PRELIMINARY
MX29LV017A
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte Programming (9us typical)
- Sector Erase (Sector structure 64K-Byte x32)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
•
•
•
•
•
•
•
•
- Data polling & Toggle bit for detection of program and
erase operation completion.
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Low VCC write inhibit is equal to or less than 1.4V
Package type:
- 40-pin TSOP
- 48-ball CSP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV017A is a 16-mega bit Flash memory organized as 2M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV017A is
packaged in 40-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in
standard EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maximum EPROM compatibility.
The standard MX29LV017A offers access time as fast
as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the MX29LV017A has separate chip enable (CE) and
output enable (OE) controls.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29LV017A uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV017A uses a command register to manage this
functionality. The command register allows for 100%
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
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REV. 1.0, NOV. 22, 2002
1
MX29LV017A
PIN CONFIGURATIONS
PIN DESCRIPTION
40 TSOP (Standard Type) (10mm x 20mm)
A16
A15
A14
A13
A12
A11
A9
A8
WE
RESET
NC
RY/BY
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
SYMBOL PIN NAME
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
MX29LV017A
A17
GND
A20
A19
A10
Q7
Q6
Q5
Q4
VCC
VCC
NC
Q3
Q2
Q1
Q0
OE
GND
CE
A0
A0~A20
Address Input
Q0~Q7
Data Input/Output
CE
Chip Enable Input
WE
Write Enable Input
RESET
Hardware Reset Pin/Sector Protect Unlock
OE
Output Enable Input
RY/BY
Ready/Busy Output
VCC
Power Supply Pin (2.7V~3.6V)
GND
Ground Pin
48-Ball CSP (Ball Pitch=0.8mm) Top View, Balls Facing Down
A
B
C
D
E
F
G
H
6
A14
A13
A15
A16
A17
NC
A20
GND
5
A9
A8
A11
A12
A19
A10
Q6
Q7
4
WE
RESET
NC
NC
Q5
NC
VCC
Q4
3
RY/BY
NC
NC
NC
Q2
Q3
VCC
NC
2
A7
A18
A6
A5
Q0
NC
NC
Q1
1
A3
A4
A2
A1
A0
CE
OE
GND
6.0 mm
8.0 mm
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2
MX29LV017A
BLOCK STRUCTURE
Table 1: MX29LV017A SECTOR ARCHITECTURE
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
A20
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A19
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
A18
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
A17
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
A16
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
P/N:PM0901
Address Range (in hexadecimal)
000000-00FFFF
010000-01FFFF
020000-02FFFF
030000-03FFFF
040000-04FFFF
050000-05FFFF
060000-06FFFF
070000-07FFFF
080000-08FFFF
090000-09FFFF
0A0000-0AFFFF
0B0000-0BFFFF
0C0000-0CFFFF
0D0000-0DFFFF
0E0000-0EFFFF
0F0000-0FFFFF
100000-10FFFF
110000-11FFFF
120000-12FFFF
130000-13FFFF
140000-14FFFF
150000-15FFFF
160000-16FFFF
170000-17FFFF
180000-18FFFF
190000-19FFFF
1A0000-1AFFFF
1B0000-1BFFFF
1C0000-1CFFFF
1D0000-1DFFFF
1E0000-1EFFFF
1F0000-1FFFFF
REV. 1.0, NOV. 22, 2002
3
MX29LV017A
BLOCK DIAGRAM
CE
OE
WE
RESET
CONTROL
INPUT
HIGH VOLTAGE
LOGIC
LATCH
BUFFER
Y-DECODER
AND
X-DECODER
ADDRESS
A0-A20
PROGRAM/ERASE
WRITE
STATE
MACHINE
(WSM)
STATE
REGISTER
FLASH
ARRAY
Y-PASS GATE
SENSE
AMPLIFIER
PGM
DATA
HV
ARRAY
SOURCE
HV
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q7
I/O BUFFER
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REV. 1.0, NOV. 22, 2002
4
MX29LV017A
dard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the
status of the erasing operation.
AUTOMATIC PROGRAMMING
The MX29LV017A is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV017A is less than 18 seconds.
Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whichever happens first.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program verification, and counts the number of sequences.
A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming
operation. Refer to write operation status, Table 7, for
more information on these status bits.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV017A electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SELECT
AUTOMATIC SECTOR ERASE
The automatic select mode provides manufacturer and
device identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the device to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9. Other address pin A6, A1 and A0 as referring to
Table 2. In addition, to access the automatic select codes
in-system, the host can issue the automatic select command through the command register without requiring
VID, as shown in Table 4.
The MX29LV017A is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
To verify whether or not sector being protected, the sector address must appear on the appropriate highest or-
P/N:PM0901
REV. 1.0, NOV. 22, 2002
5
MX29LV017A
der address bit (see Table 1). The rest of address bits,
as shown in Table 2, are don't care. Once all necessary
bits have been set as required, the programming equipment may read the corresponding identifier code on
Q7~Q0.
