Renesas NP109N04PUJ-E1B-AY Mos field effect transistor Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N04PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP109N04PUJ-E1B-AY
Note
NP109N04PUJ-E2B-AY
Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tape 1000 p/reel
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low input capacitance
Ciss = 6900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
ID(DC)
±110
A
ID(pulse)
±440
A
PT1
220
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
EAS
360
mJ
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
IAR
60
A
Repetitive Avalanche Energy
Note3
EAR
360
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.68
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19728EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
NP109N04PUJ
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
VDS = VGS, ID = 250 μA
2.0
3.0
4.0
V
| yfs |
VDS = 5 V, ID = 55 A
45
102
RDS(on)
VGS = 10 V, ID = 55 A
Input Capacitance
Ciss
Output Capacitance
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
1.7
2.3
mΩ
VDS = 25 V,
6900
10350
pF
Coss
VGS = 0 V,
930
1400
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
360
650
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 55 A,
40
90
ns
Rise Time
tr
VGS = 10 V,
20
50
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
85
170
ns
Fall Time
tf
15
40
ns
Total Gate Charge
QG
VDD = 32 V,
115
180
nC
Gate to Source Charge
QGS
VGS = 10 V,
26
nC
QGD
ID = 110 A
38
nC
VF(S-D)
IF = 110 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 110 A, VGS = 0 V,
57
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
105
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
1.5
V
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
RL
VDD
Data Sheet D19728EJ1V0DS
td(on)
ton
tf
toff
NP109N04PUJ
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
250
200
150
100
0
50
0
0
25
50
75
100
125
150
175
0
TC - Case Temperature - °C
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
PW
100
1i 0
μs
i
m
i
m
s
y
ar
nd
B
io
at
w
n
d
it e
m
Li
d
it e
im
nL
do
ke
ra
ip
iss
1
s
1i 0
co
Se
D
er
10
0
1i
DC
RDS(on) Limited
(VGS = 10 V)
TC = 25°C
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
0.1
=
ID(DC)
w
Po
ID - Drain Current - A
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 0.68°C/W
1
0.1
0.01
Single Pulse
0.001
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19728EJ1V0DS
3
NP109N04PUJ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
500
1000
100
ID - Drain Current - A
ID - Drain Current - A
400
300
200
100
TA = −55°C
25°C
85°C
150°C
175°C
10
1
0.1
0.01
VGS = 10 V
Pulsed
VDS = 10 V
Pulsed
0.001
0
0
0.2
0.4
0.6
0.8
1
1
3
2
1
VDS = VGS
ID = 250 μA
50
100
150
| yfs | - Forward Transfer Admittance - S
4
0
5
1000
TA = −55°C
25°C
85°C
100
10
150°C
175°C
VDS = 5 V
Pulsed
1
1
200
10
100
1000
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
VGS = 10 V
Pulsed
4
3
2
1
0
1
10
100
1000
5
ID = 55 A
Pulsed
4
3
2
1
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(th) - Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-50
3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0
-100
2
Data Sheet D19728EJ1V0DS
25
NP109N04PUJ
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
5
100000
4
3
2
VGS = 10 V
ID = 55 A
Pulsed
1
Ciss
10000
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
-50
0
50
100
150
200
0.1
1
Tch - Channel Temperature - °C
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1000
td(off)
td(on)
tr
tf
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
40
16
35
14
VDD = 32 V
20 V
8V
30
25
12
10
20
8
15
6
VGS
10
4
VDS
5
ID = 110 A
0
1
10
100
0
1000
20
40
60
80
100
120
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
2
0
140
1000
100
0V
VGS = 10 V
10
1
Pulsed
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
10
VGS - Gate to Source Voltage - V
0
-100
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
0
0.5
1
1.5
0.1
1
10
100
1000
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D19728EJ1V0DS
5
NP109N04PUJ
PACKAGE DRAWING (Unit: mm)
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
4
15.25 ±0.5
No plating
1.35 ±0.3
TO-263 (MP-25ZP)
0.025
to 0.25
.2
0 to 8
°
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19728EJ1V0DS
NP109N04PUJ
TAPE INFORMATION
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
Reel side
−-* 6;2-
−-
* 6;2-
MARKING INFORMATION
NEC
109N04
UJ
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP109N04PUJ should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Maximum temperature (Package's surface temperature): 260°C or below
Recommended
Condition Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19728EJ1V0DS
7
NP109N04PUJ
• The information in this document is current as of April, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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