ON NP1300SAMCT3G 50a, ultra low capacitance tspd Datasheet

NP-SAMC Series
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50A, Ultra Low Capacitance
TSPD
The NP−SAMC series of Low Capacitance Thyristor Surge
Protection Devices (TSPD) protect sensitive electronic equipment
from transient overvoltage conditions. Due to their ultra low off−state
capacitance (Co), they offer minimal signal distortion for high speed
equipment such as DSL and T1/E1 circuits. The low nominal offstate
capacitance translates into the extremely low differential capacitance
offering superb linearity with applied voltage or frequency.
The NP−SAMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
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ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
50A, 10x1000ms SURGE
Features
•
•
•
•
•
•
Ultra Low − Micro Capacitance
Low Leakage (Transparent)
High Surge Current Capabilities
Precise Turn on Voltages
Low Voltage Overshoot
These are Pb−Free Devices
T
R
Typical Applications
SMB
JEDEC DO−214AA
CASE 403C
• xDSL Central Office and Customer Premise
• T1/E1
• Other Broadband High Speed Data Transmission Equipment
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
VDRM
V(BO)
CO, 2 V,
1 MHz
CO, 50 V,
1 MHz
AYWW
xxxAMG
G
V
V
pF (Max)
pF (Max)
NP0640SAMCT3G
"58
"77
18
8
NP0720SAMCT3G
"65
"88
18
8
NP0900SAMCT3G
"75
"98
18
8
NP1100SAMCT3G
"90
"130
18
8
NP1300SAMCT3G
"120
"160
18
8
NP1500SAMCT3G
"140
"180
18
8
NP1800SAMCT3G
"170
"220
18
8
NP2100SAMCT3G
"180
"240
18
8
NP2300SAMCT3G
"190
"260
18
8
Device
Package
Shipping†
NP2600SAMCT3G
"220
"300
18
8
NPxxx0SAMCT3G
NP3100SAMCT3G
"275
"350
18
8
SMB
(Pb−Free)
2500 Tape &
Reel
NP3500SAMCT3G
"320
"400
18
8
Device
G in part number indicates RoHS compliance
Other protection voltages are available upon request
Symmetrical Protection − Values the same in both negative and positive
excursions
(See V−I Curve on page 3)
A
Y
WW
xxx
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SAMC)
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. P2
1
Publication Order Number:
NP0640SA/D
NP−SAMC Series
SURGE RATINGS
IPPS
A
ITSM
A
di/dt
Waveform (ms)
2x10
8x20
10x160
10x560
10x360
10x1000
5x310
0.1 s
60 Hz
A/ms
Value
150
150
90
50
75
50
75
20
500
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
VDRM
IPPS
ITSM
Rating
Value
Unit
Repetitive peak off−state voltage: Rated maximum
NP0640SAMCT3G
(peak) continuous voltage that may be applied in the
NP0720SAMCT3G
off−state conditions including all dc and repetitive
alternating voltage components.
NP0900SAMCT3G
$58
V
NP1100SAMCT3G
$90
NP1300SAMCT3G
$120
NP1500SAMCT3G
$140
NP1800SAMCT3G
$170
NP2100SAMCT3G
$180
NP2300SAMCT3G
$190
NP2600SAMCT3G
$220
NP3100SAMCT3G
$275
NP3500SAMCT3G
$320
Nonrepetitive peak pulse current: Rated maximum
value of peak impulse pulse current that may be
applied.
Nonrepetitive peak on−state current: Rated
maximum (peak) value of ac power frequency
on−state surge current which may be applied for a
specified time or number of ac cycles.
$65
$75
2x10 ms, GR−1089−CORE
150
8x20 ms, IEC−61000−4−5
150
10x160 ms, TIA−968−A
90
10x560 ms, TIA−968−A
50
10x360 ms, GR−1089−CORE
75
10x1000 ms, GR−1089−CORE
50
5x310 ms, ITU−K.20/K.21/K.45
75
0.1s, 50/60 Hz, full sine wave
20
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
NP−SAMC Series
ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)
Max
Unit
Breakover voltage: The maximum voltage across the device in or at the NP0640SAMCT3G
breakdown region.
NP0720SAMCT3G
VDC = 1000 V, dv/dt = 100 V/ms
Rating
$77
V
NP0900SAMCT3G
$98
NP1100SAMCT3G
$130
NP1300SAMCT3G
$160
NP1500SAMCT3G
$180
NP1800SAMCT3G
$220
NP2100SAMCT3G
$240
NP2300SAMCT3G
$260
NP2600SAMCT3G
$300
NP3100SAMCT3G
$350
NP3500SAMCT3G
$400
Symbol
V(BO)
I(BO)
IH
IDRM
VT
Min
Typ
$88
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: The minimum current required to maintain the device in the on−state.