TABLE 2. MX29LV017A AUTOMATIC SELECT MODE BUS OPERATION (A9=VID)
A20
Description
Read Silicon ID
CE
OE
WE RESET
|
A15
A9
|
A16
A10
A8
A6
|
A5
A1
A0
|
A7
Q7~Q0
A2
L
L
H
H
X
X
VID
X
L
X
L
L
C2H
L
L
H
H
X
X
VID
X
L
X
L
H
C8H
Manufacturer Code
Read Silicon ID
(Device Code)
01H
Sector Protection
Verification
L
L
H
H
SA
X
VID
X
L
X
H
L
(protected)
00H
(unprotected)
NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High
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6
MX29LV017A
The single cycle Query command is valid only when the
device is in the Read mode, including Erase Suspend,
Standby mode, and Automatic Select mode; however, it
is ignored otherwise.
QUERY COMMAND AND COMMON FLASH
INTERFACE(CFI) MODE
MX29LV017A is capable of operating in the CFI mode.
This mode all the host system to determine the manufacturer of the device such as operating parameters and
configuration. Two commands are required in CFI mode.
Query command of CFI mode is placed first, then the
Reset command exits CFI mode. These are described
in Table 3.
The Reset command exits from the CFI mode to the
Read mode, or Erase Suspend mode, or Automatic Select mode. The command is valid only when the device
is in the CFI mode.
Table 3-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Description
Query-unique ASCII string "QRY"
Address
10
11
12
13
14
15
16
17
18
19
1A
Data
51
52
59
02
00
40
00
00
00
00
00
Address
Data
VCC supply, minimum (2.7V)
1B
27
VCC supply, maximum (3.6V)
1C
36
VPP supply, minimum (none)
1D
00
VPP supply, maximum (none)
1E
00
Typical timeout for single word/byte write (2N us)
1F
04
Typical timeout for Minimum size buffer write (2N us) (not supported)
20
00
21
0A
22
00
23
05
24
00
Maximum timeout for individual sector erase times (2 X Typ)
25
04
Maximum timeout for full chip erase times (not supported)
26
00
Primary vendor command set and control interface ID code
Address for primary algorithm extended query table
Alternate vendor command set and control interface ID code (none)
Address for secondary algorithm extended query table (none)
Table 3-2. CFI Mode: System Interface Data Values
(All values in these tables are in hexadecimal)
Description
N
Typical timeout for individual sector erase (2 ms)
N
Typical timeout for full chip erase (2 ms)
N
Maximum timeout for single word/byte write times (2 X Typ)
N
Maximum timeout for buffer write times (2 X Typ)
N
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7
MX29LV017A
Table 3-3. CFI Mode: Device Geometry Data Values
(All values in these tables are in hexadecimal)
Description
Device size (2N bytes)
Flash device interface code (asynchronous x 8)
Address
27
28
29
2A
2B
2C
2D
2E
2F
30
31
32
33
34
35
36
37
38
39
3A
3B
3C
Data
15
00
00
00
00
01
1F
00
00
01
00
00
00
00
00
00
00
00
00
00
00
00
Address
Data
40
50
41
52
42
49
Major version number, ASCII
43
31
Minor version number, ASCII
44
30
Maximum number of bytes in multi-byte write (not supported)
Number of erase sector regions
Erase sector region 1 information (refer to the CFI publication 100)
Erase sector region 2 information
Erase sector region 3 information
Erase sector region 4 information
Table 3-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
(All values in these tables are in hexadecimal)
Description
Query-unique ASCII string "PRI"
Address sensitive unlock (0=required, 1= not required)
45
01
Erase suspend (2= to read and write)
46
02
Sector protect (N= # of sectors/group)
47
01
Temporary sector unprotect (1=supported)
48
01
Sector protect/chip unprotect scheme
49
04
Simultaneous R/W operation (0=not supported)
4A
00
Burst mode type (0=not supported)
4B
00
Page mode type (0=not supported)
4C
00
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8
MX29LV017A
in the improper sequence will reset the device to the
read mode. Table 4 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
TABLE 4. MX29LV017A COMMAND DEFINITIONS
Command
Bus
First Bus
Second Bus
Third Bus
Fourth Bus
Fifth Bus
Sixth Bus
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Addr
Data Addr Data
Cycle Addr
Data Addr
Data Addr
Data Addr
Data
Reset
1
XXXH F0H
Read
1
RA
Read Silicon ID
4
XXXH AAH XXXH
55H
XXXH
90H ADI
DDI
Sector Protect
4
XXXH AAH XXXH
55H
XXXH
90H (SA)
00H
RD
Verify
x02H
01H
Byte Program
4
XXXH AAH XXXH
55H
XXXH
A0H PA
PD
Chip Erase
6
XXXH AAH XXXH
55H
XXXH
80H XXXH AAH
XXXH 55H
XXXH 10H
Sector Erase
6
XXXH AAH XXXH
55H
XXXH
80H XXXH AAH
XXXH 55H
SA
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
CFI Query
1
XXXH 98
30H
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A20=do
not care.
(Refer to table 2)
DDI = Data of Device identifier : C2H for manufacture code, C8H for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read. RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.
3. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data
is 00H, it means the sector is still not being protected.
4. Any number of CFI data read cycles are permitted.
5. The reset command is required to return to the read mode when the device is in the automatic select mode or if Q5
goes high.
