ON NP1100SBT3G Thyristor surge protectors high voltage bidirectional Datasheet

NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR−1089−CORE, IEC 61000−4−5, ITU
K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950,
UL 1950.
ELECTRICAL PARAMETERS
http://onsemi.com
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 − 350 VOLTS
MT1
VDRM
V(BO)
VT
IDRM
I(BO)
IT
IH
Device
V
V
V
mA
mA
A
mA
NP0640SxT3G
58
77
4
5
800
2.2
150
NP0720SxT3G
65
88
4
5
800
2.2
150
NP0900SxT3G
75
98
4
5
800
2.2
150
NP1100SxT3G
90
130
4
5
800
2.2
150
NP1300SxT3G
120
160
4
5
800
2.2
150
NP1500SxT3G
140
180
4
5
800
2.2
150
NP1800SxT3G
170
220
4
5
800
2.2
150
NP2100SxT3G
180
240
4
5
800
2.2
150
NP2300SxT3G
190
260
4
5
800
2.2
150
NP2600SxT3G
220
300
4
5
800
2.2
150
NP3100SxT3G
275
350
4
5
800
2.2
150
NP3500SxT3G
320
400
4
5
800
2.2
150
G = indicates leadfree, RoHS compliant
MT2
SMB
JEDEC DO−214AA
CASE 403C
MARKING DIAGRAM
AYWW
xxxxG
G
xxxx
= Specific Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
SURGE DATA RATINGS
Waveform
*
x = series ratings
ORDERING INFORMATION
Specification
Voltage
ms
Current
ms
A
B
C
Unit
GR−1089−CORE
2x10
2x10
150
250
500
A(pk)
IEC 61000−4−5
1.2x50
8x20
150
250
400
TIA−968−A
10x160
10x160
90
150
200
GR−1089−CORE
10x360
10x360
75
125
175
TIA−968−A
10x560
10x560
50
100
150
ITU−T K.20/21
10x700
5x310
75
100
200
GR−1089−CORE
10x1000
10x1000
50
80
100
See detailed ordering and shipping information on page 4 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Recognized Components
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 0
1
Publication Order Number:
NP0640S/D
NP Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics (Note 1)
Symbol
Breakover Voltage (Both Polarities)
Min
Typ
Unit
V
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
77
88
98
130
160
180
220
240
260
300
350
400
Off−State Voltage (Both Polarities)
VDRM
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
Off State Current
Max
V(BO)
V
58
65
75
90
120
140
170
180
190
220
275
320
( VD1 = 50 V ) Both Polarities
( VD2 = VDRM ) Both Polarities
IDRM1
IDRM2
2.0
5.0
mA
mA
Holding Current (Both Polarities) (Note 4) VS = 500 V; IT = 2.2 A
IH
150
250
−
mA
On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%)
VT
−
−
4.0
V
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt
−
−
500
A/mSec
Critical Rate of Rise of Off−State Voltage
(Linear Waveform, VD = 0.8 VDRM, TJ = 25°C)
dv/dt
5.0
−
−
kV/mSec
Unit
CAPACITANCE
Typ
Characteristics
Symbol
(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
1.
2.
3.
4.
A
B
C
70
70
70
70
60
60
60
60
40
40
40
40
125
125
125
125
100
100
100
100
60
60
60
60
210
210
210
210
180
180
180
180
100
100
100
100
Co
Electrical parameters are based on pulsed test methods.
di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
Measured under pulsed conditions to reduce heating
Allow cooling before testing second polarity.
http://onsemi.com
2
pF
NP Series
SURGE RATINGS
Characteristics
Symbol
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
2 x 10 mSec
8 x 20 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
A
B
C
Unit
A(pk)
IPPS1
IPPS2
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
150
150
90
75
50
75
50
250
250
150
125
100
100
80
500
400
200
150
150
200
100
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
Ipp − PEAK PULSE CURRENT − %Ipp
+I
Peak
Value
100
IT
tr = rise time to peak value
tf = decay time to half value
I(BO)
IH
−Voltage
Half Value
50
+Voltage
VT
VDRM V(BO)
0
0 tr
tf
TIME (ms)
−I
Figure 2. Voltage Current Characteristics of TSPD
Figure 1. Exponential Decay Pulse Waveform
Symbol
Parameter
VDRM
Peak Off State Voltage
V(BO)
Breakover Voltage
I(BO)
Breakover Current
IH
Holding Current
VT
On State Voltage
IT
On State Current
http://onsemi.com
3
NP Series
ORDERING INFORMATION
Part Number
Case
Shipping †
SMB
(Pb−Free)
2500 / Tape and Reel
Marking
NP0640SAT3G
064A
NP0640SBT3G
064B
NP0640SCT3G
064C
NP0720SAT3G
072A
NP0720SBT3G
072B
NP0720SCT3G
072C
NP0900SAT3G
090A
NP0900SBT3G
090B
NP0900SCT3G
090C
NP1100SAT3G
110A
NP1100SBT3G
110B
NP1100SCT3G
110C
NP1300SAT3G
130A
NP1300SBT3G
130B
NP1300SCT3G
130C
NP1500SAT3G
150A
NP1500SBT3G
150B
NP1500SCT3G
150C
NP1800SAT3G
180A
NP1800SBT3G
180B
NP1800SCT3G
180C
NP2100SAT3G
210A
NP2100SBT3G
210B
NP2100SCT3G
210C
NP2300SAT3G
230A
NP2300SBT3G
230B
NP2300SCT3G
230C
NP2600SAT3G
260A
NP2600SBT3G
260B
NP2600SCT3G
260C
NP3100SAT3G
310A
NP3100SBT3G
310B
NP3100SCT3G
310C
NP3500SAT3G
350A
NP3500SBT3G
350B
NP3500SCT3G
350C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
NP Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
C
K
J
P
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NP0640S/D
Similar pages