number No Option MTC9001 S MTC9001S Description Standard Through Hole Surface Mount Lead Bend SD MTC9001SD Surface Mount; Tape and Reel 300 MTC9001300 VDE Approved 3S MTC90013S Surface Mount Lead Bend; VDE Approved 3SD MTC90013SD 300W MTC9001300W Surface Mount; Tape and Reel; VDE Approved 0.4" Lead Spacing; VDE Approved Marking Information 1 V 3 MCT9001 2 XX YY T1 6 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com 6 MCT9001 — Dual Phototransistor Optocouplers Ordering Information 12.0 ± 0.1 4.90 ± 0.20 0.30 ± 0.05 4.0 ± 0.1 4.0 ± 0.1 Ø1.55 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 13.2 ± 0.2 10.30 ± 0.20 0.1 MAX 10.30 ± 0.20 16.0 ± 0.3 Ø1.6 ± 0.1 User Direction of Feed Note: All dimensions are in inches (millimeters) ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com 7 MCT9001 — Dual Phototransistor Optocouplers Carrier Tape Specifications MCT9001 — Dual Phototransistor Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 8 minutes max. www.fairchildsemi.com 8 AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax ® Fairchild® Fairchild Semiconductor® FACT Quiet Series FACT® ® FAST FastvCore FETBench FlashWriter®* FPS F-PFS ® FRFET SM Global Power Resource Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM PowerTrench® PowerXS™ Programmable Active Droop ® QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time™ SignalWise SmartMax SMART START SPM® STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock™ ® * The Power Franchise ® TinyBoost TinyBuck TinyCalc TinyLogic® TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * SerDes ® UHC Ultra FRFET UniFET VCX VisualMax XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 ©2003 Fairchild Semiconductor Corporation MCT9001 Rev. 1.0.7 www.fairchildsemi.com 9 MCT9001 — Dual Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.