Vishay NSB8DT Glass passivated general purpose plastic rectifier Datasheet

NSxT, NSFxT, NSBxT
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated General Purpose
Plastic Rectifier
Reverse Voltage 50 to 1000
Forward Current 8.0A
ITO-220AC (NSFxT)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AC (NSxT)
0.140 (3.56)
DIA.
0.130 (3.30)
0.185 (4.70)
0.415 (10.54) MAX.
0.131 (3.39)
DIA.
0.122 (3.08)
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
DIA.
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.350 (8.89)
0.330 (8.38)
0.113 (2.87)
0.103 (2.62)
PIN
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
1
2
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
PIN
1
2
0.603 (15.32)
0.573 (14.55)
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
PIN 1
PIN 2
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
PIN 1
0.037 (0.94)
0.027 (0.69)
0.205 (5.20)
0.195 (4.95)
0.022 (0.55)
0.014 (0.36)
CASE
PIN 2
0.105 (2.67)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.110 (2.80)
0.100 (2.54)
0.060 (1.52)
0.205 (5.20)
0.195 (4.95)
TO-263AB (NSBxT)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.411 (10.45)
0.380 (9.65)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
K
0.42
(10.66)
0.055 (1.40)
0.360 (9.14)
0.320 (8.13)
0.33
(8.38)
Dimensions in inches
and (millimeters)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.63
(17.02)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.08
(2.032)
0.095 (2.41)
0.24
(6.096)
0.12
(3.05)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.205 (5.20)
0.195 (4.95)
Features
Mechanical Data
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High forward current capability
• High surge current capability
• Low forward voltage drop
• Glass passivated chip junction
• High temperature soldering guaranteed:
260°C/10 seconds, 0.160” (4.06mm) lead
length
Case: JEDEC TO-220AC, ITO-220AC &
TO-263AB molded plastic body
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Torque: 10 in. -lbs. max.
Mounting Position: Any
Weight: 0.064 ounce, 1.81 grams
Document Number 88690
08-Jul-02
0.140 (3.56)
0.110 (2.79)
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NSxT, NSFxT, NSBxT
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbols
NS8
AT
NS8
BT
NS8
DT
NS8
GT
NS8
JT
NS8
KT
NS8
MT
Units
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
at TC=100°C
IF(AV)
8.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
125
A
TJ, TSTG
-55 to +150
°C
Parameter
Operating junction and storage temperature range
(1)
RMS Isolation voltage (NSF type only)
from terminals to heatsink
with t = 1.0 second, RH ≤ 30%
4500
3500(2)
1500(3)
VISOL
Electrical Characteristics
V
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbols
NS8
AT
NS8
BT
NS8
DT
NS8
GT
NS8
JT
NS8
KT
NS8
MT
Units
Maximum instantaneous forward voltage at 8.0A
VF
1.1
V
Maximum DC reverse current
at rated DC blocking voltage
IR
10
100
µA
CJ
55
pF
TC=25°C
TC=100°C
Typical junction capacitance at 4.0V, 1MHz
Thermal Characteristics
Parameter
Typical thermal resistance
(4)
Ratings at 25°C ambient temperature unless otherwise specified.
Symbols
NSxT
NSFxt
NSBxt
Units
RΘJC
3.0
5.0
3.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9mm (0.19”)
(4) Thermal resistance from junction to case mounted on heat sink
www.vishay.com
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Document Number 88690
08-Jul-02
NSxT, NSFxT, NSBxT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
10
175
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Peak Forward Surge Current (A)
Average Forward Current (A)
60 HZ Resistive or Inductive Load
8.0
6.0
4.0
2.0
0
125
1.0 Cycle
100
75
50
25
0
0
50
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
100
Pulse Width = 300µs
1% Duty Cycle
10
1
0.1
0.6
100
10
1
150
100
100
Instantaneous Forward Current (A)
150
10
TJ = 100°C
1
TJ = 75°C
TJ = 25°C
0.1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
Junction Capacitance (pF)
120
TJ = 25°C
f = 1.0MHZ
Vsig = 50MVp-p
100
80
60
40
20
0
0.1
10
1
100
1,000
Reverse Voltage (V)
Document Number 88690
08-Jul-02
www.vishay.com
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