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9
MX29LV017A
TABLE 5. MX29LV017A BUS OPERATION
DESCRIPTION
CE
OE
WE
RESET
A20 A15 A9
ADDRESS
A8 A6 A5
A16 A10
A7
A1
A0 Q0~Q7
A2
Read
L
L
H
H
AIN
Dout
Write
L
H
L
H
AIN
DIN(3)
Reset
X
X
X
L
X
High Z
Temporary sector unlock
X
X
X
VID
AIN
DIN
Output Disable
L
H
H
H
X
High Z
Vcc±0.3V X
X
Vcc±0.3V
X
High Z
Standby
Sector Protect
L
H
L
VID
SA
X
X
X
L
X
H
L
DIN
Chip Unprotect
L
H
L
VID
X
X
X
X
H
X
H
L
DIN
Sector Protection Verify
L
L
H
H
SA
X
VID
X
L
X
H
L CODE(5)
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. VID is the high voltage, 11.5V to 12.5V.
3. Refer to Table 4 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H means unprotected.
Code=01H means protected.
6. A20~A16=Sector address for sector protect.
7. The sector protect and chip unprotect functions may also be implemented via programming equipment.
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10
MX29LV017A
REQUIREMENTS FOR READING ARRAY
DATA
table and timing diagrams for write operations.
To read array data from the outputs, the system must
drive the CE and OE pins to VIL. CE is the power control
and selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH.
STANDBY MODE
When using both pins of CE and RESET, the device
enter CMOS Standby with both pins held at Vcc ± 0.3V.
IF CE and RESET are held at VIH, but not within the
range of VCC ± 0.3V, the device will still be in the standby
mode, but the standby current will be larger. During Auto
Algorithm operation, Vcc active current (ICC2) is required even CE = "H" until the operation is completed.
The device can be read with standard access time (tCE)
from either of these standby modes, before it is ready to
read data.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.
OUTPUT DISABLE
With the OE input at a logic high level (VIH), output from
the devices are disabled. This will cause the output pins
to be in a high impedance state.
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory
, the system must drive WE and CE to VIL, and OE to
VIH.
RESET OPERATION
An erase operation can erase one sector, multiple sectors
, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector.
The Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data. Section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
The RESET pin provides a hardware method of resetting
the device to reading array data. When the RESET pin is
driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET pulse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
re-initiated once the device is ready to accept another
command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET pulse.
When RESET is held at VSS±0.3V, the device draws
CMOS standby current (ICC4). If RESET is held at VIL
but not within VSS±0.3V, the standby current will be
greater.
After the system writes the "read silicon-ID" and "sector
protect verify" command sequence, the device enters
the "read silicon-ID" and "sector protect verify" mode.
The system can then read "read silicon-ID" and "sector
protect verify" codes from the internal register (which is
separate from the memory array) on Q7-Q0. Standard
read cycle timings apply in this mode. Refer to the "read
silicon-ID" and "sector protect verify" Mode and "read
silicon-ID" and "sector protect verify" Command
Sequence section for more information.
The RESET pin may be tied to system reset circuitry. A
system reset would that also reset the Flash memory,
enabling the system to read the boot-up firmware from
the Flash memory.
If RESET is asserted during a program or erase
operation, the RY/BY pin remains a "0" (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification
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11
MX29LV017A
system can thus monitor RY/BY to determine whether
the reset operation is complete. If RESET is asserted
when a program or erase operation is completed within a
time of tREADY (not during Embedded Algorithms). The
system can read data tRH after the RESET pin returns
to VIH.
AUTOMATIC CHIP ERASE COMMANDS
Refer to the AC Characteristics tables for RESET
parameters and to Figure 22 for the timing diagram.
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.
The device does not require the system to entirely preprogram prior to executing the Automatic Chip Erase.
Upon executing the Automatic Chip Erase, the device
will automatically program and verify the entire memory
for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a selftimed chip erase and verify begin. The erase and verify
operations are completed when the data on Q7 is "1" at
which time the device returns to the Read mode. The
system is not required to provide any control or timing
during these operations.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command must then be written to place the device in the
desired state.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required).
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H.
READ/RESET COMMAND
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage (VID). However, multiplexing high voltage onto address lines is not generally desired system
design practice.
The automatic erase begins on the rising edge of the
last WE or CE pulse, whichever happens first in the
command sequence and terminates when either the data
on Q7 is "1" at which time the device returns to the
Read mode or the data on Q6 stops toggling for two
consecutive read cycles at which time the device returns to the Read mode.
The MX29LV017A contains a Silicon-ID-Read operation
to supple traditional PROM programming methodology.
The operation is initiated by writing the read silicon ID
command sequence into the command register. Following the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H. A read
cycle with A1=VIL, A0=VIH returns the device code of
C8H for MX29LV017A.
The system must write the reset command to exit the
"Silicon-ID Read Command".
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MX29LV017A
TABLE 6. SILICON ID CODE
Pins
A0
A1
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Code(Hex)
Manufacturer code
VIL
VIL
1
1
0
0
0
0
1
0
C2H
Device code
VIH
VIL
1
1
0
0
1
0
0
0
C8H
Sector Protection
VIL
VIH
0
0
0
0
0
0
0
1
01H (Protected)
Verification
VIL
VIH
0
0
0
0
0
0
0
0
00H(Unprotected)
READING ARRAY DATA
RESET COMMAND
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See Erase Suspend/Erase
Resume Commands” for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the "read silicon-ID" and "sector protect verify"
mode. See the "Reset Command" section, next.
The reset command may be written between the sequence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an Automatic Select command
sequence. Once in the Automatic Select mode, the reset
command must be written to return to reading array data
(also applies to Automatic Select during Erase Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
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MX29LV017A
mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to respond to Erase Resume, program data to , or read data
from any sector not selected for erasure.
