NEC NP83P04PDG-E1-AY Mos field effect transistor Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP83P04PDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP83P04PDG-E1-AY
Note
NP83P04PDG-E2-AY
Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = −10 V, ID = −41.5 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)
• High current rating: ID(DC) = m83 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m83
A
ID(pulse)
m249
A
PT1
150
W
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Single Avalanche Current
Note2
IAS
56
A
Single Avalanche Energy
Note2
EAS
315
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.0
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18690EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
NP83P04PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V
−10
μA
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m100
nA
VGS(th)
VDS = −10 V, ID = −1 mA
−1.0
−1.6
−2.5
V
| yfs |
VDS = −10 V, ID = −41.5 A
30
60
RDS(on)1
VGS = −10 V, ID = −41.5 A
4.1
5.3
mΩ
RDS(on)2
VGS = −4.5 V, ID = −41.5 A
5.1
8.0
mΩ
Input Capacitance
Ciss
VDS = −10 V,
9820
pF
Output Capacitance
Coss
VGS = 0 V,
1500
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
850
pF
Turn-on Delay Time
td(on)
VDD = −20 V, ID = −41.5 A,
35
ns
Rise Time
tr
VGS = −10 V,
21
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
245
ns
Fall Time
tf
120
ns
Total Gate Charge
QG
VDD = −32 V,
200
nC
Gate to Source Charge
QGS
VGS = −10 V,
25
nC
QGD
ID = −83 A
53
nC
VF(S-D)
IF = −83 A, VGS = 0 V
0.93
Reverse Recovery Time
trr
IF = −83 A, VGS = 0 V,
57
ns
Reverse Recovery Charge
Qrr
di/dt = −100 A/μs
92
nC
Gate to Source Threshold Voltage
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
S
1.5
V
Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
50 Ω
PG.
VGS = −20 → 0 V
VDD
RG
PG.
VGS(−)
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS(−)
−
IAS
BVDSS
VDS
ID
VGS(−)
0
VDS
Wave Form
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
2
IG = −2 mA
RL
50 Ω
VDD
Data Sheet D18690EJ3V0DS
VDS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
NP83P04PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
180
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
150
120
90
60
30
0
0
0
25
50
75
100 125 150 175 200
0
25
50
Tch - Channel Temperature - °C
75
100 125 150 175 200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
PW
00
μs
1i m
ID(DC)
DC
i
s
1i 0
RDS(on) Limited
(VGS = −10 V)
ms
i
-10
=1
i
-100
w
Po
D
er
ip
iss
io
at
-1
d
it e
im
nL
TC = 25°C
Single Pulse
-0.1
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse)
1000
100
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 1.0°C/Wi
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18690EJ3V0DS
3
NP83P04PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-1000
VGS = −10 V
-200
-150
VDS = −10 V
Pulsed
-100
ID - Drain Current - A
ID - Drain Current - A
-250
−4.5 V
-100
-50
-10
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-1
-0.1
-0.01
Pulsed
0
-0.001
-0.5
-1
-1.5
0
-2
-1
-2
-5
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-3
-2.5
-2
-1.5
-1
-0.5
VDS = −10 V
ID = −1 mA
0
-75
-25
25
75
125
175
225
100
125°C
150°C
175°C
10
Tch = −55°C
−25°C
25°C
75°C
1
VDS = −10 V
Pulsed
0.1
-0.1
-1
8
VGS = −4.5 V
4
−10 V
2
Pulsed
0
-1
-10
-100
-100
-1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
10
6
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
-4
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
30
20
ID = −83 A
−41.5 A
−17 A
10
Pulsed
0
0
-5
-10
-15
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
-3
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
0
Data Sheet D18690EJ3V0DS
-20
NP83P04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10
Ciss, Coss, Crss - Capacitance - pF
VGS = −4.5 V
8
6
−10 V
4
2
ID = −41.5 A
Pulsed
Ciss
10000
Coss
1000
100
-0.1
0
-75
-25
25
75
125
175
225
SWITCHING CHARACTERISTICS
-10
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
-40
td(off)
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
-1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
tf
100
td(on)
tr
10
VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.1
-12
VDD = −32 V
−20 V
−8 V
-30
-9
-20
-6
VGS
-10
-3
VDS
ID = −83 A
0
-1
-10
-100
0
ID - Drain Current - A
40
80
120
160
0
200
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
-100
-10
VGS = −10 V
0V
-1
-0.1
Pulsed
trr - Reverse Recovery Time - ns
-1000
IF - Diode Forward Current - A
Crss
VGS = 0 V
f = 1 MHz
100
10
-0.01
di/dt = −100 A/μs
VGS = 0 V
1
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D18690EJ3V0DS
-0.1
-1
-10
-100
IF - Diode Forward Current - A
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP83P04PDG
PACKAGE DRAWING (Unit: mm)
1.35 ±0.3
TO-263 (MP-25ZP)
10.0 ±0.3
No plating
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
9.15 ±0.3
0.5
15.25 ±0.5
8.0 TYP.
4
0.025
to 0.25
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18690EJ3V0DS
NP83P04PDG
• The information in this document is current as of May, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
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M8E 02. 11-1
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