Sirectifier MUR20120 Ultra fast recovery diode Datasheet

MUR20100, MUR20120
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MUR20100
MUR20120
VRSM
V
1000
1200
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Unit
TVJ=TVJM
TC=85oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
70
17
220
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
130
140
110
120
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
85
80
60
60
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
1000
1200
Dim.
o
C
78
W
0.4...0.6
Nm
2
g
MUR20100, MUR20120
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
750
250
7
uA
uA
mA
VF
IF=12A; TVJ=150oC
TVJ=25oC
1.87
2.15
V
VTO
For power-loss calculations only
1.65
V
TVJ=TVJM
18.2
m
1.6
60
K/W
60
ns
rT
RthJC
RthJA
trr
IRM
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
40
o
_
VR=540V; IF=20A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
7
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low losses at high
switching frequencies
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR20100, MUR20120
Ultra Fast Recovery Diodes
50
6
70
A
60
TVJ=100°C
VR= 540V
uC
5
TVJ= 25°C
TVJ=100°C
TVJ=150°C
30
Qr
3
max.
IF=30A
IF=60A
IF=30A
IF=15A
IRM
IF=30A
IF=60A
IF=30A
IF=15A
4
40
TVJ=100°C
VR= 540V
40
50
IF
A
30
20
2
20
typ.
max.
10
1
10
typ.
0
0
0
0
1
VF
2
3 V
1
4
10
100 A/us 1000
0
-diF/dt
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
1.0
s
0.9
1.4
1.2
IRM
Kf
TVJ=100°C
VR=540V
60
1200
V
50
1000
ns
VFR
trr 0.7
0.8
0.6
0.6
0.5
QR
max.
IF=30A
IF=60A
IF=30A
IF=15A
0.4
0.4
VFR
40
800
30
600
400
20
tfr
0.3
0.2
10
typ.
0.2
0.0
0.1
0
40
TVJ
80
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
400 A/us 600
Fig. 3 Peak reverse current versus
-diF/dt.
0.8
1.0
200
-diF/dt
0
200
-diF/dt
400 A/us 600
Fig. 5 Recovery time versus -diF/dt.
Fig. 7 Transient thermal impedance junction to case.
TVJ=125°C
IF=30A
0
0
400 A/us 600
200
-diF/dt
Fig. 6 Peak forward voltage
versus diF/dt.
200
0
tfr
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