SECTOR ERASE COMMANDS
The device does not require the system to entirely preprogram prior to executing the Automatic Sector Erase
Set-up command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify
the sector(s) memory for an all-zero data pattern. The
system is not required to provide any control or timing
during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when either the data on Q7 is "1" at which time the device returns to the Read mode or the data on Q6 stops
toggling for two consecutive read cycles at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend program operation is complete, the system can once again
read array data within non-suspended sectors.
ERASE RESUME
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later, while the command
(data) is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are
loaded into internal register on the sixth falling edge of
WE or CE, whichever happens later. Each successive
sector load cycle started by the falling edge of WE or
CE, whichever happens later must begin within 50us
from the rising edge of the preceding WE or CE, whichever happens first. Otherwise, the loading period ends
and internal auto sector erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the device has resumed erasing.
BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 4 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.
ERASE SUSPEND
This command only has meaning while the state machine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend Com-
Any commands written to the device during the Em-
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MX29LV017A
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operation. The Byte Program command sequence should
be re-initiated once the device has reset to reading array
data, to ensure data integrity.
this, the device outputs the "complement,” or "0".” The
system must provide an address within any of the sectors selected for erasure to read valid status information
on Q7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchronously with Q0-Q6 while Output Enable (OE) is asserted low.
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY. Table 7 and the following subsections describe the
functions of these bits. Q7, RY/BY, and Q6 each offer a
method for determining whether a program or erase operation is complete or in progress. These three bits are
discussed first.
RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY status is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence. Since RY/BY
is an open-drain output, several RY/BY pins can be tied
together in parallel with a pull-up resistor to Vcc.
Q7: Data Polling
The Data Polling bit, Q7, indicates to the host system
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data
Polling is valid after the rising edge of the final WE pulse
in the program or erase command sequence.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the
Erase Suspend mode), or is in the standby mode.
During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming during Erase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program
address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data.
Table 7 shows the outputs for RY/BY during write operation.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence (prior to the
program or erase operation), and during the sector timeout.
During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to
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MX29LV017A
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6
stops toggling.
are required for sectors and mode information. Refer to
Table 7 to compare outputs for Q2 and Q6.
After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles for
approximately 100us and returns to reading array data.
If not all selected sectors are protected, the Automatic
Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.
Reading Toggle Bits Q6/ Q2
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. However, the system must also use Q2
to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfully completed the program or erase operation. If it is still toggling, the device did not complete
the operation successfully, and the system must write
the reset command to return to reading array data.
If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program command sequence is written, then returns to reading array
data.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm is complete.
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.
Table 7 shows the outputs for Toggle Bit I on Q6.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively erasing (that is,
the Automatic Erase algorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.
Q5
Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits
If this time-out condition occurs during sector erase op-
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MX29LV017A
eration, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector may not be reused, (other sectors are still functional and can be reused).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or combination of sectors are bad.
Table 7. WRITE OPERATION STATUS
Status
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Q7
(Note1)
Q6
Q5
Q3
(Note2)
Q2
RY/BY
Q7
Toggle
0
N/A
No
Toggle
0
0
Toggle
0
1
Toggle
0
1
No
Toggle
0
N/A Toggle
1
Data
Data
Q7
Toggle
0
N/A
N/A
0
Q7
Toggle
1
N/A
No
Toggle
0
0
Toggle
1
1
Toggle
0
Q7
Toggle
1
N/A
N/A
0
In Progress
Erase Suspended Mode
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
Byte Program in Auto Program Algorithm
Exceeded
Time Limits
Auto Erase Algorithm
Erase Suspend Program
Data Data Data
1
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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MX29LV017A
Q3
Sector Erase Timer
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling
and Toggle Bit are valid after the initial sector erase command sequence.
POWER-UP SEQUENCE
The MX29LV017A powers up in the Read only mode. In
addition, the memory contents may only be altered after
successful completion of the predefined command sequences.
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.
TEMPORARY SECTOR UNPROTECT
This feature allows temporary unprotection of previously
protected sector to change data in-system. The Temporary Sector Unprotect mode is activated by setting the
RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET pin, all the previously protected sectors are protected again.
DATA PROTECTION
SECTOR PROTECTION
The MX29LV017A is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transition. During power up the device automatically resets
the state machine in the Read mode. In addition, with
its control register architecture, alteration of the memory
contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles
resulting from VCC power-up and power-down transition
or system noise.
The MX29LV017A features hardware sector protection.
This feature will disable both program and erase operations for these sectors protected. To activate this mode,
the programming equipment must force VID on address
pin A9 and OE (suggest VID = 12V). Programming of
the protection circuitry begins on the falling edge of the
WE pulse and is terminated on the rising edge. Please
refer to sector protect algorithm and waveform.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=VIH,
A0=VIL, A6=VIL, it will produce a logical "1" code at
device output Q0 for a protected sector. Otherwise the
device will produce 00H for the unprotected sector. In
this mode, the addresses, except for A6, A1, A0, are
don't care. Address locations with A6=A1=VIL are reserved to read manufacturer and device codes.(Read
Silicon ID)
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE
= VIH or WE = VIH. To initiate a write cycle, CE and WE
must be a logical zero while OE is a logical one.
It is also possible to determine if the sector is protected
in the system by writing a Automatic Select command.