Off−state Current: The dc value of current that results from the application of the off−state voltage
800
150
mA
VD = 50 V
2
VD = VDRM
5
On−state Voltage: The voltage across the device in the on−state condition.
IT = 2.2 A (pk), PW = 300 ms, DC = 2%
dv/dt
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that
will not cause switching from the off−state to the on−state.
Linear Ramp between 0.1 VDRM and 0.9 VDRM
di/dt
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
CO
Off−state Capacitance
f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc
mA
4
±5
mA
V
kV/ms
±500
A/ms
NP0640SAMCT3G
18
pF
NP0720SAMCT3G
18
NP0900SAMCT3G
18
NP1100SAMCT3G
18
NP1300SAMCT3G
18
NP1500SAMCT3G
18
NP1800SAMCT3G
18
NP2100SAMCT3G
18
NP2300SAMCT3G
18
NP2600SAMCT3G
18
NP3100SAMCT3G
18
NP3500SAMCT3G
18
THERMAL CHARACTERISTICS
Symbol
TSTG
TJ
R0JA
Value
Unit
Storage Temperature Range
Rating
−65 to +150
°C
Junction Temperature
−40 to +150
°C
90
°C/W
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
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3
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
+I
Symbol
Parameter
IPPS
VDRM
Repetitive Peak Off−state Voltage
ITSM
V(BO)
Breakover Voltage
IT
IDRM
Off−state Current
IH
I(BO)
Breakover Current
IH
Holding Current
VT
On−state Voltage
IT
On−state Current
ITSM
Nonrepetitive Peak On−state Current
IPPS
Nonrepetitive Peak Impulse Current
VD
Off−state Voltage
ID
Off−state Current
VT
Off−State Region
I(BO)
−Voltage
On−State Region
NP−SAMC Series
ID
IDRM
+Voltage
VD
V(BO)
VDRM
−I
Figure 1. Voltage Current Characteristics of TSPD
Ipp − PEAK PULSE CURRENT − %Ipp
PEAK ON−STATE CURRENT
100
10
1
0.1
1
10
100
CURRENT DURATION (s)
1000
tr = rise time to peak value
tf = decay time to half value
Peak
Value
100
Half Value
50
0
0 tr
tf
TIME (ms)
Figure 2. Nonrepetitive On−State Current vs. Time
(ITSM)
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS)
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
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4
NP−SAMC Series
and shorts the transient to ground, safely protecting the
circuit.
+
I(OP)
+
Protected
Equipment
−
V(OP) TSPD
−
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
•TSPD looks like an open
•Circuit operates normally
DEVICE SELECTION
Normal Circuit Operation
I
+ (Fault)
V(Fault) TSPD
−
+
I(Fault) Protected
Equipment
−
Operation during a Fault
When selecting a TSPD use the following key selection
parameters.
•Fault voltage greater than Vbo occurs
•TSPD shorts fault to ground
•After short duration events the O/V
switches back to an open condition
•Worst case (Fail/Safe)
•O/V permanent short
•Equipment protected
Off−State Voltage VDRM
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Figure 4. Normal and Fault Conditions
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the IDRM. The IDRM should be as low as
possible. The typical value is less than 5 mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V(BO) is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The VDRM is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V(BO) is typically a 20−30% higher than the VDRM. Based
on these characteristics it is critical to choose devices which
have a VDRM higher than the normal circuit operating
voltage, and a V(BO) which is less than the failure threshold
of the protected equipment circuit. A low on−state voltage
Vt allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
VDRM should be greater than the peak value of these two
components:
VDRM > 212 + 48 = 260 VDRM
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
Transient Surge
Equipment Failure Threshold
Volts
TSPD Protection Voltage
Upper Limit
Normal System
Operating Voltage
TSPD Transparent
TSPD Protection
TSPD Transparent
(open)
(short)
(open)
Time
Figure 5. Protection During a Transient Surge
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5
NP−SAMC Series
TYPICAL APPLICATIONS
Tip
NP3100SAMC
Voice
NP3100SAMC
Ring
DSL
Figure 6. ADSL
NP1800SAMC
NP0640SAMC
NP0640SAMC
NP1800SAMC
TX
POWER
RX
NP1800SAMC
NP0640SAMC
NP0640SAMC
NP1800SAMC
Figure 7. T1/E1
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6
NP−SAMC Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
C
K
J
P
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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