NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com −12 VOLTS 4.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 65 mW COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 A Collector Current − Peak ICM −4.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C Collector Current − Continuous 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 VE M G G 1 VE = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS12200LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS12200L/D NSS12200LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max −12 − − −12 − − −7.0 − − − − −0.1 − − −0.1 250 250 200 150 − 300 − − − − − − − − − − −0.008 −0.065 −0.100 −0.130 −0.011 −0.090 −0.120 −0.180 − − −0.900 − − −0.900 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −12 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −7.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − − 350 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − − 120 pF Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) td − − 60 ns Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tr − − 120 ns Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) ts − − 250 ns Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tf − − 130 ns SWITCHING CHARACTERISTICS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. http://onsemi.com 2 NSS12200LT1G 0.35 VCE(sat) = 150°C IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 0.2 0.15 25°C 0.1 −55°C 0.05 0 0.001 0.01 0.1 1.0 0.25 −55°C 0.15 0.1 0.05 10 0 0.001 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 25°C (2.0 V) −55°C (5.0 V) −55°C (2.0 V) 0.9 1.0 10 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE = −2.0 V −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.1 1.0 IC/IB = 10 1.0 0.3 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 25°C (5.0 V) 1.0 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.1 150°C (2.0 V) 0.1 0.1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5.0 V) 0.01 0.01 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0.001 25°C 0.2 IC, COLLECTOR CURRENT (A) 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 VCE(sat) = 150°C IC/IB = 100 0.3 0.001 0.01 0.1 1.0 10 10 mA 0.8 VCE (V) IC = 500 mA 100 mA 300 mA 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1.0 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12200LT1G Cobo, OUTPUT CAPACITANCE (pF) 200 Cibo (pF) 350 325 300 275 250 225 200 175 150 125 0 1.0 2.0 3.0 4.0 5.0 6.0 Cobo (pF) 175 150 125 100 75 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1 ms 1.0 10 ms IC (A) Cibo, INPUT CAPACITANCE (pF) 375 100 ms 1s 0.1 Thermal Limit 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 4 100 9.0 10 NSS12200LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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