MXP3000 Series GaAs PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz (active area of 250 mm2), 1.75 GHz(active area of 200 mm2), 5 GHz (active area of 100 mm2), 7 GHz (active area of 60 mm2), and 8.75 GHz (active area of 30 mm2), The MXP3000 series of photodiodes are originally offered in die form for manufacturers of photodiode modules, supervisory pump laser circuits, and combination PIN Photodiode-transimpedance amplifier hybrids. !"Low Dark Current !"Extremely low capacitance !"Wide bandwidth !"Fast response time APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS !"850nm Fiber Optic Applications W W W . Microsemi .COM Microsemi’s GaAs PIN Photodiode chips are ideal for wide bandwidth 850nm optical networking applications. KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Part Ratings and Characteristics MXP3002 MXP3003 MXP3004 Item Sym MXP3001 MXP3005 Unit Test Condition Active Area(Dia.) Photo Sensitive Area Detection Range Responsivity Dark Current Capacitance Rise/Fall Time Bandwidth Breakdown Voltage Chip Size Bonding Pad Size — 30 0.0007 60 0.0028 100 0.0078 200 0.0314 250 0.0491 — — R Idark C tr/tf 850 0.45 1 0.3 40 850 0.45 1 0.4 50 850 0.45 1 0.6 70 850 0.45 2 1.5 200 850 0.45 3 2 250 mm2 mm2 Nm A/W nA pF ps 8.75 20 350 x 350 40 x 100 7 20 350 x 350 40 x 100 5 20 350 x 350 100 1.75 20 500 x 500 100 1.4 20 500 x 500 100 VB GHz — VR=-5V, l = 850nm VR=-5V VR=-5V VR=-5V, @ 850nm VR=-5V, @ 850nm IR=10uA um x um um x um MXP3000 SERIES Copyright 2000 MSC1592.PDF 2000-10-16 Microsemi Opto Electronics Products Group 2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256 http://www.microsemi.com/opto Page 1