ON NTD4809NHT1G Power mosfet 30 v, 58 a, single n−channel, dpak/ipak Datasheet

NTD4809NH
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
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V(BR)DSS
RDS(on) MAX
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
ID MAX
9.0 mW @ 10 V
30 V
58 A
14 mW @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
11.5
A
Continuous Drain
Current (RqJA) (Note 1)
TA = 25°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.0
W
Continuous Drain
Current (RqJA) (Note 2)
TA = 25°C
ID
9.0
A
Power Dissipation
(RqJA) (Note 2)
9.0
TA = 85°C
4
1 2
7.0
PD
1.3
Continuous Drain
Current (RqJC)
(Note 1)
TC = 25°C
ID
58
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
52
W
TA = 25°C
IDM
130
A
Pulsed Drain Current
tp=10ms
Current Limited by Package
W
A
45
TA = 25°C
IDmaxPkg
45
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
IS
43
A
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 15 A, RG = 25 W)
EAS
112.5
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
Drain to Source dV/dt
1
3
TA = 25°C
TC = 85°C
4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DPAK
CASE 369C
(Bent Lead)
STYLE 2
2
3
3 IPAK
IPAK
CASE 369AD
CASE 369D
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
YWW
48
09NH
Steady
State
S
YWW
48
09NH
TA = 85°C
N−Channel
G
YWW
48
09NH
Parameter
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
= Year
WW
= Work Week
4809NH= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 1
1
Publication Order Number:
NTD4809NH/D
NTD4809NH
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
2.9
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient − Steady State (Note 1)
RqJA
74
Junction−to−Ambient − Steady State (Note 2)
RqJA
116
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.5
5.7
VGS = 10 to
11.5 V
ID = 30 A
7.0
ID = 15 A
7.0
VGS = 4.5 V
ID = 30 A
10.45
ID = 15 A
9.95
VDS = 15 V, ID = 15 A
mV/°C
9.0
mW
12.5
9.0
S
1596
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
190
Total Gate Charge
QG(TOT)
12.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
15
nC
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
2.4
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
29.3
nC
12.0
ns
QGD
QG(TOT)
331
5.3
5.1
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
20
14
tf
5.0
td(on)
7.0
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
18
22
3.0
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4809NH
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.2
V
TJ = 125°C
0.83
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
15.6
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
ns
10.6
5.0
QRR
7.5
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.75
PACKAGE PARASITIC VALUES
TA = 25°C
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3
1.88
W
NTD4809NH
TYPICAL PERFORMANCE CURVES
ID, DRAIN CURRENT (AMPS)
80
5.5 V to 10 V
90
4.5 V
VDS ≥ 10 V
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
100
80
70
60
4V
50
3.8 V
40
3.6 V
30
3.4 V
20
3.2 V
3V
10
0
50
40
30
TJ = 125°C
20
TJ = 25°C
10
TJ = −55°C
1
4
3
2
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.013
0.012
0.011
0.010
0.009
0.008
0.007
1.6
1.5
1.4
5
Figure 2. Transfer Characteristics
0.014
1.8
1.7
4
Figure 1. On−Region Characteristics
ID = 30 A
TJ = 25°C
3.5
3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.015
0.006
2
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4.5
5.5
6.5
7.5
8.5
9.5
10.5 11.5
0.020
TJ = 25°C
0.018
0.016
0.014
VGS = 4.5 V
0.012
0.010
0.008
VGS = 11.5 V
0.006
0.004
0.002
0
10
15
20
25
30
35
40
45
50
55
60
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
60
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
70
1.3
1.2
1.1
1.0
0.9
0.8
1000
TJ = 150°C
100
TJ = 125°C
10
1
0.7
0.6
−50 −25
TJ = 25°C
0.1
0
25
50
75
100
125
150
175
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
30
NTD4809NH
TYPICAL PERFORMANCE CURVES
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
2000
C, CAPACITANCE (pF)
TJ = 25°C
Ciss
1500
1000
500
Coss
Crss
0
0
5
10
15
20
25
30
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
QT
10
VGS
8
6
Qgs
4
VDD = 15 V
0 V ≤ VGS ≤ 11.5 V
ID = 30 A
TJ = 25°C
2
0
0
Figure 7. Capacitance Variation
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
30
30
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
5
Figure 8. Gate−to−Source Voltage
vs. Total Charge
100
tr
td(off)
10
td(on)
tf
VDD = 15 V
ID = 30 A
VGS = 11.5 V
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
25
100
15
10
5
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10 ms
100 ms
1 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
1
0.1
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage vs. Current
1000
100
TJ = 25°C
20
0
0.5
1
I D, DRAIN CURRENT (AMPS)
Qgd
120
ID = 15 A
100
80
60
40
20
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4809NH
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
25°C
100°C
125°C
10
1
1
10
100
PULSE WIDTH (ms)
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E−03
1.0E−02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E−01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping †
NTD4809NHT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4809NHT1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4809NH−35G
IPAK Trimmed Lead
(3.5 ± 0.15 mm)
(Pb−Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4809NH
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
E
R
4
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
M
T
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD−01
ISSUE O
A
E
E3
L2
E2
A1
D2
D
L1
L
T
SEATING
PLANE
A1
b1
2X
e
A2
3X
b
0.13
M
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
G
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
E2
T
D2
OPTIONAL
CONSTRUCTION
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7
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.70
−−−
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
NTD4809NH
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D 2 PL
G
0.13 (0.005)
M
T
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD4809NH/D