Performing a read operation with A1=VIH, it will produce
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MX29LV017A
a logical "1" at Q0 for the protected sector.
The system must write the reset command to exit the
Automatic Select mode.
CHIP UNPROTECT
The MX29LV017A also features the chip unprotect mode,
so that all sectors are unprotected after chip unprotect is
completed to incorporate any changes in the code. It is
recommended to protect all sectors before activating
chip unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.
Refer to chip unprotect algorithm and waveform for the
chip unprotect algorithm. The unprotection mechanism
begins on the falling edge of the WE pulse and is
terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Automatic Select command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
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MX29LV017A
ABSOLUTE MAXIMUM RATINGS
OPERATING RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . . . . -40°C to +85°C
VCC Supply Voltages
VCC for regulated voltage range . . . . . +3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on pins A9, OE, and
RESET is -0.5 V. During voltage transitions, A9, OE,
and RESET may overshoot VSS to -2.0 V for periods
of up to 20 ns. Maximum DC input voltage on pin A9
is +12.5 V which may overshoot to 14.0 V for periods
up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
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MX29LV017A
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL
CIN1
CIN2
COUT
PARAMETER
MIN.
Input Capacitance
Control Pin Capacitance
Output Capacitance
TYP
6
7.5
8.5
MAX.
7.5
9
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
READ OPERATION
Table 8. DC CHARACTERISTICS
Symbol
PARAMETER
ILI
TA = -40oC TO 85oC, VCC = 2.7V~3.6V
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Leakage Current
±1
uA
VIN = VSS to VCC, VCC= VCC max
ILIT
A9 Input Leakage Current
35
uA
VCC=VCC max; A9=12.5V
ILO
Output Leakage Current
±1
uA
VOUT = VSS to VCC, VCC=VCC max
ICC1
VCC Active Read Current
9
16
mA
CE=VIL, OE=VIH
2
4
mA
@5MHz
@1MHz
ICC2
VCC Active write Current
20
30
mA
CE=VIL, OE=VIH
ICC3
VCC Standby Current
0.2
15
uA
CE; RESET=VCC ± 0.3V
ICC4
VCC Standby Current
0.2
15
uA
RESET=VSS ± 0.3V
0.2
15
uA
VIH=VCC ± 0.3V;VIL=VSS ± 0.3V
-0.5
0.8
V
0.7xVCC
VCC+ 0.3
V
11.5
12.5
V
VCC=3.3V
0.45
V
IOL = 4.0mA, VCC= VCC min
During Reset (See Conditions)
ICC5
Automotive sleep mode
VIL
Input Low Voltage(Note 1)
VIH
Input High Voltage
VID
Voltage for Automotive
Select and Temporary
Sector Unprotect
VOL
Output Low Voltage
VOH1
Output High Voltage
0.85xVCC
VOH2
Output High Voltage
VCC-0.4
VLKO
Low VCC Lock-out Voltage
IOH = -2mA, VCC=VCC min
IOH = -100uA, VCC=VCC min
1.4
2.1
V
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
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REV. 1.0, NOV. 22, 2002
21
MX29LV017A
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 9. READ OPERATIONS
29LV017A-70
29LV017A-90
Symbol PARAMETER
MIN.
MIN.
tRC
Read Cycle Time (Note 1)
70
tACC
Address to Output Delay
70
90
ns
CE=OE=VIL
tCE
CE to Output Delay
70
90
ns
OE=VIL
tOE
OE to Output Delay
30
35
ns
CE=VIL
tDF
OE High to Output Float (Note2)
0
30
ns
CE=VIL
tOEH
Output Enable Read
0
0
ns
Hold Time
10
10
ns
0
0
ns
tOH
Toggle and Data Polling
Address to Output hold
MAX.
MAX.
90
25
TEST CONDITIONS:
0
UNIT
Conditions
ns
CE=OE=VIL
NOTE:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
• Input pulse levels: 0V/3.0V.
• Input rise and fall times is equal to or less than 5ns.
• Output load: 1 TTL gate + 100pF (Including scope and
jig), for 29LV017A-90. 1 TTL gate + 30pF (Including
scope and jig) for 29LV017A-70
• Reference levels for measuring timing: 1.5V.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
22
MX29LV017A
SWITCHING TEST CIRCUITS
DEVICE UNDER
2.7K ohm
+3.3V
TEST
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=100pF Including jig capacitance (MX29LV017-90)
CL=30pF Including jig capacitance (MX29LV017-70)
SWITCHING TEST WAVEFORMS
3.0V
TEST POINTS
0V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
23
MX29LV017A
Figure 1. READ TIMING WAVEFORMS
tRC
VIH
Addresses
ADD Valid
VIL
tACC
tCE
CE
VIH
VIL
WE
VIH
VIL
tOE
tOEH
tDF
VIH
OE
VIL
tACC
Outputs
VOH
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
VIH
RESET
VIL
P/N:PM0901
REV. 1.0, NOV. 22, 2002
24
MX29LV017A
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 10. Erase/Program Operations
29LV017A-70
29LV017A-90
MIN.
SYMBOL
PARAMETER
MIN.
MAX.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
70
90
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
45
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
ns
(OE High to WE Low)
tCS
CE Setup Time
0
0
ns
tCH
CE Hold Time
0
0
ns
tWP
Write Pulse Width
35
35
ns
tWPH
Write Pulse Width High
30
30
ns
tWHWH1
Programming Operation (Note 2)
9(typ.)
