RoHS N-HFA16PB60 RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 16 A FEATURES Ultrafast and ultrasoft recovery Very low I RRM and Q rr Compliant to RoHS Designed and qualified for industrial level BENEFITS TO-247 AC modified Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA16PB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 16 A continuous current, the HFA16PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA16PB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 3 Anode 1 Cathode PRODUCT SUMMARY Package TO-247AC modified (2 pins) l F(AV) 16A VR 600 V V F at l F 1.75 V trr (typ.) 19 ns T J max. 150ºC Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current l FSM Maximum repetitive forward current l FRM Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com TEST CONDITIONS VR PD T J , T Stg Page 1 of 6 Tc = 100 ºC VALUES UNITS 600 V 16 150 A 60 Tc = 25 ºC 74 Tc = 100 ºC 29 - 55 to + 150 W ºC RoHS N-HFA16PB60 RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.60 1.75 IF = 32 A - 1.85 2.0 IF = 16 A, TJ = 125 ºC - 1.45 1.65 V R = V R rated - 1.0 T J = 125°C, V R = V R rated - 400 10 1000 50 pF - nH MAX. UNITS IR = 100 µA IF = 16 A Maximum forward voltage VFM Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 25 Series inductance LS Measured lead to lead 5 mm from package body - 12 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb TEST CONDITIONS MIN. TYP. - 22 30 IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C - 19 - trr1 TJ = 25 ºC - 42 60 trr2 TJ = 125 ºC - 74 120 - 4.0 6.0 - 6.5 10 IRRM1 µA IF= 16A dIF/dt = -200 A/µs VR = 200 V TJ = 25 ºC ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC - 80 180 Qrr2 TJ = 125 ºC - 220 600 dl(rec)M/dt1 TJ = 25 ºC - 188 - TJ = 125 ºC - 160 - dl(rec)M/dt2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. – MAX. 300 - - 1.7 - - 40 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount – Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf . cm (lbf . in) Weight 6.0 (5.0) Mounting torque Marking device www.nellsemi.com Case style TO-247AC (JEDEC) Page 2 of 6 40 HFA16PA60 g RoHS N-HFA16PB60 RoHS SEMICONDUCTOR Nell High Power Products Fig.2 Typical reverse current vs. reverse voltage 10000 100 Reverse current (µA), l R Instantaneous forward current (A), lF Fig.1 Maximum forward voltage drop vs. Instantaneous forward current 10 TJ = 150 °С TJ = 125 °С TJ = 25 °С 1 1.0 TJ = 150 °С 1000 TJ = 125 °C 100 10 1 TJ = 25 ºC 0.1 0.01 1.2 1.4 1.6 1.8 2.0 2.2 0 2.4 200 100 Forward voltage drop (V), VFM 300 400 Reverse voltage (V), VR Fig.3 Typical junction capacitance vs. reverse voltage Junction capacitance (pF), CT 100 TJ = 25 °С 10 10 100 1000 Reverse voltage (V), VR Fig.4 Maximum thermal Impedance ZthJC characteristics Thermal response, ZthJC 10 1 P DM 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak T = Pdm x ZthJC + Tc 0.01 Rectangular pulse duration (sec), t 1 www.nellsemi.com 500 Page 3 of 6 0.1 1 600 RoHS N-HFA16PB60 RoHS SEMICONDUCTOR Nell High Power Products Fig.5 Typical reverse recovery time vs. dIF/dt Fig.6 Typical recovery current vs. dIF/dt 100 25 IF = 32 A IF = 16 A IF = 5 A 20 60 15 Irr (A) t rr (ns) 80 10 40 20 VR = 200 V TJ = 125 °С TJ = 25 °С IF = 32 A IF = 16 A IF = 5 A 5 VR = 200 V TJ = 125 °С TJ = 25 °С 0 0 100 1000 100 1000 dI F/dt (A/µs) dI F/dt (A/µs) Fig.8 Typical dI(rec)M/dt vs. dIF/dt Fig.7 Typical Stored Charge vs. dIF/dtI 10000 800 dI (rec)M /dt (A/µs) Qrr(nC) 600 VR = 200 V TJ = 125 °С TJ = 25 °С IF = 32 A IF = 16 A IF = 5 A 400 200 0 100 IF = 32 A IF = 16 A IF = 5 A 1000 100 100 1000 1000 dIF/dt (A/µs) dI F/dt (A/µs) Fig.9 Reverse recovery parameter test circuit VR = 200 V 0.01Ω L = 70 µH D.U.T. dIF /dt adjust D G IRFP250 S www.nellsemi.com VR = 200 V TJ = 125 °С TJ = 25 °С Page 4 of 6 RoHS N-HFA16PB60 RoHS SEMICONDUCTOR Nell High Power Products Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code - N 1 16 PB 60 2 3 4 5 - Nell Semiconductors product 2 - FRED family 3 - Current rating (16 =16A) 4 - PB = TO-247AC modified 5 - Voltage rating: (60 = 600 V) 1 www.nellsemi.com HFA Page 5 of 6 RoHS N-HFA16PB60 RoHS SEMICONDUCTOR Nell High Power Products Outine Table N-HFA16PB60 www.nellsemi.com Page 6 of 6