9(typ.)
us
(Byte program time)
tWHWH2
Sector Erase Operation (Note 2)
0.7(typ.)
0.7(typ.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
us
tRB
Recovery Time from RY/BY
0
0
ns
tBUSY
Sector Erase Valid to RY/BY Delay
90
90
ns
Chip Erase Valid to RY/BY Delay
90
90
ns
Program Valid to RY/BY Delay
90
90
ns
100ns
10us(typ.) 100ns
10us(typ.)
100ns
12ms(typ.) 100ns
12ms(typ.)
tWPP1
Write pulse width for sector
protect (A9, OE Control)
tWPP2
Write pulse width for sector
unprotect (A9, OE Control)
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
25
MX29LV017A
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 11. Alternate CE Controlled Erase/Program Operations
29LV017A-70
29LV017A-90
MIN.
SYMBOL
PARAMETER
MIN.
MAX.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
70
90
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
45
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHEL
Read Recovery Time Before Write
0
0
ns
tWS
WE Setup Time
0
0
ns
tWH
WE Hold Time
0
0
ns
tCP
CE Pulse Width
35
35
ns
tCPH
CE Pulse Width High
30
30
ns
tWHWH1
Programming Operation(note2)
9(Typ.)
9(Typ.)
us
tWHWH2
Sector Erase Operation (note2)
0.7(Typ.)
0.7(Typ.)
sec
NOTE:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
26
MX29LV017A
Figure 2. COMMAND WRITE TIMING WAVEFORM
VCC
Addresses
3V
VIH
ADD Valid
VIL
tAH
tAS
WE
VIH
VIL
tOES
tWPH
tWP
tCWC
CE
VIH
VIL
tCS
OE
tCH
VIH
VIL
tDS
tDH
VIH
Data
DIN
VIL
P/N:PM0901
REV. 1.0, NOV. 22, 2002
27
MX29LV017A
AUTOMATIC PROGRAMMING TIMING WAVEFORM
ing after automatic programming starts. Device outputs
DATA during programming and DATA after programming
on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling,
timing waveform)
One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling or toggle bit check-
Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM
Program Command Sequence(last two cycle)
tWC
XXXh
Address
Read Status Data (last two cycle)
tAS
PA
PA
PA
tAH
CE
tCH
tGHWL
OE
tWHWH1
tWP
WE
tCS
tWPH
tDS
tDH
A0h
Status
PD
DOUT
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
P/N:PM0901
REV. 1.0, NOV. 22, 2002
28
MX29LV017A
Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH
Write Data 55H
Write Data A0H
Write Program Data/Address
Data Poll
from system
Increment
Address
No
Verify Data OK ?
YES
No
Last Address ?
YES
Auto Program Completed
P/N:PM0901
REV. 1.0, NOV. 22, 2002
29
MX29LV017A
Figure 5. CE CONTROLLED WRITE TIMING WAVEFORM
XXX for program
XXX for erase
PA for program
SA for sector erase
XXX for chip erase
Data Polling
Address
PA
tWC
tAS
tAH
tWH
WE
tGHEL
OE
tCP
tWHWH1 or 2
CE
tWS
tCPH
tDS
tBUSY
tDH
Q7
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET
RY/BY
NOTES:
1. PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device.
2. Figure indicates the last two bus cycles of the command sequence.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
30
MX29LV017A
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be verified by DATA polling or toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
XXXh
Address
Read Status Data
tAS
VA
XXXh
VA
tAH
CE
tCH
tGHWL
OE
tWHWH2
tWP
WE
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
10h
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
VA=Valid Address for reading status data(see "Write Operation Status").
P/N:PM0901
REV. 1.0, NOV. 22, 2002
31
MX29LV017A
Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address XXXH
Write Data 55H Address XXXH
Write Data 80H Address XXXH
Write Data AAH Address XXXH
Write Data 55H Address XXXH
Write Data 10H Address XXXH
Data Poll from System
NO
Data=FFh ?
YES
Auto Chip Erase Completed
P/N:PM0901
REV. 1.0, NOV. 22, 2002
32
MX29LV017A
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A16 to A20 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure completion can be verified by DATA polling or toggle bit check-
ing after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
XXXh
Address
Read Status Data
tAS
VA
SA
VA
tAH
CE
tCH
tGHWL
OE
tWHWH2
tWP
WE
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
30h
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
P/N:PM0901
REV. 1.0, NOV. 22, 2002
33
MX29LV017A
Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address XXXH
Write Data 55H Address XXXH
Write Data 80H Address XXXH
Write Data AAH Address XXXH
Write Data 55H Address XXXH
Write Data 30H Sector Address
Last Sector
to Erase
NO
YES
Data Poll from System
NO
Data=FFh
YES
Auto Sector Erase Completed
P/N:PM0901
REV. 1.0, NOV. 22, 2002
34
MX29LV017A
Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
NO
ERASE SUSPEND
Toggle Bit checking Q6
not toggled
YES
Read Array or
Program
Reading or
Programming End
NO
YES
Write Data 30H
ERASE RESUME
Continue Erase
Another
Erase Suspend ?
NO
YES
P/N:PM0901
REV. 1.0, NOV. 22, 2002
35
MX29LV017A
Figure 11. IN-SYSTEM SECTOR PROTECT/CHIP UNPROTECT TIMING WAVEFORM (RESET Control)
VID
VIH
RESET
SA, A6
A1, A0
Data
Valid*
Valid*
Sector Protect or Chip Unprotect
Verify
60h
1us
60h
40h
Valid*
Status
Sector Protect =150us
Chip Unprotect =15ms
CE
WE
OE
Note: When sector protect, A6=0, A1=1, A0=0. When chip unprotect, A6=1, A1=1, A0=0.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
36
MX29LV017A
Figure 12. SECTOR PROTECT TIMING WAVEFORM (A9, OE Control)
A1
A6
12V
3V
A9
tVLHT
Verify
12V
3V
OE
tVLHT
tVLHT
tWPP 1
WE
tOESP
CE
Data
01H
F0H
tOE
A20-A16
Sector Address
Notes: tVLHT (Voltage transition time)=4us min.
tWPP1 (Write pulse width for sector protect)=100ns min.
tOESP (OE setup time to WE active)=4us min.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
37
MX29LV017A
Figure 13. SECTOR PROTECTION ALGORITHM (A9, OE Control)
START
Set Up Sector Addr
PLSCNT=1
OE=VID,A9=VID,CE=VIL
A6=VIL
Activate WE Pulse
Time Out 150us
Set WE=VIH, CE=OE=VIL
A9 should remain VID
Read from Sector
Addr=SA, A6=VIL, A1=VIH, A0=VIL
No
PLSCNT=32?
.
No
Data=01H?
Yes
Device Failed
Protect Another
Sector?
Yes
Remove VID from A9
Write Reset Command
Sector Protection
Complete
P/N:PM0901
REV. 1.0, NOV. 22, 2002
38
MX29LV017A
Figure 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
RESET=VID
Wait 1us
First Write
Cycle=60H
No
Temporary Sector
Unprotect Mode
Yes
Set up sector address
Write 60H to sector address
with A6=0, A1=1, A0=0
Wait 150us
Verify sector protect :
write 40H to sector address
with A6=0, A1=1, A0=0
Increment PLSCNT
Reset PLSCNT=1
Read from sector address
with A6=0, A1=1, A0=0
No
PLSCNT=25?
No
Data=01H ?
Yes
Device failed
Yes
Protect another
Yes
sector?
No
Remove VID from RESET
Write reset command
Sector protect complete
P/N:PM0901
REV. 1.0, NOV. 22, 2002
39
MX29LV017A
Figure 15. IN-SYSTEM CHIP UNPROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
RESET=VID
Wait 1us
First Write
Cycle=60H ?
No
Temporary Sector
Unprotect Mode
Yes
All sector
protected?
No
Protect all sectors
Yes
Set up first sector address
Chip unprotect :
write 60H with
A6=1, A1=1, A0=0
Wait 15ms
Verify sector unprotect
write 40H to sector address
with A6=1, A1=1, A0=0
Increment PLSCNT
Read from sector address
with A6=1, A1=1, A0=0
No
PLSCNT=1000?
No
Yes
Device failed
Set up next sector address
Data=00H ?
Yes
Last sector
verified?
Yes
No
Remove VID from RESET
Write reset command
Chip unprotect complete
P/N:PM0901
REV. 1.0, NOV. 22, 2002
40
MX29LV017A
Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control)
A1
12V
Vcc 3V
A9
tVLHT
A6
Verify
12V
Vcc 3V
OE
tVLHT
tVLHT
tWPP 2
WE
tOESP
CE
Data
00H
F0H
tOE
A20-A16
Sector Address
Notes: tVLHT (Voltage transition time)=4us min.
tWPP2 (Write pulse width for chip unprotect)=100ns min.
tOESP (OE setup time to WE active)=4us min.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
41
MX29LV017A
Figure 17. CHIP UNPROTECTION ALGORITHM (A9, OE Control)
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID
CE=VIL,A6=1
Activate WE Pulse
Time Out 15ms
Increment
PLSCNT
Set OE=CE=VIL
A9=VID,A1=1,A6=A0=0
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
No
PLSCNT=1000?
Yes
Yes
No
All sectors have
Device Failed
been verified?
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
42
MX29LV017A
WRITE OPERATION STATUS
Figure 18. DATA POLLING ALGORITHM
Start
Read Q7~Q0
Add.=VA(1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add.=VA
Yes
Q7 = Data ?
(2)
No
FAIL
Pass
NOTE : 1.VA=Valid address for programming or erasure.
2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
43
MX29LV017A
Figure 19. TOGGLE BIT ALGORITHM
Start
Read Q7-Q0
Read Q7-Q0
Toggle Bit Q6 =
Toggle ?
(Note 1)
NO
YES
NO
Q5= 1?
YES
Read Q7~Q0 Twice
Toggle bit Q6=
Toggle?
(Note 1,2)
NO
YES
Program/Erase Operation
Not Complete,Write
Reset Command
Program/Erase
operation Complete
Note:1.Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
P/N:PM0901
REV. 1.0, NOV. 22, 2002
44
MX29LV017A
Figure 20. Data Polling Timings (During Automatic Algorithms)
tRC
Address
VA
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tOEH
tDF
WE
tOH
DQ7
Complement
Complement
True
Valid Data
Q0-Q6
Status Data
Status Data
True
Valid Data
High Z
High Z
tBUSY
RY/BY
NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
45
MX29LV017A
Figure 21. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)
tRC
VA
VA
Address
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tDF
tOEH
WE
tOH
High Z
Q6/Q2
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Status
(first read)
Valid Data
tBUSY
RY/BY
NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
46
MX29LV017A
Table 12. AC CHARACTERISTICS
Parameter Std
Description
Test Setup All Speed Options Unit
tREADY1
RESET PIN Low (During Automatic Algorithms)
MAX
20
us
MAX
500
ns
to Read or Write (See Note)
tREADY2
RESET PIN Low (NOT During Automatic
Algorithms) to Read or Write (See Note)
tRP
RESET Pulse Width (During Automatic Algorithms)
MIN
500
ns
tRH
RESET High Time Before Read(See Note)
MIN
50
ns
tRB
RY/BY Recovery Time(to CE, OE go low)
MIN
0
ns
Note:Not 100% tested
Figure 22. RESET TIMING WAVEFORM
RY/BY
CE, OE
tRH
RESET
tRP
tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
tRB
CE, OE
RESET
tRP
Reset Timing during Automatic Algorithms
P/N:PM0901
REV. 1.0, NOV. 22, 2002
47
MX29LV017A
Table 13. TEMPORARY SECTOR UNPROTECT
Parameter Std.
Description
Test Setup
All Speed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET Setup Time for Temporary Sector Unprotect
Min
4
us
Note:
Not 100% tested
Figure 23. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
12V
RESET
0 or Vcc
0 or Vcc
Program or Erase Command Sequence
tVIDR
tVIDR
CE
WE
tRSP
RY/BY
Figure 24. Q6 vs Q2 for Erase and Erase Suspend Operations
Enter Embedded
Erasing
Erase
Suspend
Erase
WE
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Complete
Q6
Q2
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
P/N:PM0901
REV. 1.0, NOV. 22, 2002
48
MX29LV017A
Figure 25. TEMPORARY SECTOR UNPROTECT ALGORITHM
Start
RESET = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
P/N:PM0901
REV. 1.0, NOV. 22, 2002
49
MX29LV017A
Figure 26. ID CODE READ TIMING WAVEFORM
VCC
3V
VID
ADD
VIH
VIL
A9
ADD
A0
VIH
VIL
tACC
tACC
VIH
A1
VIL
ADD
A2-A8
A10-A20
CE
VIH
VIL
VIH
VIL
WE
VIH
tCE
VIL
OE
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q7
DATA OUT
DATA OUT
VIL
C8H
C2H
P/N:PM0901
REV. 1.0, NOV. 22, 2002
50
MX29LV017A
ERASE AND PROGRAMMING PERFORMANCE (1)
LIMITS
PARAMETER
MIN.
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
22.5
sec
Byte Programming Time
9
300
us
Chip Programming Time
18
54
sec
Erase/Program Cycles
Note:
100,000
Cycles
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 85°C, 2.7V, 100,000 cycles.
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
12.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
-100mA
+100mA
VCC Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
P/N:PM0901
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51
MX29LV017A
ORDERING INFORMATION
PART NO.
MX29LV017ATC-70
ACCESS TIME
OPERATING CURRENT
STANDBY CURRENT
(ns)
MAX.(mA)
MAX.(uA)
70
30
15
PACKAGE
40 Pin TSOP
(Normal Type)
MX29LV017ATC-90
90
30
15
40 Pin TSOP
(Normal Type)
MX29LV017AXBC-70
70
30
15
48 Ball CSP
(ball size=0.3mm)
MX29LV017AXBC-90
90
30
15
48 Ball CSP
(ball size=0.3mm)
MX29LV017AXEC-70
70
30
15
48 Ball CSP
(ball size=0.4mm)
MX29LV017AXEC-90
90
30
15
48 Ball CSP
(ball size=0.4mm)
MX29LV017ATI-70
70
30
15
40 Pin TSOP
(Normal Type)
MX29LV017ATI-90
90
30
15
40 Pin TSOP
(Normal Type)
MX29LV017AXBI-70
70
30
15
48 Ball CSP
(ball size=0.3mm)
MX29LV017AXBI-90
90
30
15
48 Ball CSP
(ball size=0.3mm)
MX29LV017AXEI-70
70
30
15
48 Ball CSP
(ball size=0.4mm)
MX29LV017AXEI-90
90
30
15
48 Ball CSP
(ball size=0.4mm)
P/N:PM0901
REV. 1.0, NOV. 22, 2002
52
MX29LV017A
PACKAGE INFORMATION
P/N:PM0901
REV. 1.0, NOV. 22, 2002
53
MX29LV017A
P/N:PM0901
REV. 1.0, NOV. 22, 2002
54
MX29LV017A
P/N:PM0901
REV. 1.0, NOV. 22, 2002
55
MX29LV017A
REVISION HISTORY
Revision No. Description
1.0
1. To changed "Advanced Information" to "Preliminary"
2. To modify Package Information
P/N:PM0901
Page
P1
P53~55
Date
NOV/22/2002
REV. 1.0, NOV. 22, 2002
56
MX29LV017A
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688
FAX:+886-3-563-2888
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TEL:+32-2-456-8020
FAX:+32-2-456-8021
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TEL:+81-44-246-9100
FAX:+81-44-246-9105
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FAX:+65-348-8096
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FAX:+886-2-2509-2200
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FAX:+1-408-453-8488
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TEL:+1-847-963-1900
FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.